Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “FLASH”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Single Event Effects (SEE)↗
NASA NTRS2017

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

single-event upset (SEU)↗
NASA NTRS2017

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

3D NAND Flash memory; radiation susceptibility; si↗
NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗
NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗
NASA NTRS2018

MT29F512G08AUCBBH8-6IT:B NAND Flash Memory Total Ionizing Dose Test Report

The purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.

TID↗
NASA NTRS1997

Single-Event Upset in Flash Memories

This paper discusses single-event upset effets in flash memories, using heavy ions at the Texas A&M cyclotron. Initial results are presented for one manufacturer that compare uspet in the individual memory elemts with the more complex funtion failure modes that occur in the internal state machine and its control registers. This device is designed to function with either 5-V or 3.3-V power supply levels for read operations, but requires an additional 5 or 12-V power supply for write and erase operations.

Flash↗
NASA NTRS2021

Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3D NAND Flash Memory

Single-event upsets are observed in a 72-layer 3D NAND flash memory operated in single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by three-dimensional data analysis and the energy dependence of device sensitive cross-section. Heavy ion data is also presented for comparison.

Direct ionization↗
NASA NTRS2022

A Terrestrial Gamma-ray Flash from the 2022 Hunga Tonga–Hunga Ha’apai Volcanic Eruption

The Hunga Tonga–Hunga Ha’apai submarine volcano recently resumed activity. Violent eruptions on 2022 January 14th and 15th launched a tall ash plume that produced extremely high lightning rates. Here we report a terrestrial gamma-ray flash (TGF) that was produced by the volcanic lightning and observed from space by the Fermi Gamma-ray Burst Monitor (GBM). Observations by radio lightning networks and especially by the Geostationary Lightning Mapper (GLM) show that the only lightning close enough to produce a TGF detectable by Fermi GBM was from the volcano’s plume. With the observing duration of Fermi, observing a single TGF is consistent with the hypothesis that the volcanic lightning of this eruption produced TGFs at the average rate of thunderstorm lightning. The observation of a strong TGF from space also indicates that the electric field was oriented so as to accelerate electrons upward.

Terrestrial gamma-ray flashes↗
NASA NTRSDate not supplied

Composite Bond Line Measurements Based on A Bayesian Analysis of Flash Thermography Data

For bonded composite materials, an accurate characterization of the adhesive bond line is needed to predict failure modes and fracture toughness. In this paper, bond line thickness was estimated from data obtained using through transmission flash thermography. The forward model that predicts back surface temperature is based on a three layer heat diffusion equation with varying diffusivity and flux boundary conditions. The corresponding inverse problem of estimating bond line thickness from measurement data was solved using a Bayesian approach that assumed Gaussian priors for the bond line thickness and thermal diffusivity of the adherends. Finally, the outputs of the thermography based method were compared to measurements that were collected using a micrometer and ultrasound testing.

Flash thermography↗
NASA NTRSDate not supplied

Composite Bond Line Measurements Based on a Bayesian Analysis of Flash Thermography Data

For bonded composite materials, an accurate characterization of the adhesive bond line is needed to predict failure modes and fracture toughness. In this paper, bond line thickness was estimated from data obtained using through transmission flash thermography. The forward model that predicts back surface temperature is based on a three layer heat diffusion equation with varying diffusivity and flux boundary conditions. The corresponding inverse problem of estimating bond line thickness from measurement data was solved using a Bayesian approach that assumed Gaussian priors for the bond line thickness and thermal diffusivity of the adherends. Finally, the outputs of the thermography based method were compared to measurements that were collected using a micrometer and ultrasound testing.

Flash thermography↗