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At least 235 records · Page 13

Electromechanical magnetization switching

We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Tuning of the microwave magnetization dynamics in CoZr-based thin films by Nd-doping

To enhance the damping of microwave magnetization dynamics, we investigate the effect of Nd-doping (0–3.0 at. %) into CoZr thin films. The saturation magnetization decreases with Nd-doping. The coercivities generally decrease in the case of 1.5 at. % Nd-doping, while increase in the case of 3.0 at. % Nd-doping. The magnetization dynamics is characterized with the permeability spectra, which are determined by the ferromagnetic resonance behavior at the microwave range. The permeability spectra are analyzed through the fittings with Landau-Lifshitz-Gilbert equation. From the fittings, both the dynamic magnetic anisotropy field and the damping factor increase, due to the enhanced spin-orbital coupling by Nd-doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Influence of tantalum underlayer on magnetization dynamics in Ni{sub 81}Fe{sub 19} films

The effect of tantalum (Ta) underlayer is investigated in Ni{sub 81}Fe{sub 19} thin films for magnetization dynamics. The damping parameters extracted from spin wave measurements increase systematically with increasing Ta thickness, whereas the damping parameters from ferromagnetic resonance measurements are found to be weakly dependent on the Ta thickness. The difference is attributed to propagating properties of spin wave and short spin diffusion length in Ta. The group velocity of spin waves is found to be constant for different Ta thicknesses, and nonreciprocity of spin waves is not affected by the Ta thickness. The experimental observations are supported by micromagnetic simulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Unconventional spin distributions in thick Ni{sub 80}Fe{sub 20} nanodisks

We study the spin distributions in permalloy (Py: Ni{sub 80}Fe{sub 20}) nanodisks as a function of diameter D (300 nm ≤ D ≤ 1 μm) and thickness L (30 nm ≤ L ≤ 100 nm). We observed that beyond a certain thickness, for a fixed disk diameter, an unconventional spin topology precipitates which is marked by the presence of a divergence field within the magnetic vortex curl. The strength of this divergence changes anti-symmetrically from negative to positive—depending on the core polarity—along the axis of the cylindrical nanodisk. This is also accompanied by a skyrmion-like out-of-plane bending of the spin vectors farther away from the disk center. Additionally, the vortex core dilates significantly when compared to its typical size. This has been directly observed using magnetic force microscopy. We determined from the ferromagnetic resonance spectroscopy measurements that the unconventional topology in the thicker nanodisks gyrated at a frequency, which is significantly lower than what is predicted by a magnetic vortex based analytical model. Micromagnetic simulations involving dipolar and exchange interactions appear to satisfactorily reproduce the experimentally observed static and dynamic behaviors. Besides providing a physical example of an unconventional topology, these results can also aid the design of topologically protected memory elements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetic and high frequency properties of nanogranular CoFe-TiO{sub 2} films

A series of soft magnetic nanogranular CoFe-TiO{sub 2} films with different thicknesses were fabricated on Si substrates by co-sputtering CoFe and TiO{sub 2}, and the magnetic and high frequency properties were studied in details. X-ray diffraction analysis confirmed that the films were nanocrystalline/amorphous composites. A saturation magnetization as high as 21 kGs and a ferromagnetic resonance (FMR) frequency above 3 GHz were obtained. It was found that the coercivity decreased steeply with the increase of film thickness and its minimum value was about 6 Oe. In addition, the variations of FMR peak broadness of the imaginary part and damping factor were also presented and discussed as functions of film thickness.

36 MATERIALS SCIENCE↗

Microwave meta-atom enhanced spintronic rectification

An artificial meta-atom (MA), or alternatively, a plasmonic antenna, has been demonstrated to significantly enhance the microwave spin rectifying photovoltage by more than two orders in magnitude (∼280) in the ferromagnetic resonance regime. The large enhancement is attributed to the unique structure of the MA which magnifies both microwave electric (∼5) and magnetic (∼56) fields in the same near-field spatial region. Our work develops the interdisciplinary direction with artificial and natural magnetism and may find promising applications in high-frequency or opto-spintronic devices and wireless microwave energy harvesting.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Compositional dependence of the magnetic properties of epitaxial FeV/MgO thin films

Owing to their bcc structures and the low lattice misfit with MgO, FeV alloys are interesting for MgO-based magnetic tunnel junctions. We use vector network analyzer ferromagnetic resonance to measure the magnetization, anisotropy, exchange stiffness, and damping of epitaxial FeV/MgO thin alloys of various V contents. The low magnetization, very high exchange stiffness (23 pJ/m) and very low effective damping (<0.0026) of the alloy with 20% V content makes it an interesting candidate for spin torque applications. The ultralow damping is consistent with a spin-orbit origin, which sheds light on the possible strategies to reduce the damping in alloys.

36 MATERIALS SCIENCE↗

Characterization of spin pumping effect in Permalloy/Cu/Pt microfabricated lateral devices

We studied ferromagnetic resonance (FMR) for microfabricated lateral devices consisting of a Permalloy (Py) rectangular element and a Pt nano-element bridged by a Cu wire, which were located on a coplanar waveguide. A change in the resonance linewidth (Δf) was observed in the FMR spectra when the distance between Py and Pt (d) was varied. For devices with d < 400 nm, Δf definitely increased, suggesting the enhancement of the Gilbert damping constant (α). We discussed a possible reason for the this enhancement taking into account the increase in the efficiency of spin pumping into Cu due to the spin absorption of the attached Pt.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reduction of magnetic damping constant of FeCo films by rare-earth Gd doping

Magnetic damping constant (α) is one of the key parameters to determine the critical current density of spin-transfer-torque devices and the switching time of magnetization for ultra-high-frequency devices. In this work, Gd doped FeCo films were fabricated to investigate α based on the ferromagnetic resonance technique. Gd doping not only can efficiently decrease the magnetic inhomogeneity and the extrinsic part of α but also the Landé g-factor and intrinsic part of α. The obtained α was roughly proportional to (g-2){sup 2} and the magnetic anisotropic constant, indicating that the decreased spin-orbit interaction decreases α by Gd doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin current generation from sputtered Y₃Fe₅O₁₂ films

Spin current injection from sputtered yttrium iron garnet (YIG) films into an adjacent platinum layer has been investigated by means of the spin pumping and the spin Seebeck effects. Films with a thickness of 83 and 96 nanometers were fabricated by on-axis magnetron rf sputtering at room temperature and subsequent post-annealing. From the frequency dependence of the ferromagnetic resonance linewidth, the damping constant has been estimated to be (7.0 ± 1.0) × 10⁻⁴. Magnitudes of the spin current generated by the spin pumping and the spin Seebeck effect are of the same order as values for YIG films prepared by liquid phase epitaxy. The efficient spin current injection can be ascribed to a good YIG|Pt interface, which is confirmed by the large spin-mixing conductance (2.0 ± 0.2) × 10¹⁸m⁻².

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exchange bias properties of [Co/CoO]{sub n} multilayers

In this study, the exchange bias properties of four polycrystalline multilayer stack samples of antiferromagnetic (AF) CoO and ferromagnetic (FM) Co in the form of [CoO/Co]{sub n} with n = 1, 2, 3, and 5 are reported. The samples were grown on top of Si (001) substrates by using magnetron sputtering method. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were used to determine the structural properties of the samples. XPS measurements of cobalt oxide layer revealed the coexistence of different phases in cobalt oxide as CoO and Co{sub 3}O{sub 4}, the latter of which lowers the blocking temperature. The blocking temperature is also affected by the finite size scaling effects observed in AF layers. In-plane ferromagnetic resonance (FMR) measurements revealed uniaxial in-plane magnetic anisotropy for the samples. Low temperature vibrating sample magnetometer measurements provided exchange bias with a stepwise character. Observed steps are believed to be due to magnetization reversals of individual FM layers with varying thicknesses, each of which is pinned through two interfaces from above and below with two AFM layers, except the uppermost FM Co layer with a single AFM neighbor.

36 MATERIALS SCIENCE↗

Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Tuning of the spin pumping in yttrium iron garnet/Au bilayer system by fast thermal treatment

In this Letter, we investigated the influence of the fast thermal treatment on the spin pumping in ferromagnetic insulator yttrium iron garnet (YIG)/normal metal Au bilayer system. The YIG/Au bilayer thin films were treated by fast annealing process with different temperatures from 0 to 800 °C. The spin pumping was studied using ferromagnetic resonance. The surface evolution was investigated using a high resolution scanning microscopy and an atomic force microscopy. A strong thermal related spin pumping in YIG/Au bilayer system has been revealed. It was found that the spin pumping process can be enhanced by using fast thermal treatment due to the thermal modifications of the Au surface. The effective spin-mixing conductance of the fast thermal treated YIG/Au bilayer has been obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Determination of intrinsic spin Hall angle in Pt

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Preparing magnetic yttrium iron garnet nanodot arrays by ultrathin anodic alumina template on silicon substrate

Ultrahigh density periodically ordered magnetic yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) nanodot arrays have been prepared by pulsed laser deposition through an ultrathin alumina mask (UTAM). UTAM having periodically ordered circularly shaped holes with 350 nm in diameter, 450 nm in inter-pore distance, and 700 nm in height has been prepared on silicon substrate. Furthermore, the microstructure and magnetic properties of YIG nanodot arrays have been characterized. Nanodot arrays with a sharp distribution in diameter centered at 340 nm with standard deviation of 10 nm have been fabricated. Moreover, typical hysteresis loops and ferromagnetic resonance spectra in in-plane and out-of-plane revealed that this unique structure greatly influences the magnetics properties of YIG. First, coercivity of YIG nanodot arrays in in-plane was increased about from 15 Oe of YIG films to 500 Oe. Then, the degree of uniformity about nanodot height decided that two or more resonance peaks in out-of-plane were detected in the spectra. The peak-to-peak linewidth values were about 94 Oe and 40 Oe in the parallel and perpendicular directions, respectively, which indicated that the values were larger by the two-magnon scattering. Consequently, this pattering method creates opportunities for studying physics in oxide nanomagnets and may be applied in spin-wave devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic and absorbing properties of M-type substituted hexaferrites BaFe{sub 12–x}Ga{sub x}O{sub 19} (0.1 < x < 1.2)

X-ray powder diffraction is used to determine the unit cell parameters and to refine the crystal structure of the solid solutions of M-type hexagonal barium ferrite BaFe{sub 12–x}Ga{sub x}O{sub 19} (x = 0.1–1.2) with isostructural diamagnetic cation Ga{sup 3+} substitution at T = 300 K. As the level of substitution increases, the unit cell parameters are shown to decrease monotonically. The temperature (300 K ≤ T ≤ 750 K, H = 8.6 kOe) and field (T = 300 K,–20 kOe ≤ H ≤ 20 kOe) dependences of the saturation magnetization of these solid solutions are studied with a vibrating-sample magnetometer. The concentration dependences of the Curie temperature T{sub C}, the specific spontaneous magnetization, and the coercive force are plotted. The magnetic parameters are found to decrease with increasing substitution. The microwave properties of the solid solutions are analyzed in an external magnetic field (0 ≤ H ≤ 4 kOe). As the cation Ga{sup 3+} concentration increases from x = 0.1 to 0.6, the natural ferromagnetic resonance (NFMR) frequency decreases; as the concentration increases further to x = 1.2, this frequency again increases. As the cation Ga{sup 3+} concentration increases, the NFMR line width increases, which indicates a widening of the frequency range where electromagnetic radiation is intensely absorbed. Here, the resonance curve peak amplitude changes insignificantly. The shift of the NFMR frequency in an applied magnetic field is more pronounced for samples with low cation Ga{sup 3+} concentrations. The role of diamagnetic substitution is revealed, and the prospects and advantages of Ga-substituted beryllium hexaferrite as the material absorbing high-frequency electromagnetic radiation are demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗