Effects of irradiation with protons on the electrical properties of Bi sub 2 Te sub 3.
Proton irradiation effect on Hall coefficient, resistivity and magnetoresitance of p-type bismuth telluride single crystals
P-TYPE SEMICONDUCTOR↗
SEARCH · Engineering Papers
Results for “Electron mobility”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Some analytic properties of finite-band models in solids.
Analytic properties of finite-band models in solids as generalization of Kohn procedure
BLOCH BAND↗
Trapping processes in amorphous selenium.
Theory of small signal current transients applied to study of electron trapping in amorphous selenium
SELENIUM↗
Power series expansion of the electron velocity distribution function.
Power series expansion of electron velocity distribution function, computing harmonic electric current densities in plasma
SERIES EXPANSION↗
Study of certain features of the electronic structure of the ternary alloys Ni2(Mn, Fe) and Ni3(Mn, Co)
The changes in electronic structure related to transport processes occurring during the alloying of he alloy Ni3Mn with iron and cobalt, and the ordering of the ternary alloys thus formed are presented. The Hall effect, the absolute thermal emf, the internal saturation induction, the Nernst-Ettingshausen constant, and the electrical resistivity were measured. Results show a decrease in the contribution of hole sections of the Fermi surface to the transport process occurs together with a considerable increase in the contribution of electron sections. In this case, the mobility of 3 dimensional holes decreases and the mobility of 4s electrons increases considerably.
Zhukova, V. M.↗
Generalized reciprocity theorem for semiconductor devices
A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.
Misiakos, K.↗
New approach to the design of Schottky barrier diodes for THz mixers
Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.
Jelenski, A.↗
The electromagnetic environment at S- and Ku-band frequencies for the Space Station Freedom
The purpose of this paper is to quantify the electric field strength around the Space Station Assembly/Contingency Subsystem (ACS) S-band conical horn antenna and the Space-to-Ground Subsystem (SGS) Ku-band 6-ft diameter reflector antenna. The regions in which the electric fields exceed the specified maximum permitted RF exposure of the Extravehicular Mobility Unit electronics equipment and EVA astronaut are identified for the Space Station ACS S-band conical horn antenna and the SGS Ku-band 6-ft diameter reflector antenna, respectively. The scattering effects of a flat metal plate, a representative Space Station structural element, were also examined. It was shown that the reflected waves from the reflecting structure cause both destructive and constructive interference of the electric fields in the intersection region between the incident and reflected waves.
Hwu, Shian U.↗
Evaluation of an S- and an X-Band HTS Bandpass Filter
The Jet Propulsin Laboratory uses extremely sensitive receive systems to communicate with deep space probes and to perform radio science experiments.
noise temperature high temperature superconducting↗
A G-band 160 GHz T/R Module Concept for Planetary Landing Radar
In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars
power amplifier↗
Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate
In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
millimeter - wave↗
Miniature MMIC Low Mass/Power Radiometer Modules for the 180 GHz GeoSTAR Array
We have developed and demonstrated miniature 180 GHz Monolithic Microwave Integrated Circuit (MMIC) radiometer modules that have low noise temperature, low mass and low power consumption. These modules will enable the Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) of the Precipitation and All-weather Temperature and Humidity (PATH) Mission for atmospheric temperature and humidity profiling. The GeoSTAR instrument has an array of hundreds of receivers. Technology that was developed included Indium Phosphide (InP) MMIC Low Noise Amplifiers (LNAs) and second harmonic MMIC mixers and I-Q mixers, surface mount Multi-Chip Module (MCM) packages at 180 GHz, and interferometric array at 180 GHz. A complete MMIC chip set for the 180 GHz receiver modules (LNAs and I-Q Second harmonic mixer) was developed. The MMIC LNAs had more than 50% lower noise temperature (NT=300K) than previous state-of-art and MMIC I-Q mixers demonstrated low LO power (3 dBm). Two lots of MMIC wafers were processed with very high DC transconductance of up to 2800 mS/mm for the 35 nm gate length devices. Based on these MMICs a 180 GHz Multichip Module was developed that had a factor of 100 lower mass/volume (16x18x4.5 mm3, 3g) than previous generation 180 GHz receivers.
Monolithic Microwave Integrated Circuit (MMIC)↗
Dusty-Plasma Particle Accelerator
A dusty-plasma apparatus is being investigated as means of accelerating nanometer- and micrometer-sized particles. Applications for the dusty-plasma particle accelerators fall into two classes: Simulation of a variety of rapidly moving dust particles and micrometeoroids in outer-space environments that include micrometeoroid streams, comet tails, planetary rings, and nebulae and Deposition or implantation of nanoparticles on substrates for diverse industrial purposes that could include hardening, increasing thermal insulation, altering optical properties, and/or increasing permittivities of substrate materials. Relative to prior apparatuses used for similar applications, dusty-plasma particle accelerators offer such potential advantages as smaller size, lower cost, less complexity, and increased particle flux densities. A dusty-plasma particle accelerator exploits the fact that an isolated particle immersed in plasma acquires a net electric charge that depends on the relative mobilities of electrons and ions. Typically, a particle that is immersed in a low-temperature, partially ionized gas, wherein the average kinetic energy of electrons exceeds that of ions, causes the particle to become negatively charged. The particle can then be accelerated by applying an appropriate electric field. A dusty-plasma particle accelerator (see figure) includes a plasma source such as a radio-frequency induction discharge apparatus containing (1) a shallow cup with a biasable electrode to hold the particles to be accelerated and (2) a holder for the substrate on which the particles are to impinge. Depending on the specific design, a pair of electrostatic-acceleration grids between the substrate and discharge plasma can be used to both collimate and further accelerate particles exiting the particle holder. Once exposed to the discharge plasma, the particles in the cup quickly acquire a negative charge. Application of a negative voltage pulse to the biasable electrode results in the initiation of a low-current, high-voltage cathode spot. Plasma pressure associated with the cathode spot as well as the large voltage drop at the cathode spot accelerates the charged particles toward the substrate. The ultimate kinetic energy attained by particles exiting the particle holder depends in part on the magnitude of the cathode spot sheath potential difference, which is proportional to the magnitude of the voltage pulse, and the on the electric charge on the dust. The magnitude of the voltage pulse can be controlled directly, whereas the particle s electric charge can be controlled indirectly by controlling the operating parameters of the plasma apparatus.
Foster, John E.↗
Radiation Effects in Commercial GaN HEMT Devices
No abstract available
HEMT (High Electron Mobility Transistor)↗
The PROPEL Electrodynamic Tether Mission and Connecting to the Ionosphere
The exponential increase of launch system size.and cost.with delta-V makes missions that require large total impulse cost prohibitive. Led by NASA's Marshall Space Flight Center, a team from government, industry, and academia has developed a flight demonstration mission concept of an integrated electrodynamic (ED) tethered satellite system called PROPEL: "Propulsion using Electrodynamics". The PROPEL Mission is focused on demonstrating a versatile configuration of an ED tether to overcome the limitations of the rocket equation, enable new classes of missions currently unaffordable or infeasible, and significantly advance the Technology Readiness Level (TRL) to an operational level. We are also focused on establishing a far deeper understanding of critical processes and technologies to be able to scale and improve tether systems in the future. Here, we provide an overview of the proposed PROPEL mission. One of the critical processes for efficient ED tether operation is the ability to inject current to and collect current from the ionosphere. Because the PROPEL mission is planned to have both boost and deboost capability using a single tether, the tether current must be capable of flowing in both directions and at levels well over 1 A. Given the greater mobility of electrons over that of ions, this generally requires that both ends of the ED tether system can both collect and emit electrons. For example, hollow cathode plasma contactors (HCPCs) generally are viewed as state-of-the-art and high TRL devices; however, for ED tether applications important questions remain of how efficiently they can operate as both electron collectors and emitters. Other technologies will be highlighted that are being investigated as possible alternatives to the HCPC such as Solex that generates a plasma cloud from a solid material (Teflon) and electron emission (only) technologies such as cold-cathode electron field emission or photo-electron beam generation (PEBG) techniques.
Gilchrist, Brian↗
Technology Area Roadmap for In-Space Propulsion Technologies
The exponential increase of launch system size.and cost.with delta-V makes missions that require large total impulse cost prohibitive. Led by NASA fs Marshall Space Flight Center, a team from government, industry, and academia has developed a flight demonstration mission concept of an integrated electrodynamic (ED) tethered satellite system called PROPEL: \Propulsion using Electrodynamics.. The PROPEL Mission is focused on demonstrating a versatile configuration of an ED tether to overcome the limitations of the rocket equation, enable new classes of missions currently unaffordable or infeasible, and significantly advance the Technology Readiness Level (TRL) to an operational level. We are also focused on establishing a far deeper understanding of critical processes and technologies to be able to scale and improve tether systems in the future. Here, we provide an overview of the proposed PROPEL mission. One of the critical processes for efficient ED tether operation is the ability to inject current to and collect current from the ionosphere. Because the PROPEL mission is planned to have both boost and deboost capability using a single tether, the tether current must be capable of flowing in both directions and at levels well over 1 A. Given the greater mobility of electrons over that of ions, this generally requires that both ends of the ED tether system can both collect and emit electrons. For example, hollow cathode plasma contactors (HCPCs) generally are viewed as state-of-the-art and high TRL devices; however, for ED tether applications important questions remain of how efficiently they can operate as both electron collectors and emitters. Other technologies will be highlighted that are being investigated as possible alternatives to the HCPC such as Solex that generates a plasma cloud from a solid material (Teflon) and electron emission (only) technologies such as cold-cathode electron field emission or photo-electron beam generation (PEBG) techniques
Johnson, Les↗
InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing
The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.
High electron mobility transistor (HEMT)↗
Molten Target Sputtering: Non-Conventional Method for High Mobility Si0.15Ge0.85 Growth at 500°C
Since electrons travel over 100 times faster in Silicon-Germanium (SiGe) than in pure Si due to the low effective masses associated with Ge and SiGe-based devices continue to replace Si-based solid-state electronic devices. SiGe thin film on sapphire was successfully grown at 890°C, using a magnetron sputtering system within heteroepitaxial framework. However, SiGe growth at 890oC is a costly and difficult process to produce as a uniform wafer for semiconductor device manufacturing due to thermal soak times, and geometric thermal shadowing from the wafer holder. To leverage the semiconducting capabilities of SiGe, novel processing techniques for SiGe film growth with decreased thermal loading are required. This paper introduces the Molten Target Sputtering (MTS) method that produces high mobility SiGe on sapphire below 500°C. This non-conventional method has the advantage of high kinetic energy, high-energy latency, and high flux density of sputtered atoms by combining benefits of both magnetron sputtering and thermal evaporation. For the MTS method, a 1~2 mm (depth and width) ring-shaped groove was cut between the center magnet and surrounded by electromagnets creating a circular cavity between the copper plate and source target materials that melt the target material. The SiGe grown from the MTS shows continuous morphology and 99.7% single crystal Si0.15Ge0.85 films. The Hall electron mobilities of the Si0.15Ge0.85 are 456 sq. cmV(exp -1)s(exp -1) and 123.9 sq. cmV(exp -1)s(exp -1) at 5.59 x 10(exp 18) cubic cm and 3.5 x 10(exp 20) cubic cm carrier concentration at 22.38°C, respectively. This is approximately 5.5 times higher than that of Si and similar to the Ge value at equivalent carrier concentrations and temperatures.
High mobility SiGe↗