Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “ELECTRON IONIZATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

The effects of laser polarization and wavelength on injection dynamics of a laser wakefield accelerator

Here, we investigate the effects of laser polarization and wavelength on electron injection dynamics in a laser wakefield accelerator. During the ionization process, electrons gain residual momentum and kinetic energy via above threshold ionization, which has a strong dependence on laser polarization. A circularly polarized laser pulse results in a much higher residual momentum and kinetic energy gain for the ionized electrons compared with the linearly polarized case. This residual momentum results in particle injection because of the sensitivity of particle trapping to the initial conditions and enhanced the total injected beam charge in both experiments and particle-in-cell simulations. Due to the strong correlation of above threshold ionization with laser wavelength, in this work we extended the investigation to long wavelength (up to 20 μm) drive pulses using particle-in-cell simulations. Owing to the gain in kinetic energy, it may be expected that the charge trapped would consistently increase for circular polarization with increasing laser wavelength, but this was not observed. Instead, there are oscillations with wavelength in the relative trapped charge between linear and circular polarization cases, which arise because of ionization and heating effects on the plasma. Our studies highlight the complex interplay between several different physical effects, including injection regimes—above threshold ionization assisted injection, wave-breaking injection by carrier-envelope-phase effects and ionization injection—ionization gradient induced laser pulse evolution, and thermal modifications to the wake structure that need considering when extrapolating laser wakefield acceleration to different wavelength regimes.

Ma, Y. (ORCID:0000000239194856)↗
NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗
DOE OSTI2024

Above-threshold ionization at laser intensity greater than 10 20 W / cm 2

Here we present experimental observation of above-threshold ionization (ATI) electrons produced by ionization of the neon K shell in a laser field where intensity exceeds 10 20 W/cm 2 . An array of plastic scintillating calorimeter detectors was used to measure the high-energy electrons at four angles in the laser forward direction. Coarse energy resolution was obtained using aluminum filters of several thicknesses to block lower-energy electrons. A threshold intensity around 2×10 20 W/cm 2 is observed for production of energetic ATI electrons in the laser forward direction, with maximum electron energy exceeding 10 MeV. L-shell electrons with energies <1.4 MeV are scattered farther forward along the laser direction than expected. We present comparisons of the measured total electron energies to the predictions of Monte Carlo models employing the ADK-PPT ionization model and the Augst barrier suppression ionization model.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Electronic spectroscopy and ionization potentials for YbOH and YbOCH 3

The polyatomic molecules YbOH and YbOCH 3 have been recognized as being of potential value for spectroscopic experiments that explore charge-parity and time reversal symmetry violation effects. These measurements require very high precision, which, in turn, will necessitate that the molecules be manipulated at ultra-cold temperatures. Both YbOH and YbOCH 3 have electronic transitions that appear suitable for laser cooling ($\tilde{A}$ 2 Π 1/2 -$\tilde{X}$ 2 Σ + and $\tilde{A}$2E 1/2 -$\tilde{X}$ 2 A 1 , respectively) but the currently available spectroscopic data is not sufficient to determine the extent to which population leaks may compromise the optical cooling processes. A further complication is that the quantum states of interest for these measurements will need to be selectively populated. The $\tilde{A}$-$\tilde{X}$ band systems of both YbOH and YbOCH 3 show evidence of vibronic perturbations, such that there are unassigned vibronic features at energies that are just above the origin bands. Here, in the present study we have recorded spectra for the $\tilde{A}$ 2 Π 1/2 -$\tilde{X}$ 2 Σ + transition of jet-cooled YbOD to facilitate the vibronic assignments. In addition, spectra for the $\tilde{B}$ 2 Σ + - $\tilde{X}$ 2 Σ + transition of YbOH were recorded, establishing the origin band at 20473.8 cm -1 . Previously, the reaction of Yb with CH 3 OH has been used to generate gas-phase YbOCH 3 . As this reaction also yields YbOH, there have been complications in spectroscopic studies of YbOCH 3 due to overlap of the $\tilde{A} -\tilde{X}$ band systems. To identify specific regions of overlap, resonantly enhanced two-photon ionization spectra were recorded using mass-resolved detection of the YbOH + and YbOCH 3 + ions. These data confirmed the overlap of vibronic bands near 17640 and 17680 cm -1 . Two-photon ionization spectroscopy also provided accurate ionization energies of IE(YbOH)=45788(10) and IE(YbOCH 3 )=45283(10) cm -1 . The IE for YbOH is relevant to problems encountered in previous attempts to determine the bond dissociation energy of YbOH + .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1994

The ionization of the diffuse ionized gas

The diffuse ionized gas (DIG), responsible for producing the faint but pervasive H(sub alpha), requires 15% of the power of all Galactic O stars for its ionization. No other source of ionization seems practical. The spectrum is strong in low stages of ionization (N II, SII), weak in (O III), and very weak in (O I) lambda 6300, at least in one well-observed direction, all significantly different from denser H II regions. We give low-density, low-excitation photoionization models that explain the observed spectrum. The lambda 6300 observation eliminates the simplest models for the DIG (Mathis 1986), in which neutral H extends beyond the edge of the very dilute stellar radiation field. Our present models include two components. One, representing the edges of interstellar H I clouds, extends to the point where H becomes neutral. In the second, the fraction of H(sup o) is not allowed to exceed 0.05 to 0.1. Both have very low values of the ionization parameter, or ratio of the number densities of ionizing photons to electrons. The ionization parameter required by our models is shown to be compatible with observed values of photon and electron densities in the diffuse interstellar medium. Interstellar dust is not important in either model. Predictions of the model are that the Galaxy is leaking about 4% of the ionizing radiation of at least the local O stars into the intergalactic medium, that (O II) lambda 3727 approximately equals 1.1 H(sub alpha), and that He(sup +)/H (sup +)) approximately equals 0.6 He/H. A major difficul ty of this picture is having ionizing radiation propagate from the ionizing stars in the plane of the Galaxy to the DIG. We suggest, as do Miller & Cox (1993), that the ionizing radiation from O stars produces holes or tunnels in the distribution of neutral H as seen from their positions, while we see a sky covered with H I sheets or filaments because we are not near a source of ionizing radiation. With our models, several interfaces between ionized and neutral gas are allowed before the observational limit on lambda 6300 is exceeded. Another difficulty is the gas-phase N(S(sup +))/N(H(sup o)) ratio toward the high-latitude star HD 93521 (Spitzer & Fitzpatrick 1993). We require (S/H) to be somewhat lower than solar, either because of depletion onto grains or a Galactic abundance gradient, so that the S(sup +) can be produced in each of separate H(sup o) and H(sup +) regions.

Domgorgen, H.↗
NASA NTRS1985

The ionization of atomic oxygen by electron impact

Single and double ionization of atomic oxygen by electron impact has been studied experimentally. The energy dependence of the specific ionization cross sections sigma(O+) and sigma(O2+) has been measured in the energy range 40-300 eV using a high-density atomic oxygen source not contaminated by metastable O(D-1) or O(S-1) atoms. The ratios of the measured cross sections to absolute values are given in a table.

Zipf, E. C.↗
NASA NTRS1974

The energy distribution cross section in threshold electron-atom impact ionization

The flatness of the energy differential cross section in impact ionization is derived analytically in the Wannier theory. However it is shown that the Wannier zone is confined to a region of the order E/5 is less than or equal to epsilon is less than or equal to 4E/5, where E is the available energy and epsilon is the energy of the electrons. By contrasting the known results of photoionization and photodetachment, one can cogently argue that in the complementary region where electrons share their energy very unequally the cross section rises to a value independent of E, and that this region determines the form of the threshold law.

Temkin, A.↗
DOE OSTI2021

Diffusion regime of electron–electron collisions in weakly ionized plasmas

We consider weakly ionized plasma where an elastic scattering of electrons on neutrals changes the individual acts and the rate of electron-electron collisions significantly. In this case, the kinetics of electron thermalization is very different from that in fully ionized plasma. Here, the colliding electrons do not move freely. They, instead, diffuse because of fast scattering on neutrals. We demonstrate how a proper account of this diffusion enables one to estimate the characteristic time of electron thermalization. We also present a rigorous derivation of the kinetic equation for electrons by using Bogolyubov’s method based on Liouville equations for multi-particle distribution functions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Here, extreme ultraviolet (EUV)-induced radiation exposure chemistry in organotin-oxo systems, represented by the archetypal [(R-Sn) 12 O 14 (OH) 6 ](A) 2 cage, has been investigated with density functional theory. Upholding existing experimental evidence of Sn-C cleavage-dominant chemistry, computations have revealed that either electron attachment or ionization can single-handedly trigger tin-carbon bond cleavage, partially explaining the current EUV sensitivity advantage of metal oxide systems. We have revealed that tin atoms at different parts of the molecule react differently to ionization and electron attachment and have identified such selectivity as a result of local coordination chemistry instead of the macro geometry of the molecule. An ionization-deprotonation pathway has also been identified to explain the observed evolution of an anion conjugate acid upon exposure and anion mass dependence in resist sensitivity.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
NASA NTRS2010

Treatment of Electronic Energy Level Transition and Ionization Following the Particle-Based Chemistry Model

A new method of treating electronic energy level transitions as well as linking ionization to electronic energy levels is proposed following the particle-based chemistry model of Bird. Although the use of electronic energy levels and ionization reactions in DSMC are not new ideas, the current method of selecting what level to transition to, how to reproduce transition rates, and the linking of the electronic energy levels to ionization are, to the author s knowledge, novel concepts. The resulting equilibrium temperatures are shown to remain constant, and the electronic energy level distributions are shown to reproduce the Boltzmann distribution. The electronic energy level transition rates and ionization rates due to electron impacts are shown to reproduce theoretical and measured rates. The rates due to heavy particle impacts, while not as favorable as the electron impact rates, compare favorably to values from the literature. Thus, these new extensions to the particle-based chemistry model of Bird provide an accurate method for predicting electronic energy level transition and ionization rates in gases.

Liechty, Derek S.↗
NASA NTRS1982

Transport of energetic electrons in a fully ionized hydrogen plasma

A Monte Carlo method for calculating energetic electron transport in a plasma is presented. The energy loss and angular deflection due to Coulomb collisions as a function of travel distance and energy are derived for energetic electrons in a fully ionized plasma with a uniform magnetic field. Formulas which include the effect of nonuniform B fields on the angular deflection are derived. The Monte Carlo method is applied to the thick-target beam model in which the energetic electrons are injected vertically downward.

Bai, T.↗