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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Breakdown and Self-healing in Tantalum Capacitors

Reliability of tantalum capacitors depends on the efficiency of self-healing that restores parts after breakdown. In this work, different types of polymer and MnO2 cathode capacitors have been tested for scintillation breakdown using a constant current stress (CCS) technique modified to allow detection of amplitudes and duration of current spikes. Monitoring of leakage currents with time under bias is used to assess the effect of scintillations. The appearance and composition of damaged sites have been examined after deprocessing and cross-sectioning. Thermal processes during scintillations have been analyzed, a mechanism of breakdown based on growth of conductive filaments in the dielectric suggested, and self-healing processes in polymer and MnO2 cathode capacitors discussed.

tantalum capacitor↗
NASA NTRSDate not supplied

Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum Capacitors

Replacement of MnO2 with conductive polymers as cathode materials in chip tantalum capacitors allows for a substantial reduction of the equivalent series resistance (ESR), improvement of frequency characteristics, and elimination of the possibility of ignition during failures. One of the drawbacks of chip polymer tantalum capacitors (CPTCs) is a relatively poor long-term stability at high temperatures. In this work, variations of capacitance, dissipation factor, and ESR in different types of capacitors including automotive grade parts from three manufacturers have been monitored during storage at temperatures from 100 ºC to 175 ºC for up to 18,000 hours. Results show that ESR is the most and capacitance the least sensitive to degradation parameter. Times to parametric failures have been simulated using a Weibull-Arrhenius model that allowed for assessments of activation energies of the degradation and prediction of times to failure at the use temperature. Degradation of CPTCs was explained by thermo-oxidative processes in conductive polymers that result in exponential increasing of the resistivity with time of ageing. This process starts after a certain incubation period that depends on packaging materials and design and corresponds to the time that is necessary to form delamination between the encapsulating molding compound and lead frame. The effectiveness of the existing qualification procedures to assure stable operation of CPTCs is discussed.

Aging↗
NASA NTRSDate not supplied

Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum Capacitors

Replacement of MnO2 with conductive polymers as cathode materials in chip tantalum capacitors allows for a substantial reduction of the equivalent series resistance (ESR), improvement of frequency characteristics, and elimination of the possibility of ignition during failures. One of the drawbacks of chip polymer tantalum capacitors (CPTCs) is a relatively poor long-term stability at high temperatures. In this work, variations of capacitance, dissipation factor, and ESR in different types of capacitors including automotive grade parts from three manufacturers have been monitored during storage at temperatures from 100 ºC to 175 ºC for up to 18,000 hours. Results show that ESR is the most and capacitance the least sensitive to degradation parameter. Times to parametric failures have been simulated using a Weibull-Arrhenius model that allowed for assessments of activation energies of the degradation and prediction of times to failure at the use temperature. Degradation of CPTCs was explained by thermo-oxidative processes in conductive polymers that result in exponential increasing of the resistivity with time of ageing. This process starts after a certain incubation period that depends on packaging materials and design and corresponds to the time that is necessary to form delamination between the encapsulating molding compound and lead frame. The effectiveness of the existing qualification procedures to assure stable operation of CPTCs is discussed.

Aging↗
NASA NTRS2021

Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum Capacitors

Replacement of MnO2 with conductive polymers as cathode materials in chip tantalum capacitors allows for a substantial reduction of the equivalent series resistance (ESR), improvement of frequency characteristics, and elimination of the possibility of ignition during failures. One of the drawbacks of chip polymer tantalum capacitors (CPTCs) is a relatively poor long-term stability at high temperatures. In this work, variations of capacitance, dissipation factor, and ESR in different types of capacitors including automotive grade parts from three manufacturers have been monitored during storage at temperatures from 100 ºC to 175 ºC for up to 18,000 hours. Results show that ESR is the most and capacitance the least sensitive parameter to degradation. Times to parametric failures have been simulated using a Weibull-Arrhenius model that allowed for assessments of activation energies of the degradation and prediction of times to failure at the use temperature. Degradation of CPTCs was explained by thermo-oxidative processes in conductive polymers that result in exponential increase of the resistivity with time of aging. This process starts after a certain incubation period that depends on packaging materials and design and corresponds to the time that is necessary to form delamination between the encapsulating molding compound and lead frame. The effectiveness of the existing qualification procedures to assure stable operation of CPTCs is discussed.

high temperature storage (HTS)↗
NASA NTRS2022

Useful Life of Tantalum Capacitors

Currently, the major reliability characteristic of tantalum capacitors is the failure rate, which is a constant used to characterize random failures of electronic components. However, contemporary MnO2 and polymer tantalum capacitors have both infant mortality (IM) and wear-out (WO) failures. This requires assessments of the useful life of the parts that is limited by the time of inception of WO failures that can be determined using an adequate reliability model and results of highly accelerated life testing (HALT). In this presentation, a modified time dependent dielectric breakdown (TDDB) model is used to describe both IM and WO failures during HALT. Specifics of physical processes resulting in degradation and failures in polymer and MnO2 tantalum capacitors are discussed, and the increase of IM failures with the level of stress is explained. The model justifies exponential dependence of the acceleration factors on voltage and predicts higher values of the voltage acceleration constant for IM compared to WO failures.

tantalum capacitors↗
NASA NTRS2023

Guidelines for Screening, Lot Acceptance, and Derating for Polymer Tantalum Capacitors

These guidelines have been developed for NASA space projects that are planning to use new technology hermetic and chip polymer cathode tantalum capacitors. Polymer Tantalum Capacitors (PTC) selected from MIL-PRF-32700, automotive grade (AEC-Q200) parts, or COTS+ (hi-rel COTS) capacitors should be screened and qualified as suggested in Tables 1-3 and derated per section 9 below. Screening and lot acceptance tests that were carried out for a lot that is intended for flight as a part of the manufacturing process do not need to be repeated

tantalum capacitors↗
NASA NTRS2023

Evaluation of Elements used for Manufacturing of NanoLam Metallized Polymer Film Capacitors

Metallized polymer film capacitors (MPFC) manufactured by NanoLam technology have a better volumetric efficiency and performance that may exceed the reliability of conventional MPFCs typically used in power and high voltage systems that require high insulation resistance and low power losses. These capacitors can be also an effective replacement for electrolytic and stacked ceramic capacitors currently used in space applications looking to save significant volume and mass. This report evaluates the effects of environmental conditions including radiation and storage at room and high temperatures on the characteristics of NanoLam elements used in the production of MPFCs. Assessments of the reliability acceleration factors and predictions for the useful life are made based on highly accelerated life tests (HALT) using distributions of times to parametric failures at different stress conditions. It has been shown that even a relatively small amount of moisture absorbed at room environments in the dielectric layers may substantially change the probability of failure. In the presence of moisture, degradation processes that started after voltage application continue with time during storage.

Metallized polymer film capacitors (MPFC)↗
DOE OSTI2024

Antiferroelectric Ceramics for Energy–Efficient Capacitors by Theory–Guided Discovery

Antiferroelectric ceramics, via the electric-field-induced antiferroelectric (AFE)–ferroelectric (FE) phase transitions, show great promise for high-energy-density capacitors. Yet, currently, only 70–80% energy release is found during a charge–discharge cycle. Here, for PbZrO 3 -based oxides, geometric nonlinear theory of martensitic phase transitions is applied (first used to guide supercompatible shape-memory alloys) to predict the reversibility of the AFE–FE transition by using density-functional theory to assess AFE/FE interfacial lattice-mismatch strain that assures ultralow electric hysteresis and extended fatigue lifetime. A good correlation of mismatch strain with electric hysteresis, hence, with energy efficiency of AFE capacitors is observed. Here, guided by theory, high-throughput material search is conducted and AFE compositions with a near-perfect charge–discharge energy efficiency (98.2%), i.e., near-zero hysteresis are discovered. And the fatigue life of the capacitor reaches 79.5 million charge–discharge cycles, a factor of 80 enhancement over AFE ceramics with large electric hysteresis.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf 0.5 Zr 0.5 O 2 Thin Film Capacitors

Abstract As an emerging nonvolatile memory technology, HfO 2 ‐based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase of the polarization state of initially pristine HfO 2 ‐based ferroelectric capacitors, the magnitude of the measured polarization increases, a phenomenon known as “wake‐up”. In this study, the authors attempt to understand what causes the wake‐up effect in Hf 0.5 Zr 0.5 O 2 (HZO) capacitors using nondestructive methods that probe statistically significant sample volumes. Synchrotron X‐ray diffraction reveals a concerted shift in HZO Bragg peak position as a function of polarization switching cycle number in films prepared under conditions such that they exhibit extremely large (≈3000%) wake‐up. In contrast, a control sample with insignificant wake‐up shows no such peak shift. Capacitance – voltage measurements show evolution in the capacitance loop with switching cycle number for the wake‐up sample and no change for the control sample. Piezoresponse force microscopy measurements are utilized to visualize the domain switching with wake‐up. The combination of these observations clearly demonstrates that wake‐up is caused by a field‐driven phase transformation of the tetragonal phase to the metastable ferroelectric orthorhombic phase during polarization switching of HZO capacitors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High-performance aqueous zinc-ion hybrid capacitors based on 3D printed metal-organic framework cathodes

The zinc-ion hybrid capacitor is a promising energy storage device, but current overall capacity is limited by the capacitance of the carbon cathode. We have produced a hierarchically porous, nitrogen-doped carbon cathode with good cycling and mechanical stability by 3D printing and pyrolysis of the zinc-based metal–organic framework ZIF-8. When incorporated into a zinc-ion hybrid capacitor, we achieved an areal capacitance of 16.9 F cm -2 and energy density of 7.23 mW h cm -2 , outperforming zinc-ion hybrid capacitors based on conventional cathodes.

25 ENERGY STORAGE↗
DOE OSTI2025

Recent trends in all-organic polymer dielectrics for high-temperature electrostatic energy storage capacitors

Electrostatic energy storage (EES) capacitors are critical for renewable energy and high-power systems, driving the search for dielectric materials that combine superior electrical insulation, mechanical flexibility, low density, cost-effectiveness, and processability. Polymer-based dielectrics have emerged as leading candidates, particularly for high electric field applications. However, conventional polymers often fail to meet the demands of high-temperature environments due to increased electrical conductivity and reduced discharged energy density at elevated temperatures, resulting in energy loss and reduced performance. High glass transition temperature (T g) polymers show promise but require further optimization to enhance their energy storage capabilities under thermal and electrical stress. This review provides a comprehensive update on recent advancements in high-T g polymer-based dielectrics for EES capacitors, focusing on both intrinsic polymers and all-organic composites. It outlines key design principles, critical performance parameters, and innovative strategies—such as nanofiller doping, layered architectures, physical blending, and chemical crosslinking—to improve electrical, thermal, and mechanical properties. The review also highlights emerging trends, including the integration of machine learning algorithms to explore novel polymer structures and expand the chemical design space. By bridging the gap between academic research and industrial application, this review aims to accelerate the development of next-generation dielectric materials capable of balancing multiple performance metrics for high-temperature EES capacitors.

Xie, Zongliang↗
DOE OSTI2015

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al 2 O 3 dielectric

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al 2 O 3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al 2 O 3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H 2 O instead of O 3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H 2 O-grown Al 2 O 3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al 2 O 3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O 3 -grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2016

A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not the voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Si:SrTiO 3 -Al 2 O 3 -Si:SrTiO 3 multi-dielectric architecture for metal-insulator-metal capacitor applications

We present that metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO 3 -Al 2 O 3 -Si:SrTiO 3 multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200–400 K) and electric field stress (61.5 MV/cm). A high capacitance density of 31 fF/μm 2 , a low voltage coefficient of capacitance of 363 ppm/V 2 , a low temperature coefficient of capacitance of <644 ppm/K, and an effective dielectric constant of 133 are demonstrated in a MIM capacitor with 1.4 nm capacitance equivalent thickness in a 40 nm thick ultra high-k multi-dielectric stack. Finally, all of these properties make this dielectric architecture of interest for next generation, highly scaled MIM capacitor applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Record magnetic field generation by short-pulse laser-driven capacitor-coil targets

Magnetic fields generated by capacitor-coil targets driven by intense short-pulse lasers have been characterized using ultrafast proton radiography. A 1-kJ, 15-ps laser at a center wavelength of 1053 nm irradiated the back plate of the capacitor with an intensity of ∼8.3 × 10 18 W/cm 2 , creating ultra large currents in the connecting coils. High-quality proton data obtained in the axial probing geometry show definitive signatures of magnetic field generation, allowing precision measurement of the field distribution and strength. The data show a coil current of 120 ± 10 kA producing 200 ± 20 Tesla magnetic fields at the coil center at 1.127 ns after the laser drive. In conclusion, this sets a record for magnetic field generation by the short-pulse-powered capacitor-coil targets.

Gao, Lan [Princeton Plasma Physics Laboratory (PPP↗
DOE OSTI2026

Time-resolved interferometric measurements of plasma density evolution in laser-driven capacitor-coil targets

Laser-driven capacitor-coil targets provide a compact platform for generating strong magnetic fields and are widely used in magnetized high-energy-density (HED) plasma experiments. In addition to magnetic-field generation, these targets also produce plasma in the coil region, which can influence the subject physical processes and interact with secondary targets or external plasmas in their applications. However, direct, time-resolved measurements of the plasma density surrounding the coil remain limited. Here, we report interferometric measurements of the plasma density evolution in laser-driven capacitor-coil targets irradiated by the University of Osaka LFEX laser. Two-dimensional electron density maps reveal two distinct plasma sources loading the coil region: plasma generated in the coil itself and plasma produced by laser ablation of the target plates. These results provide quantitative information on plasma loading and evolution in capacitor-coil targets and are directly relevant to the design and modeling of magnetized HED plasma experiments.

Zhang, Yang [Princeton University, NJ (United Stat↗
DOE OSTI2012

PV inverter performance and reliability: What is the role of the bus capacitor?

In order to elucidate how the degradation of individual components affects the state of the photovoltaic inverter as a whole, we have carried out SPICE simulations to investigate the voltage and current ripple on the DC bus. The bus capacitor is generally considered to be among the least reliable components of the system, so we have simulated how the degradation of bus capacitors affects the AC ripple at the terminals of the PV module. Degradation-induced ripple leads to an increased degradation rate in a positive feedback cycle. Additionally, laboratory experiments are being carried out to ascertain the reliability of metallized thin film capacitors. By understanding the degradation mechanisms and their effects on the inverter as a system, steps can be made to more effectively replace marginal components with more reliable ones, increasing the lifetime and efficiency of the inverter and decreasing its cost per watt towards the US Department of Energy goals.

14 SOLAR ENERGY↗
DOE OSTI2017

Fundamental-Frequency Reactive Circulating Current Injection for Capacitor Voltage Balancing in Hybrid-MMC HVDC Systems During Riding Through PTG Faults

Here, this article presents a comprehensive analysis and a novel solution for the discharge problem on the half-bridge submodules' (HBSMs') capacitors in the hybrid modular multilevel converter (MMC)-based high-voltage direct current transmission systems under a long-term (e.g., several minutes or longer) pole-to-ground fault condition. The mechanism of this issue is analyzed, and then a solution based on fundamental-frequency reactive circulating current (FFRCC) injection is proposed. The influence of FFRCC injection is analyzed in terms of the fluctuated arm capacitor energy and the current stress of semiconductors. Moreover, an enhanced arm voltage modulation method based on HBSMs and full-bridge submodules coordinate control is proposed to accelerate the capacitor voltage balance of HBSMs. Finally, the performance of the proposed control strategy is verified by the simulation results.

24 POWER TRANSMISSION AND DISTRIBUTION↗