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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Kilauea Magnetotelluric Dataset

In 2002 and 2003 a collaborative effort was undertaken between Lawrence Berkeley National Laboratory, Sandia National Laboratories, the USGS Menlo Park, the USGS Hawaiian Volcano Observatory, and Electromagnetic Instruments Inc. to study the Kilauea volcano in Hawaii using the magnetotelluric (MT) technique. The work was motivated by a desire to improve understanding of the magma reservoirs and conduits within Kilauea and the East and Southwest Rift zones, which has implications for understanding Kilaueas plumbing system. An improved understanding of the rift zones has implications in understanding large-scale landslides that are generated in the Hilina Slump, which produce significant impacts on coastal communities. Up to eight stations operated simultaneously, with multiple remote reference sites, and data were processed using multi-station robust processing techniques. In total, data were acquired at 70 sites over the Southwest and East rift zones. Good to excellent quality data were obtained even in the harshest conditions, such as those encountered on the fresh lava flows of the East Rift Zone (ERZ), where electrical contact resistances are on the order of 100 kOhm. This data supports the continuing efforts to increase geothermal power on the island of Hawaii. Each of the 70 EDI files are the MT impedance tensors for 1 site. There is also a description of the processing of the data and a site map showing the locations of each site.

15 GEOTHERMAL ENERGY↗
DOE OSTI2021

Specifics of Thermal Transport in Graphene Composites: Effect of Lateral Dimensions of Graphene Fillers

In this work, we report on the investigation of thermal transport in noncured silicone composites with graphene fillers of different lateral dimensions. Graphene fillers are comprised of few-layer graphene flakes with lateral sizes in the range from 400 to 1200 nm and the number of atomic planes from 1 to ~100. The distribution of the lateral dimensions and thicknesses of graphene fillers has been determined via atomic force microscopy statistics. It was found that in the examined range of the lateral dimensions, the thermal conductivity of the composites increases with increasing size of the graphene fillers. The observed difference in thermal properties can be related to the average gray phonon mean free path in graphene, which has been estimated to be around ~800 nm at room temperature. The thermal contact resistance of composites with graphene fillers of 1200 nm lateral dimensions was also smaller than that of composites with graphene fillers of 400 nm lateral dimensions. The effects of the filler loading fraction and the filler size on the thermal conductivity of the composites were rationalized within the Kanari model. The obtained results are important for the optimization of graphene fillers for applications in thermal interface materials for heat removal from high-power-density electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability

Atomically precise graphene nanoribbons (GNRs) synthesized from the bottom-up exhibit promising electronic properties for high-performance field-effect transistors (FETs). The feasibility of fabricating FETs with GNRs (GNRFETs) has been demonstrated, with ongoing efforts aimed at further improving their performance. However, their long-term stability and reliability remain unexplored, which is as important as their performance for practical applications. In this work, we fabricated short-channel FETs with nine-atom-wide armchair GNRs (9-AGNRFETs). We revealed that the on-state (/ ON ) current performance of the 9-AGNRFETs deteriorates significantly over consecutive full transistor on and off logic cycles, which has neither been demonstrated nor previously considered. To address this issue, we deposited a thin ~10 nm thick atomic layer deposition (ALD) layer of aluminum oxide (Al 2 O 3 ) directly on these devices. The integrity, compatibility, electrical performance, stability, and reliability, of the GNRFETs before and/or after Al 2 O 3 deposition were comprehensively studied. The results indicate that the observed decline in electrical device performance is most likely due to the degradation of contact resistance over multiple measurement cycles. We successfully demonstrated that the devices with the Al 2 O 3 layer operate well up to several thousand continuous full cycles without any degradation. Our study offers valuable insights into the stability and reliability of GNR transistors, which could facilitate their large-scale integration into practical applications.

36 MATERIALS SCIENCE↗
NASA NTRS1983

RF Sputtering of Gold Contacts On Niobium

Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

Barr, D. W.↗
DOE OSTI2023

Toward High Conversion Efficiency of Thermoelectric Modules through Synergistical Optimization of Layered Materials

Abstract Waste‐heat electricity generation using high‐efficiency solid‐state conversion technology can significantly decrease dependence on fossil fuels. Here, a synergistical optimization of layered half‐Heusler (hH) materials and module to improve thermoelectric conversion efficiency is reported. This is realized by manufacturing multiple thermoelectric materials with major compositional variations and temperature‐gradient‐coupled carrier distribution by one‐step spark plasma sintering. This strategy provides a solution to overcome the intrinsic concomitants of the conventional segmented architecture that only considers the matching of the figure of merit ( zT ) with the temperature gradient. The current design is dedicated to temperature‐gradient‐coupled resistivity and compatibility matching, optimum zT matching, and reducing contact resistance sources. By enhancing the quality factor of the materials by Sb‐vapor‐pressure‐induced annealing, a superior zT of 1.47 at 973 K is achieved for (Nb, Hf)FeSb hH alloys. Along with the low‐temperature high‐ zT hH alloys of (Nb, Ta, Ti, V)FeSb, the single stage layered hH modules are developed with efficiencies of ≈15.2% and ≈13.5% for the single‐leg and unicouple thermoelectric modules, respectively, under Δ T of 670 K. Therefore, this work has a transformative impact on the design and development of next‐generation thermoelectric generators for any thermoelectric material families.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1983

Development of metallization process: FSA project, cell and module formation research area

This experiment is involved in determining bulk resistivity values for different past concentrations. Experiments were performed on silicon Cz and non-Cz wafers. To determine bulk resistivity more accurately, pastes were printed on ceramic substrates. Contact resistance was determined by measuring the voltage drop at constant current. Because of irregularity of grid profiles, accurate determination of cross sections of grid lines is difficult. The bulk resistivity is accurate when the resistivity of the metallization is much less than that of the layer beneath it. When the resistivity of the metal approaches that of the substrate, the actual resistivity will be larger than the measured value.

Garcia, A., III↗
NASA NTRS1995

Better Ohmic Contacts For InP Semiconductor Devices

Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

Weizer, Victor G.↗
DOE OSTI2023

Controlled Dielectric Breakdown to Form Pinhole Passivating Contacts

This contribution explores an alternate route to forming pinhole-based poly-Si/dielectric/c-Si passivating contacts. The method utilizes controlled dielectric breakdown or electroforming to produce nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the pinholes and into the c-Si wafer, forming conductive pathways. We show that the pinholes lose passivation after electroforming but can be repassivated with a forming gas anneal. N-type contacts show contact resistivities of ~20 mOhm-cm2, but p-type contacts are ~100 mOhm-cm2. Devices show a distinct kink in the J-V curve indicative of a barrier to transport. The method can be expanded to optimized dielectric passivation stacks (not just thin, single layers) and can be formed in parallel over the faces of the wafer in selected areas (pinholes only under the grid lines).

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2021

Light-Induced Al Plating on Si for Fabrication of an Ag-Free All-Al Solar Cell

Light-induced electroplating of Al as the front electrode on the n-type emitter of Si solar cells is proposed as a substitute for screen-printed Ag. The advantages and disadvantages of Al over Cu as the front electrode are discussed. The power of a green laser used for patterning of the SiN x antireflection coating is optimized. Conditions for removal of laser damage and contamination on the laser-patterned surface are identified. The effect of plating temperature and post-annealing temperature on Al morphology and resistivity are investigated. Several plating additives are explored to improve the morphology and resistivity of the Al film. Nicotinic acid produces the lowest resistivity of 3.1 μ Ω-cm. However, the lowest contact resistivity between light-induced Al and Si is 69 mΩ-cm 2 due to laser-induced damage to the emitter. The Al film spikes through the thin n-type emitter when annealed at 500 °C causing cell failure. The process reproducibility is also poor due to atmospheric moisture.

14 SOLAR ENERGY↗
NASA NTRS1987

Four-terminal electrical testing device

The invention relates to a four-terminal electrical connector device for testing and measuring unknown resistances of initiators used for starting pyrotechnic events aboard the space shuttle. The testing device minimizes contact resistance degradation effects and so improves the reliability of resistance measurements taken with the device. Separate and independent voltage sensing and current supply circuits each include a pair of socket contacts for mating engagement with the pins of the initiator. The unknown resistance that is measured by the device is the resistance of the bridgewire of the initiator which is required to be between 0.95 and 1.15 ohms.

Robinson, Robert L.↗
NASA NTRS2004

Analysis of Electrical Characteristics of Thin Film Photovoltaic Cells

Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between them, to determine the cause of the poor yields. As a student of electrical engineering with some material science background, my role in this research is to develop techniques for analyzing the electrical characteristics of the CuInS2 cells. My first task was to design a shadow mask to be used to place molybdenum contacts under a layer of CuInS;! in order to analyze the contact resistance between the materials. In addition, I have also analyzed evaporated aluminum top contacts and have tested various methods of increasing their thicknesses in order to decrease series resistance. More recently I have worked with other members of the research group in reviving a vertical cold-wall reactor for experimentation with CuInS2 quantum dots. As part of that project, I have improved the design for a variable frequency and pulse width square wave generator to be used in driving the precursor injection process. My task throughout the remainder of my tenure is to continue to analyze and develop tools for the analysis of electrical properties of the CuInS2 cells with the ultimate goal of discovering ways to improve the efficiency of our photovoltaic cells. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While The research group lead by Dr. Hepp has spent several years researching copper indium

Kasick, Michael P.↗
DOE OSTI2021

Characterization and High Temperature Electrical Properties of Brazed Joints of La0.8Sr0.2CrO3 with Nickel and Nickel Alloys

This study investigates the high-temperature electrical properties and microstructural characteristics of brazed joints combining La₀.₈Sr₀.₂CrO₃ (LSC) with nickel and nickel-based alloys. Using nickel-based filler metals (NB LM and NB 130), the joints were tested in controlled atmospheres (95% N₂ and 5% H₂). Electrical resistivity was analyzed across a range of temperatures (25–727°C), and contact resistance was evaluated using a composite model. Results indicate that joint resistance decreases with increasing temperature, with optimal brazing achieved at 1160°C. Diffusion processes involving Si, Ni, O, and Sr were identified, with silicon oxide formation contributing to joint bonding.

20 FOSSIL-FUELED POWER PLANTS↗
NASA NTRS2011

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Evans, Laura J.↗
NASA NTRS1989

Four-terminal connector for measuring resistance of a pyrotechnic initiator

A four-terminal electrical connector device (40) for testing and measuring unknown resistances of initiators (11) used for starting pyrotechnic events aboard a Space Transportation System. The testing device minimizes contact resistance degradation effects and so improves the reliability of resistance measurement taken with the device. Separate and independent voltage sensing (19) and current supply (20) circuits each includes a pair of socket contacts (13-16) for mating engagement with the pins (17,18) of the initiator. The unknown resistance that is measured by the device is the resistance of the bridgewire (23) of the initiator which is required to be between 0.95 and 1.15 ohms.

Robinson, Robert L.↗
NASA NTRS1990

Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

Ban, Vladimir S.↗
DOE OSTI2022

Convective Heat Transfer Potential of Particles/Airflow Through Single Cell Thick Additively Manufactured Octet-Shaped Lattice Frame Material

Abstract Particle-to-Supercritical Carbon Dioxide (sCO2) heat exchangers are one of the most critical components of the next-generation Concentrating Solar Power (CSP) plants. There have been several efforts to enhance the overall heat exchanger performance which essentially comprises of thermal resistances offered by sCO2 channel, wall (separating sCO2 with particles) thickness, particle-wall contact resistance and particle-side effective heat transfer coefficient. This study is focused towards reducing the particle side thermal resistance by incorporating single unit cell thick reticulated Octet lattice frame structures on the falling particle side to enhance the effective thermal conductivity of the particle channel and to enhance convective heat transfer between the falling particles and the solid phase of the falling particle channel (endwalls and fibers). Steady-state experiments were conducted to measure the effective thermal conductivity of lattice frame material for two cases: a) when void space was occupied by air, b) when void space was occupied with particles. Further, convective heat transfer experiments have been conducted with both air (steady-state) and particles (quasi steady-state) as “working fluid” for panels sandwiching the Octet array. Three different lattice porosities ranging from 0.75 to 0.9 have been tested for a wide range of air flow rates and a fixed particle flow rate (highest potential).

Aider, Youssef↗