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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Electronic characteristics of 'real' CdS surfaces.

Photovoltage spectroscopy (including photovoltage inversion and photovoltage quenching) was used to determine the electronic characteristics of real (basal and prismatic) surfaces of CdS. In room atmosphere, surface states with the following positions were found in the cadmium surfaces: Ec - Et equal to 0.05, 0.4, and 0.8 eV, and Ev - Et equal to 0.83 eV. The same surface states were present in the sulfur surfaces, with the exception of those at Ec - Et equal to 0.4 eV. In the prismatic and unetched basal surfaces, states at Ec - Et equal to 1.1 eV were found in addition to all of those found on the cadmium surfaces.

Lagowski, J.↗
NASA NTRS1972

Surface piezoelectric effect in non-centrosymmetric semiconductors - CdS.

It was found that mechanical bending of CdS wafers with the (00.1) orientation causes pronounced changes in the contact potential difference. The changes were of the order of one volt. This effect was attributed to the polarization induced in the depletion layer by the mechanical stress. On this basis a model was developed which accounts for the experimental results.

Lagowski, J.↗
NASA NTRS1973

Heat treatment effects in Cu2S-CdS heterojunction photovoltaic cells

The optical and electronic properties of single crystal Cu2S-CdS photovoltaic cells were investigated. In these cells trapped charge near the interface which is manifested by a persistent increase in junction capacitance (the photocapacitance) plays a significant role in determining the carrier transport properties. It was found that the severe degradation in short-circuit current observed in heat-treated cells can be separated into two components: (1) a relatively small thermal component occurring on heat-treatment in the dark, and (2) a much larger degradation caused by exposure to light at room temperature. By a short additional heat-treatment above approximately 100 C the cell can be completely restored to its condition before the optically caused degradation with no effect on the depletion layer width.

Fahrenbruch, A. L.↗
NASA NTRS1975

Optical absorption components of light-modulated absorption spectrum of CdS

The amplitude and decay coefficient of light-induced modulation of absorption (LIMA) was measured as a function of wavelength from 535 to 850 nm for single-crystal CdS. The decay coefficient exhibited a discontinuous resonance at 710 nm which was due to the overlap and cancellation of two opposing absorption changes. A method was developed to separate these opposing absorption changes using the measured decay coefficients. The discrete-level-to-band energy for one absorption change was found to be 1.64 eV. An improved model was developed which contains two associated levels in the band gap separated by 0.32 eV.

Conway, E. J.↗
NASA NTRS1975

Very low cost thin film CdS-Cu2S solar cell development using chemical spraying

A chemical spray process for the production of thin film CdS-Cu2S solar cells is discussed that is projected to cost less than $60/kW in very large scale production. The average efficiency of these cells has been improved from less than 0.3% in 1971 about 4.5% at present. Further developments for the process are considered to raise the efficiency, and to attain long life stability.

Samara, G. A.↗
NASA NTRS1975

CdS thin film solar cells for terrestrial power

The development of very low cost long lived Cu2S/CdS thin film solar cells for large scale energy conversion is reported. Excellent evaporated metal grid patterns were obtained using a specially designed aperture mask. Vacuum evaporated gold and copper grids of 50 lines per inch and 1 micron thickness were adequate electrically for the fine mesh contacting grid. Real time roof top sunlight exposure tests of encapsulated CdS cells showed no loss in output after 5 months. Accelerated life testing of encapsulated cells showed no loss of output power after 6 months of 12 hour dark-12 hour AMI illumination cycles at 40 C, 60 C, 80 C and 100 C temperatures. However, the cells changed their basic parameters, such as series and shunt resistance and junction capacitance.

Shirland, F. A.↗
NASA NTRS1976

Insolation measurements with a portable CuS-CdS radiometer

Solar radiation measurements were carried out with a portable Cu2S-Cds radiometer. The measurements were found to be accurate to better than 5% (better than 3% when sophisticated metering is employed). Calibration to an Eppley precision pyranometer is discussed.

Windawi, H. M.↗
NASA NTRS1976

Rise kinetics of light-induced modulation of absorption for a CdS crystal

An experimental study has been made of the rise kinetics for changes in optical absorption in a single crystal of CdS which was bulk excited by pulsed laser light. The experimental data were compared to calculations from a simple model involving a bimolecular process. Experimental and calculated values agreed to within the experimental error and confirmed that light-induced modulation of absorption is a bimolecular process.

Long, E. R., Jr.↗
NASA NTRS1977

Surface photovoltage in exciton absorption range in CdS

The high resolution, intrinsic spectra of surface photovoltage are reported for semiconducting n-type CdS single crystals. At reduced temperatures (120-160 K) the spectra exhibit three sharp maxima due to A, B and C free exciton transitions. Energy positions of these lines and valence band parameters (spin-orbit and crystal field splittings) estimated from surface photovoltage are in good agreement with values obtained by other methods. The excitonic transitions are very sensitive to surface treatment, i.e. polishing, etching, background illumination and surface doping. The mechanism of direct interaction of free excitons with surface states is proposed to explain exciton lines in surface photovoltage.

Morawski, A.↗
NASA NTRS1977

MIS diode structure in As/+/ implanted CdS

Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.

Hutchby, J. A.↗
NASA NTRS1980

CDS solid state phase insensitive ultrasonic transducer

A phase insensitive ultrasonic transducer which includes a CdS crystal that is annealed for a selected period of time and at a selected temperature to provide substantially maximum acoustic attenuation at the operating frequency of the transducer is described. Two electrodes are attached to the crystal with amplifier means and a signal processing system connected to one of the electrodes to provide an ultrasonic receiver.

Heyman, J. S.↗
NASA NTRS1989

Computerized Design Synthesis (CDS), A database-driven multidisciplinary design tool

The Computerized Design Synthesis (CDS) system under development at McDonnell Douglas Helicopter Company (MDHC) is targeted to make revolutionary improvements in both response time and resource efficiency in the conceptual and preliminary design of rotorcraft systems. It makes the accumulated design database and supporting technology analysis results readily available to designers and analysts of technology, systems, and production, and makes powerful design synthesis software available in a user friendly format.

Anderson, D. M.↗
NASA NTRS2018

Gated CDS Integrator

A Gated CDS Integrator (GCI) may amplify low-level signals without introducing excessive offset and noise. The GCI may also amplify the low level signals with accurate and variable gain. The GCI may include a modulator preceding a linear amplifier such that offset or noise present in a signal path between the modulator and a demodulator input is translated to a higher out of band frequency.

Quilligan, Gerard T.↗
NASA NTRS2018

Gated CDS Integrator

A Gated CDS Integrator (GCI) may amplify low-level signals without introducing excessive offset and noise. The GCI may also amplify the low level signals with accurate and variable gain. The GCI may include a modulator preceding an amplifier such that offset or noise present in a signal path between the modulator and a demodulator input is translated to a higher out of band frequency, and thereafter reduced by a double sampled discrete time integrator which also reduces thermal noise. The thermal noise may also be reduced by averaging the output of the discrete time integrator.

Quilligan, Gerard T.↗
DOE OSTI2013

CdS and Cd-Free Buffer Layers on Solution Phase Grown Cu2ZnSn(SxSe1- x)4 :Band Alignments and Electronic Structure Determined with Femtosecond Ultraviolet Photoemission Spectroscopy

The heterojunctions formed between solution phase grown Cu2ZnSn(SxSe1- x)4(CZTS,Se) and a number of important buffer materials including CdS, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission spectroscopy (fs-UPS) and photovoltage spectroscopy. With this approach we extract the magnitude and direction of the CZTS,Se band bending, locate the Fermi level within the band gaps of absorber and buffer and measure the absorber/buffer band offsets under flatband conditions. We will also discuss two-color pump/probe experiments in which the band bending in the buffer layer can be independently determined. Finally, studies of the bare CZTS,Se surface will be discussed including our observation of mid-gap Fermi level pinning and its relation to Voc limitations and bulk defects.

Haight, Richard↗
DOE OSTI2019

Scale and Rate in CdS Pressure-induced Phase Transition

Paper to be submitted to the 21st Biennial Conference of the APS Topical Group on Shock Compression of Condensed Matter (SHOCK19) that was held in June 2019. Website: https://www.aps.org/units/gsccm/meetings/annual/abstracts.cfm. Scale and Rate in CdS Pressure-induced Phase Transition.

36 MATERIALS SCIENCE↗