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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Thin film CZTSSe photovoltaic device

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

14 SOLAR ENERGY↗
DOE OSTI2025

X-Ray and Electron Spectroscopy of the CdS/(Ag,Cu)(In,Ga)Se 2 Interface With RbF Treatment

The chemical and electronic structure of the CdS/(Ag,Cu)(In,Ga)Se 2 (CdS/ACIGSe) interface for thin-film solar cells, involving an absorber with a bulk [Ag]/([Ag]+[Cu]) (AAC) ratio of 0.06, a state-of-the-art RbF post-deposition treatment (PDT), and a chemical-bath deposited CdS buffer layer, is studied. To gain a detailed and depth-resolved picture of the CdS/ACIGSe interface, synchrotron- and laboratory-based hard X-ray, soft X-ray, and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy are combined. Compared to the bulk of the absorber, a Cu- and Ga-poor ACIGSe surface is found, with a slightly increased AAC ratio. Strong evidence of a Rb–In–Se species (possibly with some Ag) at the absorber surface is compiled, with a corresponding band gap of 2.79 ± 0.12 eV. This finding is in clear contrast to comparable Ag-free Cu(In,Ga)Se 2 absorbers with RbF-PDT. The Rb–In–Se surface species is not removed by the (wet-chemical) CdS deposition process, while some Se diffuses into the CdS layer and segregates at its surface. The CdS buffer layer shows a band gap of 2.48 ± 0.12 eV, and a cliff (≈ -0.4 eV) is determined in the conduction band alignment at the interface between the Rb–In–Se species and the CdS buffer.

36 MATERIALS SCIENCE↗
NASA NTRS1987

Semiconductor structure and devices

Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

Dinkel, Nancy A.↗
DOE OSTI2016

Experimental observation of motion of edge dislocations in Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures

The Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures grown by the molecular epitaxy method are analyzed using high-resolution electron microscopy with atomic resolution. The thickness of the Ge{sub x}Si{sub 1–x} buffer layer is 7–35 nm. It is shown that such heterostructures relax in two stages: an ordered network of edge dislocations is formed during their growth (500°C) at the Ge/GeSi interface and then, contrary to the generally accepted opinion concerning their immobility, some of the edge dislocations move through the buffer GeSi layer to the GeSi/Si(001) interface during annealing at higher temperatures and x > 0.3. It is found that plastic relaxation of the GeSi buffer layer occurs due to motion of dislocation complexes of the edge type, consisting of a pair of complementary 60° dislocations with the ends of (111) extra planes located approximately at a distance from 2 to 12 interplanar spacings. It is shown that the penetration of dislocation complexes into the GeSi buffer layer and further to the GeSi/Si interface is intensified with increasing annealing temperature (600–800°C) and the fraction of Ge in the buffer layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Synthesis of antiferromagnetic Weyl semimetal Mn 3 Ge on insulating substrates by electron beam assisted molecular beam epitaxy

The antiferromagnetic kagome semimetals Mn 3 X (X = Ge, Sn, Ga) are of great interest due to properties arising from their Berry curvature, such as large anomalous Nernst and anomalous Hall coefficients, and spin to charge conversion efficiencies at ambient temperatures. However, the synthesis of epitaxial thin films of Mn 3 Ge in the desired hexagonal phase has been challenging because they do not wet insulating substrates, necessitating the use of a metallic buffer layer. Furthermore, a ferrimagnetic tetragonal phase also forms readily under typical growth conditions, interfering with hexagonal phase properties. We have synthesized atomically smooth and continuous epitaxial thin films of hexagonal Mn 3 Ge directly on insulating LaAlO 3 (111) substrates using electron beam assisted molecular beam epitaxy, using a three-step process that mitigates the formation of the tetragonal phase. The anomalous Nernst coefficient is found to be more than six times larger in our films than in sputtered thin films of Mn 3 Ge and significantly larger than that of Fe. Our approach can be used to grow thin layers of kagome materials, without interference from a buffer layer in transport properties, and may be applicable to a broader range of materials with large surface energies that do not grow readily on insulating substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Co-deposition of bismuth-nitrogen films on MgO (001) by molecular beam epitaxy

Here, we attempted to grow a thin film of BiN by co-deposition of bismuth and nitrogen on rock-salt structure MgO (001) substrates. Furthermore, we studied the effect of variation of the growth temperature and the nitrogen to bismuth flux ratios on sample growth. For the samples grown and conditions used, we do not find strong evidence for the formation of a bulk Bi-N alloy. Even for very high nitrogen to bismuth flux ratio, we observed only bismuth and no nitrogen using bulk Rutherford back-scattering spectroscopy measurements, and only 1%–2% nitrogen was seen through surface Auger electron spectroscopy measurements. The in-plane lattice measurements show that the resulting Bi (110) samples are strained, which is presumably caused by lattice mismatch between the sample and the substrate when grown without any buffer layer. The use of a high-temperature buffer layer helps to release strain in the sample but only along one axis. Measurements of the atomic layer spacing using x-ray diffraction and also scanning tunneling microscopy confirm the Bi (110) thin film sample structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spin transport in benzofurane bithiophene based organic spin valves

In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlO{sub x} buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology, electrical transport and oxygen contamination of the BF3 layer. A study of magnetic hysteresis cycles evidences spin-valve behaviour. Transport properties are indicative of unshorted devices with non-linear I-V characteristics. Finally we report a magnetoresistance of 3% at 40 K and 10 mV in a sample with a 50 nm thick spacer layer, using an AlO{sub x} buffer layer.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Round superconductor wires

A round superconductor wire and method for fabricating same are disclosed. Embodiments are directed to a round superconductor wire including at least two superconductor tapes wound on a wire former. Each superconductor tape includes: bottom stabilizer and silver layers; substrate disposed above the bottom silver layer; buffer film stack disposed above the substrate; superconductor film disposed above the buffer film stack; top silver layer disposed above the superconductor film; and top stabilizer layer disposed above the top silver layer. At least one of the bottom stabilizer layer, bottom silver layer, substrate, buffer film stack, superconductor film, top silver layer, or top stabilizer layer is of a different width, thickness, or material composition in one of the superconductor tapes than in another of the superconductor tapes. These and other embodiments achieve a round superconductor wire having improved current density in high magnetic field applications when made in small diameters.

Majkic, Goran↗
DOE OSTI2025

Micro-tensile characteristics of As-fabricated and irradiated AGR-2 TRISO fuel particle buffer, IPyC, and buffer-IPyC interlayer regions

A recently developed micro-tensile sample preparation technique was implemented to evaluate the tensile strengths of the buffer, IPyC, and buffer-IPyC interlayer regions of the unirradiated and irradiated AGR-2 TRISO fuel particles. Understanding the mechanical properties of the buffer-IPyC interlayer is essential for developing thermomechanical models of buffer-IPyC separation, yet there is a lack of experimental data on its micro-tensile properties. TEM analysis was conducted on these regions to determine the microstructural changes relevant to the samples' tensile properties. In the unirradiated TRISO particle samples, the buffer layer demonstrated the weakest tensile strength, while the IPyC layer exhibited the highest. Conversely, in the irradiated TRISO particle samples, the buffer-IPyC interlayer region showed the lowest tensile strength, with the IPyC layer being the strongest. Fractures in the samples from the buffer-IPyC region predominantly occurred either in the buffer layer or at the buffer-IPyC interface. However, some buffer-IPyC interlayer samples displayed stress-strain and fracture behaviors more akin to the IPyC layer than the buffer layer. Analysis of diffraction patterns suggests that irradiation may have increased anisotropy in the three regions tested. Despite this suggested increase in anisotropy, there was no evidence that it affected the measured strengths. The irradiated TRISO particles demonstrated a considerable increase in void space and a decrease in ultimate tensile strength within the buffer-IPyC interlayer region due to the densification and contraction of the buffer layer. Minor variations in diffraction ring patterns were also observed. These changes, coupled with a significant reduction in the Weibull modulus/shape parameter, imply that irradiation-induced densification leads to tearing between the buffer and IPyC layers at locations of elevated porosity in the buffer-IPyC interlayer region.

Tristructural isotropic (TRISO)↗
DOE OSTI2023

Exploring the interfacial structure and crystallinity for direct growth of Mn 3 Sn(0001) on sapphire (0001) by molecular beam epitaxy

The Kagome antiferromagnet Mn 3 Sn has garnered a lot of attention due to the presence of interesting properties such as anomalous Hall effects and Nernst effects. Until now, few papers have been reported to grow using molecular beam epitaxy with a buffer layer or on other substrates. In this paper, we discuss the synthesis of crystalline Mn 3 Sn layers, prepared on Al 2 O 3 (0001) without a buffer layer using molecular beam epitaxy. The growth is monitored in-situ using reflection high energy electron diffraction and measured ex-situ using X-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. The samples were deposited at 524 ± 5 °C, with an Mn: Sn atomic flux ratio of 3.2:1 for 90 minutes. Orientation relationships between the Mn 3 Sn films and the sapphire substrates are determined from in-plane and out-of-plane measurements. Our analysis indicates that the resulting film is predominantly c−plane oriented. Lastly, the samples prepared in this way were found to be discontiguous, showing a 3-dimensional morphology. According to first-principles calculations, the Mn 3 Sn exhibits a displaced Kagome structure in the very first stages of growth, for 2ML and 4ML growth on Al 2 O 3 (0001). This result is corroborated by calculating the surface formation energies and explains the observed RHEED patterns.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr 3 Al 2 O 6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr 3 Al 2 O 6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO 3 layer can be employed as an effective barrier to preserve Sr 3 Al 2 O 6 during subsequent growth, thus allowing its integration in a wider range of oxide heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Favorable electronic structure for organic solar cells induced by strong interaction at interface

To clarify the role of buffer layer in organic solar cells (OSCs), the electronic properties of bathocuproine (BCP)/Mg interface were systematically investigated by using ultraviolet photoemissions spectroscopy, high-resolution X-ray photoemission spectroscopy, angle-resolved X-ray photoemission spectroscopy and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results show there are gap states at the interface, which are caused by the interaction between BCP and Mg. The formation of Mg-N bond was found at the interface. The NEXAFS measurements show that BCP molecules for 1-2 monolayers are lying-down on the substrate, whereas orient randomly for thick BCP layer. It was supposed that the gap states and the highly-ordered orientation of thin BCP layer are the reasons for improving the performance of OSC with BCP buffer layer and low work function metal cathode.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Growth of GaAs on single-crystal layered-2D Bi 2 Se 3

This article demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi 2 Se 3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi 2 Se 3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi 2 Se 3 to form Ga 2 Se 3 , which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga-Bi 2 Se 3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.

14 SOLAR ENERGY↗
DOE OSTI2015

Thermally enhanced perpendicular magnetic anisotropy behaviors of ultrathin [Co/Pd]{sub n} multilayers via NiO{sub x} capping layer

We report the enhanced perpendicular magnetic anisotropy (PMA) features of ultrathin [Co/Pd]{sub 3} multilayers (MLs) employing a NiO{sub x} insertion layer at high annealing temperatures. Thermally enhanced PMA in [Co/Pd]{sub 3}/NiO{sub x} (capping layer) MLs were achieved at a specific capping layer thickness, while no PMA responses were observed for a NiO{sub x} (buffer layer)/[Co/Pd]{sub 3} ML, regardless of NiO{sub x} thickness. X-ray diffraction observations, including rocking curves, identified the relatively different crystalline characteristics of the NiO{sub x} capping and buffer layers. Origin of the enhanced PMAs of [Co/Pd]{sub 3} MLs containing a NiO{sub x} capping layer is described based on the NiO{sub x} capping effect possibly providing additional Co/Oxide i-PMA under high-temperature annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm{sup 2}/(V·s) at sheet charge density of 8.4 × 10{sup 12 }cm{sup −2}. Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1975

Rough-to-smooth transition of an equilibrium neutral constant stress layer

A model is proposed for low-level atmospheric flows over terrains of changing roughness length, such as those found at the windward end of landing strips adjoining rough terrain. The proposed model is used to develop a prediction technique for calculating transition wind and shear-stress profiles in the region following surface roughness discontinuity. The model for the transition region comprises two layers: a logarithmic layer and a buffer layer. The flow is assumed to be steady, two-dimensional, and incompressible, with neutral hydrostatic stability. A diagram is presented for a typical wind profile in the transition region, obtained from the logarithmic and velocity defect profiles using shear stress calculated by relevant equations.

Logan, E., Jr.↗