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At least 235 records · Page 13

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Abstract Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface‐mediated growth process for the controlled synthesis of high‐quality monolayer hBN is proposed and further demonstrated. It is discovered that the in‐plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single‐domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep‐ultraviolet emission at 6.12 eV stems from the 1s‐exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer‐scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

2D heterostructures↗

A Review of Scalable Hexagonal Boron Nitride ( h -BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, in this work, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

2D materials↗

Sequential Dual Alignments Introduce Synergistic Effect on Hexagonal Boron Nitride Platelets for Superior Thermal Performance

Planarly aligning 2D platelets is challenging due to their additional orientational freedom compared to 1D materials. Here, this study reports a sequential dual-alignment approach, employing an extrusion-printing-induced shear force and rotating-magnetic-field-induced force couple for platelet planarly alignment in a yield-stress support bath. It is hypothesized that the partial alignment induced by a directional shear force facilitates subsequent axial rotation of the platelets for planar alignment under an external force couple, resulting in a synergistic alignment effect. This sequential dual-alignment approach achieves better planar alignment of 2D modified hexagonal boron nitride (mhBN). Specifically, the thermal conductivity of the 40 wt% mhBN/epoxy composite is significantly higher (692%) than that of unaligned composites, surpassing the cumulative effect of individual methods (only 133%) with a 5 times more synergistic effect. For 30, 40, and 50 wt% mhBN composites, the thermal conductivity values (5.9, 9.5, and 13.8 W m –1 K –1 ) show considerable improvement compared to the previously reported highest values (5.3, 6.6, and 8.6 W m –1 K –1 ). Additionally, a 3D mhBN/epoxy heat sink is printed and evaluated to demonstrate the feasibility of device fabrication. The approach enables the planar alignment of electrically or thermally conducting 2D fillers during 3D fabrication.

36 MATERIALS SCIENCE↗

Sieving Hydrogen Isotopes via Machine Learning Assisted Chemical Vapor Deposition (CVD) of High‐Quality Monolayer Hexagonal Boron Nitride (h‐BN) on Iron Foils

Atomically thin two-dimensional (2D) ceramics, such as monolayer hexagonal boron nitride (h-BN), present potential for disruptive advances in separations. However, sub-atomic scale separation of hydrogen isotopes (H + /D + ) require near pristine 2D material membranes, and scalable synthesis of such high-quality h-BN comparable to mechanically exfoliated crystals remains a significant challenge. Here, we report a scalable Fe-catalyzed chemical vapor deposition (CVD) process for bottom-up synthesis of large-area, high-quality monolayer h-BN films, overcoming key limitations of conventional ammonia-based routes. By leveraging mechanistic insights and higher CVD temperatures, we suppress multilayer formation and achieve uniform monolayer h-BN coverage on commercially available Fe foils. Machine learning enables systematic exploration of the complex, multi-dimensional CVD parameter space (growth time, temperature, precursor temperature, multilayer faction, coverage), providing data-driven approaches to visualize and identify process regimes facilitating predominantly monolayer h-BN growth with minimal secondary nuclei/ad-layers. The optimized Fe-catalyzed CVD h-BN membranes show high-quality as observed by proton/deuteron (H + /D + ) selectivity ≈8.45, approaching the highest quality benchmark of mechanically exfoliated h-BN (H + /D + selectivity ≈10) as well as significantly outperforming Cu-catalyzed CVD h-BN membranes (H + /D + selectivity ≈3.62, control selectivity ≈1.7). Our work provides a scalable cost-effective route for high-quality monolayer h-BN synthesis for sub-atomic scale separations (H + /D + ) and demonstrates the broader potential of machine learning-guided optimization of CVD for advancing synthesis of 2D materials.

36 MATERIALS SCIENCE↗

Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor

Abstract With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p‐type transparent conductor. This work reports on reactive sputtering of amorphous BP films, their partial crystallization in a P‐containing annealing atmosphere, and extrinsic doping by C and Si. The highest hole concentration to date for p‐type BP (5 × 10 20 cm −3 ) is achieved using C doping under B‐rich conditions. Furthermore, bipolar doping is confirmed to be feasible in BP. An anneal temperature of at least 1000 °C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are stronger than that predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

36 MATERIALS SCIENCE↗

Ultradoping Boron on Si(100) via Solvothermal Chemistry

Ultradoping introduces unprecedented dopant levels into Si, which transforms its electronic behavior and enables its use as a next-generation electronic material. Commercialization of ultradoping is currently limited by gas-phase ultra-high vacuum requirements. Solvothermal chemistry is amenable to scale-up. However, an integral part of ultradoping is a direct chemical bond between dopants and Si, and solvothermal dopant-Si surface reactions are not well-developed. This work provides the first quantified demonstration of achieving ultradoping concentrations of boron (~1e14 cm 2 ) by using a solvothermal process. Surface characterizations indicate the catalyst cross-reacted, which led to multiple surface products and caused ambiguity in experimental confirmation of direct surface attachment. Density functional theory computations elucidate that the reaction results in direct B-Si surface bonds. Finally, this proof-of-principle work lays groundwork for emerging solvothermal ultradoping processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhancing Crystallization in Hybrid Perovskite Solar Cells Using Thermally Conductive 2D Boron Nitride Nanosheet Additive

Controlling crystallization and grain growth is crucial for realizing highly efficient hybrid perovskite solar cells (PSCs). In this work, enhanced PSC photovoltaic performance and stability by accelerating perovskite crystallization and grain growth via 2D hexagonal boron nitride (hBN) nanosheet additives incorporated into the active perovskite layer are demonstrated. Specifically, in situ X-ray scattering and infrared thermal imaging during the perovskite annealing process revealed the highly thermally conductive hBN nanosheets promoted the phase conversion and grain growth in the perovskite layer by facilitating a more rapid and spatially uniform temperature rise within the perovskite film. Complementary structural, physicochemical, and electrical characterizations further showed that the hBN nanosheets formed a physical barrier at the perovskite grain boundaries and the interfaces with charge transport layers, passivating defects, and retarding ion migration. As a result, the power conversion efficiency of the PSC is improved from 17.4% to 19.8%, along with enhanced device stability, retaining ≈90% of the initial efficiency even after 500 h ambient air storage. Here, the results not only highlight 2D hBN as an effective additive for PSCs but also suggest enhanced thermal transport as one of the pathways for improved PSC performance by 2D material additives in general.

2D materials↗

Understanding the influence of boron in additively manufactured GammaPrint®-700 CoNi-based superalloy

Boron is commonly added to superalloys in small amounts to enhance creep resistance, but can lead to cracking at high concentrations, especially during the additive manufacturing process. Two variants of CoNi-based GammaPrint®-700 superalloy with different B contents (0.08 at% vs 0.16 at%) were printed via laser powder bed fusion (LPBF) with the same printing parameters, with only the high B alloy exhibiting solidification cracking. Atom probe tomography (APT) revealed stronger segregation behaviors in the high B alloy compared to the low B alloy at both the inter-dendritic regions and grain boundaries (GBs). The segregation behavior at inter-dendritic regions was well captured with Scheil simulation and can correlate with the existing cracking susceptibility index (CSI) on cracking tendencies, although high angle GBs are where cracking occurs according to electron backscatter diffraction (EBSD) measurements. Additionally, the extent of GB segregation was compared between the high B and low B alloy. Higher B additions led to significantly more GB B segregation in the high B alloy compared to the low B alloy. Further, for the high B alloy, the cracked region of one GB exhibited higher levels of B compared to the uncracked region of the same GB. However, much higher B contents were also found in two other uncracked GBs in the high B alloy, which demonstrates that higher GB B concentrations are not fully responsible for the cracking. A much larger variance in GB B segregation content was found in the high B alloy compared to the low B alloy. These phenomena were explained with a solidification model with the GB segregation content expressed explicitly by a modified Langmuir-McLean equation. This model linked the GB segregation content with solidification undercooling, which can be used as quantitative cracking criteria for future builds.

36 MATERIALS SCIENCE↗

Boron coated straw-based neutron multiplicity counter for neutron interrogation of TRISO fueled pebbles

Pebble bed reactors (PBRs) can improve the safety and economics of the nuclear energy production. PBRs rely on TRIstructural-ISOtropic (TRISO) fuel pebbles for enhanced fission product retention. Accurate characterization of individual fuel pebbles would enable the validation of computational models, efficient use of TRISO fuel, and improve fuel accountability. Here, we have developed and tested a new neutron multiplicity counter (NMC) based on 192 boron coated straw (BCS) detectors optimized for 235 U assay in TRISO fuel. The new design yielded a singles and doubles neutron detection efficiency of 4.71% and 0.174%, respectively, and a die-away time of 16.7 μs. The NMC has a low intrinsic gamma-ray detection efficiency of 8.71 x 10 –8 at an exposure rate of 80.3 mR/h. In simulation, a high-efficiency version of the NMC encompassing 396 straws was able to estimate the 235 U in a pebble with a relative uncertainty and error both below 2% in 100 s.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Fe doped aluminoborate PKU-1 catalysts for the ketalization of glycerol to solketal: Unveiling the effects of iron composition and boron

An inexpensive Fe doped aluminoborate consisted of 18% Fe in PKU-1 material that exhibits high selectivity of 4-hydroxymethy-2,2-dimethyl-1,3-dioxolane (Solketal, 98.3%), considerable activity (TOF 51.7 h -1 ), and recyclable ability in the ketalization of glycerol to Solketal with acetone at 318 K has been developed. Here our study demonstrated that the structure of Fe (less agglomerated iron species vs. FeO x clusters) can be tuned by changing Fe loading in the PKU-1 material, which correlated well with experimental observations. Furthermore, the surface boron sites were promoted by iron loading and behaved as Lewis-acid sites to facilitate the reaction process of glycerol ketalization, while the Solketal selectivity was closely related with the structure of iron species in PKU-1, which was proved by kinetic studies, density function theory (DFT) calculations, and a series of spectroscopy studies. This investigation demonstrates that the surface B sites can play important roles in the reaction instead of being spectators.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Elucidating interfacial active sites in ruthenium–boron nitride nanotube catalysts for efficient low-temperature ammonia-to-hydrogen conversion

Tailoring the interaction between metal nanoparticles and catalyst support presents a prominent strategy to enhance both the activity and durability in hydrogen (H 2 ) production catalysts. In this work, ruthenium nanoparticles (NPs) supported on boron nitride nanotubes (Ru/BNNT) are introduced as efficient and thermally robust catalysts for low-temperature ammonia (NH 3 ) decomposition. The unique curvature and ionic nature of BNNTs enable uniform Ru dispersion and metal-support interactions (MSIs), resulting in exceptional H 2 generation efficiency and long-term operational stability. In-situ transmission electron microscopy (TEM) reveals remarkable thermal resistance of Ru/BNNT with minimal nanoparticle sintering, while density functional theory (DFT) calculations uncover a dual-site mechanism in which interfacial Ru atoms promote NH 3 dissociation and adjacent Ru sites facilitate 2H* recombination and H 2 desorption. This cooperative interaction between metal NPs and the BNNT support underpins the outstanding catalytic performance and durability observed. In conclusion, the findings highlight the strategic potential of BNNTs as versatile supports for high-performance and stable catalysts in sustainable H 2 energy conversion and related catalytic processes.

36 MATERIALS SCIENCE↗

Impacts of point defects on shallow doping in cubic boron arsenide: A first principles study

Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant challenge, mostly as a result of the influence of defects. In the present study, we employed density functional theory (DFT) to explore the impacts of the common point defects and impurities on p-type doping of Be B and Si As , and on n-type doping of Si B and Se As . We found that the most favorable point defects formed by C, O, and Si are C As , O B O As , Si As , C As Si B , and O B Si As , which have formation energies of less than 1.5 eV. While the O impurity detrimentally affects both p- and n-type dopings, C and Si impurities are harmful for n-type dopings, making n-type doping a potential challenge. Interestingly, the antisite defect pair A s B B As benefits both p- and n-type doping. Finally, the doping limitation analysis presented in this study can potentially pave the way for strategic development in the area of BAs-based electronics.

36 MATERIALS SCIENCE↗

Active Thermochemical Tables: Should the enthalpy of formation of gas phase boron atom be revised?

The Active Thermochemical Tables approach produces the enthalpy of formation of gas phase boron atom: Δ f H° 298 (B (g) ) = 570.48±0.61 kJ/mol and Δ f H° 0 (B (g) ) = 565.38±0.61 kJ/mol. This is about 5 kJ/mol higher and nearly an order of magnitude more accurate than the CODATA value. Here, while the ATcT value is in excellent agreement with the revisions proposed by Bauschlicher, Martin, and Taylor [J. Phys. Chem. A 103 (1999) 7715] and by Karton and Martin [J. Phys. Chem. A 111 (2007) 5936], it invalidates several earlier theoretical revisions that are too high by up to 5 kJ/mol.

74 ATOMIC AND MOLECULAR PHYSICS↗

Nano zero valent iron electrodeposition at boron doped diamond electrodes

Here, in this study, we present an ecofriendly and simple electrochemical method for synthesizing nano zero-valent iron particles (nZVIs) directly on boron-doped diamond (BDD) electrode surfaces. A BDD electrode served as the substrate for electrodeposition using a 5 mM FeCl 3 /0.1 M KCl solution and chronoamperometry at an applied potential of −1.3 V versus Ag/AgCl (1 M KCl), as determined by cyclic voltammetry (CV) and supported by Pourbaix diagram analysis. The electrochemical behavior and surface modification were characterized using CV, electrochemical impedance spectroscopy (EIS), and surface analysis and microscopy techniques. The results confirm that BDD electrodes can serve as effective platforms for a controlled deposition of 56 nm nZVIs, offering a promising strategy for the development of advanced materials for environmental remediation, catalysis, and sensing applications.

36 MATERIALS SCIENCE↗

Elucidating the role of surface species in CO oxidation catalyzed by boron nitride nanotube supported transition metal oxides

Boron nitride nanotube (BNNT) is considered a highly promising catalyst support due to its outstanding thermal stability and chemical inertness. These characteristics make BNNT an attractive alternative for high-temperature applications. However, most studies to date have focused on incorporating platinum group metals (PGMs) to achieve high activity. Although BNNT-supported PGM catalysts are highly effective, their scarcity and high cost hinder widespread use in industrial processes. In this study, BNNT-supported transition metal oxides (TMO x /BNNT; TM = Fe, Co, Ni, and Cu) catalysts were investigated, and CO oxidation was applied as a model reaction to evaluate their catalytic performance. Several characterization techniques, including SEM-EDX, TEM, SXRD, H 2 -TPR, and XPS, were employed to examine their physicochemical properties. Notably, the particle size of the metal oxides differed significantly depending on the metal type. This variation is primarily attributed to the inherent metal–support interactions and the thermodynamic stability of each oxide during synthesis. These properties also affected catalytic activity, and various parameters, such as oxygen mobility and redox behavior, played important roles in determining performance. Finally, in situ DRIFTS, CO-TPSR, reaction-order analysis, and 18 O 2 isotope-labeling experiment were used to investigate the reaction mechanism. In conclusion, the findings provide insights into the design of cost-effective BNNT-supported catalysts and highlight their potential applicability in oxidation reactions.

36 MATERIALS SCIENCE↗

Electron diffraction radial distribution function analysis of amorphous boron carbide synthesized by ion beam irradiation and chemical vapor deposition

Amorphous boron carbide (a-BxC) networks consist of light elements, and their low atomic scattering factors makes structural analysis by x-ray diffraction difficult. Electron diffraction has an advantage of detecting the light elements, because of the strong interaction between the matter and electrons. In this work, we prepared a-BxC by ion beam technologies and plasma-enhanced chemical vapor deposition, and characterized their structures via atomic pair-distribution functions derived from electron diffraction intensity profiles. It was found that a pentagonal pyramid is the most favorable cluster in a-B4C generated by ion irradiation, while C—C homonuclear bonds were formed in the deposited a-B x C thin film. X-ray photoemission spectroscopy revealed that the a-BxC thin film possesses more carbon than B 4 C, which is responsible for the formation of the homonuclear bonds.

36 MATERIALS SCIENCE↗

Persistent hot carrier diffusion in boron arsenide single crystals imaged by ultrafast electron microscopy

Cubic boron arsenide (BAs) is promising for microelectronics thermal management because of its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties because of small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the diffusion of photocarriers in BAs single crystals. Surprisingly, we observed ambipolar diffusion at low optical fluence with persistent hot carrier dynamics for above 200 ps, which can likely be attributed to the large frequency gap between acoustic and optical phonons, the same feature that is responsible for the high thermal conductivity. At higher optical fluence, we observed spontaneous electron-hole separation. Our results show BAs is an attractive optoelectronic material combining high thermal conductivity and excellent photocarrier transport properties. Finally, our study also demonstrates the capability of SUEM to probe photocarrier transport in emerging materials.

36 MATERIALS SCIENCE↗

Boron-loaded organic glass scintillators

Herein we report the progress towards an organic glass scintillator with fast and thermal neutron sensitivity providing “triple” pulse shape discrimination (PSD) through the inclusion of a boron-incorporated aromatic molecule. Here, the commercially available molecule 2-(p-tolyl)-1,3,2-dioxaborinane (TDB) can be readily synthesized in one step using inexpensive materials and incorporated into the organic glass scintillator at 20% by weight or 0.25% 10 B by mass. In addition, we demonstrate that TDB can be easily scaled up and formulated into organic glass scintillator samples to produce a thermal neutron capture signal with a light yield equivalent to 120.4 ± 3.7 keVee, which is the highest value reported in the literature to date.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗