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At least 235 records · Page 13

Efficient boron nitride nanotube formation via combined laser-gas flow levitation

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Efficient boron-carbon-nitrogen nanotube formation via combined laser-gas flow levitation

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

42 ENGINEERING↗

Boron nitride converted carbon fiber

This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

36 MATERIALS SCIENCE↗

Borophenes, boron layer allotropes and methods of preparation

A method of preparing an atomically-dimensioned elemental boron allotrope includes providing a substrate at a temperature greater than about 200° C.; generating elemental boron vapor from a solid elemental boron source; and contacting said substrate with said boron vapor for at least one of a rate and at a pressure sufficient to deposit on said substrate a boron allotrope comprising an elemental boron layer comprising a boron atomic thickness dimension, said method under negative pressure.

Hersam, Mark C.↗

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

36 MATERIALS SCIENCE↗

Lattice expansion due to hydrogen absorption into β-rhombohedral boron

β-Rhombohedral boron (β-boron) represents one of the most popular and important allotropic forms of elemental boron. The unit cell of β-boron crystal consists of B 106.6 with a complicated and relatively open structure. We have previously reported the abrupt lattice expansion and shrinkage of β-boron crystal by thermal treatment above 700 K and photoirradiation at room temperature. Our recent studies, combined with X-ray diffraction and atom probe tomography experiments, suggest that the lattice expansion and shrinkage are related to the absorption and release of hydrogen into the structure. In conclusion, the results lead us to a new application of β-boron as a photo-switchable hydrogen storage material.

Atom probe tomography↗

Growth of Hexagonal Boron Nitride from Molten Nickel Solutions: A Reactive Molecular Dynamics Study

Metal flux methods are excellent for synthesizing high-quality hexagonal boron nitride (hBN) crystals, but the atomic mechanisms of hBN nucleation and growth in these systems are poorly understood and difficult to probe experimentally. Here, we harness classical reactive molecular dynamics (ReaxFF) to unravel the mechanisms of hBN synthesis from liquid nickel solvent over time scales up to 30 ns. These simulations mimic experimental conditions by including relatively large liquid nickel slabs containing dissolved boron and a molecular nitrogen gas phase. Overall, the reaction takes place almost exclusively on the surface of the liquid nickel, owing to the low solubility of nitrogen in bulk nickel and the intermediate species’ preference for the metal–gas interface. The formation of hBN invariably begins by reaction of dinitrogen with nickel-solvated boron atoms at the surface, forming intermediate N–N–B species, which typically evolve into B–N–B units through a short-lived intermediate where a single nitrogen atom is coordinated by one nitrogen and two boron atoms. The resulting B–N–B units, in turn, coalesce with growing hBN nuclei and carry nitrogen between hBN nanocrystals in an Ostwald ripening process. The amount of hBN produced on the tens of nanosecond time scale depends critically on the boron concentration, while having a much weaker dependence on the N 2 pressure for the regime considered (N 2 pressures of 2.5–10 MPa, Ni–B solutions with 6–12% boron by atom fraction). The highest rate of hBN formation occurs at the lowest temperature considered (1750 K, just above the melting point of nickel), while no hBN sheets are formed at 2000 K or above. An analysis of the transition pathways for nitrogen atoms shows that the final step, incorporation of small B–N motifs into larger hBN sheets, is the rate-limiting step in the regimes considered. While raising the temperature from 1750 to 2000 K has little effect on the formation of intermediates (N–N–B, B–N–B, etc.), the lack of large hBN sheets at temperatures >1900 K is explained by decreased probability of the final step and increased probability of breakup of hBN into B–N motifs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

36 MATERIALS SCIENCE↗

Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases, the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Boron‐polymer composites engineered for compression molding, foaming, and additive manufacturing

Abstract Boron (specifically 10 B) is the element of choice to shield thermal neutrons due to its large (n, α) cross‐section; however, very few polymer composites containing high boron concentrations are available. This study aimed to determine the maximum possible amount of boron that could be introduced into a polymer matrix. Diverse manufacturing techniques, ranging from additive manufacturing to compression molding, were employed to fabricate inks and filaments for 3D printing, foams, and flexible pads. Composites using siloxanes, poly(lactic acid), and acrylonitrile butadiene styrene containing up to 80 wt% boron were sucessufully fabricated. The addition of known plasticizers (polyethylene glycol) and reinforcing agents (carbon nanofibers and fumed silica) helped to overcome fabrication problems such as clogging of the printing nozzle or crumbling of compression molded parts. In addition, the thermal‐mechanical properties of these novel boron composites were determined and shown to vary according to boron concentration, presence of additives, and fabrication techniques utilized.

36 MATERIALS SCIENCE↗

Boron Removal by Adsorption on Cobalt(II) Doped Chitosan Bio-composite

Cobalt(II) doped chitosan bio-composite was prepared, characterized and used to oxoborate separation from aqueous solutions. The adsorption process was carried out in a batch system. The effect of pH, temperature, time and initial boron concentration on the boron adsorption were tested. The maximum boron adsorption was reached at pH range 8.0–8.5 at room temperature and within 60 min. Calculations based on Langmuir and Freundlich models showed the heterogeneous nature of boron adsorption on Co-CTS bio-composite. On the base of research on optimization of pH and results from XRD and FTIR analysis it was found that boron adsorption by Co-CTS occurred through the co-precipitation and adsorption of B on cobalt hydroxide following the Coulomb attraction of B(OH){sub 4}{sup −} species on positively charged sites and molecular attraction of H{sub 3}BO{sub 3} through hydrogen bond with amine or hydroxyl groups of chitosan. The modelling of the thermodynamic data indicated the nonspontaneous and exothermic nature of the adsorption process. The pseudo-second-order model adequately described the boron adsorption on Co-CTS hydrogel. Desorption by means of alkaline solution at pH 12 was carried out successfully. Adsorption–desorption efficiencies in 3 cycles were almost 100%.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Model Implementation of Boron Removal Using CaCl{sub 2}-CaO-SiO{sub 2} Slag System for Solar-Grade Silicon

A new CaCl{sub 2}-CaO-SiO{sub 2} slag system was recently proposed to remove boron from metallurgy-grade silicon by oxidized chlorination and evaporation. To further investigate the boron transformation process at a high temperature, a model implementation to present the transfer of boron from molten silicon to the gas phase via slag is introduced. Heat transfer, fluid flow, the chemical reactions at the interface and surface, the mass transfer and diffusion of boron in the molten silicon and slag, and the evaporation of BOCl and CaCl{sub 2} were coupled in this model. After the confirmation of the thermal field, other critical parameters, including the boron partition ratios (L{sub B}) for this slag from 1723 K to 1823 K (1450 °C to 1550 °C), the thicknesses of the velocity boundary layer at the surface and interface, the mass transfer coefficients of the boundary layer at the surface and interface, and partial pressure of BOCl in the gas phase were analyzed to determine the rate-limiting step. To verify this model implementation, boron removal experiments were carried out at various temperatures and with various initial mass ratios of slag to silicon (μ). The evaporation rate of CaCl{sub 2} was also measured by thermogravimetry analysis (TGA).

36 MATERIALS SCIENCE↗

The effect of boron addition on the deformation behavior and microstructure of β-solidify TiAl alloys

Highlights: • Borides could promote the DRX formation to soften TiAl alloys. • Boron addition increases firstly and then stabilizes the deformation activate energy. • The stable region expands with boron increasing in processing maps. • The DRX critical strain increases firstly and then decreases with boron increasing. • DRX softening and strengthening from solid solution and borides influence deformation behavior. - Abstract: The effect of boron addition on the deformation behavior and microstructure of Ti-43Al-6Nb-1Mo -1Cr alloys have been studied in this paper. Boron addition would induce Ti{sub 2}Al(P6{sub 3}/mmc) phase with hexagonal structure formation on the interfaces between TiB and γ phase. TiB would be the obstacles for dislocations slipping and increase the stacking fault energy. Ti{sub 2}Al could also provide the chemical foundation for DRXed γ nucleation and disappear after thermal deformation. Both these two phase could promote DRXed grains nucleation to soften the alloys during thermal deformation. With the strengthen effect of boron solid solution and TiB obstacles, the microstructure evolution, phase transformation and deformation behavior are also discussed and concluded as follow.

36 MATERIALS SCIENCE↗

Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH{sub 4} played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B{sub 2}O{sub 3} and KBH{sub 4} as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH{sub 4} played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed.

36 MATERIALS SCIENCE↗

Investigation of boron powder flow rates on real-time wall

The limit of boron flow rates for real-time conditioning of the first walls has been systematically investigated in the Experimental Advanced Superconducting Tokamak (EAST) with a full metal wall. Initially, solid boron injection demonstrated effective control over carbon impurities and deuterium recycling on the basis of pre-discharge boronization. A minimum flow rate, identified between 1.0 mg/s and 2.0 mg/s, was necessary for actively improving wall conditions under specific plasma operating scenarios, with this effect progressively enhancing as boron flow rates increased. Additionally, a maximum flow rate, estimated between 3.5 mg/s and 8.0 mg/s, was identified for these plasma conditions. When boron flow rates exceeded this maximum, boron-induced fueling effects influenced the plasma line-averaged density, and at excessively high flow rates, plasma disruption was observed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Surface Basic Site Effect on Boron-Promoted Platinum Catalysts for Dry Reforming of Methane

Platinum has been shown to be an active catalyst for the dry reforming of methane (DRM), which converts CO 2 and CH 4 into 2CO and 2H 2 (synthesis gases) that can further be processed to produce valuable chemical feedstocks. Catalytic activity is often improved by the addition of promoter atoms, which are typically transition metals or noble metals, such as PtNi and PtSn. Recently, boron has shown to be an effective and low-cost catalyst promoter. Pt/B/SiO 2 catalysts were prepared for DRM catalysis and compared with Pt/SiO 2 catalysts without boron promotion. Both catalysts had similar surface concentrations of platinum, but the catalytic activity at 750 °C after 14 h for boron-containing catalyst was very high, resulting in nearly 100% CO 2 conversion and a H 2 /CO ratio close to unity, compared to 12% CO 2 conversion and H 2 /CO of 0.35 for boron-free Pt/SiO 2 . The catalysts were investigated with X-ray absorption spectroscopy (XAS), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), and CO 2 temperature-programmed desorption (CO 2 -TPD) to identify the deactivating factors. It was determined that neither platinum nanoparticle sintering nor coking was a significant factor in catalyst deactivation; instead, boron had an effect on the reactive surface groups on the SiO 2 support. Finally, these surface groups, such as hydroxyls and surface basic sites, enhance the adsorption of CO 2 and potentially stabilize intermediate carbonate species, resulting in a high CO 2 conversion for boron-promoted platinum catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effect of boron concentration on recombination at the p-Si–Al{sub 2}O{sub 3} interface

We examine the surface passivation properties of Al{sub 2}O{sub 3} deposited on boron-doped planar 〈100〉 crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10{sup 15} to 5.2 × 10{sup 19} cm{sup −3}. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al{sub 2}O{sub 3} films. The surface recombination rate of each sample is determined from photoconductance measurements together with the measured dopant profiles via numerical simulation, using the latest physical models. These values are compared with calculations based on the interface properties determined from capacitance–voltage and conductance measurements. It is found that the fundamental surface recombination velocity of electrons, S{sub n0}, which describes the chemical passivation of the interface, is independent of the surface boron concentration N{sub s} for N{sub s} ≤ 3 × 10{sup 19} cm{sup −3}, and in excellent agreement with values calculated from the interface state density D{sub it} and capture coefficients c{sub n} and c{sub p} measured on undiffused boron-doped surfaces. We conclude that the physical properties of the Si–Al{sub 2}O{sub 3} interface are independent of the boron dopant concentration over this range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Guided basin-hopping search of small boron clusters with density functional theory

The search for the ground state structures of Boron clusters has been a difficult computational task due to the unique metalloid nature of Boron atom. Previous research works had overcome the problem in the search of the Boron ground-state structures by adding symmetry constraints prior to the process of locating the local minima in the potential energy surface (PES) of the Boron clusters. In this work, we shown that, with the deployment of a novel computational approach that incorporates density functional theory (DFT) into a guided global optimization search algorithm based on basin-hopping, it is possible to directly locate the local minima of small Boron clusters in the PES at the DFT level. The ground-state structures search algorithm as proposed in this work is initiated randomly and needs not a priori symmetry constraint artificially imposed throughout the search process. Small sized Boron clusters so obtained compare well to the results obtained by similar calculations in the literature. The electronic properties of each structures obtained are calculated within the DFT framework.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗