Annealing of neutron-irradiation-induced changes in impurity conduction in antimony- doped germanium.
Annealing of neutron irradiation induced changes in impurity conduction in Sb-doped Ge
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Annealing of neutron irradiation induced changes in impurity conduction in Sb-doped Ge
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Laser produced Sb and Te vaporization near critical point, using time of flight mass spectrometer
Vapor composition and condensed phase structure of As and Sb compounds with group VIa elements analyzed by laser mass spectrometer
Electron irradiation induced separation of Sb from SbCl3 solutions in anhydrous alcohols, ethers, ketones, acids, ethers, and aromatic hydrocarbons
Sb concentrations determined by radiochemical neutron activation analysis in 60 iron meteorites range from 0.2 ng/g to 36 microg/g. The meteorites with the highest Sb concentrations are those of the nonmagmatic groups IAB and IIICD, while meteorites with the lowest Sb concentrations are found in groups IVA and IVB. In all groups Sb is positively correlated with Ni; slopes on log Sb vs log Ni plots decrease with increasing Ni. This decrease may reflect an increasing tendency to avoid schreibersite during the analysis of high-Ni meteorites because Sb partitions strongly into schreibersite. It is found that schreibersite from New Westville is enriched in Cr, Ni, Ge, As, Sb, and Au and depleted in Fe, Co, Ir; the Sb content in schreibersite is 540 times higher than the bulk metal value.
The effect of Sb substitution and simultaneous substitution of Pb and Sb on the superconducting transition temperatures in the BiSrCaCuO system is investigated. The 2:2:2:3 phase is of particular interest since any small increase in the transition temperature could be of great interest. More that 90 different samples were prepared based on 2:2:2:3 stoichiometry in the BiSrCaCuO system. After this preliminary attempt, four different families of samples were investigated. In the first family of samples, Bi was substituted by Sb to form Bi(1.9)Sb(0.1)Sr2Ca2Cu3O(y). The second group of samples were prepared by simultaneous addition of Pb and Sb with nominal composition Bi(1.8)Pb(0.1)Sb(0.1)Sr2Ca2Cu3O(y). The third and fourth groups were prepared to determine the effect created when the Pb concentration is increased with the nominal compositions being Bi(1.7)Pb(0.1)Sr2Ca2Cu3O(y) and Bi(1.6)Sb(0.1)Sr2Ca2Cu3O(y). The results of these investigations are presented with a discussion.
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The Ru-Sb phase diagram is not available and very little informations is known about this system.
In this paper, we have used the OMR technique to study the minority carrier lifetimes in three InAs/GaSb-photoluminescence (PL) structures with different number of periods in the absorber: 300, 400 and 600 periods respectively. The feasibility of using a visible 643 nm laser source with short penetration depth for lifetime measurements was studied by comparing the achieved results to measurements performed on the same samples with a 1550 nm IR laser source, which penetrates much deeper into the sample. Despite the differences in excitation wavelengths and penetration depths, the results from both measurements were very similar. This indicates that the diffusion length is long enough to facilitate a homogeneous distribution of excess carriers in the material.
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