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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Impact of a minority relativistic electron tail interacting with a thermal plasma containing high-atomic-number impurities

A minority relativistic electron component can arise in both laboratory and naturally-occurring plasmas. In the presence of high-atomic-number ion species, the ion charge state distribution at low bulk electron temperature can be dominated by relativistic electrons, even though their density is orders of magnitude lower. This is due to the relativistic enhancement of the collisional excitation and ionization cross sections. The resulting charge state effect can dramatically impact the radiative power loss rate and the related Bethe stopping power of relativistic electrons in a dilute plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Improving molecular alignment and charge percolation in semiconducting polymer films with highly localized electronic states through tailored thermal annealing

Here, we have recently developed a strategy to improve charge percolation efficiency in a renowned family of naphthalene-diimide bithiophene (PNDI-T2) copolymers, based on the application of a tailored thermal treatment on pre-aligned films. Here we show that the accurate choice of thermal post-processing temperatures can induce a notable lamellar thickening and an improvement of molecular alignment, the latter being favored by alkyl chains with longer branches. Correspondingly, enhanced transport properties are observed. Interestingly, these are found to be independent of lamellar thickness. In fact, within this family of molecules, characterized by a locked non-planar conformation and strong intramolecular charge localization, the orientational order within charge percolation paths was found to be the only factor dictating charge transport.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Electronic assembly having sectional thermal management

The first board section comprises a switching module with heat-generating semiconductor switches associated with a first operational temperature range. The first board section has a first conductive layer of a first thickness. The second board section comprises a plurality of capacitors mounted on a second circuit board. The second board section has conductive traces for interconnecting the capacitors as a network. The capacitors are associated with a second operational temperature range that is lower than the first operational temperature range. A thermal isolation intermediary forms a barrier between, or adjoining, the first board section and the second board section, where the first board section and the second board section are spaced part from each other by the thermal isolation intermediary.

Schmit, Christopher J.↗
DOE OSTI2024

Energetic Particles - microturbulence interaction thrust (EP SIWG white paper)

This white paper outlines a strategic approach to Energetic Particle (EP) research, aimed at applying the results to the future burning devices such as ITER. Our goal is to deepen the understanding of the interplay between plasma background microturbulence and diverse species of energetic ions in burning plasma devices. This strategy is poised to advance our knowledge in this crucial area of fusion science, paving the way for significant breakthroughs in plasma physics and fusion energy research. We consider the confinement of energetic ions such as auxiliary heating beams, minority ions from ICRH, and fusion product alpha particles. Recent studies have underscored the potential of EP/microturbulence interaction to enhance fusion plasma performance by stabilizing microturbulence. However, it also poses risks, such as exacerbating Alfvénic eigenmode (AE) instabilities, which could compromise the sustainability of plasma discharge by causing EP losses. The interplay between EPs and background microturbulence is evident in the phenomenon of effective pitch angle scattering, a crucial aspect of the quasilinear (QL) theory. This theory is integral to developing numerically-efficient yet comprehensive and self-consistent approaches, recently employed to investigate the relaxation of energetic particle populations in the holistic modeling of fusion-grade plasmas. The primary objectives of this white paper thrust encompass a dual focus. First is that we need to delve into the mechanisms through which microturbulence engenders effective pitch angle scattering. This investigation will entail the examination of the presence of known or self-consistently predicted spectra of modes accountable for microturbulence. In these explorations, electrostatic microturbulence serves as a logical initial stride towards achieving the trust's objectives. This endeavor is anticipated to yield formulations expressing the parametric dependencies of the effective pitch angle scattering frequency on variables such as thermal plasma electron and/or ion temperatures, as well as their respective thermal conductivities. In our second objective, we aim to delve into the intricate formation of zonal flow (ZF) structures amidst the complex interplay of microturbulence and Alfvenic eigenmodes (AEs). This endeavor poses greater challenges as we seek to unravel the macroscopic manifestations influenced by microturbulence, termed as zonal structures (ZS), stemming from microturbulence-induced ZF. Drawing from this understanding, we anticipate employing a QL approach to yield comprehensive insights into the distribution function of energetic particles (EP) within phase space. This method entails resolving the dominant multidimensional phase space diffusion processes while effectively averaging over the rapid ballistic responses. Nevertheless, substantial strides remain imperative to realize a comprehensive whole-device modeling framework. This entails meticulous verification and validation exercises against experimental observations, as well as rigorous benchmarking against theoretical frameworks and numerical simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

High thermal conductivity in wafer-scale cubic silicon carbide crystals

High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m –1 K –1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.

42 ENGINEERING↗
DOE OSTI2022

Sub-threshold ultrafast one-photon photoemission from a Cu(111) photocathode

Single-photon photoemission of electrons for incident photon energies below the surface work function is reported for a single-crystal Cu(111) photocathode. Spectral characterization of the quantum efficiency and mean transverse energy of the emitted electrons is shown to be consistent with emission from a thermalized hot electron distribution photoexcited on sub-picosecond time scales into an upper conduction band at the L-point of the Brillouin zone of copper. To our knowledge, this is the first time that such excited-state thermionic emission has been observed from a planar metal photocathode, and then from a commonly used photocathode material. The results, therefore, indicate the potential importance of such band structure dependent sub-threshold photoemission mechanisms on the performance of photocathodes employed for the generation of short electron pulses using sub-picosecond laser pulses. Consequently, the combined experimental and theoretical work presented in this paper contributes to solid-state photocathode-based research aimed at our understanding and selection (or discovery) of high brightness photo-electron sources required for many electron-based diffraction, imaging, and accelerator applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Cryogenic C-band wavelength division multiplexing system using an AIM Photonics Foundry process design kit

Cryogenic environments make superconducting computing possible by reducing thermal noise, electrical resistance and heat dissipation. Heat generated by the electronics and thermal conductivity of electrical transmission lines to the outside world constitute two main sources of thermal load in such systems. As a result, higher data rates require additional transmission lines which come at an increasingly higher cooling power cost. Hybrid or monolithic integration of silicon photonics with the electronics can be the key to higher data rates and lower power costs in these systems. We present a 4-channel wavelength division multiplexing photonic integrated circuit (PIC) built from modulators in the AIM Photonics process development kit (PDK) that operate at 25 Gbps at room temperature and 10 Gbps at 40 K. We further demonstrate 2-channel operation for 20 Gbps aggregate data rate at 40 K using two different modulators/wavelengths, with the potential for higher aggregate bit rates by utilizing additional channels.

42 ENGINEERING↗
DOE OSTI2024

Sub-1K Cold-Electron Quantum Well Switching at Room Temperature

Quantum states can provide means to systematically manipulate the transport of electrons. Here, in this study, we present electron transport across quasi-bound states of two heterogeneous quantum wells (QWs), where the transport of thermally excited electrons is blocked or enabled depending on the relative positions of the two quasi-bound states, with an abrupt current onset occurring when the two QW states align. The QW switch comprises a source (Cr), QW1 (Cr 2 O 3 ), QW2 (SnO x , x < 2), a tunneling barrier (SiO 2 ), and a drain (Si), where the effective electron mass of QW1 (m* QW1 ) is selected to be larger than QW2 (m* QW2 ). The current-voltage (I-V) measurements of the fabricated devices show abrupt current onsets, with the current transition occurring within 0.25 mV, corresponding to an effective electron temperature of 0.8 K at room temperature. Since transistor power consumption is fundamentally tied to effective electron temperature, this sub-1K cold-electron QW switching holds promise for highly energy-efficient computing.

Fermi−Dirac thermal smearing↗
DOE OSTI2021

Specifics of Thermal Transport in Graphene Composites: Effect of Lateral Dimensions of Graphene Fillers

In this work, we report on the investigation of thermal transport in noncured silicone composites with graphene fillers of different lateral dimensions. Graphene fillers are comprised of few-layer graphene flakes with lateral sizes in the range from 400 to 1200 nm and the number of atomic planes from 1 to ~100. The distribution of the lateral dimensions and thicknesses of graphene fillers has been determined via atomic force microscopy statistics. It was found that in the examined range of the lateral dimensions, the thermal conductivity of the composites increases with increasing size of the graphene fillers. The observed difference in thermal properties can be related to the average gray phonon mean free path in graphene, which has been estimated to be around ~800 nm at room temperature. The thermal contact resistance of composites with graphene fillers of 1200 nm lateral dimensions was also smaller than that of composites with graphene fillers of 400 nm lateral dimensions. The effects of the filler loading fraction and the filler size on the thermal conductivity of the composites were rationalized within the Kanari model. The obtained results are important for the optimization of graphene fillers for applications in thermal interface materials for heat removal from high-power-density electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Phonon linewidths in InAs/AlSb superlattices derived from first-principles—application towards quantum well hot carrier solar cells

Hot electrons generated by the absorption of high-energy photons typically thermalize by dissipating energy through phonon mediated relaxation pathways. Existence of non-equilibrium optical phonon populations (hot phonons) can suppress thermalization of electrons by facilitating a stable hot carrier population. In this work, we derive optical phonon scattering rates in InAs/AlSb superlattices using first-principles calculations and compare them with bulk InAs. Computations are performed for the two shortest period superlattices with equal widths of InAs and AlSb. While in pure InAs, the highest optical phonon scattering rates reach 5 cm -1 ; in the superlattice, the peak scattering rates of optical phonons with frequencies above the energy gap, are much smaller, reaching ~1 cm -1 . Finally, these lower scattering rates in the superlattice have important implications for design of high efficiency hot carrier solar cells and explain some of the robust hot carriers observed recently in InAs/AlAsSb quantum wells.

14 SOLAR ENERGY↗
DOE OSTI2023

Structure-thermal property relationships of aikinite PbCuBiS 3

Understanding the structural properties and chemical bonding in complex multinary chalcogenides is highly valuable, as it provides vital information for controlling their physical properties to suit various technological applications. Here, we report on the structural, thermal, and electronic properties of PbCuBiS 3 by incorporating an experimental and theoretical investigation of this material. Analysis of the experimental temperature-dependent heat capacity and thermal conductivity data show that weak bonding and strong lattice anharmonicity give rise to ultralow thermal conductivity. Chemical bonding information obtained from the density functional theory electronic calculations reveal significant antibonding interactions that underscore the dominant role of the Cu-S tetrahedra on occupied antibonding states, as well as a highly distorted Pb/Bi-S environment inducing weak bonding and strong lattice anharmonicity. This study broadens our understanding of the structure-property relationships for this material, and can be useful for developing this and similar chalcogenide materials for potential applications of interest.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Thermal transfer enhancement by hydrodynamic plasmons in electron bilayers

Here, we develop a theory of heat transfer induced by thermal charge fluctuations in two-dimensional electron double layers. We consider pristine systems comprised of identical layers and focus on the regime of sufficiently high temperatures and interlayer distances 𝑑, where the relevant charge fluctuations may be described using the hydrodynamic approach. In this limit heat transfer is dominated by the plasmon resonances. For systems with Galilean-invariant electron dispersion the interlayer thermal conductance 𝜘 is proportional to the kinematic viscosity of the electron liquid and decreases as 1/𝑑 4 . In the absence of Galilean invariance 𝜘∝𝜎/𝑑 3 , where 𝜎 is the intrinsic conductivity of the liquid. This strong enhancement can be traced to a drastically different broadening of plasmon resonances in systems with and without Galilean invariance.

2-dimensional systems↗
DOE OSTI2025

Mg vacancy and impurity-limited MgO single crystal thermal conductivity

Magnesium oxide (MgO) exhibits one of the highest thermal conductivities among oxides and is widely used as a dielectric material and substrate in semiconductor devices, in refractory applications, and as a promising filler in thermal interface materials for electronics. Its high thermal conductivity may be sensitive to impurity and defects, yet this influence is still uncertain. Here, in this study, the impact of the common impurities, i.e., Al, Ca, Ti, V, Fe, Si, B, Nb, Zr, Na, and K, as well as Mg and O vacancies on phonon scattering and thermal conductivity of MgO is studied using a fully first-principles T-matrix framework. It is found that B, Nb, and Zr impurities, along with Mg vacancies, lead to exceptionally strong reductions in thermal conductivity. By contrast, O vacancies and other impurities have modest to minimal impacts. Leveraging the T-matrix results, we reassess the perturbative, mass-only formalism whose use is pervasive in the literature and show that neglecting bond disorder does not necessarily lead to underestimation: for all transition-metal impurities studied, bond perturbations partially cancel mass disorder, causing the traditional perturbative model to overestimate scattering. We propose a simple modified perturbative expression that incorporates both mass and bond disorder and closely reproduces the T-matrix trends. Our predicted low-temperature trends by including phonon-impurity and phonon-boundary scattering match reasonably well with experiments. This work provides an in-depth study of impurity- and vacancy-limited thermal conductivity of MgO and suggests that reported “high-purity” MgO values have likely not yet reached the intrinsic upper limit, which may be substantially higher.

36 - MATERIALS SCIENCE↗
DOE OSTI2023

Integrated solid-state rapid thermo-cycling system

Techniques, systems, and devices are disclosed for implementing a portable lab system for PCR testing. An example method for operating an integrated thermal cycling system includes depositing samples into the integrated thermal cycling system that includes a thermal cycling device and an electronic interface. The thermal cycling device includes multiple wells to receive the samples to be thermally cycled, a thermoelectric cooling (TEC) element connected to the multiple wells, a substrate on which the TEC element is positioned, and a controller coupled to the TEC element. The multiple wells are positioned within the substrate that includes a thermally conductive ground positioned between adjacent wells. Supplying power to the integrated thermal cycling system, via the electronic interface, allows the multiple wells to exchange heat with the substrate and for each well to operate independently from other wells.

Beer, N. Reginald↗
DOE OSTI2022

Probing Electronic and Structural Transformations during Thermal Reduction of the Promising Water Splitting Perovskite BaCe 0.25 Mn 0.75 O 3

Here, in this report, we investigate the thermal reduction of the octahedral perovskite BaCe 0.25 Mn 0.75 O 3 (BCM) using in situ electron energy loss spectroscopy (EELS) in an aberration-corrected transmission electron microscope (TEM). The 12R-polytype of BCM is known to demonstrate high solar thermochemical hydrogen production capacity. In situ EELS measurements show that Mn is the active redox cation in BCM, undergoing thermal reduction from Mn 4+ to Mn 3+ during heating to 700 °C inside the TEM under a high vacuum. The progressive reduction of Mn 4+ during oxygen vacancy (O v ) formation was monitored as a function of temperature. Additionally, atomic-resolution scanning transmission electron microscopy identified two different types of twin boundaries present in the oxidized and reduced form of 12R-BCM, respectively. These two types of twin boundaries were shown, via computational modeling, to modulate the site-specific O v formation energies in 12R-BCM. It is concluded that these types of atomic defects provide sites more energetically favorable for O v formation during thermal reduction.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Influence of isoelectronic mass modulation on phonon decay and transport in layered pnictogen-carbon systems

This study systematically investigates the structural, electronic, and thermal transport properties of layered pnictogen–carbon (Pn 2 C 2 ; Pn = P, As, Sb, Bi) monolayers, revealing a profound influence of isoelectronic mass modulation on phonon dynamics and thermal conductivity. Through first-principles calculations and lattice dynamics analysis, we demonstrate that increasing the atomic mass of pnictogens leads to elongated Pn-C bonds, weakened interatomic interactions, and enhanced phonon-phonon scattering, resulting in a dramatic reduction in lattice thermal conductivity (κ). Specifically, κ decreases exponentially from 65.6 W/m-K in P 2 C 2 to an ultralow 0.37 W/m-K in Bi 2 C 2 , driven by suppressed acoustic-optical phonon gaps Δ$^{Γ}_{A-0}$, increased anharmonicity, and reduced phonon lifetimes and group velocities. The transition from semiconducting to metallic behavior in heavier pnictogen-based systems further enhances phonon-electron scattering, contributing to thermal conductivity suppression. Structural analysis highlights the strengthening of out-of-plane C—C bonds and the contraction of C—Pn—C bond angles, which disrupt in-plane phonon transport. Further, these findings establish a design framework for engineering ultralow-κ materials through chemical substitution and structural tuning, offering significant potential for thermoelectric and thermal management applications. This work provides fundamental insights into phonon decay mechanisms and thermal transport in 2D materials, paving the way for advanced phononic and energy-efficient devices.

2D materials↗
DOE OSTI2021

Production and Persistence of Extreme Two-temperature Plasmas in Radiative Relativistic Turbulence

Turbulence is a predominant process for energizing electrons and ions in collisionless astrophysical plasmas, and thus is responsible for shaping their radiative signatures (luminosity, spectra, and variability). To better understand the kinetic properties of a collisionless radiative plasma subject to externally driven turbulence, we investigate particle-in-cell simulations of relativistic plasma turbulence with external inverse Compton cooling acting on the electrons. We find that ions continuously heat up while electrons gradually cool down (due to the net effect of radiation), and hence the ion-to-electron temperature ratio T i /T e grows in time. Furthermore, we show that Ti/Te is limited only by the size and duration of the simulations (reaching ${T}_{i}/{T}_{e}\sim {10}^{3}$), indicating that there are no efficient collisionless mechanisms of electron–ion thermal coupling. This result has implications for models of radiatively inefficient accretion flows, such as observed in the Galactic center and in M87, for which so-called two-temperature plasmas with ${T}_{i}/{T}_{e}\gg 1$ have been invoked to explain their low luminosity. Additionally, we find that electrons acquire a quasi-thermal distribution (dictated by the competition of turbulent particle energization and radiative cooling), while ions undergo efficient nonthermal acceleration (acquiring a harder distribution than in equivalent nonradiative simulations). There is a modest nonthermal population of high-energy electrons that are beamed intermittently in space, time, and direction; these beamed electrons may explain rapid flares in certain high-energy astrophysical systems (e.g., in the Galactic center). These numerical results demonstrate that extreme two-temperature plasmas can be produced and maintained by relativistic radiative turbulence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗