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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Solar array switching power management

Solar array power switching concepts are explored for a 250 kWe manned LEO platform, a 50-250 kWe load for an orbit transfer vehicle (OTV), and an unmanned platform with a 50 kWe load in GEO. A solar array switching power management (SASPM) system is under study to satisfy the switching demands. Direct connections to arrays would be implemented for voltage regulations, power distribution, and the capability of reconfiguring the arrays to meet requirements. Mission characteristics that would require the power sources were explored. The LEO platform was projected to use a concentrator, have no reconfigurability, use 250 NiH2 batteries, supply 80-0 Vdc to an ion drive, and have a 20-30 yr life. Both GEO and OTV arrays were planar, would feature reconfigurability, and supply 800 Vdc to an ion drive. NiH2 batteries would be on the OTV, while the GEO spacecraft would use AgH2 cells. A block diagram of the basic switching configuration is presented.

Cassinelli, J. E.↗
NASA NTRS1983

Double-injection, deep-impurity switch development

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Selim, F. A.↗
NASA NTRS1983

Polymer thick-film conductors and dielectrics for membrane switches and flexible circuitry

The fabrication and operation of membrane switches are discussed. The membrane switch functions as a normally open, momentary contact, low-voltage pressure-sensitive device. Its design is a three-layer sandwich usually constructed of polyester film. Conductive patterns are deposited onto the inner side of top and bottom sheets by silk screening. The center spacer is then placed between the two circuit layers to form a sandwich, generally held together by an adhesive. When pressure is applied to the top layer, it flexes through the punched openings of the spacer to establish electrical contact between conductive pads of the upper and lower sheets, momentarily closing the circuit. Upon release of force the top sheet springs back to its normal open position. The membrane touch switch is being used in a rapidly expanding range of applications, including instrumentation, appliances, electronic games and keyboards. Its board acceptance results from its low cost, durability, ease of manufacture, cosmetic appeal and design flexibility. The principal electronic components in the membrane switch are the conductor and dielectric.

Nazarenko, N.↗
NASA NTRS1982

Study of solar array switching power management technology for space power system

This report documents work performed on the Solar Array Switching Power Management Study. Mission characteristics for three missions were defined to the depth necessary to determine their power management requirements. Solar array switching concepts were identified that could safisfy the mission requirements. These switching concepts were compared with a conventional buck regulator system on the basis of cost, weight and volume, reliability, efficiency and thermal control. For the missions reviewed, solar array switching provided significant advantages in all areas of comparison.

Cassinelli, J. E.↗
NASA NTRS1984

T/R switch design for short-range measurements, part 6.1A

The positive intrinsic negative (PIN) diode switch which is designed to protect the receiver from burnout or damage on transmission and channel the echo signal to the receiver on reception is outlined. The receiver must be protected firmly. A schematic diagram of a transformer rectifier (TR-ATR) switch for the Urbana Radar is shown. The T/R switch consists of a half wavelength coaxial cavity with tuning condenser and PIN diodes. Two UM4300 PIN diodes were mounted between the inner and outer conductor. The dc biasing voltage required for the PIN diodes is supplied by a control circuit. On transmission, the PIN diodes are forward biased to about 0.5 amperes. On reception, about 10 volts reverse voltage is applied to the diodes, which produces an initial reverse current to speed the recovery time. The T/R switch characteristics are estimated and the result of testing at different peak transmitter powers from 410 kW to 1500 kW is shown.

Yu, B.↗
NASA NTRS1985

Double-injection, deep-impurity switch development

The overall objective of this program was the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI) sup 2 silicon switch that operates in the 2-10 kV range with conduction current values of 5 A at 2 kV and 1 A at 10 kV. Other major specifications include a holding voltage of 10 V with no gate current, 10 microsec switching time, and power dissipation of 50 W at 75 C. It was decided to concentrate on the lateral circular devices in order to optimize the gold diffusion. This resulted in devices that are much better switches (approx.1 micro sec switching time), and in a gold diffusion process that is much more controllable than those previously developed. Some results with injection-gated devices were also obtained. The current conduction for V less than VT was analyzed and seen to agree, for the most part, with Lampert's theory. Various sections of this report describe the device designs, wafer-processing techniques, and various measurements which include ac and dc characteristics and four-point probe.

Whitson, D. W.↗
NASA NTRS1986

Spacecraft solid state power distribution switch

As a spacecraft performs its mission, various loads are connected to the spacecraft power bus in response to commands from an on board computer, a function called power distribution. For the Mariner Mark II set of planetary missions, the power bus is 30 volts dc and when loads are connected or disconnected, both the bus and power return side must be switched. In addition, the power distribution function must be immune to single point failures and, when power is first applied, all switches must be in a known state. Traditionally, these requirements have been met by electromechanical latching relays. This paper describes a solid state switch which not only satisfies the requirements but incorporates several additional features including soft turn on, programmable current trip point with noise immunity, instantaneous current limiting, and direct telemetry of load currents and switch status. A breadboard of the design has been constructed and some initial test results are included.

Praver, G. A.↗
NASA NTRS1987

A long life plasma switch for space applications

The use of a novel plasma switch based on the inverse-pinch mechanism can reduce local current density over spacecraft power system electrodes, thereby minimizing damage to the insulator. The current density involved is 2 orders of magnitude smaller than that of the z-pinched current in a spark-gap switch; local heating is therefore about 4 orders of magnitude less than that to the electrodes of the spark-gap switch. Over 2000 tests of the plasma switch have been conducted for a forward current of more than 1 MA and up to 20 kV holdoff voltage.

Choi, Sang H.↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
NASA NTRS1989

Optical backplane interconnect switch for data processors and computers

An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

Hendricks, Herbert D.↗
NASA NTRS1990

Plasma puff initiation of high Coulomb transfer switches

The plasma-puff triggering mechanism based on a hypocycloidal pinch geometry was investigated to determine the optimal operating conditions for the azimuthally uniform surface flashover which initiates plasma-puff under wide range of fill gas pressure of Ar, He and N2. The optimal fill gas pressure for the azimuthally uniform plasma-puff was about 120 mTorr and 450 Torr for He and N2, and between 120 mTorr and 5 Torr for Ar. The inverse pinch switch was triggered with the plasma-puff and the switching capability under various electrical parameters and working gas pressures of Ar, He and N2 was determined. It was also shown that the azimuthally uniform switching discharges were dependent on the type of fill gas and its fill pressure. A new concept of plasma-focus driven plasma-puff was also discussed in comparison with the hypocycloidal pinch plasma-puff triggering. The main discharge of inverse pinch switch with plasma-focus driven plasma-puff trigger is found to be more azimuthally uniform than that with hypocycloidal pinch plasma-puff trigger in a gas pressure region between 80 mTorr and 1 Torr.

Venable, D. D.↗
NASA NTRS1990

Hydrogen masers with cavity frequency switching servos

The stability of the free-running hydrogen maser is limited by pulling of the unperturbed hydrogen transition frequency due to instability of the cavity resonance frequency. While automatic spin-exchange tuning is in principle the more basic and accurate method, the required beam intensity switching and the long servo time constant result in reduced stability for measuring intervals up to 10(exp 6) seconds. More importantly, the spin-exchange tuning method requires a second stable frequency source as a reference, ideally a second hydrogen maser, to get the best results. The cavity frequency switching servo, on the other hand, has very little effect on the maser short term stability, and is fast enough to correct for cavity drift while maintaining the cavity at the spin-exchange tuned offset required to minimize instability due to beam intensity fluctuations. Not only does the cavity frequency switching servo not require a second stable frequency source, but the frequency reference is the atomic hydrogen radiated beam signal, so that no extra RF connections need be made to the cavity, and externally generated signals that would perturb the hydrogen atom need not be transmitted through the cavity. The operation of the cavity frequency switching stabilization method is discussed and the transient response of the servo and certain other aspects of the technique that have potential for achieving improved basic accuracy are illustrated.

Peters, Harry E.↗
NASA NTRS1989

Development of flashlamp-pumped Q-switched Ho:Tm:Cr:YAG lasers for mid-infrared LIDAR application

A flashlamp-pumped 2.1 micron Ho:Tm:Cr:YAG laser was studied for both normal mode and Q-switched operations under a wide variety of experimental conditions in order to optimize performance. Laser output energy, slope efficiency, threshold and pulselength were determined as a function of operating temperature, output mirror reflectivity, input electrical energy and Q-switch opening time. The measured normal-mode laser thresholds of a Ho(3+) (0.45 atomic percent):Tm(3+) (2.5 atomic percent):Cr(3+) (0.8 atomic percent):YAG crystal ranged form 26 to 50 J between 120 and 200 K with slope efficiencies up to 0.36 percent with a 60 percent reflective output mirror. Under Q-switched operation the slope efficiency was 90 percent of the normal-mode result. Development of solid state lasers with Ho(3+), Tm(3+) and/or Er(3+) doped crystals has been pursued by NASA for eye-dafe mid-infrared LIDAR (light detection and ranging) application. As a part of the project, the authors have been working on evaluating Ho(3+):Tm(3+):Cr(3+):YAG crystals for normal-mode and Q-switched 2.1 micron laser operations in order to determine an optimum Tm(3+) concentration under flashlamp pumping conditions. Lasing properties of the Ho(3+) in the mid-infrared region have been studied by many research groups since the early 1960's. However, the technology of those lasers is still premature for lidar application. In order to overcome the inefficiency related to narrow absorption bands of the Ho(3+), Tm(3+) and Er(3+), the erbium has been replaced by chromium. The improvement in flashlamp-pumped Ho(3+) laser efficiency has been demonstrated recently by several research groups by utilizing the broad absorption spectrum of Cr(3+) which covers the flashlamp's emission spectrum. Efficient energy transfer to the Tm(3+) and then the Ho(3+) occurs subsequently. It is known that high Tm(3+) concentration and low Ho(3+) concentration are preferred to achieve a quantum efficiency approaching two and to avoid large reabsorption losses. However, determination of the optimum Tm(3+) concentration required to ensure efficient energy transfer from Cr(3+) to Tm(3+) and from Tm(3+) to Ho(3+) has not been made in the Ho:Tm:CR:YAG crystal. The results obtained so far are given.

Choi, Young S.↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
NASA NTRS1992

Modification Of A Communication Switch In A Helicopter

Report describes preliminary study of modification of electronic circuitry connected to communication-channel-selecting switches in AH-1 Cobra helicopter. Switches in question are foot switch and cyclic thumb-wheel switch mounted on joystick flight control. Modification enables pilots and other crewmembers to select radio channels or intercommunication with less diversion of attention from flight control and other critical tasks. Intended to enhance safety and performance in critical situations.

Haworth, Loran↗
NASA NTRS1991

Architecture, performance, and implementation of the tandem banyan fast packet switch

The authors propose a space-division fast packet switch architecture based on banyan interconnection networks, called the tandem banyan switching fabric. It consists of placing banyan networks in tandem, offering multiple paths from each input to each output, thus overcoming in a very simple way the effect of conflicts among packets (to which banyan networks are prone) and achieving output buffering. From a hardware implementation perspective, this architecture is simple in that it consists of several instances of only two VLSI chips, one implementing the banyan network and the other implementing the output buffer function. The basic structure and operation of the tandem banyan switching fabric are described, and its performance is discussed. The authors propose a modification to the basic structure which decreases the hardware complexity of the switch while maintaining its performance. An implementation of the banyan network using a high-performance BiCMOS sea-of-gates on 0.8-micron technology is reported.

Tobagi, Fouad A.↗
NASA NTRS1993

Cascaded transformerless DC-DC voltage amplifier with optically isolated switching devices

A very high voltage amplifier is provided in which plural cascaded banks of capacitors are switched by optically isolated control switches so as to be charged in parallel from the preceding stage or capacitor bank and to discharge in series to the succeeding stage or capacitor bank in alternating control cycles. The optically isolated control switches are controlled by a logic controller whose power supply is virtually immune to interference from the very high voltage output of the amplifier by the optical isolation provided by the switches, so that a very high voltage amplification ratio may be attained using many capacitor banks in cascade.

Sridharan, Govind↗
NASA NTRS1994

Improved Electro-Optical Switches

Improved single-pole, double-throw electro-optical switches operate in switching times less than microsecond developed for applications as optical communication systems and networks of optical sensors. Contain no moving parts. In comparison with some prior electro-optical switches, these are simpler and operate with smaller optical losses. Beam of light switched from one output path to other by applying, to electro-optical crystal, voltage causing polarization of beam of light to change from vertical to horizontal.

Nelson, Bruce N.↗