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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Hybrid Organic Inorganic Perovskites: Physical Properties and Applications (in 4 Volumes)

This four-volume handbook gives a state-of-the-art overview of hybrid organic inorganic perovskites, both two dimensional (2D) and three dimensional (3D), from synthesis and characterization and simulation to optoelectronic devices (such as solar cells and light emitting diodes), spintronics devices and catalysis application. The editors, coming from academia and national laboratory, are known for their didactic skills as well as their technical expertise. Coordinating the efforts of 30 expert authors in 21 chapters, they construct the story of hybrid perovskite structural and optical properties, electronic and spintronic response, laser action, and catalysis from varied viewpoints: materials science, chemical engineering, and energy engineering. The four volumes are arranged according to the focus material properties. Volume 1 is focused on the material physical properties including structure, deposition characteristic and the structure of the electronic bands and excitons of these compounds. Volume 2 covers the hybrid perovskite optical properties including the ultrafast optical response, photoluminescence and laser action. Volume 3 contains the spin response of these compounds including application such as spin valves, photogalvanic effect, and magnetic response of light emitting diodes and solar cell devices. Finally, and highly relevant to tomorrow's energy challenges, volume 4 is focused on the physics and device properties of the most relevant applications of the hybrid perovskites, namely photovoltaic solar cells. The text contains many high-quality colorful illustrations and examples, as well as thousands of up-to-date references to peer-reviewed articles, reports and websites for further reading. This comprehensive and well-written handbook is a must-have reference for universities, research groups and companies working with the hybrid organic inorganic perovskites.

applications↗
DOE OSTI2021

Spin Berry points as crucial for ultrafast demagnetization

Laser-induced ultrafast demagnetization has puzzled researchers around the world for over two decades. Intrinsic complexity in electronic, magnetic and phononic subsystems is difficult to understand microscopically. So far, it is not possible to explain demagnetization using a single mechanism, which suggests a crucial piece of information still missing. In this paper, we return to a fundamental aspect of physics: spin and its change within each band in the entire Brillouin zone. We employ face-centered cubic (fcc) Ni as an example and use an extremely dense k mesh to map out spin changes for every band close to the Fermi level along all the high symmetry lines. To our surprise, spin angular momentum at some special k points abruptly changes from [Formula: see text] to [Formula: see text] simply by moving from one crystal momentum point to the next. This explains why intraband transitions, which the spin superdiffusion model is based upon, can induce a sharp spin moment reduction, and why electric current can change spin orientation in spintronics. These special k points, which are called spin Berry points [M. V. Berry, Proc. R. Soc. Lond. A 393 (1984) 45], are not random and appear when several bands are close to each other, so the Berry potential of spin majority states is different from that of spin minority states. Although within a single band, spin Berry points jump, when we group several neighboring bands together, they form distinctive smooth spin Berry lines. It is the band structure that disrupts those lines. Spin Berry points are crucial to laser-induced ultrafast demagnetization and spintronics.

Physics↗
DOE OSTI2020

Time-Resolved Spectroscopy of Insulator-Metal Transitions: Exploring Low-Energy Dynamics in Strongly Correlated Systems. Final Report

Transition metal oxides (TMOs) have attracted much attention in recent years. The strong coupling between charge, spin, and orbital degrees of freedom creates novel functional properties. The research at the interplay between ferromagnetism, ferroelectricity and conductivity provides a promising way to the development of future spintronic devices. The interface characterization of multifunctional oxide heterostructures is crucial to understand deeply the magnetic response, spin injection and spin transport. In year one, we characterized optically the magnetic property with the method of magnetization-induced second-harmonic generation (MSHG), which is a sensitive technique to selectively probe the interface where the spatial inversion symmetry is broken. The interface of n-type BaTiO 3 (BTO)/La 0.67 Sr 0.33 MnO 3 (LSMO) forms a Schottky barrier and displays a good diode effect. By applying an external electric field across the sample, we observe the magnetoelectric (ME) coupling effect to modulate the interface magnetization. The voltage dependent magnetic contrast sharply vanishes at positive voltage (applied to LSMO contact) and reveals a ferromagnetic (FM)-to- antiferromagnetic (AFM) transition occurring at the interface, while the magneto-optic Kerr effect (MOKE) indicates that the bulk property is not affected. The strain mediated mechanism and ferroelectric (FE) polarization induced charge medicated mechanism are both discussed, but they do not play an important role in the observed magnetization transition. A new mechanism is proposed - the injected minority spins through strong Hund's interaction with the local magnetic moments at positive voltage weaken the double-exchange interaction of nearby Mn e g electrons, thereby reducing the ferromagnetic (FM) ordering. The dominant superexchange interaction of localized t 2g electrons finally leads to the AFM configuration. By reducing the electron carrier concentration of BTO, a positive voltage shift of the transition is observed. The oxygen richer sample with lower carrier concentration requires a higher voltage to increase the hole doping level of LSMO to induce the interfacial AFM phase. By inserting a thin (1nm) La 0.5 Ca 0.5 MnO 3 layer between BTO and LSMO, the interface magnetic response from LSMO is enhanced. In year two, a non-multiferroic heterostructure SrTiO 3 (STO)/ La 0.5 Ca 0.5 MnO 3 (LCMO)/La 0.67 Sr 0.33 MnO 3 (LSMO) was studied. In this system, the interface FM-AFM transition is observed at negative voltage. The STO layer may act as a hole-donating layer, which induces the hole transfer to LSMO making it overdoped, while the LCMO interlayer at the 0.5 hole doping level displays complicated CE type AFM phase. Thus the AFM phase is dominant at the interface and electron accumulation is required to induce the FM phase by applying a negative voltage. For oxygen rich sample, the magnetic MSHG loop reappears at high positive voltage (around +2.5 V). At high doping level (x > 0.5), LSMO exhibits A-type AFM order, consisting of AFM superexchange coupling between adjacent layers and intralayer FM double-exchange coupling. The less tensile strain of STO and LSMO due to a smaller lattice mismatch as compared to BTO would result in a weaker interlayer coupling . Thus, interfacial A-type AFM order can occur in STO/LCMO/LSMO heterostructure at high hole doping concentration. The study of ME coupling of multifunctional oxide heterostructures is definitely important to the development and performance of future spintronic devices. The results presented here regarding the interfacial magnetic transition controlled by an external electric field offer some new perspective to study the spin transport of magnetic tunnel junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhanced Magnetism and Anomalous Hall Transport through Two-Dimensional Tungsten Disulfide Interfaces

The magnetic proximity effect (MPE) has recently been explored to manipulate interfacial properties of two-dimensional (2D) transition metal dichalcogenide (TMD)/ferromagnet heterostructures for use in spintronics and valleytronics. However, a full understanding of the MPE and its temperature and magnetic field evolution in these systems is lacking. In this study, the MPE has been probed in Pt/WS 2 /BPIO (biphase iron oxide, Fe 3 O 4 and α-Fe 2 O 3 ) heterostructures through a comprehensive investigation of their magnetic and transport properties using magnetometry, four-probe resistivity, and anomalous Hall effect (AHE) measurements. Density functional theory (DFT) calculations are performed to complement the experimental findings. We found that the presence of monolayer WS 2 flakes reduces the magnetization of BPIO and hence the total magnetization of Pt/WS 2 /BPIO at T > ~120 K—the Verwey transition temperature of Fe 3 O 4 (T V ). However, an enhanced magnetization is achieved at T < T V . In the latter case, a comparative analysis of the transport properties of Pt/WS 2 /BPIO and Pt/BPIO from AHE measurements reveals ferromagnetic coupling at the WS 2 /BPIO interface. Our study forms the foundation for understanding MPE-mediated interfacial properties and paves a new pathway for designing 2D TMD/magnet heterostructures for applications in spintronics, opto-spincaloritronics, and valleytronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Efficient Optical Control of Magnon Dynamics in van der Waals Ferromagnets

Optical control of magnons in two-dimensional (2D) materials promises new functionalities for spintronics and magnonics in atomically thin devices. Here, we report control of magnon dynamics, using laser polarization, in a ferromagnetic van der Waals (vdW) material, Fe 3.6 Co 1.4 GeTe 2 . The magnon amplitude, frequency, and lifetime are controlled and monitored by time-resolved pump-probe spectroscopy. We show substantial (over 25%) and continuous modulation of magnon dynamics as a function of incident laser polarization. Our results suggest that the modification of the effective demagnetization field and magnetic anisotropy by the pump laser pulses with different polarizations is due to anisotropic optical absorption. This implies that pump laser pulses modify the local spin environment, which enables the launch of magnons with tunable dynamics. Our first-principles calculations confirm the anisotropic optical absorption of different crystal orientations. Our findings suggest a new route for the development of opto-spintronic or opto-magnonic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultralow Voltage Manipulation of Ferromagnetism

Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 µJ cm -2 switching operation. In this paper, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO 3 to scale the switching energy density to ≈10 µJ cm -2 . This work provides a template to achieve attojoule-class nonvolatile memories.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy

Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries great potential for next-generation computing applications. Here we report the observation of rich spin-orbit torque switching phenomena such as field-free switching, multistate switching, memristor behavior and ratchet effect in a single shot, co-sputtered, rare earth-transition metal Gd x Co 100-x . Notably such effects have only been observed in antiferromagnet/ferromagnet bi-layer systems previously. We show that these effects can be traced to a large anistropic canting, that can be engineered into the Gd x Co 100-x system. Further, we show that the magnitude of these switching phenomena can be tuned by the canting angle and the in-plane external field. The complex spin-orbit torque switching observed in canted Gd x Co 100-x not only provides a platform for spintronics but also serves as a model system to study the underlying physics of complex magnetic textures and interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Observing differential spin currents by resonant inelastic X-ray scattering

Controlling spin currents, that is, the flow of spin angular momentum, in small magnetic devices, is the principal objective of spin electronics, a main contender for future energy-efficient information technologies. A pure spin current has never been measured directly because the associated electric stray fields and/or shifts in the non-equilibrium spin-dependent distribution functions are too small for conventional experimental detection methods optimized for charge transport. Here we report that resonant inelastic X-ray scattering (RIXS) can bridge this gap by measuring the spin current carried by magnons—the quanta of the spin wave excitations of the magnetic order—in the presence of temperature gradients across a magnetic insulator. This is possible due to the sensitivity of the momentum- and energy-resolved RIXS intensity to minute changes in the magnon distribution under non-equilibrium conditions. Furthermore, we use the Boltzmann equation in the relaxation time approximation to extract transport parameters, such as the magnon lifetime at finite momentum, essential for the realization of magnon spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗
DOE OSTI2020

Enhancement of the spin–orbit torque efficiency in W/Cu/CoFeB heterostructures via interface engineering

Here, the spin-torque ferromagnetic resonance signal and the spin Hall magnetoresistance induced by the spin Hall effect of W/Cu/CoFeB heterostructures with different Cu layer thicknesses (t Cu ) have been systemically studied. The effective spin mixing conductance $g^{↑↓}_{eff}$, the interfacial spin transparency T, and the real spin–orbit torque efficiency ( J s J c ) real show a significant increase compared to the W/CoFeB heterostructure. ( J s J c ) real reaches its maximum of ~0.54, increased up to ~50% at the optimized tCu ~ 0.52 nm according to our theoretical prediction. More importantly, the intrinsic spin Hall angle of W, $θ^{int}_{SH}$ ~ 0.79 ± 0.20, has also been obtained after the correction of the inverse spin Hall effect and T. This suggests that the Cu insertion improves the interface quality and, therefore, assists the spin transport in the heterostructures, which potentially improves the performance of next-generation spintronic devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Design of a Stable Heusler Alloy with Switchable Metal-to-Half-Metal Transition at Finite Temperature

We report the electronic structure and metallicity of Si-doped Mn2VGe Heusler alloys within the first-principles density-functional theory framework are discussed. Mn2VGe is found to assume two stable structures at (cubic) lattice constants of 5.7 and 6.05 Å, which are well-separated in energy and correspond to half-metallic (low-spin) and metallic (high-spin) phases, respectively. Substitution of Ge by Si reduces the energy difference between these two phases, which become nearly degenerate at an Si concentration of ≈3.125 at% at zero temperature. The analysis shows that the switching between the high- and low-spin phases for this composition can be triggered via a pressure of 2.8 GPa at 300 K. Si-doped Mn 2 VGe can thus provide an ultrafast, low power, cost-effective materials platform for spintronics applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer

Fast spin manipulation in magnetic heterostructures, where magnetic interactions between different materials often define the functionality of devices, is a key issue in the development of ultrafast spintronics. Although recently developed optical approaches such as ultrafast spin-transfer and spin–orbit torques open new pathways to fast spin manipulation, these processes do not fully utilize the unique possibilities offered by interfacial magnetic coupling effects in ferromagnetic multilayer systems. Here, ultrafast optically controlled interfacial exchange interactions in the ferromagnetic Co 2 FeAl/(Ga,Mn)As system at low laser fluence levels are experimentally demonstrated. The excitation efficiency of Co 2 FeAl with the (Ga,Mn)As layer is 30–40 times higher than the case with the GaAs layer at 5 K due to the modification of exchange coupling interaction via photoexcited charge transfer between the two ferromagnetic layers. In addition, the coherent spin precessions persist to room temperature, excluding the drive of pump-modulated magnetization in the (Ga,Mn)As layer and indicating a proximity-effect-related optical excitation mechanism. The results highlight the importance of interfacial exchange interactions in ferromagnetic heterostructures and how these magnetic coupling effects can be utilized for ultrafast, low-power spin manipulation.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Metalloborophenes: Structural Diversity and Emerging Properties of Metal–Boron Two‐Dimensional Frameworks

Metalloborophenes, an emerging subclass of 2D materials, have attracted growing attention owing to their exceptional structural diversity and highly tunable electronic and magnetic properties. Constructed from vacancy‐rich borophene frameworks stabilized by electron donation from incorporated metal atoms, metalloborophenes merge the chemical versatility of boron with the functional richness of metal dopants. The first experimental realization of Cu–borophene nanoribbons in 2024 marked a pivotal advance, confirming long‐standing theoretical predictions and revitalizing interest in this new frontier of boron‐based 2D chemistry. Despite this progress, most studies to date remain conceptual and theoretical, constrained by challenges in scalable synthesis, dopant precision, and substrate control. Computational investigations have revealed a broad landscape of stable metalloborophene structures, exhibiting metallic, semiconducting, and magnetic behavior across diverse dopant families, including alkali, alkaline‐earth, transition, and lanthanide elements. These tunable characteristics open promising avenues for applications in spintronics, catalysis, and hydrogen storage. This review provides a comprehensive overview of metalloborophenes, emphasizing the interplay between structure, stability, and functionality, and outlining future directions toward bridging predictive modeling with experimental realization of this rapidly evolving class of 2D materials.

2D materials↗
DOE OSTI2023

Exceptional magnetic and magnetoelastic behavior of rare-earth non-centrosymmetric Sm 7 Pd 3

Magnetic compounds possessing an intrinsic combination of near-zero magnetization with high magnetic anisotropy are highly desirable for spinronic applications and memory recording. A comprehensive study of Sm 7 Pd 3 binary compound uncovered a unique combination of strong magnetoelastic behavior, very low net magnetization, and exceptionally high magnetic coercivity. The temperature-dependent X-ray synchrotron powder diffraction study indicates the abrupt changes in the compound's lattice parameters at the magnetic ordering temperature of T C =169 K, although the crystal structure remains non-centrosymmetric hexagonal Th 7 Fe 3 -type down to 6 K. Density functional theory calculations confirm high intrinsic magnetocrystalline anisotropy of Sm 7 Pd 3 , which explains the extremely large coercivity of the polycrystalline sample, up to H cr = 130 kOe at 2 K. In conclusion, this discovery brings to life a novel class of highly anisotropic materials that are distinctly different from known spintronic materials, making them interesting future systems for magnetic memory research.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Controlling spin-orbit coupling strength of bulk transition metal dichalcogenide semiconductors

Transition metal dichalcogenide (TMD) semiconductors are attracting much attention in research regarding device physics based on their unique properties that can be utilized in spintronics and valleytronics. Although current studies concentrate on the monolayer form due to the explicitly broken inversion symmetry and the direct band gap, bulk materials also hold the capability of carrying spin and valley current. In this study, we report the methodology to continuously control the spin-orbit coupling (SOC) strength of bulk TMDs Mo 1-x W x Se 2 by changing the atomic ratio between Mo and W. The results show the size of band splitting at the K valley the measure of the coupling strength is linearly proportional to the atomic ratio of Mo and W. Here, our results thus demonstrate how to precisely tune the SOC coupling strength, and the collected information of which can serve as a reference for future applications of bulk TMDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Exchange bias and interface-related effects in two-dimensional van der Waals magnetic heterostructures: Open questions and perspectives

The exchange bias (EB) effect is known as a fundamentally and technologically important magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a magnetic hysteresis loop of a film subject to cooling in the presence of a magnetic field. The EB effect in van der Waals (vdW) heterostructures offers a novel approach for tuning the magnetic properties of the newly discovered single-layer magnets, as well as adds a new impetus to magnetic vdW heterostructures. Indeed, intriguing EB effects have recently been reported in a variety of low-dimensional vdW magnetic systems ranging from a weakly interlayer-coupled vdW magnet (e.g., Fe 3 GeTe 2 ) to a bilayer composed of two different magnetic vdW materials (e.g., Fe 3 GeTe 2 /CrCl 3 , Fe 3 GeTe 2 /FePS 3 , Fe 3 GeTe 2 /MnPS 3 , Fe 3 GeTe 2 /CrSe, Fe 3 GeTe 2 /CrOCl, Fe 3 GeTe 2 /CoPc, Fe 5 GeTe 2 /FePS 3 ), to bilayers of two different vdW defective magnets (e.g., VSe 2 /MoS 2 ), or to metallic ferromagnet/vdW defective magnet interfaces (e.g., Fe/MoS 2 ). Despite their huge potential in spintronic device applications, the physical origins of the observed EB effects have remained elusive to researchers. Here, we present here a critical review of the EB effect and associated phenomena such as magnetic proximity (MP) in various vdW heterostructure systems and propose approaches to addressing some of the emerging fundamental questions.

2D magnets↗
DOE OSTI2025

Epitaxial columnar growth of strain-free antiferromagnetic Weyl semimetal Mn 3 Sn on wurtzite c -plane GaN/Al 2 O 3 (0001)

Weyl semimetal thin films with excellent crystalline quality are of great interest for antiferromagnetic spintronics. Mn 3 Sn is one Weyl semimetal with great properties and promise for exciting science and applications. It has proven very challenging, however, to grow Mn 3 Sn thin films with smooth surfaces, negligible strain, and excellent crystallinity. In this work, we discuss the successful preparation of epitaxial Mn 3 Sn (0001)-oriented thin films via molecular beam epitaxial growth on c -plane wurtzite GaN which was grown by MBE on Al 2 O 3 (0001). We present the reflection high energy electron diffraction analysis along with x-ray diffraction in order to demonstrate the crystalline quality of the film, and we give atomic models to explain the epitaxial orientation relationships between the crystal lattices of the substrate, GaN layer, and Mn 3 Sn layer. Importantly, we discuss the film lattice parameters as compared to expected values, demonstrating negligible strain both in-plane and out-of-plane . Atomic force microscopy reveals an epitaxial columnar growth mode characterized by flat-top-mesa islands, while scanning tunneling microscopy shows the atomically smooth surfaces of the mesa-top structures. Finally, Rutherford backscattering informs the stoichiometry of the film as well as the layer thicknesses.

Chiral antiferromagnetic material↗
DOE OSTI2021

Electronic, magnetic, and optical properties of bulk and (1 1 1)-surfaces of CoMnZnSi quaternary Heusler alloy

The structural stability, electronic structure, and magnetic and optical properties of CoMnZnSi quaternary Heusler alloy (QHA) in the bulk and (1 1 1)-slab forms have been investigated by performing density functional theory (DFT) calculations. Formation and cohesive energies, and elastic constants confirm that the bulk CoMnZnSi is chemically and mechanically stable at an equilibrium lattice parameter of 5.81 Å. The calculated elastic constants also indicate that this QHA has ductile and anisotropic features. We investigate and discuss the bonding behavior from charge density distribution and density of states. Furthermore, these calculations in the bulk phase show a perfect half-metallic behavior with an integer value of magnetic moment (4 µB) and a large spin-flip gap of 0.39 eV. On the other hand, the Co (1 1 1) and Si (1 1 1)-slabs exhibit semi-metallic nature at the Fermi level. These results indicate that CoMnZnSi qualifies for spintronic applications. In the bulk and Co (1 1 1), Zn (1 1 1), and Si (1 1 1)-surfaces, the magnetic moment of Co and Mn atoms are ferromagnetically aligned, while the ferrimagnetic alignment of Co with Mn has been found in Mn (1 1 1)-surface. We also investigate the optimal conductivity, dielectric functions, reflectivity, absorption coefficient, refractive index, and loss function to understand the underlying optical properties of this alloy.

36 MATERIALS SCIENCE↗