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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12

Insights on the cycling behavior of a highly-prelithiated silicon–graphite electrode in lithium-ion cells

Nanosized silicon materials are being developed for use in the anodes of high-energy lithium-ion batteries. However, the high surface areas of these materials increase the rate of parasitic reactions in the electrode, which consume cyclable Li + and degrade battery performance. Prelithiation offers a realistic strategy to compensate for this reactivity, by injecting additional charge into the cell to counterbalance the Li + loss. Interestingly, the benefits offered by prelithiation extend beyond its more obvious purpose. Here, by using a reference electrode in NMC532//Si–Gr cells, we show how prelithiation alters the cycling potentials experienced by the Si-containing anode and how that translates into gains in cycle life. The rate of consumption of the prelithiated charge is lower than that expected from the behavior of non-prelithiated cells. Curiously, the Si particles become partially unresponsive during the C/3 cycling apparently because of kinetic constraints. Electrochemical studies on harvested electrodes in half-cells show that capacities are intact after the long-term cycling and that most of the lithium reservoir is still present in the anode. We conclude that the high capacity retention displayed by the prelithiated cells mainly results from a higher participation of graphite particles during the extended electrochemical cycling.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (E t ) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

bulk lifetime↗

NED_Asteroid_Energy_Deposition

In the event of a potentially catastrophic asteroid impact, with sufficient warning time, deploying a nuclear device remains a powerful option for planetary defense if a kinetic impactor proves insufficient. Predicting the effectiveness of a potential nuclear deflection or disruption mission depends on accurate multiphysics simulations of the device's x-ray energy deposition into the asteroid and the resulting material ablation. These simulations span many orders of magnitude, require a variety of different complex physics packages, and are computationally expensive. Having an efficient and accurate way of modeling this system is necessary for exploring a mission's sensitivity to the asteroid's range of physical properties. To expedite future simulations, we present a completed x-ray energy deposition model developed using the radiation-hydrodynamics code Kull which can be used to initiate a nuclear mitigation mission hydrocode. The model spans a wide variety of possible mission initial conditions: four different asteroid-like materials (Silicon Dioxide, Forsterite, Iron, and Ice), two different source spectra (1 and 2 keV blackbodies), and then a broad range of radiation fluences (0.0001 to 1 kt per square meter), source durations (10 to 100 ns), and asteroid porosities (0 to 80 percent). Using blowoff momentum as the primary metric, the modelinitiated simulation results match the full radiation-hydrodynamics results to within 10 percent. Please reference the journal article: Burkey et al., X-Ray Energy Deposition Model for Simulating Asteroid Response to a Nuclear Planetary Defense Mitigation Mission, Planetary Science Journal, (2023) for more information.

Managan, RobertA↗

Space processing float zone thermal analysis

Thermal analysis (BETA) computer program adaptations were prepared to analyze phase change histories in crystal specimens. The first program (BETA-CYL) treats right circular cylinder configurations and the second, more general, program (BETA-BOR) treats a generalized body-of-revolution configuration. A series of computer runs were made for silicon material to determine boundary conditions which produce flat solidification interfaces while, at the same time, minimizing peak temperatures in the molten zone. Flat solidification interfaces are a goal believed by some investigators to be required to produce high quality semiconductor materials. The thermal effects of convection in a molten zone were examined and found to be negligible in comparison to the conduction heat transfer of the melt.

Pogson, J. T.↗

Cure-rate data for silicone adhesive

Report describes work with concentrations down to 0.07 percent and is useful when applying adhesives in terrestrial and space applications. Cured Silicone retains low-outgassing properties as well as its snap, elongation, and resilience. Tests for hardness of silicone material also showed good results. No gross hysteresis observable on recovery from stretching nor was there any decrease in hardness.

Clatterbuck, C.↗

Simulated hail impact testing of photovoltaic solar panels

Techniques used to simulate and study the effect of hail on photovoltaic solar panels are described. Simulated hail stones (frozen ice spheres projected at terminal velocity) or steel balls were applied by air guns, gravity drop, or static loading. Tests with simulated hail and steel balls yielded different results. The impact strength of 10 commercially available flat-plate photovoltaic modules was tested. It was found that none of the six panel designs incorporating clear potting silicone material as the outermost layer remained undamaged by 1-in. simulated hailstones, while a photovoltaic module equipped with a 0.188-in.-thick acrylic cover sheet would be able to withstand the impact of a 2-in.-diameter hailstone.

Moore, D.↗

Advanced ceramic material for high temperature turbine tip seals

Forty-one material systems were evaluated for potential use in turbine blade tip seal applications at 1370 C. Both ceramic blade tip inserts and abradable ceramic tip shoes were tested. Hot gas erosion, impact resistance, thermal stability, and dynamic rub performance were the criteria used in rating the various materials. Silicon carbide and silicon nitride were used, both as blade tips and abradables. The blade tip inserts were fabricated by hot pressing while low density and honeycomb abradables were sintered or reaction bonded.

Vogan, J. W.↗

The charge injection device /CID/ as a stellar tracking sensor

A 128 x 128 element CID imager was operated in a simulated stellar trackling environment and evaluated for temporal and pattern noise and spectral response over a temperature range of -40 C to +25 C. The test devices were fabricated on long-lifetime bulk silicon material and utilized very thin upper-level polysilicon electrodes for enhanced spectral response. A standard microcomputer was used to generate all control signals and to collect and process performance data. The results of this program were used to predict the performance of a 400 x 400 CID array designed specifically for stellar-tracking.

Burke, H. K.↗

Heat-Exchanger Method of Crystal Growth

Large crystals of silicon are grown from melt, in either vacuum or pressurized atmosphere, without moving crucible, furnace, or anything else. Seed crystal is mounted on helium-cooled heat exchanger, which prevents seed from melting when furnace melts rest of silicon material in crucible; heat exchanger draws off heat from melt so that a solid ingot grows outward from seed in a regular crystal structure. Bottom of crucible is insulated so that heat exchanger cools only seed.

Khattak, C. P.↗

Novel duplex vapor-electrochemical method for silicon solar cells

A process was developed for the economic production of high purity Si from inexpensive reactants, based on the Na reduction of SiF4 gas. The products of reaction (NaF, Si) are separated by either aqueous leaching or by direct melting of the NaF-Si product mixture. Impurities known to degrade solar cell performance are all present at sufficiently low concentrations so that melt solidification (e.g., Czochralski) will provide a silicon material suitable for solar cells.

Nanis, L.↗

Low-cost ion implantation and annealing technology for solar cells

Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

Kirkpatrick, A. H.↗

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures

The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films on low density substrate materials (silicon, glass, plastics). A graphoepitaxy technique was developed which uses fine geometric patterns in the substrate to affect growth. Initial substrates were processed by etching 25 microns deep grooves into 100 oriented wafers; fine-grained polycrystalline GaAs layers 25-50 microns thick were then deposited on these and recrystallization was performed, heating the substrates to above the GaAs melting point in ASH3 atmosphere, resulting in large grain regrowth oriented along the groove dimensions. Experiments with smaller groove depths and spacings were initially encouraging; single large GaAs grains would totally cover one and often two groove fields of 14 groove each spanning several hundred microns. Dielectric coatings on the grooved substrates were also used to modify the growth.

Hovel, H. J.↗

Large area, low cost space solar cells with optional wraparound contacts

Design parameters for two large area, low cost solar cells are presented, and electron irradiation testing, thermal alpha testing, and cell processing are discussed. The devices are a 2 ohm-cm base resistivity silicon cell with an evaporated aluminum reflector produced in a dielectric wraparound cell, and a 10 ohm-cm silicon cell with the BSF/BSR combination and a conventional contact system. Both cells are 5.9 x 5.9 cm and require 200 micron thick silicon material due to mission weight constraints. Normalized values for open circuit voltage, short circuit current, and maximum power calculations derived from electron radiation testing are given. In addition, thermal alpha testing values of absorptivity and emittance are included. A pilot cell processing run produced cells averaging 14.4% efficiencies at AMO 28 C. Manufacturing for such cells will be on a mechanized process line, and the area of coverslide application technology must be considered in order to achieve cost effective production.

Michaels, D.↗

Handling Fixture for Solar-Cell Arrays

Thin cells processed and stored safely. Major parts of handling fixture hold components of solar cell array modules safely, yet allow assembly process to proceed without interference. Fixture used with or without internal vacuum. Concept allows handling of thin, relatively-fragile cells, and offers potential for savings in silicon material and cost.

Dillard, P. A.↗

Structural Characterization of Solar Silicon

Compared to single crystal silicon, solar silicon generally contains large residual stresses and numerous structural defects. During subsequent processing, the defect structure can undergo further changes since, at the high temperatures required for diffusion, dislocations are sufficiently mobile to rearrange themselves in patterns which reduce long range residual stresses. This process, which is similar to the polygonization of strained metals, has no counterpart in single crystal silicon. Many of the solar silicon materials are grown from graphite dies and crucibles and therefore contain carbon concentrations in excess of 1E18. The interactions between carbon, crystal defects, intrinsic point defects, oxygen and diffusing dopants are discussed.

Ast, D. G.↗

Proceedings of the 22nd Project Integration Meeting

This report describes progress made by the Flat-Plate Solar Array Project during the period January to September 1983. It includes reports on silicon sheet growth and characterization, module technology, silicon material, cell processing and high-efficiency cells, environmental isolation, engineering sciences, module performance and failure analysis and project analysis and integration. It includes a report on, and copies of visual presentations made at the 22nd Project Integration Meeting held at Pasadena, California, on September 28 and 29, 1983.

Source record↗

Proceedings of the 24th Project Integration Meeting

Progress made by the Flat-Plate Solar Array Project is described. Reports on silicon sheet growth and characterization, silicon material, process development, high-efficiency cells, environmental isolation, engineering sciences, and reliability physics are presented along with copies of visual presentations made at the 24th Project Integration Meeting.

Tustin, D.↗