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At least 217 records · Page 12

Thermophysical Properties of Selected II-VI Semiconducting Melts

Thermophysical properties are essential for the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the II-VI semiconductor melts are scarce. This paper reports the results of the temperature dependence of melt density, viscosity and electrical conductivity of selected II-VI compounds, including HgTe, HgCdTe and HgZnTe. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. The results were compared with and showed good agreement with the existing data in the literature.

Li, C.↗

Transient Torque Method: A Fast and Nonintrusive Technique to Simultaneously Determine Viscosity and Electrical Conductivity of Semiconducting and Metallic Melts

A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of liquid metals and molten semiconductors. The experimental setup of the transient torque method is similar to that of the oscillation cup method. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate around its vertical axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numerically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4 C. The results were in excellent agreement with published data. The method is nonintrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer to measure just the viscosity of the melt or as a rotating magnetic field method to determine the electrical conductivity of a melt or a solid if desired.

Li, C.↗

A Two-Dimensional, Semiconducting Bolometer Array for HAWC

The Stratospheric Observatory For Infrared Astronomy's (SOFIA's) High resolution Airborne Wideband Camera (HAWC) will use an ion-implanted silicon bolometer array developed at NASA s Goddard Space Flight Center (GSFC). The GSFC Pop-Up Detectors (PUDs) use a unique folding technique to enable a 12 x 32 element closepacked array of bolometers with a filling factor greater than 95%. The HAWC detector uses a resistive metal film on silicon to provide frequency independent, approx. 50% absorption over the 40 - 300 micron band. The silicon bolometers are manufactured in 32-element rows within silicon frames using Micro Electro Mechanical Systems (MEMS) silicon etching techniques. The frames are then cut, "folded", and glued onto a metallized, ceramic, thermal bus "bar". Optical alignment using micrometer jigs ensures their uniformity and correct placement. The rows are then stacked side-by-side to create the final 12 x 32 element array. A kinematic Kevlar suspension system isolates the 200 mK bolometer cold stage from the rest of the 4K detector housing. GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The Junction Field Effect Transistor (JFET) preamplifiers for all the signal channels operate at 120 K, yet they are electrically connected and located in close proximity to the bolometers. The JFET module design provides sufficient thermal isolation and heat sinking for these, so that their heat is not detected by the bolometers. Preliminary engineering results from the flight detector dark test run are expected to be available in July 2004. This paper describes the array assembly and mechanical and thermal design of the HAWC detector and the JFET module.

Voellmer, George M.↗

Thermophysical and Optical Properties of Semiconducting Ga2Te3 Melt

The majority of bulk semiconductor single crystals are presently grown from their melts. The thermophysical and optical properties of the melts provide a fundamental understanding of the melt structure and can be used to optimize the growth conditions to obtain higher quality crystals. In this paper, we report several thermophysical and optical properties for Ga2Te3 melts, such as electrical conductivity, viscosity, and optical transmission for temperatures ranging from the melting point up to approximately 990 C. The conductivity and viscosity of the melts are determined using the transient torque technique. The optical transmission of the melts is measured between the wavelengths of 300 and 2000 nm by an dual beam reversed-optics spectrophotometer. The measured properties are in good agreement with the published data. The conductivities indicate that the Ga2Te3 melt is semiconductor-like. The anomalous behavior in the measured properties are used as an indication of a structural transformation in the Ga2Te3 melt and discussed in terms of Eyring's and Bachinskii's predicted behaviors for homogeneous melts.

Li, Chao↗

Properties of Single Crystalline Semiconducting CoSb(sub 3)

A study of the properties of the skutterudite compound CoSb(sub 3) was caried out on single crystals grown by the Bridgman gradient freze technique....Our results show that the dominant carrier scattering mechanism around room temperature is acoustic phonon scattering.

skutterudites↗

Properties of Semiconducting Ru_2Ge_3

Transport properties of large single crystalline samples of Ru_2Ge_3 grown from the melt have been investigated in a 25-1000 C temperature range. A diffusionless transition between 500 and 550C from a high temperature tetragonal structure to a low temperature orthorhombic structure was clearly observed. Results showed that both the low temperature orthorhombic and the high temperature structural tetragonal phase are semiconductors. Some anisotropy of the transport coefficients was determined by measuring the samples in orientations parallel and perpendicular to the preferential direction of crystal growth. Large Seebeck coefficient (up to 400 microVK^(-1)) and low thermal conductivity (as low as 20x10^(-3) Wcm^(-1)K^(-1)) were achieved for the low temperature orthorhombic phase. Difficulties in preparing heavily doped samples and low Hall mobilities have limited values for the maximum figure of merit to 0.5 x 10^(-3) K^(-1) at 500 C.

Fleurial, Jean-Pierre↗

Piezoelectric and Semiconducting Coupled Nanogenerators

An electrical generator includes a substrate, a semiconductor piezoelectric structure having a first end and an opposite second end disposed adjacent to the substrate, a first conductive contact and a second conductive contact. The structure bends when a force is applied adjacent to the first end, thereby causing an electrical potential difference to exist between a first side and a second side of the structure. The first conductive contact is in electrical communication with the first end and includes a material that creates a Schottky barrier between a portion of the first end of the structure and the first conductive contact. The first conductive contact is also disposed relative to the structure in a position so that the Schottky barrier is forward biased when the structure is deformed, thereby allowing current to flow from the first conductive contact into the first end.

Wang, Zhong L.↗

Organic-semiconducting hybrid solar cell

The embodiment of this invention lies on experimental evidence of photoconductivity activity of a hybrid solar cell, organic/chalcogenide. The device is made of thin layers of conductive indium-tin-oxide (ITO) on glass with a 100 nm layer of chalcogenide molybdenum di-sulfide (MoS 2 ) and a thin layer of about ˜50 nm of complex organic compound assembled at room temperature. The device was tested to conventional electrical transport measurements in the regime of −1V to 1V under electromagnetic radiation simulator at 100 mW/cm 2 . Results indicate solar conversion efficiency of 2.48% and current density of 6.35 mA/cm 2 .

14 SOLAR ENERGY↗

Semiconducting devices containing quantum wells

The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.

Steiner, Myles Aaron↗

Tunable Solid‐State Properties and Anisotropic Charge Mobility in Hydrogen‐Bonded Diketopyrrolopyrrole Polymers via Automated Device Fabrication and Characterization

The optoelectronic properties of semiconducting polymers and device performance rely on a delicate interplay of design and processing conditions. However, screening and optimizing the relationships between these parameters for reliably fabricating organic electronics can be an arduous task requiring significant time and resources. To overcome this challenge, Polybot is developed—a robotic platform within a self‐driving lab that can efficiently produce organic field‐effect transistors (OFETs) from various semiconducting polymers via high‐throughput blade coating deposition. Polybot not only handles the fabrication process but also can conduct characterization tests on the devices and autonomously analyze the data gathered, thus facilitating the rapid acquisition of data on a large scale. This work leverages the capabilities of this platform to investigate the fabrication of OFETs using hydrogen bonding‐containing semiconducting polymers. Through high‐throughput fabrication and characterization, various data trends are analyzed, and large extents of anisotropic charge mobility are observed in devices. The materials are thoroughly characterized to understand the role of processing conditions in solid state and electronic properties of these organic semiconductors. The findings demonstrate the effectiveness of automated fabrication and characterization platforms in uncovering novel structure–property relationships, facilitating refinement of rational chemical design, and processing conditions, ultimately leading to new semiconducting materials.

automated fabrication and characterization↗

X-Ray Diffraction and Electron Microscopy Studies of the Size Effects on Pressure-Induced Phase Transitions in CdS Nanocrystals

In recent years, investigations of the phase transition behavior of semiconducting nanoparticles under high pressure has attracted increasing attention due to their potential applications in sensors, electronics, and optics. However, current understanding of how the size of nanoparticles influences this pressure-dependent property is somewhat lacking. In particular, phase behaviors of semiconducting CdS nanoparticles under high pressure have not been extensively reported. Therefore, in this work, CdS nanoparticles of different sizes are used as a model system to investigate particle size effects on high-pressure-induced phase transition behaviors. In particular, 7.5, 10.6, and 39.7 nm spherical CdS nanoparticles are synthesized and subjected to controlled high pressures up to 15 GPa in a diamond anvil cell. Analysis of all three nanoparticles using in-situ synchrotron wide-angle X-ray scattering (WAXS) data shows that phase transitions from wurtzite to rocksalt occur at higher pressures than for bulk material. Bulk modulus calculations not only show that the wurtzite CdS nanomaterial is more compressible than rocksalt, but also that the compressibility of CdS nanoparticles depends on their particle size. Furthermore, sintering of spherical nanoparticles into nanorods was observed for the 7.5 nm CdS nanoparticles. Our results provide new insights into the fundamental properties of nanoparticles under high pressure that will inform designs of new nanomaterial structures for emerging applications.

Meng, Lingyao↗

CRADA Number NFE-19-07845 with American Nanotechnologies, Inc. (CRADA Final Report)

Cooperative Research and Development Agreement (CRADA) NFE-19-07845 between Oak Ridge National Laboratory (ORNL) and American Nanotechnologies, Inc. (ANI) focused on studying the use of dielectrophoresis as a mechanism to purify nanoparticles, particularly semiconducting carbon nanotubes (CNTs). The successful development of low-cost purification processes is a significant bottleneck in the adoption of semiconducting CNTs in commercial semiconducting devices. ANI is a startup company developing scalable systems for performing nanoparticle dielectrophoresis, which has previously been used only in microfluidic devices. The work done under this CRADA is exploring the use of ANI’s patent resonant dielectrophoresis (rDEP) technology and its ability to purify semiconducting CNTs at large scale. While continued work is on-going, r-DEP has proven to be a viable way to control nanoparticles in bulk dispersions. Optimization of the process is now underway to reach minimum viable product and begin material sales. Additionally, ANI and ORNL continue to collaborate on leveraging this technology to reach down the value chain and create new commercial devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Electrically Conductive Polyimide Films

Semiconducting surfaces of SnO2 formed by curing polyamic acids containing tin complexes. Polyimide films made semiconductive via incorporation of semiconductive surface layers of SnO2. If SnO2-surfaced polyimide film used as free-standing film, then semiconductive layer protected by top coat of polyimide, deposited as film from solution directly onto SnO2. Resultant films flexible and resistant to both weather and high temperature. Used on aircraft to provide resistance to lightning strikes, and in microelectronics and flexible circuitry.

St. Clair, Anne K.↗