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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Observation of single-defect memristor in an MoS2 atomic sheet

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide and hexagonal boron nitride sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS 2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗
NASA NTRS1974

The Ranicon - A resistive anode image converter

A versatile photon and charged particle imaging system is described. The Ranicon employs a microchannel electron multiplier plate to convert each detected event into a charge signal. This charge pulse is proximity-focused onto a large-area resistive anode plate equipped with pickup electrodes on its edges. Each event is located electronically by the ratios of the charges collected at the edges or by the differences of the signals' risetimes. One- or two-dimensional pictures are built up by storing events digitally (e.g., a core memory) or in analog form (e.g., a storage oscilloscope). Compact laboratory models have been constructed and tested. Operating characteristics, applications, limitations, and advantages of the Ranicon are discussed.

Lampton, M.↗
NASA NTRS1990

Development of shape memory metal as the actuator of a fail safe mechanism

A small, compact, lightweight device was developed using shape memory alloy (SMA) in wire form to actuate a pin-puller that decouples the flanges of two shafts. When the SMA is heated it contracts producing a useful force and stroke. As it cools, it can be reset (elongated in this case) by applying a relatively small force. Resistive heating is accomplished by running a current through the SMA wire for a controlled length of time. The electronics to drive the device are not elaborate or complicated, consisting of a timed current source. The total available contraction is 3 percent of the length of the wire. This device, the engineering properties of the SMA, and the tests performed to verify the design concept are described.

Ford, V. G.↗
DOE OSTI2021

Stacking-engineered ferroelectricity in bilayer boron nitride

Stacking a ferroelectric Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasuda et al. used transport measurements, whereas Vizner Stern et al. focused on atomic force microscopy. Science , abd3230 and abe8177, this issue p. 1458 and p. 1462 ; see also abi7296, p. 1389

Science & Technology - Other Topics↗
NASA NTRS2009

Intermetallic Nickel-Titanium Alloys for Oil-Lubricated Bearing Applications

An intermetallic nickel-titanium alloy, NITINOL 60 (60NiTi), containing 60 wt% nickel and 40 wt% titanium, is shown to be a promising candidate material for oil-lubricated rolling and sliding contact applications such as bearings and gears. NiTi alloys are well known and normally exploited for their shape memory behavior. When properly processed, however, NITINOL 60 exhibits excellent dimensional stability and useful structural properties. Processed via high temperature, high-pressure powder metallurgy techniques or other means, NITINOL 60 offers a broad combination of physical properties that make it unique among bearing materials. NITINOL 60 is hard, electrically conductive, highly corrosion resistant, less dense than steel, readily machined prior to final heat treatment, nongalling and nonmagnetic. No other bearing alloy, metallic or ceramic encompasses all of these attributes. Further, NITINOL 60 has shown remarkable tribological performance when compared to other aerospace bearing alloys under oil-lubricated conditions. Spiral orbit tribometer (SOT) tests were conducted in vacuum using NITINOL 60 balls loaded between rotating 440C stainless steel disks, lubricated with synthetic hydrocarbon oil. Under conditions considered representative of precision bearings, the performance (life and friction) equaled or exceeded that observed with silicon nitride or titanium carbide coated 440C bearing balls. Based upon this preliminary data, it appears that NITINOL 60, despite its high titanium content, is a promising candidate alloy for advanced mechanical systems requiring superior and intrinsic corrosion resistance, electrical conductivity and nonmagnetic behavior under lubricated contacting conditions.

DellaCorte, C.↗
NASA NTRS1987

Gigarad-tolerant power switches and memory elements

A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.

Joyner, W. T.↗
NASA NTRS2002

Simulation Model of A Ferroelectric Field Effect Transistor

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

MacLeod, Todd C.↗
NASA NTRS2005

Finite Element Analysis of Adaptive-Stiffening and Shape-Control SMA Hybrid Composites

The usage of shape memory materials has extended rapidly to many fields, including medical devices, actuators, composites, structures and MEMS devices. For these various applications, shape memory alloys (SMAs) are available in various forms: bulk, wire, ribbon, thin film, and porous. In this work, the focus is on SMA hybrid composites with adaptive-stiffening or morphing functions. These composites are created by using SMA ribbons or wires embedded in a polymeric based composite panel/beam. Adaptive stiffening or morphing is activated via selective resistance heating or uniform thermal loads. To simulate the thermomechanical behavior of these composites, a SMA model was implemented using ABAQUS user element interface and finite element simulations of the systems were studied. Several examples are presented which show that the implemented model can be a very useful design and simulation tool for SMA hybrid composites.

Gao, Xiu-Jie↗
NASA NTRS2004

Design and Control of a Proof-of-Concept Active Jet Engine Intake Using Shape Memory Alloy Actuators

The design and control of a novel proof-of-concept active jet engine intake using Nickel-Titanium (Ni-Ti or Nitinol) shape memory alloy (SMA) wire actuators is used to demonstrate the potential of an adaptive intake to improve the fuel efficiency of a jet engine. The Nitinol SMA material is selected for this research due to the material's ability to generate large strains of up to 5 percent for repeated operations, a high power-to-weight ratio, electrical resistive actuation, and easy fabrication into a variety of shapes. The proof-of-concept engine intake employs an overlapping leaf design arranged in a concentric configuration. Each leaf is mounted on a supporting bar that rotates upon actuation by SMA wires electrical resistive heating. Feedback control is enabled through the use of a laser range sensor to detect the movement of a leaf and determine the radius of the intake area. Due to the hysteresis behavior inherent in SMAs, a nonlinear robust controller is used to direct the SMA wire actuation. The controller design utilizes the sliding-mode approach to compensate for the nonlinearities associated with the SMA actuator. Feedback control experiments conducted on a fabricated proof-of-concept model have demonstrated the capability to precisely control the intake area and achieve up to a 25 percent reduction in intake area. The experiments demonstrate the feasibility of engine intake area control using the proposed design.

Song, Gangbing↗
NASA NTRS2001

Electronic Model of a Ferroelectric Field Effect Transistor

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

MacLeod, Todd C.↗
NASA NTRS2002

Structural Acoustic Response of a Shape Memory Alloy Hybrid Composite Panel (Lessons Learned)

This study presents results from an effort to fabricate a shape memory alloy hybrid composite (SMAHC) panel specimen and test the structure for dynamic response and noise transmission characteristics under the action of thermal and random acoustic loads. A method for fabricating a SMAHC laminate with bi-directional SMA reinforcement is described. Glass-epoxy unidirectional prepreg tape and Nitinol ribbon comprise the material system. Thermal activation of the Nitinol actuators was achieved through resistive heating. The experimental hardware required for mechanical support of the panel/actuators and for establishing convenient electrical connectivity to the actuators is presented. Other experimental apparatus necessary for controlling the panel temperature and acquiring structural acoustic data are also described. Deficiency in the thermal control system was discovered in the process of performing the elevated temperature tests. Discussion of the experimental results focuses on determining the causes for the deficiency and establishing means for rectifying the problem.

Turner, Travis L.↗
DOE OSTI2022

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. In this report we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a two-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3% with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Emergent Quantum Magnetism and Cryogenic Spin-Memory in Twisted Bilayer Graphene

Recently developed techniques for assembling moiré heterostructures have enabled unprecedented control of the interlayer interactions within the heterostructure, allowing for the realization of strongly correlated electronic states. The experimentally realized states, to date, include a variety of topological states, superconductivity, and strange metal behavior. However, the phenomenology varies significantly from sample to sample. Here we will present microscopy techniques for further characterization of both the progenitor exfoliated materials and the composite moiré heterostructure. The application of these techniques has allowed for an unprecidented degree of characterization in ambient conditions. Additionally we will explore the use of resistively detected electron spin resonance (ESR) as a novel probe for spin order in moirés. While our results do not show clearly dispersive features that would unambiguously evince spin excitations within the sample, the technique is still promising.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗
DOE OSTI2024

Electrode Elastic Modulus as the Dominant Factor in the Capping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

The discovery of ferroelectricity in hafnia based thin films has catalyzed significant research focused on understanding the ferroelectric property origins and means to increase stability of the ferroelectric phase. Prior studies have revealed that biaxial tensile stress via an electrode “capping effect” is a suspected ferroelectric phase stabilization mechanism. This effect is commonly reported to stem from a coefficient of thermal expansion (CTE) incongruency between the hafnia and top electrode. Despite reported correlations between ferroelectric phase fraction and electrode CTE, the thick silicon substrate dominates the mechanics and CTE-related stresses, negating any dominant contribution from an electrode CTE mismatch toward the capping effect. In this work, these discrepancies are reconciled, and the origin of these differences deriving from electrode elastic modulus, not CTE, is demonstrated. Pt/M/TaN/Hf 0.5 Zr 0.5 O 2 /TaN/Si devices, where M is platinum, TaN, iridium, tungsten, and ruthenium, were fabricated. Sin 2 (ψ)-based X-ray diffraction measurements of biaxial stress in the HZO layer reveal a strong correlation between biaxial stress, remanent polarization, and electrode elastic modulus. Conversely, a low correlation exists between the electrode CTE, HZO biaxial stress, and remanent polarization. A higher elastic modulus enhances the resistance to electrode elastic deformation, which intensifies the capping effect during crystallization, and culminates in the tandem restriction of out-of-plane hafnia volume expansion and preferential orientation of the polar c-axis normal to the plane. These behaviors concomitantly increase the ferroelectric phase stability and polarization magnitude. This work provides electrode material selection guidelines toward the development of high-performing ferroelectric hafnia into microelectronic devices, such as nonvolatile memories.

36 MATERIALS SCIENCE↗
DOE OSTI2021

NRC Multiphysics Analysis Capability Deployment FY21: Part 3

This report details the progress and activities of Idaho National Laboratory (INL) on the Nuclear Regulatory Commission (NRC) project “Development and Modeling Support for Advanced Non-Light Water Reactors.” The deliverables completed for this report are: Deliverable 1c: the capability to model gas mixtures was added to Pronghorn. A test problem mimicking the conditions achieved in a depressurized loss of forced cooling (DLOFC) event was solved with both RELAP-5 and Pronghorn. Pronghorn employed a finite vol ume method with the Kurganov-Tadmor discretization. The comparison between the mass fraction spatial profiles computed with RELAP-5 and Pronghorn clearly shows the presence of numerical artifacts (i.e., overly diffusive behavior at low Mach numbers). We confirmed that the problem disappears at higher Mach numbers. We recommend future work on the implementation of a low Mach finite volume formulation to better treat low Mach number problems. Deliverable 2a: we demonstrated two approaches to model the radiation/conduction/natural convection heat transfer across a stagnant gas for the PBMR-400 design using Pronghorn. The first approach is based on the net radiation method, which relies on the computation of view factors with the Multiphysics Object-Oriented Simulation Environment (MOOSE) ray tracing capability. The second method is a traditional thermal resistance approach. The test problems include both 2D and 3D geometries. In all cases, the results show very good agreement during a DLOFC transient. This confirms that the faster thermal resistance method produces solutions that are equivalent to the net radiation method for this geometry. Deliverable 3d: we demonstrated the use of the advection kernel for the delayed neutron precursor equation in Griffin with a 2D MSFR model. The results appear physical but further verification is recommended. We also recommend the addition of conjugate heat transfer to compute the temperatures and model the thermomechanic behavior of the reflectors and other structures. Significant memory and performance issues were encountered in the 3D axisymmetric model. Future work is recommended in this area. Task 8g: this task allows multidimensional MOOSE applications to be coupled to system codes (RELAP-7 and SAM). We implemented a faster multiphysics iteration coupling algorithm, which provides an overall 6× acceleration of the 3D-1D coupling of the core multidi- mensional fluid flow solver and the 1D primary and secondary loop model.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
NASA NTRS2011

Thermal Properties of Microstrain Gauges Used for Protection of Lithium-Ion Cells of Different Designs

The purpose of this innovation is to use microstrain gauges to monitor minute changes in temperature along with material properties of the metal cans and pouches used in the construction of lithium-ion cells. The sensitivity of the microstrain gauges to extremely small changes in temperatures internal to the cells makes them a valuable asset in controlling the hazards in lithium-ion cells. The test program on lithium-ion cells included various cell configurations, including the pouch type configurations. The thermal properties of microstrain gauges have been found to contribute significantly as safety monitors in lithium-ion cells that are designed even with hard metal cases. Although the metal cans do not undergo changes in material property, even under worst-case unsafe conditions, the small changes in thermal properties observed during charge and discharge of the cell provide an observable change in resistance of the strain gauge. Under abusive or unsafe conditions, the change in the resistance is large. This large change is observed as a significant change in slope, and this can be used to prevent cells from going into a thermal runaway condition. For flexible metal cans or pouch-type lithium-ion cells, combinations of changes in material properties along with thermal changes can be used as an indication for the initiation of an unsafe condition. Lithium-ion cells have a very high energy density, no memory effect, and almost 100-percent efficiency of charge and discharge. However, due to the presence of a flammable electrolyte, along with the very high energy density and the capability of releasing oxygen from the cathode, these cells can go into a hazardous condition of venting, fire, and thermal runaway. Commercial lithium-ion cells have current and voltage monitoring devices that are used to control the charge and discharge of the batteries. Some lithium-ion cells have internal protective devices, but when used in multi-cell configurations, these protective devices either do not protect or are themselves a hazard to the cell due to their limitations. These devices do not help in cases where the cells develop high impedance that suddenly causes them to go into a thermal runaway condition. Temperature monitoring typically helps with tracking the performance of a battery. But normal thermistors or thermal sensors do not provide the accuracy needed for this and cannot track a change in internal cell temperatures until it is too late to stop a thermal runaway.

Jeevarajan, Judith↗