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At least 217 records · Page 12

Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays

Intrinsic infrared detectors in the long-wavelength range (6 - 20 ??are based on interband transition which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band.

IR QWIP Focal Plane Arrays Quantum Wells Infrared↗

Imaging interferometer using dual broadband quantum well infrared photodetectors

The Jet Propulsion Laboratory is developing a new imaging interferometer that has double the efficiency of conventional interferometers and only a fraction of the mass and volume. The project is being funded as part of the Defense Advanced Research Projects Agency (DARPA) Photonic Wavelength And Spatial Signal Processing program (PWASSSP).

IR quantum well interferometer imaging spectromete↗

Recent developments and applications of Quantum Well Infrared Photodetector focal plane arrays

In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128x128 QWIP focal plane array camera, hand-held and palmsize 256x256 long wavelength QWIP cameras and 648x480 long-wavelength camera, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.

multi-quantum-wells↗

Quantum Well Infrared Photodetector Research and Development at Jet Propulsion Laboratory

In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128 x 128 QWIP focal plane array camera, hand-held and palmize 256 x 256 long-wavelength QWIP cameras and 648 x 480 long-wavelength cameras, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.

Quantum↗

Liquid phase epitaxy growth of GaAs/GaAlAs multi-quantum well structures

Experiments in liquid phase epitaxial fabrication of thin GaAs/GaAlAs layers over a planar substrates have been carried out. Layer thicknesses smaller than 300 A were routinely obtained, with the best result being 120 A. Interface sharpness between the layers is approximately 10 A, which is comparable to OMCVD results, but the layers' thicknesses are usually not uniform. Of the experimental parameters, the growth time and the cooling rate seem to have the largest effect on the obtained layer thickness, while the growth temperature and the substrate crystallographic orientation produce less noticeable effects. Quantum effects in the grown layers were observed by photoluminescence measurements.

Cser, J.↗