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At least 217 records · Page 12

Plasma deposition of amorphous hydrogenated carbon films on III-V semiconductors

Amorphous hydrogenated carbon films were grown on GaAs, InP and fused silica substrates using plasmas generated from hydrocarbon gases. Methane and n-butane sources were utilized. The effects of flow rate and power density on film growth were investigated. Carbon was the major constituent in the films. The degree of asymmetry at the carbon-semiconductor interface was approximately independent of the power density. Different H-C bonding configurations were detected by the technique of secondary-ion mass spectrometry. Band gaps up to 3 eV were obtained from optical absorption studies. Breakdown strengths as high as 600 MV/m were measured.

Pouch, John J.↗

Emittance Theory for Thin Film Selective Emitter

Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

Chubb, Donald L.↗

Advanced Packaging Materials and Techniques for High Power TR Module: Standard Flight vs. Advanced Packaging

The higher output power densities required of modern radar architectures, such as the proposed DESDynI [Deformation, Ecosystem Structure, and Dynamics of Ice] SAR [Synthetic Aperture Radar] Instrument (or DSI) require increasingly dense high power electronics. To enable these higher power densities, while maintaining or even improving hardware reliability, requires advances in integrating advanced thermal packaging technologies into radar transmit/receive (TR) modules. New materials and techniques have been studied and compared to standard technologies.

Deformation, Ecosystem Structure, and Dynamics of ↗

Robust, Rework-able Thermal Electronic Packaging: Applications in High Power TR Modules for Space

The higher output power densities required of modern radar architectures, such as the proposed DESDynI [Deformation, Ecosystem Structure, and Dynamics of Ice] SAR [Synthetic Aperture Radar] Instrument (or DSI) require increasingly dense high power electronics. To enable these higher power densities, while maintaining or even improving hardware reliability, requires improvements in integrating advanced thermal packaging technologies into radar transmit/receive (TR) modules. New materials and techniques have been studied and are now being implemented side-by-side with more standard technology typically used in flight hardware.

Hoffman, James Patrick↗

Coupling of magnetopause-boundary layer to the polar ionosphere

The plasma dynamics in the low-latitude boundary layer and its coupling to the polar ionosphere under boundary conditions at the magnetopause are investigated. In the presence of a driven plasma flow along the magnetopause, the Kelvin-Helmholtz instability can develop, leading to the formation and growth of plasma vortices in the boundary layer. The finite ionospheric conductivity leads to the decay of these vortices. The competing effect of the formation and decay of vortices leads to the formation of strong vortices only in a limited region. Several enhanced field-aligned power density regions associated with the boundary layer vortices and the upward field-aligned current (FAC) filaments can be found along the postnoon auroral oval. These enhanced field-aligned power density regions may account for the observed auroral bright spots.

Wei, C. Q.↗

Ion-implanted high microwave power indium phosphide transistors

Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.

Biedenbender, Michael D.↗

Testing Metal Chlorides For Use In Sodium-Cell Cathodes

Cyclic voltammetric curves of transition-metal wires in molten NaAlCl4 electrolyte used to eliminate suitability of transition metals as cathodes in sodium cells. Cyclic voltammetry used in conjunction with measurement of galvanostatic polarization curves determines whether given metal chloride suitable as cathode material in such cell. Cells useful in such high-energy-density and high-power-density applications as leveling loads on electric-power plants, supplying power to electric ground vehicles, and aerospace applications.

Bugga, Ratnakumar V.↗

Progress in AMTEC electrode experiments and modeling

Four electrode compositions have demonstrated power densities high enough to make practical alkali metal thermoelectric converter (AMTEC) systems feasible. These electrode compositions are very thin molybdenum, platinum/tungsten trilayer, rhodium/tungsten bilayer, and titanium nitride. These electrodes have produced stable maximum power densities of 0.4 to 0.8 W/sq cm at 1100-1250 K for 90 to 160 hours.

Underwood, M. L.↗

Electromagnetic Compatibility Testing Studies

This report discusses the results on analytical models and measurement and simulation of statistical properties from a study of microwave reverberation (mode-stirred) chambers performed at Texas Tech University. Two analytical models of power transfer vs. frequency in a chamber, one for antenna-to-antenna transfer and the other for antenna to D-dot sensor, were experimentally validated in our chamber. Two examples are presented of the measurement and calculation of chamber Q, one for each of the models. Measurements of EM power density validate a theoretical probability distribution on and away from the chamber walls and also yield a distribution with larger standard deviation at frequencies below the range of validity of the theory. Measurements of EM power density at pairs of points which validate a theoretical spatial correlation function on the chamber walls and also yield a correlation function with larger correlation length, R(sub corr), at frequencies below the range of validity of the theory. A numerical simulation, employing a rectangular cavity with a moving wall shows agreement with the measurements. The determination that the lowest frequency at which the theoretical spatial correlation function is valid in our chamber is considerably higher than the lowest frequency recommended by current guidelines for utilizing reverberation chambers in EMC testing. Two suggestions have been made for future studies related to EMC testing.

Trost, Thomas F.↗

P/N InP solar cells on Ge wafers

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented indicating InP/Ge has more power output than GaAs/Ge cells at fluences in excess of this value.

Wojtczuk, Steven↗

EOL performance comparison of GaAs/Ge and Si BSF/R solar arrays

EOL power estimates for solar array designs are significantly influenced by the predicted degradation due to charged particle radiation. New radiation-induced power degradation data for GaAs/Ge solar arrays applicable to missions ranging from low earth orbit (LEO) to geosynchronous earth orbit (GEO) and compares these results to silicon BSF/R arrays. These results are based on recently published radiation damage coefficients for GaAs/Ge cells. The power density ratio (GaAs/Ge to Si BSF/R) was found to be as high as 1.83 for the proton-dominated worst-case altitude of 7408 km medium Earth orbit (MEO). Based on the EOL GaAs/Ge solar array power density results for MEO, missions which were previously considered infeasible may be reviewed based on these more favorable results. The additional life afforded by using GaAs/Ge cells is an important factor in system-level trade studies when selecting a solar cell technology for a mission and needs to be considered. The data presented supports this decision since the selected orbits have characteristics similar to most orbits of interest.

Woike, Thomas J.↗

Low-Frequency Coherence Break in the Soft X-Ray State of GRS 1915+105

We present results from the analysis of X-ray power density spectra and coherence when GRS 1915+105 is in soft states. We use three data sets that belong to mu, phi, and delta classes as found in the work of Belloni et al. We find that the power density spectra appear t o be complex, with several features between 0.01 and 10 Hz. The coherence deviates from unity above a characteristic frequency. We discuss our results from different models. The corona size in the sphere-disk model implied by this break frequency is on the order of 10(exp 4) GM/c(exp 2), which is unphysical. Our results are more consistent with the prediction of the model of a planar corona sustained by magnetic flares, in which the characteristic frequency is associated with the longest timescale of an individual flare, which is about 8 s.

Ji, Jian-Feng↗

Cost Scaling of a Real-World Exhaust Waste Heat Recovery Thermoelectric Generator: A Deeper Dive

Cost is equally important to power density or efficiency for the adoption of waste heat recovery thermoelectric generators (TEG) in many transportation and industrial energy recovery applications. In many cases the system design that minimizes cost (e.g., the $/W value) can be very different than the design that maximizes the system's efficiency or power density, and it is important to understand the relationship between those designs to optimize TEG performance-cost compromises. Expanding on recent cost analysis work and using more detailed system modeling, an enhanced cost scaling analysis of a waste heat recovery thermoelectric generator with more detailed, coupled treatment of the heat exchangers has been performed. In this analysis, the effect of the heat lost to the environment and updated relationships between the hot-side and cold-side conductances that maximize power output are considered. This coupled thermal and thermoelectric treatment of the exhaust waste heat recovery thermoelectric generator yields modified cost scaling and design optimization equations, which are now strongly dependent on the heat leakage fraction, exhaust mass flow rate, and heat exchanger effectiveness. This work shows that heat exchanger costs most often dominate the overall TE system costs, that it is extremely difficult to escape this regime, and in order to achieve TE system costs of $1/W it is necessary to achieve heat exchanger costs of $1/(W/K). Minimum TE system costs per watt generally coincide with maximum power points, but Preferred TE Design Regimes are identified where there is little cost penalty for moving into regions of higher efficiency and slightly lower power outputs. These regimes are closely tied to previously-identified low cost design regimes. This work shows that the optimum fill factor Fopt minimizing system costs decreases as heat losses increase, and increases as exhaust mass flow rate and heat exchanger effectiveness increase. These findings have profound implications on the design and operation of various thermoelectric (TE) waste heat 3 recovery systems. This work highlights the importance of heat exchanger costs on the overall TEG system costs, quantifies the possible TEG performance-cost domain space based on heat exchanger effects, and provides a focus for future system research and development efforts.

cost analysis↗

Optimized 4 pi spherical shell depleted uranium-water shield weights for 200 to 550-megawatt reactors

Optimization calculations to determine minimum 4 pi spherical-shell weights were performed at 200-, 375-, and 550-megawatt-thermal reactor power levels. Monte Carlo analyses were performed for a reactor power level corresponding to 375 megawatts. Power densities for the spherical reactor model used varied from 64.2 to 256 watts per cubic centimeter. The dose rate constraint in the optimization calculations was 0.25 mrem per hour at 9.14 meters from the reactor center. The resulting shield weights were correlated with the reactor power levels and power densities by a regression analysis. The optimum shield weight for a 375-megawatt, 160-watt-per-cubic-centimeter reactor was 202,000 kilograms.

Wohl, M. L.↗

Digital Control Technologies for Modular DC-DC Converters

Recent trends in aerospace Power Management and Distribution (PMAD) systems focus on using commercial off-the-shelf (COTS) components as standard building blocks. This move to more modular designs has been driven by a desire to reduce costs and development times, but is also due to the impressive power density and efficiency numbers achieved by today's commercial DC-DC converters. However, the PMAD designer quickly learns of the hidden "costs" of using COTS converters. The most significant cost is the required addition of external input filters to meet strict electromagnetic interference (MIAMI) requirements for space systems. In fact, the high power density numbers achieved by the commercial manufacturers are greatly due to the lack of necessary input filters included in the COTS module. The NASA Glenn Research Center is currently pursuing a digital control technology that addresses this problem with modular DC-DC converters. This paper presents the digital control technologies that have been developed to greatly reduce the input filter requirements for paralleled, modular DC-DC converters. Initial test result show that the input filter's inductor size was reduced by 75 percent, and the capacitor size was reduced by 94 percent while maintaining the same power quality specifications.

Button, Robert M.↗

High-frequency resonant-tunneling oscillators

Advances in high-frequency resonant-tunneling-diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In0.53Ga0.47As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak-to-valley current ratio.

Brown, E. R.↗

Chapter 19B - Antenna Radiation Patterns

Modern civil and military aircraft are equipped with a variety of communication devices, radio navigation equipment, and air traffic control systems. For all of these devices appropriate antennas must be available to transmit and receive the signals. As a result, as many as 30 antennas, and sometimes even more, are mounted around today's aircraft. For this reason, it is necessary to know the capabilities of the receiving/transmitting equipment on board. These capabilities are driven by the antenna characteristics. Therefore, coverage, shading, and beam pointing pattern data are necessary for optimum electronic coverage. The aircraft antenna has to convert the available power density of the electromagnetic field to an electric voltage at its connector. This voltage level must be sufficiently high to operate the connected equipment. The reciprocity principle states that it makes no difference if the antenna is receiving or transmitting. For the certification of the aircraft antennas it must be proven that the antennas are at least generating the minimum receiver input voltage which is required for each radio service. The prime condition is, of course, that the specified field power densities of the different radio navigation and communication services are available. An important property of a radio frequency link is the electro-magnetic field intensity at every point in space for a given output power of the antenna. As the propagation of radio frequency waves in free space is well known, the spatial distribution of the field intensity needs only be measured at one spatial sphere around the antenna. The information is usually given as distributions along the circumference of flat sections through this sphere: each of these is called an ARP. Several ARPs are usually required to describe the complete spatial antenna pattern of an antenna. In addition to mathematical modeling, measurements on sub-scale models, and static measurements on full size models or aircraft on the ground, dynamic measurements on aircraft in flight play the most important role in the aircraft antenna testing and certification. [19B-1] The shape of an ARP, for one given frequency, is determined by the shape of the antenna and the shape and material of the surface it is mounted on. As the directly transmitted waves interfere with waves reflected by the aircraft skin with its complex geometry, and the surface material parameters are only roughly known, it is not possible to predict the ARP with the required accuracy. In ground measurements the earth's surface also acts as a reflector thereby causing the ground ARP to be different from the in-flight ARP. As the in-flight ARP is the ARP we are actually interested in it becomes clear that it is necessary to conduct in-flight ARP measurements. The Flight Test Engineer must be aware of the needs of the specialists who are establishing the test program for measuring antenna patterns and radar cross sections. These tests will require special test equipment and dedicated flights to obtain the data that they require. This Section provides an introduction to the principles of determining antenna patterns and the flight techniques for determining both antenna patterns and radar cross section. Reference 19B-1 provides detailed information.

Helmut Bothe↗

Sensitivity and fatigue of LiTaO3 for holographic recording

The sensitivity of LiTaO3 crystals to hologram formation has been observed to vary with impurity concentration. For a writing wavelength of 488.0 nm and power density of 1.1 W/sq cm, the sensitivity varied from a value comparable to the most sensitive doped LiNbO3 for an impure crystal to a value more than 5 orders of magnitude smaller for a purer crystal. Fatigue effects were observed upon write-erase cycling. These effects were dependent upon writing and erasure polarization and power density and could be minimized by proper choice of optical parameters.

Spinhirne, J. M.↗