High-rate deposition of ultrathick bismuth films by direct-current magnetron sputtering
Bismuth coatings deposited at room temperature by physical vapor deposition typically feature irregularly-shaped grains and a high density of voids, thereby preventing their use in many potential applications. Here, we demonstrate the deposition of low-stress, high-density 40-μm-thick Bi films by systematically studying the effect of the deposition rate and substrate tilt on the properties of Bi films deposited at room temperature by direct-current magnetron sputtering. Furthermore, results show that, with increasing deposition rate, the morphology, structure, and properties of Bi films greatly improve, while an increase in substrate tilt leads to a monotonic decrease in film thickness, density, and electrical conductivity.