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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Computational simulation of damping in composite structures

A computational methodology is developed for the prediction of passive damping in composite structures. The method involves multiple levels of damping modeling by integrating micromechanics, laminate, and structural damping theories. The effects of temperature and moisture on structural damping are included. The simulation of damping in the structural level is accomplished with finite-element discretization. Applications are performed on graphite/epoxy composite beams, plates, and shells to illustrate the methodology. Additional parametric studies demonstrate the variation of structural modal damping with respect to ply angles, fiber volume ratio, and temperature.

Saravanos, D. A.↗
DOE OSTI2025

HydroMINE: Simple, Modular and Scalable (Final Scientific/Technical Report)

Hydromine is a novel extremely versatile solution to hydrokinetics energy generation, where the external water flow facing energy sweeping area (&structure) is completely passive. One or multiple Hydromine units can easily deploy from a multitude of floating or stationary marine structures, opening a multitude of application and use cases. Proposing Hydromine, it was initially found that the concept could easily scale into all of the four areas of ARPA-E SHARKS cases, as well as other applications, this is illustrated in Figure 1. Also, the relatively aggressive cost of energy targets of the program could be met in the conceptual phase.

13 HYDRO ENERGY↗
NASA NTRS1992

Long Duration Space Materials Exposure (LDSE)

The Center on Materials for Space Structures (CMSS) at Case Western Reserve University is one of seventeen Commercial Centers for the Development of Space. It was founded to: (1) produce and evaluate materials for space structures; (2) develop passive and active facilities for materials exposure and analysis in space; and (3) develop improved material systems for space structures. A major active facility for materials exposure is proposed to be mounted on the exterior truss of the Space Station Freedom (SSF). This Long Duration Space Materials Exposure (LDSE) experiment will be an approximately 6 1/2 ft. x 4 ft. panel facing into the velocity vector (RAM) to provide long term exposure (up to 30 years) to atomic oxygen, UV, micro meteorites, and other low earth orbit effects. It can expose large or small active (instrumented) or passive samples. These samples may be mounted in a removable Materials Flight Experiment (MFLEX) carrier which may be periodically brought into the SSF for examination by CMSS's other SSF facility, the Space Materials Evaluation Facility (SMEF), which will contain a Scanning Electron Microscope, a Variable Angle & Scanning Ellipsometer, a Fourier Transform Infrared Spectrometer, and other analysis equipment. These facilities will allow commercial firms to test their materials in space and promptly obtain information on their materials survivability in the LEO environment.

Allen, David↗
DOE OSTI2017

Perspective—Localized Corrosion: Passive Film Breakdown vs Pit Growth Stability

A debate about the critical step in localized corrosion has raged for decades. Some researchers focus on the composition and structure of the passive film associated with the initial breakdown of the film, whereas others consider that the susceptibility to pitting is controlled by the pit growth kinetics and the stabilization of pit growth. The basis for a unified theory of pitting is presented here in which pit stability considerations are controlling under aggressive conditions (harsh electrolytes and extreme environments and/or susceptible microstructures) and the passive film properties and protectiveness are the critical factors in less extreme environments and/or for less susceptible alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2016

High temperature interface superconductivity

High-T c superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layer-by-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T c Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both ‘passive’ hetero-structures as well as surface-induced effects by external gating are discussed. Here, we conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1983

Quick-Connect, Self-Alining Latch

Sturdy latch tolerates 10 degrees of angular mismatch in joining structural elements. Hexagonal passive plate nests in active plate, guided by capture plates and alinement keys and grooves. Center hole in both active and passive plates is 1 meter in diameter. Latch has possible uses a pipe joint, connector for parts of portable structures, and fitting for marine risers on offshore drilling rigs.

Burns, G. C.↗
NASA NTRS1991

Robust controller design for structures with displacement sensors

The passivity theorem may be used to design robust controllers for structures with positive transfer functions. The authors obtain a similar result for systems with displacement sensors. In order to illustrate the ideas discussed, a specific second-order dynamic system is considered.

Morris, K. A.↗
DOE OSTI2020

Initial development of an in-situ, passive material surveillance test article for monitoring high temperature reactor structural components

This report describes the development of a family of passively-actuated surveillance test articles, suitable for use in an in-situ reactor test program monitoring the degradation in structural material properties caused by the reactor environment. The test articles apply creep-fatigue-type cyclic load to a test section driven by changes in the reactor coolant temperature converted to mechanical force by differential thermal expansion. The report describes three types of test articles, all of which apply the load to a 316H test section using Alloy 617 as the driver material. The three types of specimens each serve a unique purpose: (1) initial proof-of-concept, (2) validation of the models used to size the specimens to achieve a given strain range, and (3) demonstration that the articles can be miniaturized for use in an actual operating reactor. In addition to the specimen design, fabrication, and testing, this report describes the outline of two types of in-situ monitoring programs, using the test article. Monitoring programs such as these could be a critical component in gaining regulator acceptance for Molten Salt Reactor (MSR) designs using structural materials for which there is little long-term experimental environmental testing or operating experience available for calibrating the component structural design.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
NASA NTRS1995

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, B.↗
NASA NTRS1996

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab↗
DOE OSTI2015

Passive absolute age and temperature history sensor

A passive sensor for historic age and temperature sensing, including a first member formed of a first material, the first material being either a metal or a semiconductor material and a second member formed of a second material, the second material being either a metal or a semiconductor material. A surface of the second member is in contact with a surface of the first member such that, over time, the second material of the second member diffuses into the first material of the first member. The rate of diffusion for the second material to diffuse into the first material depends on a temperature of the passive sensor. One of the electrical conductance, the electrical capacitance, the electrical inductance, the optical transmission, the optical reflectance, or the crystalline structure of the passive sensor depends on the amount of the second material that has diffused into the first member.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Novel Poly-Si:Ga/SiOx Passivating Contacts through Non-Equilibrium Doping

Poly-Si/SiOx passivating contacts are one of the key enablers for high-efficiency, low-cost c-Si solar cells. In recent years, record devices have reached efficiencies of 26% in the laboratory and 25% in the industry. The current cell structure utilizing a tunneling oxide passivating contact structure with a back phosphorus-doped poly- Si/SiOx passivating contact and a front boron diffused emitter suffers from large emitter recombination. Thus, replacing the front B diffused emitter with a p-type passivating contact is a route to overcome this deficiency. This gives rise to front/back poly-Si based passivating contacts. To address the low passivation performance of the B-doped poly-Si passivating contacts, we replace B with Ga as a novel p-type dopant to avoid dopant accumulation in the tunneling oxide, which is known to lead to large degradation loss in passivation quality. Here, we introduce a non-equilibrium method via pulsed laser melting to thermally melt and recrystallize the poly-Si and redistribute the dopants, achieving doping concentrations above the solid solubility limit (~4E19 cm-3). We demonstrate a good passivation quality with an iVoc of 721 mV with an active Ga doping concentration in poly-Si >1020 cm-3. Furthermore, we show a low contact resistivity of 33.2 +/- 9.3 mO cm2 using a diode model calculation. Finally, cross-section scanning spreading resistance microscopy was performed to determine the resistance profile across the non-homogeneously doped poly-Si layer.

c-Si↗
DOE OSTI2014

Structure functions and applicability of Yaglom's relation in passive-scalar turbulent mixing at low Schmidt numbers with uniform mean gradient

An extensive direct numerical simulation database over a wide range of Reynolds and Schmidt numbers is used to examine the Schmidt number dependence of the structure function of passive scalars and the applicability of the so-called Yaglom's relation in isotropic turbulence with a uniform mean scalar gradient. For the moderate Reynolds numbers available, the limited range of scales in scalar fields of very low Schmidt numbers (as low as 1/2048) is seen to lead to weaker intermittency, and weaker alignment between velocity gradients and principal strain rates. Strong departures from both Obukhov-Corrsin scaling for second-order structure functions and Yaglom's relation for the mixed velocity-scalar third-order structure function are observed. Finally, evaluation of different terms in the scalar structure function budget equation assuming statistical stationarity in time shows that, if the Schmidt number is very low, at intermediate scales production and diffusion terms (instead of advection) are major contributors in the balance against dissipation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Modeling Interfaces to Support Low-Level Waste Disposal System Performance Assessments - 20366

In low-level waste (LLW) disposal sites, interfaces between cementitious materials, used as waste forms and/or engineered barriers, and the surrounding soil or backfill material are often encountered. Reactions across these interfaces may lead to chemical and structural alteration of the cementitious and backfill materials that may ultimately affect long-term performance. For example, the ingress of carbon dioxide from soil gas into a waste tank concrete shell at the Hanford Site or Savannah River Site (SRS) or a low-level waste disposal vault at SRS leads to carbonation of cement hydration products (e.g. portlandite, calcium-silicate hydrate or C-S-H, and ettringite). The result of carbonation is a decrease in pH in the cement paste portion of the tank wall or vault concrete structure that could ultimately lead to de-passivation of the embedded structural steel and, eventually, to cracking. Cracking can lead to increased ingress of water into the structure, corresponding increased release of constituents of concern, and to subsequent increased transport of these constituents to the surrounding environment. The mobility of trace constituents (e.g., radionuclides of concern) in waste forms may increase in response to changes in pH, pore structure, and mineralogical gradients. Depletion of portlandite results in subsequent decalcification of C-S-H that leads to changes in the cement strength and may lead to structural failure. At the boundary between waste forms and concrete vaults, the migration of sulfate ions from the salt waste form (e.g., the saltstone waste form used for LLW disposal at the Savannah River Site in Saltstone Disposal Units, or SDUs) into the barrier or vault concrete has been predicted to result in expansive mineral phase formation (or 'sulfate attack'). Expansive mineral formation could result in cracking and potential loss of structural integrity in the vault concrete. In the performance assessment (PA) for the SRS SDUs, prediction of both the carbonation and sulfate attack fronts are critical to assessing the long-term performance of these LLW disposal vaults. A general purpose geochemical reactive transport model has been developed in LeachXS/ORCHESTRA to evaluate typical interfaces for LLW disposal environments, including SDUs at SRS. The model may be used to predict the long-term performance of interfaces between cementitious materials and saltstone or backfill materials with respect to primary phases by considering mass transport, cement chemistry, geochemical speciation, and multi-ionic diffusion over interfaces between different materials. The present study compares the performance and interactions between vault concrete and saltstone waste form for a representative SDU scenario. The materials were characterized using pH-dependence leaching test (EPA 1313) and semi-dynamic transport tests (EPA 1315) with test results used to parameterize the interface model. The development of a credible inter model provides an important basis for supporting future PAs where carbonation and sulfate attack are important aging and degradation mechanisms. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
NASA NTRS1996

Magnetopause Transects

A novel method is described for reconstruction of two-dimensional current-layer structures from measurements taken by a single spacecraft traversing the layer. In its present form, the method is applicable only to 2D magnetohydrostatic structures that are passively convected past the observing spacecraft. It is tested on a magnetopause crossing of the tangential-discontinuity type by the spacecraft AMPTE/IRM. The magnetic structures recovered include a magnetic island located between two X-type nulls as well as a magnetic 'worm hole' through which a bundle of weak magnetic flux appears to connect the magnetosphere and the magnetosheath.

Sonnerup, B. U. O↗
NASA NTRS1974

The surface geometry of inherited joint and fracture trace patterns resulting from active and passive deformation

Hypothetical models are considered for detecting subsurface structure from the fracture or joint pattern, which may be influenced by the structure and propagated to the surface. Various patterns of an initially orthogonal fracture grid are modeled according to active and passive deformation mechanisms. In the active periclinal structure with a vertical axis, fracture frequency increased both over the dome and basin, and remained constant with decreasing depth to the structure. For passive periclinal features such as a reef or sand body, fracture frequency is determined by the arc of curvature and showed a reduction over the reefmound and increased over the basin.

Podwysocki, M. H.↗
NASA NTRS2000

Sensor Needs for Advanced Life Support

Sensors and feedback systems are critical to life support flight systems and life support systems research. New sensor capabilities can allow for new system architectures to be considered, and can facilitate dramatic improvements in system performance. This paper will describe three opportunities for biosensor researchers to develop sensors that will enable life support system improvements. The first opportunity relates to measuring physical, chemical, and biological parameters in the Space Station Water Processing System. Measuring pH, iodine, total organic carbon, microbiological activity, total dissolved solids, or conductivity with a safe, effective, stable, reliable microsensor could benefit the water processing system considerably. Of special interest is a sensor which can monitor biological contamination rapidly. The second opportunity relates to sensing microbiological contamination and water condensation on the surface of large inflatable structures. It is the goal of large inflatable structures used for habitation to take advantage of the large surface area of the structure and reject waste heat passively through the walls of the structure. Too much heat rejection leads to a cold spot with water condensation, and eventually microbiological contamination. A distributed sensor system that can measure temperature, humidity, and microbiological contamination across a large surface would benefit designers of large inflatable habitable structures. The third opportunity relates to sensing microbial bioreactors used for waste water processing and reuse. Microbiological bioreactors offer considerable advantages in weight and power compared to adsorption bed based systems when used for long periods of time. Managing and controlling bioreactors is greatly helped if distributed microsensors measured the biological populations continuously in many locations within the bioreactor. Nitrifying bacteria are of special interest to bioreactor designers, and any sensors that could measure the populations of these types of bacteria would help the control and operation of bioreactors. J

Graf, John C.↗