Evaluation of the feasibility of a far-infrared laser based on intersubband transitions in GaAs quantum wells
The threshold current and quantum efficiency are calculated for an FIR injection laser based on intersubband transitions in GaAs single quantum wells. By considering the balance of gain against the free carrier and transverse optical phonon absorption, and the intersubband transition time, the wavelength dependence of the threshold current is calculated. For the wavelength range 50-120 microns, the required threshold currents are the lowest and have reasonable values of 1-10 kA/sq cm. The threshold quantum efficiency in that range is expected to be about 0.0001.