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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga 2 O 3 Schottky diodes

We demonstrate the epitaxial growth of tetragonal platinum monoxide (PtO) on MgO, TiO 2 , and β-Ga 2 O 3 single-crystalline substrates by ozone molecular-beam epitaxy. We provide synthesis routes and derive a growth diagram under which PtO films can be synthesized by physical vapor deposition. A combination of electrical transport and photoemission spectroscopy measurements, in conjunction with density functional theory calculations, reveal PtO to be a degenerately doped p-type semiconductor with a bandgap of E g ≈ 1.6 eV. Spectroscopic ellipsometry measurements are used to extract the complex dielectric function spectra, indicating a transition from free-carrier absorption to higher photon energy transitions at E ≈ 1.6 eV. Using tetragonal PtO as an anode contact, we fabricate prototype Schottky diodes on n-type Sn-doped β-Ga 2 O 3 substrates and extract Schottky barrier heights of ϕ B > 2.2 eV.

Hensling, Felix V. E. [Cornell Univ., Ithaca, NY (↗
NASA NTRS1982

Molecular-beam sampling study of extinguishment of methane-air flames by dry chemicals

The use of Al2O3, NaHCO3, KHCO3, NH4H2PO4 and KCl powders for the inhibition of a methane/oxygen diffusion flame is studied through measurement of composition and temperature profiles, using a molecular beam mass spectrometer sampling system. In order to obtain significant inhibition without extinguishing the flame, a powder feeding rate of 2 mg/liter of gas was used for KCl and Al2O3, and of 3 mg/liter of gas for the remaining powders. CH4, O2, N2, H2O and CO2 concentrations were measured by the mass spectrometer, while temperature was measured by the time-of-flight technique. For the powder feeding rates used, Al2O3 was the least and KCl and NH2H4PO2 the most effective in reducing temperature; in reaction-inhibition effectiveness, Al2O3 was again lowest while KCl was superior to all others. Because the KCl concentration was only 2/3 that of NH4H2PO4, it is recommended as the most effective temperature reducer and reaction inhibitor.

Knuth, E. L.↗
DOE OSTI2025

Experimental and theoretical investigation of the crystalline surface, film, and interface properties of antiperovskite Mn 3 GaN grown by molecular beam epitaxy on MgO(001)

Here, we present a study of the epitaxial growth, characterization, and theoretical modeling of thin film antiperovskite Mn 3 GaN, an antiferromagnetic material with kagome structure which is grown on MgO (001) substrates using N-plasma-assisted molecular beam epitaxy. Reflection high energy electron diffraction is used to assess the in-plane evolution of the film structure during growth, and the surface is investigated in-situ using scanning tunneling microscopy and Auger electron spectroscopy. These results are combined with precision measurements done ex-situ determining the film lattice constants using a combination of x-ray diffraction with reciprocal space mapping and scanning transmission electron microscopy. Overall, a uniform, homogeneous film with an atomically smooth vacuum surface and atomically sharp substrate interface is found having very small in-plane tensile strain and mild out-of-plane compressive strain. First-principles theoretical calculations are applied in order to ascertain the lowest energy models for both the Mn 3 GaN surface and the Mn 3 GaN/MgO film/substrate interface. Models including MnGa versus MnN surface layers and MnGa versus MnN interfacial layers are considered as functions of both the Mn and Ga chemical potentials. The predictions are discussed in comparison to the experimental results. The overall findings suggest that Mn 3 GaN on MgO(001) is a viable epitaxial film which can be further explored in connection with antiferromagnetic spintronics.

Density functional theory↗
DOE OSTI2024

Utilizing Quantum Cascade Lasers for Ultranarrow Velocity Resolution and Quantum-State Selectivity in Molecular Beam Scattering and Spectroscopy

Here, we demonstrate the capability of a narrow linewidth quantum cascade laser (QCL) to selectively excite a very narrow velocity range of nitric oxide (σ ≤ 7(3) m/s) with a pure ro-vibrational quantum state. By implementing a counter-propagating geometry, the molecules are selectively excited according to the Doppler shift of the ro-vibrational transition frequency such that the velocity width associated with the excited molecules depends only on the QCL linewidth. We demonstrate a velocity distribution limited by the effective linewidth of our free-running QCL (Γ = 3.2 MHz). Our development provides a cost-effective, flexible approach to resolve quantum-state selective chemical dynamics with excellent velocity resolution in a wide variety of molecules with infrared-active transitions. This technique has been formulated to provide ultrahigh collisional energy resolution in molecular beams to delineate final quantum-state product pairs in studies of molecular collisions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Molecular beam epitaxy of PdO on MgO (001)

PdO, widely used in catalysis in powder form for decades, has been predicted recently to be a Dirac semimetal. Synthesis of high-quality single crystals of this material is thus of great interest. Here, by using ozone-assisted molecular beam epitaxy, PdO thin films were grown on a MgO (001) substrate. X-ray diffraction and transmission electron microscopy indicate the film is a / b axis oriented, with the c axis lying in plane. Fully oxygenated PdO films have a low density of holelike carriers, and are insulating at the lowest temperatures. Our density functional theory calculations using the Heyd-Scuseria-Ernzerhof exchange-correlation functional suggest a ~1.0 eV band gap at the M point, where the gap can be reduced by tensile strain along the c axis and the bands begin to invert when the tensile strain is as high as 18%. Although tensile strain of this magnitude is experimentally not viable using epitaxy, electrons can be doped by oxygen reduction. Finally, our results emphasize the need for careful consideration of electron correlation effects and stoichiometry in ab initio modeling of topological semimetals involving transition metal oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

N-polar aluminum nitride (AlN) is an important building block for next-generation high-power radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area, cost-effective N-polar AlN templates. Direct growth without any in situ surface cleaning leads to films with inverted Al polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity. The grown N-polar AlN epilayer with its smooth, pit-free surface duplicates the structural quality of the substrate, as evidenced by a clean and smooth growth interface with no noticeable extended defects generation. Near band-edge photoluminescence peaks are observed at room temperature on samples with MBE-grown layers but not on the bare AlN templates, implying the suppression of nonradiative recombination centers in the epitaxial N-polar AlN.

42 ENGINEERING↗
NASA NTRS1992

A molecular beam mass spectrometric study of the formation and photolysis of C(lc)lO dimer

A study of the chlorine oxides present at temperatures and pressures typical of the Antarctic stratosphere was carried out. A series of low temperature flow reactors was constructed and used in conjunction with molecular beam mass spectrometric techniques to identify species and characterize their kinetic behavior at temperatures of -20 to -70 C and pressures of from 30 to 130 Torr. It was found that the gas phase chlorine-oxygen system was quite complex at low temperatures. ClO dimer was identified and found to be thermodynamically very stable under stratospheric conditions. It was also found that any system which contained ClO also contained a larger oxide. The oxide was identified as Cl2O3. A survey of possible higher oxides, which have been postulated as possible chlorine sinks in the stratosphere, was also carried out. The rate of formation of ClO dimer was measured as a function of temperature and pressure. Measurements were made of both the decay of ClO and the formation of the dimer. By comparing these rates it was determined that virtually all of the ClO was converted to the dimer under stratospheric conditions, and that the other ClO reactions were not important under these conditions.

Greene, Frank T.↗
NASA NTRS1968

Time-of-flight velocity analysis of atomic and molecular beams

Conditions required for resolving a given beam speed distribution were evaluated by calculating the time-of-flight (TOF) signal for a finite open time of the beam shutter. Design criteria for a beam chopper and detection system are discussed in terms of the resolution, the range of speeds to be measured, and the optimum signal to noise ratio. A TOF system for detection of high intensity molecular beams with large speed ratios, as well as for low intensity scattered beams, is described. Experimental results are presented.

Hagena, O. F.↗
DOE OSTI2021

Statistical Correlation Between Quantum Entanglement and Spin–Orbit Coupling in Crossed Beam Molecular Dynamics

Non-classical features like interference are already being harnessed to control the output of chemical reactions. However, quantum entanglement which is an equally enigmatic many-body quantum correlation can also be used as a powerful resource yet has eluded explicit attention. In this report, an experimental scheme under the crossed beam molecular dynamical setup, with the F + HD reaction, is proposed aiming to study the possible influence of entanglement within reactant pairs on the angular features of the product distribution. The aforesaid reaction has garnered interest recently, as an unusual horseshoe shape pattern in the product (HF) distribution was observed, which has been attributed to the coupling of spin and orbital degrees of freedom. An experimental scheme is proposed aiming to study the possible influence of entanglement on the necessity for the inclusion of such spin–orbit characteristics, under circumstances wherein the existence of entanglement and spin–orbit interaction is simultaneously detectable. The attainable results are further numerically simulated highlighting specific patterns corresponding to various possibilities. Finally, such studies if extended can provide unforeseen mechanistic insight into analogous reactions, too, from the lens of quantum information.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1995

Molecular beam scattering from C-13 enriched Kapton and correlation with the EOIM-3 carousel experiment

Mass spectra of products emerging from identical samples of a C-13-enriched polyimide polymer (chemically equivalent to Kapton) under atomic oxygen bombardment in space and in the laboratory were collected. Reaction products unambiguously detected in space were CO-13, NO, (12)CO2, and (13)CO2. These reaction products and two others, H2O and CO-12, were detected in the laboratory, along with inelastically scattered atomic and molecular oxygen. Qualitative agreement was seen in the mass spectra taken in space and in the laboratory; the agreement may be improved by reducing the fraction of O2 in the laboratory molecular beam. Both laboratory and space data indicated that CO and CO2 products come preferentially from reaction with the imide component of the polymer chain, raising the possibility that the either component may degrade in part by the 'evaporation' of higher molecular weight fragments. Laboratory time-of-flight distributions showed: (1) incomplete energy accommodation of impinging O and O2 species that do not react with the surface; and (2) both hyperthermal and thermal CO and CO2 products, suggesting two distinct reaction mechanisms with the surface.

Minton, Timothy K.↗
NASA NTRS1993

Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy

By incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface, we have successfullydemonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors. The extended cutoffwavelengths resulted from the reduced effective potential barriers due to the combined effects of anincreased electric field near the silicide/Si interface and the Schottky image force. The p+ dopingspikes were grown by molecular beam epitaxy at 450 degrees C using elemental boron as the dopantsource, with doping concentrations ranging from 5 x 10^(19) to 2 x 10^(20) cm^(-3). The cutoffwavelengths were shown to increase with increasing doping concentrations of the p+ spikes. Thermionic emission dark current characteristics were observed and photoresponse in the LWIRregime was demonstrated. Furthermore, the effective potential barriers determined by the Richardsonplots were used to study the electrically activated boron dopant concentrations of the thin (1-nm-thick) spikes.

del Castillo, H. M.↗
DOE OSTI2020

Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO 3 (111)

Materials with Kagome layers are expected to give rise to rich physics arising from band structures with topological properties, spin liquid behavior, and the formation of Skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on the (111) oriented LaAlO3 substrate. Both in situ and ex situ characterizations indicate that these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. The films grow as disconnected islands, with lateral dimensions on the micron meter scale. By patterning Pt electrodes using a focused electron beam, the longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Molecular beam epitaxy of phase-pure antiperovskite Sr 3 SnO thin films

The antiperovskite oxide Sr 3 SnO has attracted substantial interest due to its topologically non-trivial band structure. Sr-deficient Sr3-xSnO can become superconducting, making it a candidate intrinsic topological superconductor. Here, we show that epitaxial, phase-pure Sr 3-x SnO films can be synthesized by molecular beam epitaxy (MBE) using solid Sr and SnO 2 sources. Here, we show that Sn-rich growth conditions result in a large amount of a Sn-rich impurity phase, which is challenging to detect in x-ray diffraction. Carrier densities and the amount of the impurity phase change systematically with the growth conditions, indicating that MBE provides excellent control over the films' stoichiometry. We discuss the electrical properties, including quantum interference phenomena, which support the topological nature of the films.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Engineering shallow and deep level defects in $\kappa$-Ga 2 O 3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

Orthorhombic gallium oxide (κ-Ga 2 O 3 ) is an ultra-wide bandgap semiconductor with great potential in new generation electronics. Its application is hindered at present by the limited physical understanding of the relationship between synthesis and functional properties. This work discusses the effects of growth method (metal-organic vapour phase epitaxy and molecular beam epitaxy) as well as annealing treatments in different atmospheres (O 2 , H 2 ) on point defects in κ-Ga 2 O 3 layers epitaxially grown on c-plane sapphire. Comprehensive experimental characterization by X-ray diffraction, photo current-as well as photoluminescence excitation spectroscopy, and X-ray photo electron spectroscopy is combined with first principles calculations of the point defects’ formation and complex-dissociation energies. We demonstrate that for κ-Ga 2 O 3 the concentration of shallow and deep level defects can be sensitively controlled through annealing treatments at temperatures (T = 500 °C) well below the thermal stability threshold of this polymorph. In particular, our results suggest that hydrogen-related defects (e.g., H-interstitials, Ga-vacancies—H complexes) play a key role in this process. While we provide direct exemplary implications of our results for the performances of κ-Ga 2 O 3 based photodetectors, these findings are predicted to impact further application fields of κ-Ga 2 O 3 , such as high electron mobility transistors or memory devices.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111)

Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p(+) layer to 0.89 eV for a sample with a 20-nm-thick p(+) layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.

Fathauer, R. W.↗
NASA NTRS1992

Surface morphology of molecular-beam epitaxially grown Si(1-x)Ge(x) layers on (100) and (110) Si

The surface morphology and dislocation structure of Si(1-x)Ge(x) layers grown on (100) and (110) Si substrates have been investigated using atomic force microscopy, and scanning and transmission electron microscopy. The layers, which have up to a 1.2 percent lattice mismatch with the substrates, were grown by molecular-beam epitaxy at 550 C at thicknesses above those required for the introduction of dislocations. Si(1-x)Ge(x) layers grown on (100) show a crosshatch morphology which is correlated to the underlying misfit dislocation network. Annealing greatly enhances the surface roughness producing a partial islanding growing on the preexisting crosshatch morphology. On the (110) substrates no annealing is necessary to produce a roughened surface. The roughened surface morphology is analyzed as a strain-reducing growth mode which enables partial relaxation of the near-surface atomic planes.

Pike, W. T.↗
DOE OSTI2022

A crossed molecular beams and computational study on the unusual reactivity of banana bonds of cyclopropane (c-C 3 H 6 ; X 1 A$^{'}_{1}$ ) through insertion by ground state carbon atoms (C( 3 P j ))

The mechanism and chemical dynamics of the reaction of ground electronic state atomic carbon C( 3 P j ) with cyclopropane c-C 3 H 6 (X 1 A$^{'}_{1}$) have been explored by combining crossed molecular beams experiments with electronic structure calculations of the pertinent triplet C 4 H 6 potential energy surface and statistical computations of product branching ratios under single-collision conditions. The experimental findings suggest that the reaction proceeds via indirect scattering dynamics through triplet C 4 H 6 reaction intermediate(s) leading to C 4 H 5 product(s) plus atomic hydrogen via a tight exit transition state, with the overall reaction exoergicity evaluated as 231 ± 52 kJ mol –1 . The calculations indicate that C( 3 P j ) can easily insert into one of the three equivalent C–C ‘banana’ bonds of cyclopropane overcoming a low barrier of only 2 kJ mol –1 following the formation of a van der Waals reactant complex stabilized by 15 kJ mol –1 . The carbon atom insertion into one of the six C–H bonds is also feasible via a slightly higher barrier of 5 kJ mol –1 . Here, these results highlight an unusual reactivity of cyclopropane's banana C–C bonds, which behave more like unsaturated C–C bonds with a π-character than saturated σ C–C bonds, which are known to be generally unreactive toward the ground electronic state atomic carbon such as in ethane (C 2 H 6 ). The statistical theory predicts the overall product branching ratios at the experimental collision energy as 50% for 1-butyn-4-yl, 33% for 1,3-butadien-2-yl, i-C 4 H 5 , and 11% for 1,3-butadien-1-yl, n-C 4 H 5 , with i-C 4 H 5 (230 kJ mol –1 below the reactants) favored by the C–C insertion providing the best match with the experimentally observed reaction exoergicity. The C( 3 P j ) + c-C 3 H 6 reaction is predicted to be a source of C 4 H 5 radicals under the conditions where its low entrance barriers can be overcome, such as in planetary atmospheres or in circumstellar envelopes but not in cold molecular clouds. Both i- and n-C 4 H 5 can further react with acetylene eventually producing the first aromatic ring and hence, the reaction of the atomic carbon with c-C 3 H 6 can be considered as an initial step toward the formation of benzene.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Optimization of the Growth of the Van der Waals Materials Bi 2 Se 3 and (Bi 0.5 In 0.5 ) 2 Se 3 by Molecular Beam Epitaxy

The naturally existing chalcogenide Bi 2 Se 3 is topologically nontrivial due to the band inversion caused by the strong spin-orbit coupling inside the bulk of the material. Here, the surface states are spin polarized, protected by the time-inversion symmetry, and thus robust to the scattering caused by nonmagnetic defects. A high-purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates to enable novel electronics, optics, and spintronics applications. However, the unique surface state properties have historically been limited by the film quality, which is evaluated by crystallinity, surface morphology, and transport data. Here we propose and investigate different MBE growth strategies to improve the quality of Bi 2 Se 3 thin films grown by MBE. Based on the surface passivation status, we have classified the substrates into two categories, self-passivated or unpassivated, and determine the optimal growth mechanisms on the representative sapphire and GaAs, respectively. For Bi 2 Se 3 on GaAs, the surface passivation status determines the dominant growth mechanism. In the end, growths of the topological trivial insulator (Bi 0.5 In 0.5 ) 2 Se 3 (BIS) on GaAs are investigated following the protocols proposed.

36 MATERIALS SCIENCE↗