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At least 217 records · Page 12

Dynamic Modeling of Power Conversion Stages for an Exascale Supercomputer

In this paper a power conversion and energy consumption model for an exascale supercomputer is investigated. Power consumption, energy loss and efficiency are derived for the 27.2 MW liquid-cooled, centralized, High Performance Computing (HPC) power system, which is supplied directly from the 480 V three-phase mains. Two energy conversion stages are analyzed, measured and modeled. The model is developed in order to be adapted and implemented in a digital twin platform utilizing a Resource Allocator and Power Simulator (RAPS) module. RAPS enables estimation of potential energy savings in the direct AC power supply architecture via both conventional rectifier load sharing (commonly used in HPC systems), as well as smart rectifier load sharing. Moreover, besides the direct AC supply architecture analysis, the full direct DC supply architecture with with 1 kV DC bus were also studied. Comparison of 10 hour time frame operation of the system, with direct 480 V AC voltage supply with conventional and smart load sharing and medium dc voltage supply were done. For the direct AC supply architecture, with conventional and smart load sharing the predicted power loss was approximately 840 kW and 820 kW, respectively and the predicted total system efficiency was 92.87% and 93.05%, respectively. For the direct DC supply architecture with the 1000 V DC supply bus power loss was approximately 340 kW and the predicted total system efficiency was 97.02%.

Wojda, Rafal↗

High Power Density Cost-Effective MVDC Aircraft Cable

To make the power density of electric aircraft closer to conventional aircraft, an electric power system (EPS) with high power delivery and low system mass is necessary. As an essential component of aircraft EPS, cables are necessary to transmit power from one node to another. Virginia Tech will design high-power density, cost-effective ±5 kV cables for twin-aisle all-electric aircraft. Innovations include conductors with increased current-carrying capacity and a multilayer, multifunctional insulation system made of exceptionally high thermal conductivity materials. Designed for DC voltage, the new insulator will allow fewer partial discharge events and provide improved electromagnetic interference protection.

42 ENGINEERING↗

Solid-State Transformer and Hybrid Transformer With Integrated Energy Storage in Active Distribution Grids: Technical and Economic Comparison, Dispatch, and Control

Solid-state transformer (SST) and hybrid transformer (HT) are promising alternatives to the line-frequency transformer (LFT) in smart grids. The SST features medium-frequency isolation, full controllability for voltage regulation, reactive power compensation, and the capability of battery energy storage system (BESS) integration with multiport configuration. The HT has a partially-rated converter for fractional controllability and can integrate a small BESS. Fast grid-edge voltage fluctuations from increased solar photovoltaic (PV) and electric vehicle (EV) penetration are difficult to manage for mechanical load tap changers. Hence, along with the trend towards more BESS in the grid, the controllability and the storage integration capability of the SST and HT are of strong interest. However, a review of literature shows existing SST and HT research is mostly at converter level, while system-level assessments are scarce. Assessing technical and economic impacts is critical to understanding the benefits and role of the SST and HT to guide future research, which is presented for the first time in this article. Experimental results from medium-voltage (MV) SST and MV HT prototypes are shown to confirm equipment-level feasibility, where the voltage controllability waveforms of a MV HT prototype are reported for the first time. Comparative simulations are performed on a modified IEEE 34-bus system. Here, a grid-model-less decentralized grid-edge voltage control method and a day-ahead BESS dispatch method are proposed for the SST and HT. The simulations show that the SST and HT with integrated storage can host more PV, achieve peak shaving, mitigate voltage fluctuation and reverse power flow, and support energy arbitrage for operational cost reduction, as compared to the LFT. Moreover, comprehensive analyses of net present value (NPV) and internal rate of return (IRR) are performed under different installed PV capacities, HT’s partial converter ratings, and BESS capacities. Sensitivities to future cost reductions of the PV and BESS are studied. Although the NPV and IRR are currently negative, 60% capital cost reduction or 150% revenue increase will make the SST and HT economically viable in the use case studied.

14 SOLAR ENERGY↗

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Developing More Efficient Wind Turbines: A Survey of Control Challenges and Opportunities

Wind energy has received considerable attention during the past two decades, owing to its vital role in battling both the energy crisis and global climate change. Wind energy has grown to become the most significant nonconventional renewable energy source. Today, modern wind turbines (WTs) are controlled to offer several functionalities that improve their flexibility at a level similar to conventional power sources. However, until now, there have been few reports in the literature summarizing and listing WT control concepts to encourage industry and academia to pursue improvements in developing more efficient WTs and bridge the gap between businesses and universities. Hence, this article focuses on a thoughtful investigation into developing better and more efficient WTs, detailing different issues involved in wind energy generation, such as WT components, control systems, operational modes, and, especially, new research and development trends.

17 WIND ENERGY↗

NREL Overview of Grid-Tied Power Electronics

This presentation focuses on the power electronics related research efforts carried out by researchers at the Power Systems Engineering Center at NREL.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Power Electronics as an Enabler of the Current and Future Grid: Control Instead of Copper

Power electronics are becoming more pervasive in the power system. Solar, wind and battery energy storage systems regularly connect to the grid using power electronic interfaces. Loads are also increasingly power electronic-based. These changes, coupled with the change in the power system's operating characteristics as more and more renewable energy is integrated into the power system, offer a challenge to power electronic and power system engineers alike - how do we design and operate the power system moving forward?

direct connect↗

Modeling and Control of Cascaded Bridgeless Multilevel Rectifier Under Unbalanced Load Conditions

The goal of this project is to model and control a novel unidirectional cascaded multilevel bridgeless rectifier as an active front end in medium and high voltage applications. This topology has many advantages over a conventional cascaded H-bridge rectifier, such as lower implementation cost, higher reliability, and greater flexibility with similar power quality.The steady-state mathematical model is used to develop a method for the voltage balancing of dc cells. Power factor analysis is discussed to achieve unity power factor using fully controlled hbridge cells. Power loss, efficiency, and cost comparison studies between the traditional cascaded H-Bridge converter and the proposed bridgeless converter demonstrate the advantages. A novel control strategy is proposed to achieve dc voltage balancing, fast and robust grid synchronization and power factor correction under unbalanced load conditions. Simulation and experimental results validate the models and control method.

Cascaded Bridgeless Rectifier, Power factor analys↗

Modular Multilevel Converter (MMC) Modeling Considering Submodule Voltage Sensor Noise

The modular multilevel converter (MMC) is a popular topology in medium- and high-voltage applications, and many efforts have been spent on MMC modeling. However, the impact of submodule voltage sensor noise (SVSN), which becomes more severe due to increasing switching speed of power semiconductors and compact submodule design, has not been considered in conventional models. In this letter, the SVSN is introduced by coupling capacitances between the sensor and power stage in an MMC switching model. Furthermore, the SVSN impact is considered in an MMC average model based on derivation of the relationship between the SVSN and the duty cycle. Here, the proposed MMC switching model and average model considering the SVSN are validated by comparing simulations with experimental results in an MMC prototype using 10-kV SiC MOSFETS.

47 OTHER INSTRUMENTATION↗

Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography

A novel high energy implantation system has been successfully developed to fabricate 4H-SiC superjunction devices for medium and high voltage via implantation of dopant atoms with multi-energies ranging from 13 to 66 MeV. The significantly higher levels of energy used compared to conventional implantation processes, necessitates detailed characterization of the lattice damage caused by implantation. To achieve this by employing the novel high energy system, 4H-SiC wafer with 12 μm epilayers were blanket implanted by 13.8–65.7 MeV Al atoms. The lattice damages induced by the implantation were primarily characterized by Synchrotron X-ray Plane Wave Topography (SXPWT) and Reciprocal Space Mapping (RSM). Topographs reveal fringe contrast akin to multiple asymmetric diffraction peaks with an angular separation of only 2″ (arcseconds) observed on rocking curves, indicating inhomogeneous strain distribution across the implanted layer. The strain profile of the implanted layer was extracted from the fringe contrast by applying Rocking-curve Analysis by Dynamical Simulation (RADS). In conclusion, the maximum strain value is similar to that measured on the RSM.

A1. Characterization↗

Effect of Semiconducting Layer on Cable Insulation Damage Detection Using Surface Wave Reflectometry

This paper presents a study of the effect of the semiconducting layer present in medium and high voltage cables on surface wave propagation and its feasibility in detecting insulation damage on cables. Simulation studies were conducted using Ansys High Frequency Structure Simulator (HFSS). It was observed that attenuation increased with thicker semiconducting layer and higher conductivity of the layer. For instance, on a 24.4 mm diameter power cable, the electric field strength associated with a 1 GHz surface wave declines with distance and fades away after 30 m when a 2 mm thick semiconducting layer is present. More results as a function of semiconducting layer thickness, material conductivity and permittivity, distance of a damaged section, etc. will be presented.

reflectometry, unshielded power cable, semiconduct↗

Unleash Values From Grid-Edge Flexibility: An Overview, Experience, and Vision for Leveraging Grid-Edge Distributed Energy Resources to Improve Grid Operations

The power system landscape is presently undergoing a dramatic change with the rapid integration of numerous distributed energy resources (DERs) at the grid edge. Broadly, we consider grid-edge DERs as any electricity source, storage, and demand response program connected to the medium-to-low-voltage distribution system.

distributed energy resource↗

Design Paradigm for Modular Multilevel Converter-Based Generator Rectifier Systems

Modular Multilevel Converters (MMC) are being widely considered for medium to high voltage DC applications. Designing such converters through multi-objective optimization is of interest because such an approach allows the trade-off between competing objectives (for example mass and loss) to be explicitly and quantitatively identified. In this work, an optimization based design paradigm for MMC based generator rectifier systems is proposed. Such development typically requires detailed component design and simulation models for the electric machine and converter which are computationally expensive. As an alternative, the proposed work utilizes an electric machine metamodel, inductor metamodel, and high-speed steady-state simulation model for the MMC to facilitate multi-objective optimization minimizing system metrics of interest while satisfying system constraints. A case study is undertaken to demonstrate the functionality of the proposed design paradigm.

42 ENGINEERING↗

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗

Modeling and control of cascaded bridgeless multilevel rectifier under unbalanced load conditions

The goal of this project is to model and control a novel unidirectional cascaded multilevel bridgeless rectifier as an active front end in medium and high voltage applications. This topology has many advantages over a conventional cascaded H-bridge rectifier, such as lower implementation cost, higher reliability, and greater flexibility with similar power quality. The complete design process of the proposed converter is developed step by step in order to meet all the desired objectives. The steady-state mathematical model is used to develop a method for the voltage balancing of dc cells. Power factor analysis is discussed to mathematically derive requirements for the number of partially controlled and fully controlled H-bridges in the proposed H-bridge converter. Power loss, efficiency, and cost comparison studies between the traditional cascaded H-Bridge converter and the proposed bridgeless converter demonstrate the advantages. After exploring various well-established control methods, a novel control strategy is proposed to achieve dc voltage balancing, fast and robust grid synchronization, power factor correction, and elimination of zero crossing current distortion under both balanced and unbalanced load conditions. The converter can also be used for reactive power compensation in a grid tied power system if a sufficient number of fully controlled H-bridge modules are included. Processor-In-the-Loop (PIL) simulation has been the utilized to validate the performance of discrete control structure. Simulation and experimental results validate the models and control method.

24 POWER TRANSMISSION AND DISTRIBUTION↗