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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Fuel recycling control in long pulse operation with full tungsten divertors in EAST tokamak

Fuel recycling control in long pulse discharges is studied in EAST tokamak with tungsten divertors by particle balance. Double null configuration, proper Resonant Magnetic Perturbation (RMP), divertor cryopumps and realtime lithium injection, are all very effective for recycling control. High heating power discharge leads to low recycling due to the enhancement of particle exhausting. High external gas injection is required in a low fuel recycling discharge to keep a constant density, and Dα emission is increased by external injection, therefore a higher Dα emission may indicate low fuel recycling for the same plasma density. Reproducible long pulse discharges of over 100 s with core electron temperature >10 keV, and 1056 s discharge with ~1.5 MW heating power were obtained in the EAST 2021 campaign, fuel recycling was well controlled by divertor cryopumps and realtime lithium injection. The results provide a valuable reference for the high power and long pulse operation in future fusion reactors, such as ITER and CFETR.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Small-Signal Stability Analysis of Low-Inertia Power Grids with Inverter-Based Resources and Synchronous Condensers: Preprint

With the potential environmental impacts of conventional fossil fuels and the technology advances of grid interactive power electronics, inverter-based resources (IBRs) are playing a crucial role in modern power grids. However, due to the lack of physical inertia, IBRs are vulnerable to system disturbances. Further, conventional grid-following (GFL) inverters cannot actively establish the frequency and voltage, which could not be a appropriate solution for 100% inverter-based power grids. Grid-forming (GFM) control, as an emerging inverter control function, has drawn great attention in recent years, while it is still under development and pre-mature for large-scale field deployment. A potential solution for gradually transitioning into a 100% inverter-based power grid is to combine both IBRs and synchronous machines into a mixed generation portfolio. More importantly, synchronous machines can be operated as synchronous condensers (SCs) until they are retired. It is also worth mentioning that the stability analysis is of great importance to ensure the smooth transition from existing power grids to 100% inverter-based system, which is the main focus of this work with detailed modeling and modal analysis.

100% renewable↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Mg:Ga 2 O 3 via Three-Step Synthesis Process

Gallium oxide (Ga 2 O 3 ) is being actively explored for electronics that can operate at high power, temperature, and frequency as well as for deep-ultraviolet optoelectronics and other applications due to its ultra-wide bandgap (UWBG) and low projected fabrication cost of large-size and high-quality crystals. Efficient n-type doping of monoclinic beta-phase of Ga 2 O 3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from the challenges of achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga 2 O 3 -based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a three-step growth-annealing-quench synthesis protocol for hydrogen-assisted Mg doping in ß-Ga 2 O 3 . The simulations take into account the gas phase equilibrium between H 2 , O 2 , and H 2 O, which determines the H chemical potential. We predict Ga 2 O 3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to Mg acceptor activation by H removal in GaN. For equilibrium annealing with re-equilibration of compensating O vacancies, there is an optimal temperature that maximizes the Ga 2 O 3 net acceptor density for a given Mg doping level; the acceptor density is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga 2 O 3 Fermi level drops below mid-gap down to about 1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral Mg Ga 0 acceptors. The resulting free hole concentration in Ga 2 O 3 is very low even at elevated operating temperature (~10 8 cm -3 at 400°C) due to the deep energy level of these Mg acceptors, and hole conductivity is further impeded by the polaron hopping mechanism. However, the Fermi-level reduction and suppression of free electron density in this doping-type converted (NA>ND) Ga 2 O 3 material are important for improved designs of Ga 2 O 3 electronic devices. These results illustrate the power of computational predictions not only for new materials but also for their synthesis science.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Compact, high-power superconducting radio-frequency accelerators for environmental applications

Electron-beam irradiation has been proven to destructively reduce or eliminate a wide variety of organic chemicals, viruses and bacteria from wastewater, as well as reducing sulfur and nitrous oxides emission from coal-fired power plants. It is estimated that there are approximately 30,000 such particle accelerators in use worldwide for industrial processes including surface and bulk processing of material, medical sterilization, and environmental remediation. Maximum beam power from accelerators used in these applications is currently limited to less than 500 kW, and a higher beam power is needed to reduce treatment costs. The market availability of continuous-wave (CW) electron-beam accelerators with power of the order of ~100 kW is also very limited. Superconducting radio-frequency (SRF) linear accelerators (linacs) are commonly used at basic research laboratories throughout the world due to their exceptionally high efficiency as compared to current industrial varieties. Recent advances in cryogenics, SRF thin films and high-power magnetrons allow for the design of increasingly compact and efficient CW SRF electron linacs in the energy range 1-10 MeV, with up to 1 MW of beam power. A new class of compact, high-efficiency electron-beam accelerators may provide cost-effective solutions for a range of industrial and environmental remediation applications, particularly with respect to tackling one such class of contaminants so-called “forever chemicals”, including per- and polyfluoroalkyl substances (PFASs), which are ubiquitous in a wide range of products and for which there is currently no effective destruction technology. We have recently demonstrated the key technologies required for such accelerators by: 1) operating a Nb3Sn SRF accelerating cavity cooled by commercial cryocoolers up to an accelerating gradient of 12.4 MV/m and 2) demonstrating the phase-locking as well as a high-efficiency power combining scheme for industrial magnetron transmitters. In this presentation, we will introduce the principles and benefits of MW-class SRF linacs, based on the conduction-cooled SRF technology that we have demonstrated for environmental remediation. We propose the development of a 4 MeV, 20 kW prototype to be built at Jefferson Lab as a first accelerator demonstrator unit. We will also present the results from samples study on the effect of electron-beam irradiation on so-called “forever chemicals” such as 1,4-dioxane and PFAS, using an existing multi-purpose 10 MeV, low-power, CW SRF linac at Jefferson Lab.

Ciovati, Gianluigi↗
DOE OSTI2020

Crystallization of ApoA1 and ApoE4 Nanolipoprotein Particles and Initial XFEL-Based Structural Studies

Nanolipoprotein particles (NLPs), also called “nanodiscs”, are discoidal particles with a patch of lipid bilayer corralled by apolipoproteins. NLPs have long been of interest due to both their utility as membrane-model systems into which membrane proteins can be inserted and solubilized and their physiological role in lipid and cholesterol transport via high-density lipoprotein (HDL) and low-density lipoprotein (LDL) maturation, which are important for human health. Serial femtosecond crystallography (SFX) at X-ray free electron lasers (XFELs) is a powerful approach for structural biology of membrane proteins, which are traditionally difficult to crystallize as large single crystals capable of producing high-quality diffraction suitable for structure determination. To facilitate understanding of the specific role of two apolipoprotein/lipid complexes, ApoA1 and ApoE4, in lipid binding and HDL/LDL particle maturation dynamics, and to develop new SFX methods involving NLP membrane protein encapsulation, we have prepared and crystallized homogeneous populations of ApoA1 and ApoE4 NLPs. Crystallization of empty NLPs yields semi-ordered objects that appear crystalline and give highly anisotropic and diffuse X-ray diffraction, similar to fiber diffraction. Several unit cell parameters were approximately determined for both NLPs from these measurements. Thus, low-background, sample conservative methods of delivery are critical. Here we implemented a fixed target sample delivery scheme utilizing the Roadrunner fast-scanning system and ultra-thin polymer/graphene support films, providing a low-volume, low-background approach to membrane protein SFX. This study represents initial steps in obtaining structural information for ApoA1 and ApoE4 NLPs and developing this system as a supporting scaffold for future structural studies of membrane proteins crystalized in a native lipid environment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Robust silane self-assembled monolayer coatings on plasma-engineered copper surfaces promoting dropwise condensation

Dropwise condensation is well known to result in better heat transfer performance owing to efficient condensate/droplet removal, which can be harnessed in various industrial heat/mass transfer applications such as power generation and conversion, water harvesting/desalination, and electronics thermal management. The key to enhancing condensation via the dropwise mode is thin low surface energy coatings (<100 nm) with low contact angle hysteresis. Ultrathin (<5 nm) silane self-assembled monolayers (or SAMs) have been widely studied to promote dropwise condensation due to their minimal thermal resistance and scalable integration processes. Such thin coatings typically degrade within an hour during condensation of water vapor. After coating failure, water vapor condensation transitions to the inefficient filmwise mode with poor heat transfer performance. We enhance silane SAM quality and durability during water vapor condensation on copper compared to state-of-the-art silane coatings on metal surfaces. We achieve this via (i) surface polishing to sub-10 nm levels, (ii) pure oxygen plasma surface treatment, and (iii) silane coating integration with the copper substrate in an anhydrous/moisture-free environment. The resulting silane SAM has low contact angle hysteresis (≈20°) and promotes efficient dropwise condensation of water for >360 hours without any visible sign of coating failure/degradation in the absence of non-condensable gases. We further demonstrate enhanced heat transfer performance (≈5-7× increase over filmwise condensation) over an extended period of time. Surface characterization data post-condensation leads us to propose that in the absence of non-condensable gases in the vapor environment, the silane SAM degrades due to reduction and subsequent dissolution of copper oxide at the oligomer-substrate interface. The experiments also indicate that the magnitude of surface subcooling (or condensation rate) affects the rate of coating degradation. Finally, this work identifies a pathway to durable dropwise promoter coatings that will enable efficient heat transfer in industrial applications.

42 ENGINEERING↗
DOE OSTI2021

Bio-inspired strategies for next-generation perovskite solar mobile power sources

Smart electronic devices are becoming ubiquitous due to many appealing attributes including portability, long operational time, rechargeability and compatibility with the user-desired form factor. Integration of mobile power sources (MPS) based on photovoltaic technologies with smart electronics will continue to drive improved sustainability and independence. With high efficiency, low cost, flexibility and lightweight features, halide perovskite photovoltaics have become promising candidates for MPS. Realization of these photovoltaic MPS (PV-MPS) with unconventionally extraordinary attributes requires new ‘out-of-box’ designs. Natural materials have provided promising designing solutions to engineer properties under a broad range of boundary conditions, ranging from molecules, proteins, cells, tissues, apparatus to systems in animals, plants, and humans optimized through billions of years of evolution. Applying bio-inspired strategies in PV-MPS could be biomolecular modification on crystallization at the atomic/meso-scale, bio-structural duplication at the device/system level and bio-mimicking at the functional level to render efficient charge delivery, energy transport/utilization, as well as stronger resistance against environmental stimuli (e.g., self-healing and self-cleaning). In this paper, we discuss the bio-inspired/-mimetic structures, experimental models, and working principles, with the goal of revealing physics and bio-microstructures relevant for PV-MPS. Here the emphasis is on identifying the strategies and material designs towards improvement of the performance of emerging halide perovskite PVs and strategizing their bridge to future MPS.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

The role of ETG modes in JET–ILW pedestals with varying levels of power and fuelling

Abstract We present the results of GENE gyrokinetic calculations based on a series of JET–ITER-like-wall (ILW) type I ELMy H-mode discharges operating with similar experimental inputs but at different levels of power and gas fuelling. We show that turbulence due to electron-temperature-gradient (ETGs) modes produces a significant amount of heat flux in four JET–ILW discharges, and, when combined with neoclassical simulations, is able to reproduce the experimental heat flux for the two low gas pulses. The simulations plausibly reproduce the high-gas heat fluxes as well, although power balance analysis is complicated by short ELM cycles. By independently varying the normalised temperature gradients ( ω T e ) and normalised density gradients ( ω n e ) around their experimental values, we demonstrate that it is the ratio of these two quantities η e = ω T e / ω n e that determines the location of the peak in the ETG growth rate and heat flux spectra. The heat flux increases rapidly as η e increases above the experimental point, suggesting that ETGs limit the temperature gradient in these pulses. When quantities are normalised using the minor radius, only increases in ω T e produce appreciable increases in the ETG growth rates, as well as the largest increases in turbulent heat flux which follow scalings similar to that of critical balance theory. However, when the heat flux is normalised to the electron gyro-Bohm heat flux using the temperature gradient scale length L T e , it follows a linear trend in correspondence with previous work by different authors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Ultrahigh-power-density flexible piezoelectric energy harvester based on freestanding ferroelectric oxide thin films

Flexible piezoelectric nanogenerators are emerging as a promising solution for powering next-generation flexible electronics by converting mechanical energy into electrical energy. However, traditional ferroelectric ceramics, despite their excellent piezoelectric properties, lack flexibility; while piezoelectric polymers, although highly flexible, have low piezoelectricity. The quest to develop materials that combine high piezoelectricity with exceptional flexibility has thus become a research focus. Herein, we present a breakthrough in this field with the fabrication of freestanding (111)-oriented PbZr 0.52 Ti 0.48 O 3 single crystalline thin films, which exhibit remarkable flexibility and a high converse piezoelectric coefficient (~585 pm/V). This is achieved through water-soluble sacrificial layer to relieve substrate clamping and controlling the crystal orientation to further enhance the piezoelectric response. Our nanogenerators, constructed using these freestanding nanoscale membranes, demonstrate a record-high output power density (~63.5 mW/cm 3 ), excellent flexibility (with a strain tolerance >3.4%), and superior mechanical stability in cycling tests (>60,000 cycles). These advancements pave the way for high-performance, flexible electronic devices utilizing ferroelectric oxide thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

4D Printing of Stretchable Supercapacitors via Hybrid Composite Materials

Stretchable supercapacitors (SCs) have attracted significant attention in developing power-independent stretchable electronic systems due to their intrinsic energy storage function and unique mechanical properties. Most current SCs are generally limited by their low stretchability, complicated fabrication process, and insufficient performance and robustness. This study presents a facile method to fabricate arbitrary-shaped stretchable electrodes via 4D printing of conductive composite from reduced graphene oxide, carbon nanotube, and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate. The electrode patterns of an arbitrary shape can be deposited onto prestretched substrates by aerosol-jet printing, then self-organized origami (ridge) patterns are generated after releasing the substrates from holding stretchers due to the mismatched strains. The stretchable electrodes demonstrate superior mechanical robustness and stretchability without sacrificing its outstanding electrochemical performance. The symmetric SC prototype possesses a gravimetric capacitance of ≈21.7 F g -1 at a current density of 0.5 A g -1 and a capacitance retention of ≈85.8% from 0.5 to 5 A g -1 . A SC array with arbitrary-shaped electrodes is also fabricated and connected in series to power light-emitting diode patterns for large-scale applications. Finally, the proposed method paves avenues for scalable manufacturing of future energy-storage devices with controlled extensibility and high electrochemical performance.

36 MATERIALS SCIENCE↗
DOE OSTI2026

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope integrators. They are capable of working from room to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated including several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as 0.11 erms of equivalent charge for 1200 samples. The channel-to-channel crosstalk was also characterized showing values better than -62 dB.

Alcalde Bessia, Fabricio↗
DOE OSTI2026

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope integrators. They are capable of working from room to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated including several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as 0.11 erms of equivalent charge for 1200 samples. The channel-to-channel crosstalk was also characterized showing values better than -62 dB.

Alcalde Bessia, Fabricio↗
DOE OSTI2024

Improving Cathode Testing with a High-Gradient Cryogenic Normal Conducting RF Photogun

Future electron accelerator applications such as X-ray free electron lasers and colliders are dependent on significantly increasing beam brightness. With the observation that linac beam manipulation’s best preservation of max brightness is at the cathode, we are incentivized to create an environment where we can study how to achieve the highest possible photogun brightness. In order to do so, we intend to extract beams from high-brightness photocathodes with the highest achievable accelerating gradients we can manage in a klystron-powered radiofrequency (RF) photogun. We utilize here cryogenic normal conducting cavities to achieve ultra-high gradients via limitation of breakdown rates (BDR). The low temperatures should also reduce cathode emittance by reducing the mean transverse energy (MTE) of electrons near the photoemission threshold. To this end, we have designed and produced a new CrYogenic Brightness-Optimized Radiofrequency Gun (CYBORG) for use in a new beamline at UCLA. We will introduce the enabling RF and photoemission physics as a primer for the new regime of high field low temperature cathodes we intend to enter. We further report the current status of the beamline commissioning, including the cooling of the photogun to 100 K, and producing 0.5 MW of RF feed power, which corresponds to cathode accelerating fields in the range of 80–90 MV/m. We further plan iterative improvements to both to 77 K and 1 MW corresponding to our ultimate goal >120 MV/m. Our discussion will include future beamline tests and the consideration of the initial realization of an ultra-high-gradient photoinjector concept.

Lawler, Gerard Emile (ORCID:0000000160113435)↗
DOE OSTI2021

Isotope dependence of the type I ELMy H-mode pedestal in JET-ILW hydrogen and deuterium plasmas

The pedestal structure, edge transport and linear MHD stability have been analyzed in a series of JET with the ITER-like wall hydrogen (H) and deuterium (D) type I ELMy H-mode plasmas. The pedestal pressure is typically higher in D than in H at the same input power and gas rate, with the difference mainly due to lower density in H than in D (Maggi et al (JET Contributors) 2018 Plasma Phys. Control. Fusion 60 014045). A power balance analysis of the pedestal has shown that higher inter-ELM separatrix loss power is required in H than in D to maintain a similar pedestal top pressure. This is qualitatively consistent with a set of interpretative EDGE2D-EIRENE simulations for H and D plasmas, showing that higher edge particle and heat transport coefficients are needed in H than in D to match the experimental profiles. It has also been concluded that the difference in neutral penetration between H and D leads only to minor changes in the upstream density profiles and with trends opposite to experimental observations. This implies that neutral penetration has a minor role in setting the difference between H and D pedestals, but higher ELM and/or inter-ELM transport are likely to be the main players. The interpretative EDGE2D-EIRENE simulations, with simultaneous upstream and outer divertor target profile constraints, have indicated higher separatrix electron temperature in H than in D for a pair of discharges at low fueling gas rate and similar stored energy (which required higher input power in H than in D at the same gas rate). The isotope dependence of linear MHD pedestal stability has been found to be small, but if a higher separatrix temperature is considered in H than in D, this could lead to destabilization of peeling-ballooning modes and shrinking of the stability boundary, qualitatively consistent with the reduced pedestal confinement in H.

08 HYDROGEN↗
DOE OSTI2023

Ultrawide bandgap vertical β-(Al x Ga1 −x )2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Ultrawide bandgap β-(AlxGa1−x)2O3 vertical Schottky barrier diodes on (010) β-Ga2O3 substrates are demonstrated. The β-(AlxGa1−x)2O3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 1017 cm−3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼109, a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm2. Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(AlxGa1−x)2O3 power electronics, RF electronics, and ultraviolet photonics.

Materials Science↗
DOE OSTI2023

Ga 4 C-family crystals, a new generation of star thermoelectric materials, achieved by band degeneracies, valley anisotropy, and strong phonon scattering among others

Using density functional theory combined with the Boltzmann transport equation, we uncover a new class of high-performance thermoelectric materials, i.e., supertetrahedral Ga 4 C-family materials characterized by an ultrahigh thermoelectric figure of merit (ZT), which is produced both by a large power factor and ultralow lattice thermal conductivity. The former is contributed by multiple electronic band degeneracies, flat bands and valley anisotropy, while the latter is contributed both by strong phonon scattering and low phonon group velocity. Furthermore, we find that tensile strain engineering may further suppress lattice thermal conductivity, while well retaining the multi-band degeneracies, valley anisotropy and flat bands. In addition to the band degeneracy, the scattering mechanism of the system can also dominate the power factor in the process of strain implementation. Consequently, a novel thermoelectric phenomenon, i.e., a high thermoelectric figure of merit, is observed in Ca 4 C with a ZT value larger than 4.4 under a small strain ratio (0.75%). In conclusion, our theoretical studies not only uncover a new class of high-performance thermoelectric materials integrating multiple effective mechanisms, but also establish a realistic material plateau to investigate the competitive effect of multiple factors on enhancing the thermoelectric figure of merit.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗