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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Quality Control of Silicon Sensor Modules for Particle Detectors

The High-Luminosity Large Hadron Collider (HL-LHC) will produce a higher rate of particle collisions than the current Large Hadron Collider (LHC), requiring important upgrades to the Compact Muon Solenoid (CMS) to handle an increased amount of data. An important upgrade is the Phase-2 Outer Tracker Upgrade, which consists of 13,000 silicon sensor modules made of two parallel silicon sensors and readout electronics. These modules undergo careful quality control checks both during and after module assembly to ensure precise and reliable detector performance. This project focuses on precision testing for quality control of silicon sensor modules at Fermilab. Hands-on work includes visual inspection, current-voltage testing, module testing, and ultraviolet (UV) light exposure of modules showing abnormal current-voltage behavior. The ultraviolet exposure process improves the abnormal sensor readout data by placing the selected sensor side of the module directly under the UV light inside a controlled box. In addition to laboratory testing and ultraviolet experiments, I developed a Python-based data tool that connects to a module database and allows selected testing conditions and module information to be retrieved and displayed efficiently. These different testing procedures, experimental processes, and computational tools support the broader goal of identifying module issues and improving modules that will be used in the CMS Outer Tracker Phase-2 Upgrade.

Siddiqui, Hooriya [DuPage Coll.] (ORCID:0009000151↗
DOE OSTI2026

Quality Control of Silicon Sensor Modules for Particle Detectors

The High-Luminosity Large Hadron Collider (HL-LHC) will produce a higher rate of particle collisions than the current Large Hadron Collider (LHC), requiring significant upgrades to the Compact Muon Solenoid (CMS) to handle the increased amount of data. An important upgrade is the Phase-2 Outer Tracker Upgrade, which consists of 13,000 silicon sensor modules made of two parallel silicon sensors and readout electronics. These modules undergo careful quality control checks both during and after module assembly to ensure precise and reliable detector performance. This project focuses on precision testing for quality control of silicon sensor modules at Fermilab. Hands-on work includes visual inspection, current-voltage testing, module testing, and ultraviolet (UV) light exposure of modules showing abnormal current-voltage behavior. The ultraviolet exposure process improves the abnormal sensor readout data by placing the selected sensor side of the module directly under the UV light inside a controlled box. In addition to laboratory testing and ultraviolet experiments, I developed a Python-based data tool that connects to a module database and allows selected testing conditions and module information to be retrieved and displayed efficiently. These different testing procedures, experimental processes, and computational tools support the broader goal of identifying module issues and improving modules that will be used in the CMS Outer Tracker Phase-2 Upgrade.

Siddiqui, Hooriya [DuPage Coll.; Fermilab] (ORCID:↗
DOE OSTI2022

Reduced Stochastic Resistive Switching in Organic-Inorganic Hybrid Memristors by Vapor-Phase Infiltration

We report resistive random-access memory (RRAM) is promising for next-generation data storage and non-von Neumann computing hardware. However, tuning device switching characteristics and particularly, controlling their stochastic variation remain as critical challenges. Here, new organic-inorganic hybrid RRAM media are reported whose bipolar switching characteristics and stochasticity can be controlled by vapor-phase infiltration (VPI), an ex situ hybridization technique derived from atomic layer deposition. Hybrid RRAMs based on AlO x -infiltrated SU-8 feature facile tunability of device switching voltages, off-state current, and on-off ratio by adjusting the amount of infiltrated AlO x in the hybrid. Furthermore, a significant reduction in the stochastic, cycle-to-cycle variations of switching parameters is enabled by AlO x infiltration, driven by the infiltration-induced changes in mechanical, dielectric, and chemical properties of organic medium and their influence on the dimension and formation characteristics of conductive filaments. Finally, multi-level analog switching potentially useful for neuromorphic applications are demonstrated, along with direct, one-step device patterning exploiting the negative-tone resist feature of SU-8. With the demonstrated control over switching characteristics and stochastic variation, combined with analog switching and one-step patterning capabilities, the results not only present a novel hybrid medium for RRAM applications but also showcase the utility of VPI for developing new, high-performance hybrid RRAM devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current

Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO 3 single-crystal substrates by solution reaction at a low temperature of ~200 o C. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm 2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm 2 , corresponding to the highest photoresponsivity of ~4.306×10 -3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Interfacial Engineering of Metal Chalcogenides‐based Heterostructures for Advanced Sodium‐Ion Batteries

Sodium-ion batteries (SIBs) have become one of the most promising candidates for large-scale energy storage applications. Metal chalcogenides anode materials based on alloying or conversion reactions are widely studied because of their high theoretical capacities and rich redox reactions. However, their intrinsic limitations such as high voltage hysteresis and large volume expansion hinder their further applications. The construction of heterostructures has become an attractive strategy to alleviate the above issues. Here, the formation of built in electric fields (BIEFs) at the heterointerfaces will accelerate the migration of Na + and electrons. Moreover, heterostructures can also enhance the structural stability, generate more active sites and provide additional capacity. It is worth noting that heterointerfacial properties play a significant role in promoting the overall electrochemical performance of the heterostructures. However, a systematic understanding of their interfacial engineering is currently lacking. This article reviews the research progress of metal chalcogenides-based heterostructure anode materials in the near term. First, the definition, classification and the roles of heterostructures are introduced. Second, the detailed research progress of the metal chalcogenide-based heterostructures anodes in SIBs is discussed. Finally, the future prospects and potential research directions of the heterostructures for batteries are discussed.

anode↗
DOE OSTI2022

Magnetic cores with high reluctance differences in flux paths

Embodiment of the present invention includes a magnetic structure and a magnetic structure used in a direct current (DC) to DC energy converter. The magnetic structure has an E-core and a plate, with the plate positioned in contact or in near contact with the post surfaces of the E-core. The E-core has a base, a no-winding leg, a transformer leg, and an inductor leg. The no-winding leg, the transformer leg, and the inductor leg are perpendicular and magnetically in contact with the base. The plate is a flat slab with lateral dimensions generally larger than its thickness. The plate has a plate nose that overlaps a top no-winding leg surface of the no-winding leg with a no-winding gap area to form a no-winding gap with a no-winding gap reluctance. The plate also has a plate end that overlaps a top inductor leg surface of the inductor leg with an inductor gap area to form an inductor gap with an inductor gap reluctance. In some embodiments, e.g., where the duty cycle is less than 50 percent, the inductor gap reluctance will be designed to be less than the no-winding gap reluctance. In these cases, the majority of the magnetic flux that passes through the transformer leg will return through the inductor leg, instead of through the no-winding leg. The inductor and no-winding gap reluctances can he adjusted, so that the electromotive force applied to a charge passing through the inductor will partially cancel the electromotive force applied by the transformer secondary. The gap reluctance ratio can be defined, so that the difference in secondary and inductor electromotive forces is equal to the output voltage defined by an optimal no-ripple duty cycle. In this way no changing current is required through the inductor to create a dI/dt inductive voltage drop across the output inductor. Zero output current ripple is achieved.Various embodiments of the plate, plate shape, and no-winding leg are disclosed. These embodiments allow achieving a high ratio of no-winding gap reluctance to inductor gap reluctance, for practical, affordable magnetic material structures and aspect ratios. A high gap reluctance ratio enables zero output current ripple for the high transformer turns ratios that are needed to achieve high input to output voltage ratios. The embodiments therefore allow achieving low output current ripple for 48 V or higher input voltages, 1 V or lower output voltages, and high output currents.

Yao, Yuan↗
DOE OSTI2022

Techno-economic analysis of non-aqueous hybrid redox flow batteries

Renewable energy has become indispensable to improving human life, but its growth is hampered by a lack of cost-effective energy storage systems to solve the intermittency problem. Non-aqueous hybrid redox flow batteries (NAqHRFBs), based on lithium metal anode and organic redox molecules (redoxmers), have been investigated as an attractive energy storage option because of their high cell voltages and energy densities compared to other redox flow battery candidates. However, little is known about the economic potential of NAqHRFBs, as well as the operational and materials impacts. This research establishes a techno-economic model to analyze the capital costs of NAqHRFBs with selected organic redoxmers, including 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO). Sensitivity analyses for current density, area-specific resistance, cell voltage, electrolyte composition, redoxmer price, and equivalent molecular weight indicate the key factors in controlling NAqHRFB capital cost. To make the current NAqHRFB cost-effective, the first priority is to increase the operation current density over 10 times of those used in lab-scale tests, followed by adjusting redoxmer-related characteristics to afford more cost reduction space such as decreasing the unit price by ~20 fold. The results have shed light on potential material development and system engineering directions to make NAqHRFBs viable for renewable energy storage.

25 ENERGY STORAGE↗
DOE OSTI2022

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Submodule-Level Decentralized Control for Cascaded Quadruple Active Bridge-Based Medium-Voltage Converters

High-power, low-voltage DC (LVDC) loads, such as AI data centers, electric vehicle fast-charging hubs, and hydrogen electrolyzers, are accelerating the deployment of solid-state transformers (SSTs) that directly interface medium-voltage AC (MVAC) to LVDC, streamlining power delivery. This paper proposes a submodule-level decentralized control strategy for an SST comprising a cascaded H-bridge (CHB) active rectifier on the MVAC side and per-module quadruple-active-bridge (QAB) converters on the LVDC side with local controllers. The proposed strategy eliminates the need for high-fidelity, real-time cross-isolation communication by synchronizing all active bridges to a common heartbeat signal and enabling the primary- and secondary-side controllers to generate independent local control signals (phase shifts). The resultant phase shifts naturally govern average and double-line frequency power transfer between active bridges, enabling each side to meet its control objectives using only local measurements. Detailed controller design considerations are presented based on a stability analysis. Comprehensive electromagnetic-transient simulations demonstrate tight DC-link voltage regulation, high-quality grid currents, and robust operation under load transients and grid disturbances, without real-time communication among the submodule controllers. These results indicate that the proposed scheme can significantly enhance the reliability, scalability, and flexibility of cascaded bridge-based medium-voltage converters.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Submodule-Level Decentralized Control for Cascaded Quadruple Active Bridge-Based Medium-Voltage Converters: Preprint

High-power, low-voltage DC (LVDC) loads, such as AI data centers, electric vehicle fast-charging hubs, and hydrogen electrolyzers, are accelerating the deployment of solid-state transformers (SSTs) that directly interface medium-voltage AC (MVAC) to LVDC, streamlining power delivery. This paper proposes a submodule-level decentralized control strategy for an SST comprising a cascaded H-bridge (CHB) active rectifier on the MVAC side and per-module quadruple-active-bridge (QAB) converters on the LVDC side with local controllers. The proposed strategy eliminates the need for high-fidelity, real-time cross-isolation communication by synchronizing all active bridges to a common heartbeat signal and enabling the primary- and secondary-side controllers to generate independent local control signals (phase shifts). The resultant phase shifts naturally govern average and double-line frequency power transfer between active bridges, enabling each side to meet its control objectives using only local measurements. Detailed controller design considerations are presented based on a stability analysis. Comprehensive electromagnetic-transient simulations demonstrate tight DC-link voltage regulation, high-quality grid currents, and robust operation under load transients and grid disturbances, without real-time communication among the submodule controllers. These results indicate that the proposed scheme can significantly enhance the reliability, scalability, and flexibility of cascaded bridge-based medium-voltage converters.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

DEVELOPMENT OF STABLE ANODE AND CATHODE MATERIALS FOR RECHARGEABLE BATTERIES

Batteries have been employed in a variety of applications, such as portable electronics, electric vehicles (EVs), and stationary energy storage to preserve energy from other renewable sources (like wind or solar energy). The ultimate goal is to develop high energy density, long life span, better safety, and low cost of the batteries. However, current commercialized batteries (like lead-acid, zinc-alkaline, lithium-ion batteries (LIBs)) could not fulfill all the demands of diversified applications. LIBs predominate the market because of their high energy density. To achieve a higher capacity of the cell, high-nickel layered (Ni > 90%) cathode materials are promising candidates since they compose high specific capacity and discharge voltage. In chapter 1, an introduction to cell energy density and the development of high-nickel layered cathode materials along with associated obstacles of poor cycling stability and thermal stability have been discussed. Associated works like doping or surface coating have also been mentioned in this section. In chapter 2, Al doping in high-nickel layered cathode materials to enhance the structural and thermal stability was introduced. Uniform incorporation of Al doping is achieved by mechanical fusion and calcination processes. The Al doping not only decreased the Li/Ni mixing ratio but also enhance the thermal resistance to oxygen evolution because of strong Al-O bonding, which leads to elevated electrochemical and thermal stability. In chapter 3, TiN is implemented as a Ti dopant for high-nickel layered cathode materials to improve the electrochemical performance in the LIBs. The Ti not only diffused within the bulk structure but also formed segregation on the surface, which improved the structural stability and led to better cycling performance. Although LIBs deliver high energy density, safety concerns of flammable organic electrolytes have not been resolved yet. Therefore, the aqueous rechargeable zinc-ion batteries (ZIB) have been praised for their safe, low-cost, eco-friendly stationary energy storage, which is considered as a complementary system to LIBs. In chapter 4, the mechanism, advantages, and challenges of ZIBs would be given and the strategies for solving the zinc metal anode issues have been discussed in this section. In chapter 5, a polymer coating method was reported to facilitate Zn deposition/ stripping by coordination with Zn2+ and prevented direct contact with aqueous electrolyte to block corrosion side-reactions. With this coating, a boost in a lifetime (up to 400 hours) and lower polarization under extremely high current conditions (10 mA cm-2) have been achieved in repeated Zn deposition/ stripping cycling.

25 ENERGY STORAGE↗
DOE OSTI2025

Securing the Modern Grid: Federal Investments, Digitization, and Supply Chain Strategy

Across the United States (U.S.) grid expansion and modernization is underway, paving the way for accelerated load growth and intelligent resource management. Digitization of the grid is supported by several state and federal programs, providing support for utilities installing advanced metering infrastructure (AMI), AI-powered analytics systems, battery energy storage systems (BESS), and distributed energy resource management systems (DERMS) to transform the grid from a one-way power delivery system into an intelligent, responsive network that will enable faster load growth and power expansion of data centers for advanced artificial intelligence (AI) applications. The digital transformation of America's grid presents opportunity for increased efficiency and resiliency but also introduces new digital risks that require careful management. Digital equipment often contains several vulnerabilities such as unencrypted communication protocols, and persistent remote access capabilities that could be exploited to manipulate device settings, coordinate service disruptions, or inject false data into grid operations. These digital risks become particularly important as the grid must rapidly scale to support AI-driven data centers, which the administration has identified as essential for maintaining U.S. technological leadership and economic competitiveness. These vulnerabilities are compounded by supply chain realities: Chinese manufacturers currently produce 70-90% of essential grid components including inverters, batteries, and control systems, with the U.S. lacking domestic manufacturing capacity for critical assets like extra-high voltage transformers. Recent federal legislation has established Foreign Entity of Concern (FEOC) restrictions to address these risks, requiring projects to achieve escalating thresholds of non-FEOC content to receive tax credits while utilities work to expand sourcing channels for their supply chains and strengthen security measures. These restrictions arrive precisely when utilities face unprecedented electricity demand growth driven by the rapid growth in data centers, creating a considerable challenge: rapidly expanding infrastructure while navigating complex compliance requirements while lacking viable alternatives for many critical components. Idaho National Laboratory (INL) and its partners have developed practical approaches to help utilities navigate these intersecting challenges as they leverage federal investment to strengthen and grow the grid. These solutions include Cyber-Informed Engineering (CIE) principles that build resilience directly into systems, the Cirrus tool for secure cloud migration, and enhanced procurement guidance that embeds security requirements throughout equipment lifecycles. Federal initiatives, such as the Technical Assistance for Digital Assurance (TADA) project, provide direct support to utilities implementing these approaches while facilitating knowledge sharing across the industry. While these tools and frameworks cannot eliminate all risks inherent in foreign supply chain dependencies, they offer pragmatic pathways for strengthening security posture without sacrificing the deployment momentum essential to meeting surging electricity demand. Ultimately, securing America's digital energy infrastructure demands dedicated coordination across multiple fronts: building domestic supply chains, implementing robust digital assurance practices, and maintaining the aggressive modernization timeline necessary for reliability, resilience, and energy independence.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Carbon Support Microstructure Impact on High Current Density Transport Resistances in PEMFC Cathode

Cell voltages at high current densities (HCD) of an operating proton-exchange membrane fuel cell (PEMFC) cathode suffer from losses due to the local-O 2 and bulk-H + transport resistances in the catalyst layer. Particularly, the microstructure of high surface area carbon (HSC) support upon which both the platinum catalyst and ionomer are dispersed play a pivotal role in controlling the reactant transport to the active site in the catalyst layer. In this study, we perform a systematic analysis of the underlying microstructure of platinum-cobalt catalyst dispersed on various HSC supports in terms of their surface area and pore-size distribution. The carbon microstructure was found to strongly influence the PtCo nanoparticle dispersion, catalyst layer ionomer distribution and transport losses governing the performance at HCD. Catalyst layer electrochemical diagnostics carried out to quantify local-O 2 transport resistance and bulk-H + transport resistance in the cathode were found to be directly correlated to the micropore (<2 nm) and macropore (>8 nm) surface areas of the carbon support, respectively. Finally, a 1D-performance model has been developed to assimilate our understanding of the catalyst layer microstructure and transport resistances at HCD.

25 ENERGY STORAGE↗
DOE OSTI2024

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Physics↗
DOE OSTI2021

SnS Homojunction Solar Cell with n-Type Single Crystal and p-Type Thin Film

Herein, a pn homojunction SnS solar cell is fabricated for the first time by the deposition of p-type SnS polycrystalline thin films on the recently reported large n-type SnS single crystals. The p-type thin films consist of columnar grains that grow along the <100> direction, which is the same orientation as the n-type single crystal. In addition, the interface of the pn homojunctions is void-free and compositionally sharp. The SnS homojunction solar cell achieves an open-circuit voltage (VOC) of 360 mV, which is as large as the highest VOC of previously reported SnS-based heterojunction solar cells. The built-in potential of the homojunction cell is 0.92 eV, which is close to the bandgap energy of SnS (≈1.1 eV), and larger than reported for heterojunctions (≈0.7 eV). The resulting 1.4% conversion efficiency (n) of the homojunction solar cell is smaller than the record 4–5% in heterojunctions, mainly due to the low short-circuit current density (J SC ) of 7.5 mA cm -2 . Once the device structure of the homojunction cell is optimized to efficiently collect the photogenerated carriers and achieve a comparable J SC as the conventional heterojunction cells (≈25 mA cm -2 ), high n exceeding 4–5% will be realized with improving the VOC.

14 SOLAR ENERGY↗
DOE OSTI2021

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a two-step top-down process consisting of an inductively coupled plasma reactive ion etch followed by a hot, 85% H 3 PO 4 crystallographic wet etch is explored. The vertical nanowires are oriented in the $[0001]$ direction and are bound by sidewalls comprising of $\{33\bar{6}2\}$ semipolar planes which are at a 12° angle from the [0001] axis. High temperature H3PO4 etching between 60 °C and 95 °C result in smooth semipolar faceting with no visible micro-faceting, whereas a 50 °C etch reveals a micro-faceted etch evolution. High-angle annular dark-field scanning transmission electron microscopy imaging confirms nanowire tip dimensions down to 8–12 nanometers. The activation energy associated with the etch process is 0.90 ± 0.09 eV, which is consistent with a reaction-rate limited dissolution process. The exposure of the $\{33\bar{6}2\}$ type planes is consistent with etching barrier index calculations. The field emission properties of the nanowires were investigated via a nanoprobe in a scanning electron microscope as well as by a vacuum field emission electron microscope. Finally, the measurements show a gap size dependent turn-on voltage, with a maximum current of 33 nA and turn-on field of 1.92 V nm -1 for a 50 nm gap, and uniform emission across the array.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Ionic conductive polymers as artificial solid electrolyte interphase films in Li metal batteries – A review

Lithium (Li) metal has been considered as the ultimate anode material for next-generation rechargeable batteries due to its ultra-high theoretical specific capacity (3860 mAh g -1 ) and the lowest reduction voltage (-3.04 V vs the standard hydrogen electrode). However, the dendritic Li formation, uncontrolled interfacial reactions, and huge volume variations lead to unstable solid electrolyte interphase (SEI) layer, low Coulombic efficiency and hence short cycling lifetime. Designing artificial solid electrolyte interphase (artificial SEI) films on the Li metal electrode exhibits great potential to solve the aforementioned problems and enable Li–metal batteries with prolonged lifetime. Polymer materials with good ionic conductivity, superior processability and high flexibility are considered as ideal artificial SEI film materials. In this review, according to the ionic conductive groups, recent advances in polymeric artificial SEI films are summarized to afford a deep understanding of Li ion plating/stripping behavior and present design principles of high-performance artificial SEI films in achieving stable Li metal electrodes. Perspectives regarding to the future research directions of polymeric artificial SEI films for Li–metal electrode are also discussed. The insights and design principles of polymeric artificial SEI films gained in the current review will be definitely useful in achieving the Li–metal batteries with improved energy density, high safety and long cycling lifetime toward next-generation energy storage devices.

25 ENERGY STORAGE↗
DOE OSTI2025

Microscopic Imprints of Learned Solutions in Tunable Networks

In physical networks trained using supervised learning, physical parameters are adjusted to produce desired responses to inputs. An example is an electrical contrastive local learning network of nodes connected by edges that adjust their conductances during training. When an edge conductance changes, it upsets the current balance of every node. In response, physics adjusts the node voltages to minimize the dissipated power. Learning in these systems is therefore a coupled double-optimization process, in which the network descends both a cost landscape in the high-dimensional space of edge conductances and a physical landscape—the power dissipation—in the high-dimensional space of node voltages. Because of this coupling, the physical landscape of a trained network contains information about the learned task. Here, we derive a structure-function relation for trained tunable networks and demonstrate that all the physical information relevant to the trained input-output relation can be captured by a tuning susceptibility, an experimentally measurable quantity. We supplement our theoretical results with simulations to show that the tuning susceptibility is correlated with functional importance and that we can extract physical insight into how the system performs the task from the conductances of highly susceptible edges. Our analysis is general and can be applied directly to mechanical networks, such as networks trained for protein-inspired function such as allostery.

36 MATERIALS SCIENCE↗