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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Alloy hardening and softening in binary molybdenum alloys as related to electron concentration

An investigation was conducted to determine the effects of alloy additions of hafnium, tantalum, tungsten, rhenium, osmium, iridium, and platinum on hardness of molybdenum. Special emphasis was placed on alloy softening in these binary molybdenum alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to molybdenum, while those elements having an equal number or fewer s+d electrons that molybdenum failed to produce alloy softening. Alloy softening and alloy hardening can be correlated with the difference in number of s+d electrons of the solute element and molybdenum.

Stephens, J. R.↗
NASA NTRS1971

Rolling-element fatigue lives of through-hardened bearing materials.

Rolling-element fatigue tests were run with eight through-hardened bearing materials at 150 F. One-half in. dia balls of each material were run in five-ball fatigue testers. Care was taken to maintain constant all variables known to affect rolling-element fatigue life. The longest lives at 150 F were obtained with AISI 52100. Ten-percent lives of the other materials ranged from 7 to 78 percent of that obtained with 52100. A trend is indicated toward decreased rolling-element fatigue life with increased total weight percent of alloying elements. Three groups of 120-mm bore ball bearings made from AISI M-1, AISI M-50, and WB-49 were fatigue tested at an outer-race temperature of 600 F. The 10-percent lives of the M-50 and M-1 bearings exceeded the calculated AFBMA life by factors of 13 and 6, respectively. The bearings with WB-49 races showed lives less than AFBMA life. The results of the bearing tests at 600 F correlate well with the results of the five-ball fatigue data at 150 F.

Parker, R. J.↗
NASA NTRS1973

Study of interaction among silicon, lithium, oxygen and radiation-induced defects for radiation-hardened solar cells

In order to improve reliability and the useful lifetime of solar cell arrays for space use, a program was undertaken to develop radiation-hardened lithium-doped silicon solar cells. These cells were shown to be significantly more resistant to degradation by ionized particles than the presently used n-p nonlithium-doped silicon solar cells. The results of various analyses performed to develop a more complete understanding of the physics of the interaction among lithium, silicon, oxygen, and radiation-induced defects are presented. A discussion is given of those portions of the previous model of radiation damage annealing which were found to be in error and those portions which were upheld by these extensive investigations.

Berman, P. A.↗
NASA NTRS1972

Alloy hardening and softening in binary molybdenum alloys as related to electron concentration.

Determination of the effects of alloy additions of Hf, Ta, W, Re, Os, Ir, and Pt on the hardness of Mo. Special emphasis was placed on alloy softening in these binary Mo alloys. A modified microhardness test unit permitted hardness determinations at homologous temperatures ranging from 0.02 to 0.15, where alloy softening normally occurs in bcc alloys. Results showed that alloy softening was produced by those elements having an excess of s + d electrons compared to Mo while those elements having an equal number or fewer s + d electrons than Mo failed to produce alloy softening. The magnitude of the softening and the amount of solute element at the hardness minimum diminished rapidly with increasing test temperature. At solute concentrations where alloy softening was observed, the temperature sensitivity of hardness was lowered. For solute elements having an excess of s + d electrons or fewer s + d electrons than Mo, alloy softening and alloy hardening can be correlated with the difference in number of s + d electrons of the solute element and Mo.

Stephens, J. R.↗
NASA NTRS1974

Radiation hardening of MOS devices by boron

A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

Danchenko, V.↗
NASA NTRS1975

Role of electron concentration in softening and hardening of ternary molybdenum alloys

Effects of various combinations of hafnium, tantalum, rhenium, osmium, iridium, and platinum in ternary molybdenum alloys on alloy softening and hardening were determined. Hardness tests were conducted at four test temperatures over the temperature range 77 to 411 K. Results showed that hardness data for ternary molybdenum alloys could be correlated with anticipated results from binary data based upon expressions involving the number of s and d electrons contributed by the solute elements. The correlation indicated that electron concentration plays a dominant role in controlling the hardness of ternary molybdenum alloys.

Stephens, J. R.↗
NASA NTRS1977

Electric heating for metal surface hardening

Electrical element heats only desired area and permits precise control of temperature and cooling rate. Process serves as alternative to flame hardening for treating localized areas.

Lockman, N. L.↗
NASA NTRS1975

Hardening of MJS77 spacecraft against the Jupiter radiation belts

Results of the device characterization program to identify components of the Mariner Jupiter/Saturn spacecraft in need of radiation hardening to meet a total dose requirement of 5 trillion e/sq cm are presented. The parts to be tested, including bipolar transistors, JFETs, SCRs, CMOS devices, linear integrated circuits, Zener diodes and other radiation-sensitive parts, were identified by a worst case circuit analysis of the 20 major subsystems. The test samples were exposed to several levels of irradiation from a Dynamitron electron accelerator capable of producing a steady stream of electrons at energies up to 2.5 eV. The electrical parameters of the devices were measured immediately following irradiation to prevent annealing. CMOS devices and linear devices showed the most severe degradation in a moderate radiation environment, and significant degradation was produced at low current in bipolar transistors. Three methods used for screening a number of devices determined by circuit and shielding analyses to be unacceptable radiation-sensitive are described: diffusion and metallization lot screening; wafer lot screening; and irradiation-anneal screening.

W E Price↗
NASA NTRS1976

On the use of two hardening rules of plasticity in incremental and pseudo force analysis

The tangent stiffness and pseudo force forms of the equations of motion are first derived within the context of a total Lagrangian formulation. After a brief discussion of available incremental theory plasticity models, the small strain formulations and computational procedures of the mechanical sublayer model and combined kinematic-isotropic hardening as used in the general purpose structural analysis program AGGIE I are presented. Several sample problems are then presented along with recommended guidelines for use of the two plasticity models.

Hunsaker, B., Jr.↗
NASA NTRS1978

Jerky loads on surface-hardened gears

Damage occurs again and again in practice in the form of transmissions with surface hardened gears which break after a very long operating time (explained by seldom occurring jerky loads). Gear drives are frequently exposed to jerky stresses which are greater than their fatigue limit. These stresses are considered in gear calculations, first, by shock factors when the transmission is to be designed as high endurance with regard to overloads and, second, in the form of operating ratios when the design is to be time enduring with regard to overloads. The size of the operating ratio depends not only on torque characteristics, drive and processing machine, but also on the material and heat treatment.

Rettig, H.↗
NASA NTRS1980

Stress corrosion cracking evaluation of martensitic precipitation hardening stainless steels

The resistance of the martensitic precipitation hardening stainless steels PH13-8Mo, 15-5PH, and 17-4PH to stress corrosion cracking was investigated. Round tensile and c-ring type specimens taken from several heats of the three alloys were stressed up to 100 percent of their yield strengths and exposed to alternate immersion in salt water, to salt spray, and to a seacoast environment. The results indicate that 15-5PH is highly resistant to stress corrosion cracking in conditions H1000 and H1050 and is moderately resistant in condition H900. The stress corrosion cracking resistance of PH13-8Mo and 17-4PH stainless steels in conditions H1000 and H1050 was sensitive to mill heats and ranged from low to high among the several heats included in the tests. Based on a comparison with data from seacoast environmental tests, it is apparent that alternate immersion in 3.5 percent salt water is not a suitable medium for accelerated stress corrosion testing of these pH stainless steels.

Humphries, T. S.↗
NASA NTRS1981

Effects of alloying on aging and hardening processes of steel with 20% nickel

Measurements of hardness, thermal emf, and electrical resistance were used to study the effects of Co, Mo, Ti and Al contents on aging and hardening processes in Fe 20%Ni steel. It is shown that the effects of these alloying elements differ substantially. Anomalies which arise in the temperature dependence of physical properties due to the presence of cobalt and molybdenum are reduced by the inclusion of titanium and aluminum (and vice versa).

Bogachev, I. N.↗
NASA NTRS1981

An advanced, radiation hardened bulk CMOS/LSI technology

An advanced, second generation, bulk, Si-gate CMOS process is described. This process is capable of producing LSI and VLSI parts that are latch-up free and hardened to total dose levels in excess of 2 x 10 to the 5th rad-Si for applications in space and weapons radiation environments. Two memories designed to use this process are also described. Both circuits are 4096-bit, static CMOS RAMs.

Schroeder, J. E.↗
NASA NTRS1982

A radiation hardened 256 x 4 bulk CMOS RAM

A radiation hardened version of the C2L process has been developed that utilizes all-low-temperature processes subsequent to channel oxidation. This process has been used on 1K RAMS. The RAMs functioned reliably at a dose of 200,000 rads (Si) and failed at a dose of 500,000 rads (Si). The 1K RAM is capable of operating from 7.5 to 12 volts and has an access time from address change of 160 nsec at 10 volts

Napoli, L. S.↗
NASA NTRS1985

Elastic constant versus temperature behavior of three hardened maraging steels

Elastic constants of three maraging steels were determined by measuring ultrasonic velocities. Annealed steels show slightly lower bulk moduli and considerably lower shear moduli than hardened steels. All the elastic constants (Young's modulus, shear modulus, bulk modulus and Poisson's ratio) show regular temperature behavior between 76 and 400 K. Young's modulus and the shear modulus increase with increasing yield strength, but the bulk modulus and Poisson's ratio are relatively unchanged. Elastic anisotropy is quite small.

Ledbetter, H. M.↗
NASA NTRS1985

Thermomechanical cyclic hardening behavior of Hastelloy-X

Experimental evidence of thermomechanical history dependence on the cyclic hardening behavior of a representative combustor liner material Hastelloy-X is presented, along with a discussion about the relevant concept of thermomechanical path dependence. Based on the experimental results, a discussion is given on the inadequacy of formulating nonisothermal constitutive equations solely on the basis of isothermal testing. Finally, the essence of a mathematical representation of thermoviscoplasticity is presented that qualitatively accounts for the observed hereditary behavior. This is achieved by formulating the scaler evolutionary equation in an established viscoplastic theory to reflect thermomechanical path dependence. Although the necessary nonisothermal tests for further quantifying the thermoviscoplastic model have been identified, such data are not yet available.

Bartolotta, P. A.↗
NASA NTRS1986

Anisotropy of high temperature strength in precipitation-hardened nickel-base superalloy single crystals

The anisotropy of high temperature strength of nickel-base superalloy, Alloy 454, in service for advanced jet engine turbine blades and vanes, was investigated. Crystallographic orientation dependence of tensile yield strength, creep and creep rupture strength was found to be marked at about 760C. In comparison with other single crystal data, a larger allowance in high strength off-axial orientation from the 001 axis, and relatively poor strength at near the -111 axis were noted. From transmission electron microscopy the anisotropic characteristics of this alloy were explained in terms of available slip systems and stacking geometries of gamma-prime precipitate cuboids which are well hardened by a large tantalum content. 100 cube slip was considered to be primarily responsible for the poor strength of the -111 axis orientation replacing the conventional 111 plane slip systems.

Nakagawa, Y. G.↗
NASA NTRS1985

Hardening of commercial CMOS PROMs with polysilicon fusible links

The method by which a commercial 4K CMOS PROM with polysilicon fuses was hardened and the feasibility of applying this method to a 16K PROM are presented. A description of the process and the necessary minor modifications to the original layout are given. The PROM circuit and discrete device characteristics over radiation to 1000K rad-Si are summarized. The dose rate sensitivity of the 4K PROMs is also presented.

Newman, W. H.↗