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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Influence of curvature on the device physics of thin film transistors on flexible substrates

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Transition among failure modes of the bending system with a stiff film on a soft substrate

Growing interest is being attracted by stretchable and flexible electronics recently due to their attractive characteristics, commercial potentials, and engineering challenges. In comparison with the system on a macroscopic scale, different failure modes are observed in a system with a thin film bonded on an elastomeric substrate. Furthermore, the experimental observations reveal that failure modes occur in turn with the increasing of thickness ratio of the film to substrate. In this paper, theoretical analysis is performed on the failure mechanism in this system with the focus on transitions among these failure modes based on the theory of fracture mechanics. The present theoretical predictions are coincident with related experiment results and can be used to guide the related structural design.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Nonvolatile data storage using mechanical force-induced polarization switching in ferroelectric polymer

Ferroelectric polymers offer the promise of low-cost and flexible electronic products. They are attractive for information storage due to their spontaneous polarization which is usually switched by electric field. Here, we demonstrate that electrical signals can be readily written on ultra-thin ferroelectric polymer films by strain gradient-induced polarization switching (flexoelectric effect). A force with magnitude as small as 64nN is enough to induce highly localized (40 nm feature size) change in the polarization states. The methodology is capable of realizing nonvolatile memory devices with miniaturized cell size and storage density of tens to hundreds Gbit per square inch.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhancement in the structure quality of ZnO nanorods by diluted Co dopants: Analyses via optical second harmonic generation

We report a systematic study about the effect of cobalt concentration in the growth solution over the crystallization, growth, and optical properties of hydrothermally synthesized Zn{sub 1−x}Co{sub x}O [0 ≤ x ≤ 0.40, x is the weight (wt.) % of Co in the growth solution] nanorods. Dilute Co concentration of 1 wt. % in the growth solution enhances the bulk crystal quality of ZnO nanorods, and high wt. % leads to distortion in the ZnO lattice that depresses the crystallization, growth as well as the surface structure quality of ZnO. Although, Co concentration in the growth solution varies from 1 to 40 wt. %, the real doping concentration is limited to 0.28 at. % that is due to the low growth temperature of 80 °C. The enhancement in the crystal quality of ZnO nanorods at dilute Co concentration in the solution is due to the strain relaxation that is significantly higher for ZnO nanorods prepared without, and with high wt. % of Co in the growth solution. Second harmonic generation is used to investigate the net dipole distribution from these coatings, which provides detailed information about bulk and surface structure quality of ZnO nanorods at the same time. High quality ZnO nanorods are fabricated by a low-temperature (80 °C) hydrothermal synthesis method, and no post synthesis treatment is needed for further crystallization. Therefore, this method is advantageous for the growth of high quality ZnO coatings on plastic substrates that may lead toward its application in flexible electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

High mobility amorphous InGaZnO{sub 4} thin film transistors formed by CO{sub 2} laser spike annealing

Amorphous InGaZnO{sub 4} (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. For peak annealing temperatures near 430 °C and a 1 ms dwell, TFTs exhibit saturation field-effect mobilities above 70 cm{sup 2}/V-s (V{sub on} ∼ −3 V), a value over 4 times higher than furnace-annealed control samples (∼16 cm{sup 2}/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

High-performance carbon nanotube thin-film transistors on flexible paper substrates

Single-walled carbon nanotubes (SWCNTs) are promising materials as active channels for flexible transistors owing to their excellent electrical and mechanical properties. However, flexible SWCNT transistors have never been realized on paper substrates, which are widely used, inexpensive, and recyclable. In this study, we fabricated SWCNT thin-film transistors on photo paper substrates. The devices exhibited a high on/off current ratio of more than 10{sup 6} and a field-effect mobility of approximately 3 cm{sup 2}/V·s. The proof-of-concept demonstration indicates that SWCNT transistors on flexible paper substrates could be applied as low-cost and recyclable flexible electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Top-gate organic depletion and inversion transistors with doped channel and injection contact

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Flexible semi-around gate silicon nanowire tunnel transistors with a sub-kT/q switch

Tunnel field-effect transistors (TFETs) with a subthreshold swing (SS) < 60 mV/dec are expected to be active devices in low-power flexible systems, potentially lowering operational voltage by virtue of steep switching behavior via band-to-band tunneling. In silicon (Si) channel materials, however, it still remains a challenge to obtain SS smaller than 60 mV/dec. In this study, we experimentally demonstrate the sub-60 mV/dec operation of a flexible semi-around gate TFET on a plastic substrate using Si nanowires (SiNWs) as the channel material. With the combined advantages of selectively thinned SiNW channels (width ∼ 15 nm and height ∼ 40 nm) and high-κ (Al{sub 2}O{sub 3} ∼ 7 nm) gate dielectric, in conjunction with an abrupt degenerate source junction, the device with a channel length of ∼500 nm exhibits a minimal SS of ∼42 mV/dec at room temperature. Moreover, mechanical bendability of the device indicates that it has stable and good fatigue properties, providing an important step towards the realization of steep-slope switches for low-power and energy-efficient flexible electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Fully transparent organic transistors with junction-free metallic network electrodes

We utilize highly transparent, junction-free metal network electrodes to fabricate fully transparent organic field effect transistors (OFETs). The patterned transparent Ag networks are developed by polymer crack template with adjustable line width and density. Sheet resistance of the network is 6.8 Ω/sq and optical transparency in the whole visible range is higher than 80%. The bottom contact OFETs with DNTT active layer and parylene-C dielectric insulator show a maximum field-effect mobility of 0.13 cm{sup 2}/V s (average mobility is 0.12 cm{sup 2}/V s) and on/off ratio is higher than 10{sup 7}. The current OFETs show great potential for applications in the next generation of transparent and flexible electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Elastic properties of suspended black phosphorus nanosheets

The mechanical properties of black phosphorus (BP) nanosheets suspended over circular holes were measured by an atomic force microscope nanoindentation method. The continuum mechanic model was introduced to calculate the elastic modulus and pretension of BP nanosheets with thicknesses ranging from 14.3 to 34 nm. Elastic modulus of BP nanosheets declines with thickness, and the maximum value is 276 ± 32.4 GPa. Besides, the effective strain of BP ranges from 8 to 17% with a breaking strength of 25 GPa. Our results show that BP nanosheets serve as a promising candidate for flexible electronic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Fabrication of SWCNT based flexible chemiresistor

Carboxyl (-COOH) functionalized SWCNT chemiresistors have been realized on Kapton substrate patterned with Au microelectrodes by the drop casting of functionalized SWCNT dispersion in DI water. I-V measurements on fabricated chemiresistor showed ohmic behavior at different temperatures (25°C-120°C). The effect of bending on flexible functionalized SWCNT chemiresistor for different diameter has been measured. It has been found that bending at different radius of curvature doesn’t change the ohmic behavior of fabricated chemiresistor. Achieved results are promising for cheap flexible electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

A doping-free poly-Ge film as channel material was implemented by CVD-deposited nano-crystalline Ge and visible-light laser crystallization, which behaves as a p-type semiconductor, exhibiting holes concentration of 1.8 × 10{sup 18 }cm{sup −3} and high crystallinity (Raman FWHM ∼ 4.54 cm{sup −1}). The fabricated junctionless 7 nm-poly-Ge FinFET performs at an I{sub on}/I{sub off} ratio over 10{sup 5} and drain-induced barrier lowering of 168 mV/V. Moreover, the fast programming speed of 100 μs–1 ms and reliable retention can be obtained from the junctionless poly-Ge nonvolatile-memory. Such junctionless poly-Ge devices with low thermal budget are compatible with the conventional CMOS technology and are favorable for 3D sequential-layer integration and flexible electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Thermal transport in semicrystalline polyethylene by molecular dynamics simulation

Recent research has highlighted the potential to achieve high-thermal-conductivity polymers by aligning their molecular chains. Combined with other merits, such as low-cost, corrosion resistance, and light weight, such polymers are attractive for heat transfer applications. Due to their quasi-one-dimensional structural nature, the understanding on the thermal transport in those ultra-drawn semicrystalline polymer fibers or films is still lacking. Here, we built the ideal repeating units of semicrystalline polyethylene and studied their dependence of thermal conductivity on different crystallinity and interlamellar topology using the molecular dynamics simulations. We found that the conventional models, such as the Choy-Young's model, the series model, and Takayanagi's model, cannot accurately predict the thermal conductivity of the quasi-one-dimensional semicrystalline polyethylene. A modified Takayanagi's model was proposed to explain the dependence of thermal conductivity on the bridge number at intermediate and high crystallinity. We also analyzed the heat transfer pathways and demonstrated the substantial role of interlamellar bridges in the thermal transport in the semicrystalline polyethylene. Lastly, our work could contribute to the understanding of the structure–property relationship in semicrystalline polymers and shed some light on the development of plastic heat sinks and thermal management in flexible electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Selenium-iodide: A low melting point eutectic semiconductor

Inorganic liquid semiconductors are of interest in harsh radiological environments, flexible electronics, and for direct printing of semiconductor devices. Many elemental and compound liquid semiconductors exist, although the lowest melting point is observed for Se at 221 °C. Recently, reports of liquid Se-S systems have shown betavoltaic and alphavoltaic power generation as a liquid with a reduced melting point of 105 °C. Here in this paper, we show the ability to depress the melting point to 57 °C by using equal atomic fractions of selenium and iodine while maintaining semiconducting behavior. A heterojunction structure using ITO and n-GaN as the contacts was selected based on chemical compatibility and predicted band lineups. Electrical and optical measurements were used to deduce the electronic and transport properties of the mixture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Effects of thin metal contacts on few-layer van der Waals ferrielectric CuInP 2 S 6

Out-of-plane polarized ferroelectric materials in a capacitive structure provide a key component for several technological applications. Furthermore, two-dimensional materials are expected to aid in the quest for both ultrathin and flexible electronics. Of the various two-dimensional ferroelectrics with out-of-plane polarization, CuInP 2 S 6 is special in that the Cu atoms are highly mobile and it has been shown to possess both low- and high-polarization states. Here, using density-functional-theory calculations, we explore the stabilization of the ferroelectric state for several prototypical metal contacts (Gr, Ni, Cu, Au, and Ag). In all cases, we find that the ferroelectric state can be stabilized at fewer layers than in the freestanding case. For all of the considered conventional metal contacts, we also find the existence of a quasi-ferroelectric state that stabilizes a polar phase for thicknesses greater than two layers of CIPS. In the cases of Au and Ag, interfacial alignment and strain can be used to stabilize ferroelectricity at the bilayer limit. Furthermore, we find that the strength of the interaction between the contact and CuInP 2 S 6 also leads to stabilization of the high-polarization state when ferroelectricity is stabilized. Lastly, energy-barrier calculations show that the system is still switchable in the presence of contact doping from the metal contacts.

2D materials↗