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At least 217 records · Page 12

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Physics↗

Dielectric properties of neutron and proton irradiated polymeric nanocomposite insulation for superconducting magnets of fusion power plants

Studies on radiation-resistant electrical insulation for superconducting magnets of nuclear fusion power plants are discussed. Metal oxide nanoparticle-incorporated organic polymer composite (MONAP) insulation films were manufactured and studied for their dielectric breakdown strength after exposure to neutrons and proton radiation at varying levels. Samples with up to 5 wt% of nanoparticles (NPs) of SiO 2 , MgO, and ZrO 2 were studied. The samples were exposed to radiation of up to 2 × 10 16 neutrons/cm 2 and 200 Mrad of protons. The addition of the nanoparticles improved the radiation resistance of the MONAP, and the performance depended on the type of NPs and the radiation exposure. Dielectric breakdown measurements at 77 K showed little degradation. Enhancement of dielectric strength was observed in some instances.

36 MATERIALS SCIENCE↗

Toward improved PVDF-BaTiO 3 composite dielectrics: mechanical activation of the filler versus filler content

Abstract Barium titanate (BT) perovskite particles were surface modified by means of mechanical treatment and used as inorganic component in polyvinylidene fluoride (PVDF) based composites. The changes in electrical properties of the composite films with increasing in filler content were followed by dielectric spectroscopy, breakdown strength andD-Emeasurements. A comparison of the properties of the composites prepared with untreated and mechanically activated particles revealed that there is a significant difference in their performances at low filler concentrations (<20 wt%). Introduction of the surface modified ceramic particles into PVDF matrix led to an increase of the dielectric constant without affecting significantly the electrical breakdown strength. In contrast, when as received BT particles were used a filler, both dielectric constants and breakdown strengths of the composite films were lower than the corresponding values observed for the pure PVDF. At higher concentrations, however, the influence of pre-treatment of the filler on the effective electrical properties becomes less significant. The obtained results were discussed in terms of the pronounced crystallization of polarβandγcrystal phases of PVDF in the presence of surface modified BT fillers, which is confirmed by Raman spectroscopy.

Physics↗

Simulating MADMAX in 3D: Requirements for Dielectric Axion Haloscopes

We present 3D calculations for dielectric haloscopes such as the currently envisioned MADMAX experiment. For ideal systems with perfectly flat, parallel and isotropic dielectric disks of finite diameter, we find that a geometrical form factor reduces the emitted power by up to 30% compared to earlier 1D calculations. We derive the emitted beam shape, which is important for antenna design. We show that realistic dark matter axion velocities of 10 -3 c and inhomogeneities of the external magnetic field at the scale of 10% have negligible impact on the sensitivity of MADMAX. We investigate design requirements for which the emitted power changes by less than 20% for a benchmark boost factor with a bandwidth of 50 MHz at 22 GHz, corresponding to an axion mass of 90 μeV. We find that the maximum allowed disk tilt is 100 μm divided by the disk diameter, the required disk planarity is 20 μm (min-to-max) or better, and the maximum allowed surface roughness is 100 μm (min-to-max). We show how using tiled dielectric disks glued together from multiple smaller patches can affect the beam shape and antenna coupling.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Experimental determination of axion signal power of dish antennas and dielectric haloscopes using the reciprocity approach

The reciprocity approach is a powerful method to determine the expected signal power of axion haloscopes in a model-independent way. Especially for open and broadband setups like the MADMAX dielectric haloscope the sensitivity to the axion field is difficult to calibrate since they do not allow discrete eigenmode analysis and are optically too large to fully simulate. The central idea of the reciprocity approach is to measure a reflection-induced test field in the setup instead of trying to simulate the axion-induced field. In this article, the reciprocity approach is used to determine the expected signal power of a dish antenna and a minimal dielectric haloscope directly from measurements. The results match expectations from simulation but also include important systematic effects that are too difficult to simulate. In particular, the effect of antenna standing waves and higher order mode perturbations can be quantified for the first time in a dielectric haloscope.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Dyson maps and unitary evolution for Maxwell equations in tensor dielectric media

The propagation and scattering of electromagnetic waves in dielectric media is of theoretical and experimental interest in a wide variety of fields. An understanding of observational results generally requires a numerical solution of Maxwell equations—usually implemented on conventional computers using sophisticated numerical algorithms. In recent years, advances in quantum information science and in the development of quantum computers have piqued curiosity about taking advantage of these resources for an alternate numerical approach to Maxwell equations. This requires a reformulation of the classical Maxwell equations into a form suitable for quantum computers which, unlike conventional computers, are limited to unitary operations. In this paper, a unitary framework is developed for the propagation of electromagnetic waves in a spatially inhomogeneous, passive, nondispersive, and anisotropic dielectric medium. For such a medium, generally, the evolution operator in the combined Faraday-Ampere equations is not unitary. There are two steps needed to convert this equation into a unitary evolution equation. In the first step, a weighted Hilbert space is formulated in which the generator of dynamics is a pseudo-Hermitian operator. In the second step, a Dyson map is constructed which maps the weighted-physical-Hilbert space to the original Hilbert space. Furthermore, the resulting evolution equation for the electromagnetic wave fields is unitary. Utilizing the framework developed in these steps, a unitary evolution equation is derived for electromagnetic wave propagation in a uniaxial dielectric medium. The resulting form is suitable for quantum computing.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Impacts to FeRAM design arising from interfacial dielectric layers and wake up modulation in ferroelectric hafnium zirconium oxide

As ferroelectric hafnium zirconium oxide (HZO) becomes more widely utilized in ferroelectric microelectronics, integration impacts of intentional and non-intentional dielectric interfaces and their effects upon the ferroelectric film wake up and circuit parameters become important to understand. In this work, the effect of the addition of a linear dielectric aluminum oxide, Al 2 O 3 , below a ferroelectric Hf 0.58 Zr 0.42 O 2 film in a capacitor structure for FeRAM applications with NbN electrodes was measured. Depolarization fields resulting from the linear dielectric is observed to induce a reduction of the remanent polarization of the ferroelectric. Addition of the aluminum oxide also impacts the wake up of the HZO with respect to the cycling voltage applied. Intricately linked to the design of a FeRAM 1C/1T cell, the metal-ferroelectric-insulator-metal (MFIM) devices are observed to significantly shift charge related to the read states based on aluminum oxide thickness and wake up cycling voltage. As a result, a 33% reduction in the separation of read states is measured, which complicates how a memory cell is designed and illustrates the importance of clean interfaces in devices.

30 DIRECT ENERGY CONVERSION↗

Wafer-scale high-k SrTiO 3 dielectrics with rational barrier-layer design for low leakage and high charge density

High-k oxides such as SrTiO 3 promise large capacitance, but their dielectric response is often limited by leakage currents due to reduced bandgaps. We show that introducing a thin barrier layer beneath SrTiO 3 is a simple and effective way to suppress leakage and increase charge density. Using hybrid molecular beam epitaxy, we grew uniform SrTiO 3 films on Nb:SrTiO 3 , CaSnO 3 /Nb:SrTiO 3 , and 2-in. SiO 2 /p-Si stacks to directly compare how different barrier layers influence device behavior. Both CaSnO 3 and SiO 2 reduce leakage, but the ultra-wide-bandgap SiO 2 layer enables much higher operating voltages, yielding charge densities exceeding 5 × 10 13 cm −2 at room temperature—more than a fivefold enhancement compared to devices without a barrier layer. This improvement comes with a predictable trade-off: the lower dielectric constant of SiO 2 reduces overall capacitance, making its thickness an important design parameter. Together, these results demonstrate that rational barrier-layer engineering—including wafer-scale integration on Si—provides a clear pathway to achieving higher charge densities in SrTiO 3 -based dielectric devices.

36 MATERIALS SCIENCE↗

PyOECP: A flexible open-source software for the measurement and modeling of the dielectric spectrum from the reflection coefficient

We present PyOECP, a Python-based flexible open-source software for estimating and modeling the complex permittivity obtained from the open-ended coaxial probe (OECP) technique. The transformation of the measured reflection coefficient to complex permittivity is performed based on two different models, including the capacitance model and the antenna model. The software library contains dielectric spectra of common reference liquids, which can be used to transform the reflection coefficient into the dielectric spectra. Several Python routines that are commonly employed (e.g., SciPy and NumPy) are only required so that the users can alter the software structure depending on their needs. The modeling algorithm exploits the Markov chain Monte Carlo method for the data regression. The discrete relaxation models can be built by a proper combination of well-known relaxation models. In addition to these models, the electrode polarization, which is a common measurement artifact for interpreting the dielectric spectra, can be incorporated in the modeling algorithm. A continuous relaxation model, which solves the Fredholm integral equation of the first kind (a mathematically ill-posed problem) is also included.

Yoon, Tae-Jun↗

Dielectric metasurfaces made from vertically oriented nanoresonators

Dielectric metasurfaces control optical wavefronts via nanoscale resonators laid out across a surface. However, most metasurfaces are, by design, planar. In this work, we demonstrate the ability to fabricate dielectric metasurfaces with vertically oriented dielectric resonators using membrane projection lithography. We first numerically characterize the resonant modes of an array of vertically oriented germanium ellipses with no substrate and identify a narrowband region where the resonators satisfy the first Kerker condition. We then fabricate seven metasurfaces by depositing germanium ellipses onto walls of a 3D micrometer-sized silicon nitride photonic scaffold and characterize their transmission. We find that signatures of the multipolar modes seen in the unsupported array persist in the supported array, but the overall behavior is more complicated due to the scaffold. Further, we show that for a conceptual metasurface containing two coupled, vertically oriented ellipses, the ellipses can generate a sharp resonance with a quality factor of 240.

Gennaro, Sylvain D. (ORCID:0000000222090831)↗

Achieving extreme light confinement in low-index dielectric resonators through quasi-bound states in the continuum

Obtaining large field enhancement in low-refractive-index dielectric materials is highly relevant to many photonic and quantum optics applications. However, confining light in these materials is challenging, owing to light leakage through coupling to continuum modes in the surrounding environment. Here, we investigate the possibility of achieving high quality factors in low-index dielectric resonators through the bound states in the continuum (BIC). Our simulations demonstrate that destructive interference between leaky modes can be achieved by tuning the geometrical parameters of the resonator arrays, leading to the emergence of quasi-BIC in resonators that have a small index contrast to the underlying substrates. The resultant large field enhancement gives rise to giant quality factors and Purcell effects. By introducing vertical mirror symmetry, the quasi-BIC can be tuned into an ideal BIC. In addition, the quasi-BIC can modify the emission patterns of the coupled emitters, rendering highly directional and focused far-field emission. These findings may provide a path for the practical implementation of photonic and quantum devices based on low-index dielectric materials.

42 ENGINEERING↗

Transverse Stability in an Alternating Symmetry Planar Dielectric Wakefield Structure

Dielectric Wakefield Acceleration (DWA) is a promising technique for realizing the next generation of linear colliders. It provides access to significantly higher accelerating gradients than traditional radio-frequency cavities. One impediment to realizing a DWA-powered accelerator is the issue of the transverse stability of the beams within the dielectric structure due to short-range wakefields. These short-range wakefields have a tendency to induce a phenomenon known as single-bunch beam breakup, which acts as its name implies and destroys the relevant beam. We attempt to solve this issue by leveraging the quadrupole mode excited in a planar dielectric structure and then alternating the orientation of said structure to turn an unstable system into a stable one. We examine this issue computationally to determine the limits of stability and based on those simulations describe a future experimental realization of this strategy.

43 PARTICLE ACCELERATORS↗

2D Amorphous Carbon Dielectric Prepared from Solution Precursor for Nanoelectronics

The preparation of amorphous 2D nanodielectrics represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structures.

Pham, Viet Hung↗

Prediction of Dielectric Constant in Series of Polymers by Quantitative Structure-Property Relationship (QSPR)

This work is devoted to the investigation of dielectric permittivity which is influenced by electronic, ionic, and dipolar polarization mechanisms, contributing to the material’s capacity to store electrical energy. In this study, an extended dataset of 86 polymers was analyzed, and two quantitative structure–property relationship (QSPR) models were developed to predict dielectric permittivity. From an initial set of 1273 descriptors, the most relevant ones were selected using a genetic algorithm, and machine learning models were built using the Gradient Boosting Regressor (GBR). In contrast to Multiple Linear Regression (MLR)- and Partial Least Squares (PLS)-based models, the gradient boosting models excel in handling nonlinear relationships and multicollinearity, iteratively optimizing decision trees to improve accuracy without overfitting. The developed GBR models showed high R2 coefficients of 0.938 and 0.822, for the training and test sets, respectively. An Accumulated Local Effect (ALE) technique was applied to assess the relationship between the selected descriptors—eight for the GB_A model and six for the GB_B model, and their impact on target property. ALE analysis revealed that descriptors such as TDB09m had a strong positive effect on permittivity, while MLOGP2 showed a negative effect. These results highlight the effectiveness of the GBR approach in predicting the dielectric properties of polymers, offering improved accuracy and interpretability.

Ascencio-Medina, Estefania↗

Dielectric constants of soils at microwave frequencies

A knowledge of the complex dielectric constant of soils is essential in the interpretation of microwave airborne radiometer data of the earth's surface. Measurements were made at 37 GHz on various soils from the Phoenix, Ariz., area. Extensive data have been obtained for dry soil and soil with water content in the range from 0.6 to 35 percent by dry weight. Measurements were made in a two arm microwave bridge and results were corrected for reflections at the sample interfaces by solution of the parallel dielectric plate problem. The maximum dielectric constants are about a factor of 3 lower than those reported for similar soils at X-band frequencies.

Geiger, F. E.↗

Dielectric siphons.

The normally weak polarization force density, exerted on insulating dielectric liquids by a nonuniform electric field, is enhanced if high pressures are used. The nonuniform electric field acts as an elastic ?wall' to contain and guide the dielectric fluid. A general theory for these electrohydrodynamic (EHD) conduits has been developed. An illustrative example of the EHD conduits is the dielectric siphon consisting of two U-shaped electrodes held adjacent to each other by insulating nylon screws.

Jones, T. B.↗

Waveguide excited dielectric spheres as feeds.

The results of experiments with dielectric obstacles of various geometries placed directly upon the apertures of circular and rectangular waveguides are presented. It is found that dielectric spheres, and in some instances dielectric cubes, two to four wavelengths in dimension produce directive patterns with low sidelobe levels. For some cross sections, the measured gain of these antennas is greater (6 dB in some cases) than that produced by optimum horns having apertures of identical cross section. The linearity of the polarization of these antennas is essentially the same as that of an open-end waveguide antenna.

Chatterjee, J. S.↗

Dielectric breakdown in a dilute plasma.

Description of tests performed to determine the effects of high voltages on dielectrics that are to insulate solar cell arrays operating at voltages up to 16 kV from the electrically active plasma of the space environment at 500 km altitude. The tests were performed on dielectrics considered for this application at positive bias voltages as high as 20 kV dc relative to ground in an argon plasma with electron number densities of approximately one million per cu cm. Teflon specimens displayed higher breakdown voltages than all other dielectrics tested.

Mckinzie, D. J., Jr.↗