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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.
A low pressure laboratory experiment to generate sporadic electrical discharges in either a particulate dielectric or air, representing a competing path of preferred electrical breakdown, was investigated. At high pressures, discharges occurred inside the dielectric particulate; at low pressures, discharges occurred outside the dielectric particulate; at a transition pressure regime, which depends on conductivity of the dielectric particulate, discharges were simultaneously generated in both particulate dielectric and air. Unique use of a particulate dielectric was critical for sporadic discharges at lower pressures which were not identical in character to discharges without the particulate dielectric. Application of these experimental results to the field of atmospheric electricity and simulation of the above-cloud type discharges that have recently been documented, called jets and sprites, are discussed.
Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.
In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These diodes incorporate a lateral Schottky barrier in combination with a high permittivity material beneath the field plate, enabling high average breakdown fields and a low turn-on voltage. Average electric fields up to 2.38 MV/cm were achieved for devices with an anode–cathode spacing of 4 μm, while maintaining with a turn-on voltage of 0.48 V. In contrast, SiN x /AlGaN/GaN control lateral Schottky diodes displayed an average breakdown field of ~0.7 MV/cm for devices with similar dimensions with a turn-on voltage of 0.46 V. The use of a high-permittivity dielectric can more effectively utilize the high breakdown fields in wide bandgap materials by proper management of the electric field. This demonstration provides an innovative way to integrate high-permittivity materials with GaN lateral devices for improved breakdown and resistance characteristics.
Deep earth drilling is a key technique to extract oil, gas, and geothermal heat from the earth. Many complex energy focusing methods have been explored as an alternative approach to reach these resources but most of them require high energy. However, by utilizing short time span liquid plasma discharges, energy focusing can be achieved within traditional drilling systems. These discharges induce a rapid expansion process and a resulting shockwave. It is believed that this focused energy will lower the required cutting force to progress through the rock. Lowering the required cutting force will allow for lower drill bit wear, quicker rate of penetration, and an overall cost savings of the project. Plasma breakdown characteristics at drilling relevant pressures, ranging from 1 to 350 atm, were studied. A resistance–capacitance circuit with an air gapped spark switch was utilized to generate pulsed plasma between the pressurized electrodes. It was found that the required breakdown voltage increases as the pressure increases. It was also found that a plasma channel formation and an associated breakdown may or may not occur between the electrodes at different pressures due to variation in required breakdown voltages. Breakdown time-lag in the dielectric medium (tap water, 780 μS cm –1 ) increased as the pressure was increased, which indicated a higher voltage drop at higher pressures (>100 atm). The plasma generated cavitation bubble with an associated shockwave occurred as pressures were increased. However, the bubble radius and the bubble duration decreased as the pressure was increased. The plasma generated shockwave speeds fall within the expected speed of sound in water. Lastly, preliminary rock cracking tests were performed on granite at high pressures (340 and 272 atm) and it was found that plasma is able to create cracks in the rock.
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Piezoelectric stacks are being sought to be used as actuators for precision positioning and deployment of mechanisms in future planetary missions. Beside the requirement for very high operation reliability, these actuators are required for operation at space environments that are considered harsh compared to normal terrestrial conditions.These environmental conditions include low and high temperatures and vacuum or high pressure. Additionally, the stacks are subjected to high stress and in some applications need to operate with a very long lifetime durability.Many of these requirements are beyond the current industry design margins for nominal terrestrial applications. In order to investigate some of the properties that will indicate the durability of such actuators and their limitations we have developed a new type of test fixture that can be easily integrated in various test chambers for simulating environmental conditions, can provide access for multiple measurements while being exposed to adjustable stress levels. We designed and built two test fixtures and these fixtures were made to be adjustable for testing stacks with different dimensions and can be easily used in small or large numbers. The properties that were measured using these fixtures include impedance, capacitance, dielectric loss factor, leakage current, displacement, breakdown voltage, and lifetime performance. The fixtures characteristics and the test capabilities are presented in this paper.
Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm2 and a Baliga figure of merit of 22 GW/cm2.
Biaxially oriented polypropylene (BOPP) films are widely used in dielectric capacitors due to their ultralow loss, high breakdown strength, and long lifetime. However, their poor temperature tolerance limits applications in emerging high-temperature environments such as wide-band-gap power electronics in electric vehicles. Here, we report significantly enhanced dielectric insulation properties of biaxially oriented poly(ethylene 2,6-naphthalate) (BOPEN) films compared to biaxially oriented poly(ethylene terephthalate) (BOPET) films, despite their similar semicrystalline morphologies. BOPEN exhibits higher DC and AC breakdown strengths and markedly extended lifetimes at elevated temperatures. For instance, at 120 °C, the DC Weibull lifetime of BOPEN exceeded that of BOPET by over two orders of magnitude and even surpassed that of BOPP. Through comprehensive analyses—leakage current, electric displacement-electric field loops, and thermally stimulated depolarization current—we attribute this superior performance to suppressed homocharge injection and conduction losses, enabled by the rigid naphthalene-based backbone in BOPEN that reduces dipole mobility and chain polarity. These findings underscore the potential of BOPEN as a next-generation polymer dielectric for high-temperature capacitor applications.
This paper explores the development of innovative materials for the dielectric energy storage for space components. The CaCuN 3 Ti 4 O 12 or CCTO belonging to perovskite family is of interest due to its colossal dielectric constant. It was demonstrated that materials synthesized at low temperature show nonequilibrium state and exhibit differences in the dielectric and resistivity values. The goal is to obtain high dielectric constant along with high resistivity values for achieving enhanced breakdown voltage. By using other members of the perovskite structures, it was demonstrated that similar colossal dielectric constant is observed and is dependent on processing methods. We have used heterovalent and dissimilar sized atom to replace Ca +2 ion. Accordingly, we replaced Ca +2 ion with heavy Ga +3 ion and developed gallium-based material system, Ga 2/3 Cu 3 Ti 4 O 12 . Following successful synthesis, we measured its dielectric constant and resistivity and compared with CCTO material system. Results of five sets of samples showed that lower temperature processing demonstrated mechanism of grain growth, but due to copper flow in high temperature processed samples dielectric constant and resistivity values were different.
Spacecraft dielectric charging, sometimes called deep-dielectric-charging or bulk-charging, occurs when high energy electrons imbed themselves in dielectric materials, and the charge density builds up, sometimes to breakdown levels. Charges usually bleed off slowly due to material conductivity. At very low (cryogenic) temperatures, the dielectric conductivity decreases until charges may remain and build up over weeks, months, or years. In those cases, the guidelines given in NASA and industry documents for when dielectric charging may become important are misleading. Arcing tests of spacecraft cables at liquid nitrogen temperatures and very low flux levels have been done at NASA MSFC for the JWST Project. In this paper, we describe the results of those tests and analyze their important implications for cryogenic spacecraft cable design and construction.
Spacecraft dielectric charging, sometimes called deep-dielectric-charging or bulk-charging, occurs when high energy electrons imbed themselves in dielectric materials, and the charge density builds up, sometimes to breakdown levels. Charges usually bleed off slowly due to material conductivity. At very low (cryogenic) temperatures, the dielectric conductivity decreases until charges may remain and build up over weeks, months, or years. In those cases, the guidelines given in NASA and industry documents for when dielectric charging may become important are misleading. Arcing tests of spacecraft cables at liquid nitrogen temperatures and very low flux levels have been done at NASA MSFC for the JWST Project. In this paper, we describe the results of those tests and analyze their important implications for cryogenic spacecraft cable design and construction.
Conducting layers of multi-layered thin-film ferroelectric device, such as is used in liquid crystal/ferroelectric display, can be electrically isolated using thin-film layer of polyimide. Ease of application and high electrical-breakdown strength allow dependable and economical means of providing dielectric for other thin-film microelectronic devices.
Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.
Reliability of tantalum capacitors depends on the efficiency of self-healing that restores parts after breakdown. In this work, different types of polymer and MnO2 cathode capacitors have been tested for scintillation breakdown using a constant current stress (CCS) technique modified to allow detection of amplitudes and duration of current spikes. Monitoring of leakage currents with time under bias is used to assess the effect of scintillations. The appearance and composition of damaged sites have been examined after deprocessing and cross-sectioning. Thermal processes during scintillations have been analyzed, a mechanism of breakdown based on growth of conductive filaments in the dielectric suggested, and self-healing processes in polymer and MnO2 cathode capacitors discussed.
Demand for compact instrumentation, portable field equipment, and new electromagnetic weapons is creating a need for new dielectric materials with higher energy storage capabilities. Recognizing the need for higher energy storage capacitors, the Army Research Lab at Fort Monmouth, NJ, initiated a program a year ago to investigate potential methods for increasing the dielectric strength of polyvinylidene difluoride (PVDF) film, which is the highest energy density material commercially available today. Treatment of small area PVDF films in a CF4/O2 plasma showed that the dielectric strength of PVDF films can be increased by as much as 20 percent when treated in a 96 percent CF4/4 percent O2 plasma. This 44 percent increase in energy storage of a PVDF capacitor is significant considering that the treatment can be implemented in a conventional metallizing chamber, with minimum capital investment. The data shows that improved breakdown strength may be unique to PVDF film and the particular CF4/O2 gas mixture, because PVDF film treated with 100 percent CF4, 100 percent O2, Ar gas plasma, and electron irradiation shows no improvement in breakdown strength. Other data presented includes dissipation factor, dielectric constant, and surface tension measurements.
For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.