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At least 217 records · Page 12

Phase Contrast X‐Ray Imaging of the Collapse of an Engineered Void in Single‐Crystal HMX

Abstract Imaging the collapse of a single void that creates a hot spot initiation site in an otherwise defect‐free explosive is challenging given the spatial and temporal scales involved in explosive systems. This work presents our attempt to examine a single hot spot mode (void collapse) in single‐crystal octahydro‐l,3,5,7‐tetranitro‐l,3,5,7‐tetrazocine (HMX) embedded in Sylgard. The hot spot heating mechanisms involved with pore collapse include adiabatic heating, jetting, and viscoplastic dissipation. Quantifying the dynamics of a pore collapse is a crucial step to understanding which mechanisms dominate during ignition events. Our experiments were conducted with a single‐stage, light‐gas gun at Argonne National Laboratory's Advanced Photon Source, applying the phase contrast imaging technique while collecting high‐speed video. The details of HMX single crystal production, defect (pore) engineering, and sample construction, along with experimental results are presented here. These results demonstrate that detailed collapse dynamics can be obtained from homogeneous, single‐crystal explosives with this approach. Qualitative comparisons are made with simulation data which show good agreement in the transition between a quasi‐symmetric pore collapse and an asymmetric collapse with jetting across the pore as measured with normalized pore area and pore circularity.

42 ENGINEERING↗

Moiré engineering in van der Waals heterostructures

Isolated atomic planes can be assembled into a multilayer van der Waals (vdW) heterostructure in a precisely chosen sequence. These heterostructures feature moiré patterns if the constituent 2D material layers are stacked in an incommensurable way, due to a lattice mismatch or twist. This design-by-stacking has opened up the promising area of moiré engineering, a term that can be understood in two different perspectives, namely, (i) structural—engineering a moiré pattern by introducing twist, relative strain, or defects that affect the commensurability of the layers and (ii) functional—exploiting a moiré pattern to find and tune resulting physical properties of a vdW heterostructure. The latter meaning, referring to the application of a moiré pattern, is seen in the literature in the specific context of the observation of correlated electronic states and unconventional superconductivity in twisted bilayer graphene. The former meaning, referring to the design of the moiré pattern itself, is present in the literature but less commonly discussed or less understood. The underlying link between these two perspectives lies in the deformation field of the moiré superlattice. In this Perspective, we describe a path from designing a moiré pattern to employing the moiré pattern to tune physical properties of a vdW heterostructure. We also discuss the concept of moiré engineering in the context of twistronics, strain engineering, and defect engineering in vdW heterostructures. Although twistronics is always associated with moiré superlattices, strain and defect engineering are often not. Here, in this work, we demonstrate how strain and defect engineering can be understood within the context of moiré engineering. Adopting this perspective, we note that moiré engineering creates a compelling opportunity to design and develop multiscale electronic devices.

2D materials↗

Analysis of tow architecture variability in biaxially braided composite tubes

Spatial deviations in composite braid unit cell dimensions limit mechanical performance and are challenging to model. Full-field measurements of the irregular tow placement in biaxially braided composite tubes were obtained by digital image correlation. Analysis of the reconstructed tow paths showed long-range defects along the hoop direction with short-range defects dominating the biased tow direction. A route toward numerical simulation of the composite response is established by developing a 3D model of the composite using the measured tow trajectories. Finally, a comparison to previously-published triaxial braid results indicates axial tows work to constrain unit cells dimensions along the hoop direction.

3-Dimensional reinforcement↗

Band Structure-Driven Design of a α-CsPbI 3 Ammonia Sensor for Industrial Applications

We investigate the defect-dependent electronic structure and gas-sensing potential of cubic α-CsPbI 3 using first-principles density functional theory and nonadiabatic molecular dynamics. Among the intrinsic defects, interstitials, vacancies, antisites, and switches studied, the I Pb and Pb I antisite defects exhibit transition energy levels near the middle of the band gap, thus functioning as deep traps. Short-term adsorption of ammonia selectively modifies the electronic structure, coordinating with Pb at Pb I sites and Cs at I Pb sites, significantly altering recombination pathways. Detailed analysis reveals that NH 3 reduces anharmonicity at I Pb defects, enabling enhanced recombination at elevated temperatures, while trap-assisted recombination dominates at room temperature. Other analytes, including CH 3 NH 2 and NO 2 , show negligible impact on the band gap or recombination dynamics, highlighting the potential selectivity of NH 3 interactions. Ab initio nonadiabatic molecular dynamics simulations at 300 K and 600 K further demonstrate temperature-dependent modulation of carrier lifetimes, with NH 3 accelerating recombination at ambient conditions and suppressing certain pathways at higher temperatures. These findings suggest that α-CsPbI 3 can serve as a selective and sensitive ammonia sensor over a broad temperature range and offer insights for ammonia detection under industrially relevant conditions.

ammonia sensor↗

Refractive Imaging of Air Shock Above Microscale Defects in Pentaerythritol Tetranitrate (PETN) Films

Physical vapor deposition (PVD) of high explosives can produce energetic samples with unique microstructure and morphology compared to traditional powder processing techniques, but challenges may exist in fabricating explosive films without defects. Deposition conditions and substrate material may promote microcracking and other defects in the explosive films. Here, we investigate effects of engineered microscale defects (gaps) on detonation propagation and failure for pentaerythritol tetranitrate (PETN) films using ultra-high-speed refractive imaging and hydrocode modelling. Observations of the air shock above the gap reveal significant instabilities during gap crossing and re-ignition.

36 MATERIALS SCIENCE↗

Real-Time Identification of Oxygen Vacancy Centers in LiNbO 3 and SrTiO 3 during Irradiation with High Energy Particles

Oxygen vacancies are known to play a central role in the optoelectronic properties of oxide perovskites. A detailed description of the exact mechanisms by which oxygen vacancies govern such properties, however, is still quite incomplete. The unambiguous identification of oxygen vacancies has been a subject of intense discussion. Interest in oxygen vacancies is not purely academic. Precise control of oxygen vacancies has potential technological benefits in optoelectronic devices. In this review paper, we focus our attention on the generation of oxygen vacancies by irradiation with high energy particles. Irradiation constitutes an efficient and reliable strategy to introduce, monitor, and characterize oxygen vacancies. Unfortunately, this technique has been underexploited despite its demonstrated advantages. This review revisits the main experimental results that have been obtained for oxygen vacancy centers (a) under high energy electron irradiation (100 keV–1 MeV) in LiNbO 3 , and (b) during irradiation with high-energy heavy (1–20 MeV) ions in SrTiO 3 . In both cases, the experiments have used real-time and in situ optical detection. Moreover, the present paper discusses the obtained results in relation to present knowledge from both the experimental and theoretical perspectives. Our view is that a consistent picture is now emerging on the structure and relevant optical features (absorption and emission spectra) of these centers. One key aspect of the topic pertains to the generation of self-trapped electrons as small polarons by irradiation of the crystal lattice and their stabilization by oxygen vacancies. What has been learned by observing the interplay between polarons and vacancies has inspired new models for color centers in dielectric crystals, models which represent an advancement from the early models of color centers in alkali halides and simple oxides. The topic discussed in this review is particularly useful to better understand the complex effects of different types of radiation on the defect structure of those materials, therefore providing relevant clues for nuclear engineering applications.

36 MATERIALS SCIENCE↗

Laser Heat Treatment of Ferrocarbon Powder Steel

The laser heat treatment of sintered ZhGr ferrocarbon powder steel with different porosity is considered. The microstructure and microhardness of the steel are determined, and the defects arising in laser treatment are studied.

42 ENGINEERING↗

Locally Engineering and Interrogating the Photoelectrochemical Behavior of Defects in Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are attractive materials for a variety of applications in solar energy conversion and electrocatalysis, due to their favorable optical and electrical properties and their unique two-dimensional structures which facilitate the fabrication of wide-area, ultrathin layers. Unfortunately, the basal planes which make up the majority of these materials are relatively inert, and thus a great deal of effort has been directed to engineering favorable, catalytically active defects into these materials. In this paper, we demonstrate how probe-based electrochemical techniques can be employed as multifunctional tools for locally modifying TMD materials and probing the electrochemical behavior of the resulting defects. Scanning Electrochemical Cell Microscopy (SECCM) was employed to locally anodize exfoliated p-type WSe 2 nanosheets, creating hole-like defects within individual basal planes in a highly controllable fashion. Photoelectrochemical SECCM imaging was then employed to characterize the chemical behavior of these engineered defects, revealing significantly enhanced activity toward the Hydrogen Evolution Reaction (HER). Atomic force microscopy studies are presented which suggest these enhancements result from an increased density of monolayer-high step features within the anodized defects. Analysis of the SECCM data in the context of finite element simulations revealed that these enhancements increased with increasing anodization time, with local kinetic rates over 2 orders of magnitude higher than unaltered basal planes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Contrasting SnTe–NaSbTe 2 and SnTe–NaBiTe 2 Thermoelectric Alloys: High Performance Facilitated by Increased Cation Vacancies and Lattice Softening

Defect chemistry is critical to designing high performance thermoelectric materials. In SnTe, the naturally large density of cation vacancies results in excessive hole doping and frustrates the ability to control the thermoelectric properties. Yet, recent work also associates the vacancies with suppressed sound velocities and low lattice thermal conductivity, underscoring the need to understand the interplay between alloying, vacancies, and the transport properties of SnTe. Here, we report solid solutions of SnTe with NaSbTe 2 and NaBiTe 2 (NaSn m SbTe m +2 and NaSn m BiTe m +2 , respectively) and focus on the impact of the ternary alloys on the cation vacancies and thermoelectric properties. We find introduction of NaSbTe 2 , but not NaBiTe 2 , into SnTe nearly doubles the natural concentration of Sn vacancies. Furthermore, DFT calculations suggest that both NaSbTe 2 and NaBiTe 2 facilitate valence band convergence and simultaneously narrow the band gap. These effects improve the power factors but also make the alloys more prone to detrimental bipolar diffusion. Indeed, the performance of NaSn m BiTe m +2 is limited by strong bipolar transport and only exhibits modest maximum ZTs ≈ 0.85 at 900 K. In NaSn m SbTe m +2 however, the doubled vacancy concentration raises the charge carrier density and suppresses bipolar diffusion, resulting in superior power factors than those of the Bi-containing analogues. Lastly, NaSbTe 2 incorporation lowers the sound velocity of SnTe to give glasslike lattice thermal conductivities. Facilitated by the favorable impacts of band convergence, vacancy-augmented hole concentration, and lattice softening, NaSn m SbTe m +2 reaches high ZT ≈ 1.2 at 800–900 K and a competitive average ZT avg of 0.7 over 300–873 K. The difference in ZT between two chemically similar compounds underscores the importance of intrinsic defects in engineering high-performance thermoelectrics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Band-edge Engineering to Eliminate Radiation-Induced Defect States in Perovskite Scintillators

Under radiative environments such as extended hard X- or γ-rays, degradation of scintillation performance is often due to irradiation-induced defects. To overcome the effect of deleterious defects, novel design mitigation strategies are needed to identify and design more resilient materials. The potential for band-edge engineering to eliminate the effect of radiation-induced defect states in rare-earth-doped perovskite scintillators is explored, taking Ce 3+ -doped LuAlO 3 as a model material system, using density functional theory (DFT)-based DFT + U and hybrid Heyd–Scuseria–Ernzerhof (HSE) calculations. Furthermore, from spin-polarized hybrid HSE calculations, the Ce 3+ activator ground-state 4f position is determined to be 2.81 eV above the valence band maximum in LuAlO 3 . Except for the oxygen vacancies which have a deep level inside the band gap, all other radiation-induced defects in LuAlO 3 have shallow defect states or are outside the band gap, that is, relatively far away from either the 5d 1 or the 4f Ce 3+ levels. Finally, we examine the role of Ga doping at the Al site and found that LuGaO 3 has a band gap that is more than 2 eV smaller than that of LuAlO 3 . Specifically, the lowered conduction band edge envelopes the defect gap states, eliminating their potential impact on scintillation performance and providing direct theoretical evidence for how band-edge engineering could be applied to rare-earth-doped perovskite scintillators.

36 MATERIALS SCIENCE↗

Formation and dissociation of shear-induced high-energy dislocations: insight from molecular dynamics simulations

Solid-phase processing (SPP) allows one to create complex microstructures, not achievable via thermal processing alone. The resulting structures exhibit a rich palette of defects, both thermal and non-thermal, including defect substructures, such as dislocation networks. It is essential to understand the mechanisms of deformation and defect structure formation to guide SPP towards achieving desired microstructures and material properties. In this study, large-scale molecular dynamics simulations are used to investigate the effects of inhomogeneous strain distribution, that mimics deformation conditions of tribological tests, on the evolution of defects under severe shear deformation in polycrystalline Al. Analysis of defect nucleation and reaction pathways reveals that strong geometric constraints suppress the nucleation and slide of low energy dislocation 1/2$\langle110\rangle${111} but promote the nucleation and slide of high energy dislocations, such as [$1\bar1$0] (001) and 1/2 [$1\bar1$$\bar2$]($1\bar1$1). Further, a rough contact surface, characteristic to tribological tests, imposes an inhomogeneous stress field leading to inhomogeneous defect substructures due to location-dependent activation of slip systems. The results suggest that high-energy dislocations can dominate the evolution of grain structures in highly constrained environments, which should be considered in modeling plastic deformation and grain refinement during SPP.

42 ENGINEERING↗

Investigations of irradiation effects in crystalline and amorphous SiC

The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au 3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.

3C-SiC↗

Phase transition in two-dimensional monolayer (1L)-molybdenum disulfide induced by atomic S-basal plane gliding via synchrotron X-ray monochromatic beam radiation for superior electronic performance

Here, in this work, we report a novel approach to reduce the channel resistance by inducing a phase transition behavior from 2H to 1T in a monolayer MoS 2 (1L-MoS 2 ) by a synchrotron X-ray monochromatic beam (mono-beam) radiation. The effects of the biphase structure by the mono-beam on the 1L-MoS2 film were investigated using Raman spectra, photoluminescence (PL) spectra, scanning tunneling microscopy, and scanning tunneling spectroscopy, respectively. Through material characterization, we identified that the lateral sliding of S-vacancies along the S-plane in the 1L-MoS 2 is the key reason for the origin of unidirectional phase transition. The precise phase engineering triggered by the mono-beam radiation process allows the realization of field-effect transistors (FET) with 2X improvement in mobility toward a high on/off ratio (~10 8 ) and a near-ideal subthreshold swing of ~88 mV per decade. The validity of the phase engineering could be further extended for its application as a memory device, exhibiting a gate tunable conduction modulation behavior and a high resistance ratio of ~10 2 at a gate bias of 5 V with endurance of ~100 cycles. Furthermore, an artificial neural network using the synaptic weight update with accuracy of ~93 % was achieved.

36 MATERIALS SCIENCE↗

Infusible Thermoplastic Composites for Wind Turbine Blade Manufacturing: Fatigue Life of Thermoplastic Laminates under Ambient and Low-Temperature Conditions

Traditionally, thermoset resins such as polyesters (PE) and epoxies are used as the polymer matrix for construction of wind turbine blades. However, concern about their end-of-life treatment garners interest to use thermoplastics for increased recyclability. However, the high viscosity of molten thermoplastics inhibits their use in manufacturing wind turbine blades with injection or compression molding. A recently developed, infusible, reactive thermoplastic resin overcomes this technological barrier. Toward verifying that this recyclable resin is suitable for use in wind turbine blades, a dataset of R?=?0.1 and R?=?10 fatigue data for glass fiber-reinforced acrylic composites is provided and equal fatigue life to industry standard epoxy and unsaturated PE resin systems is demonstrated. Specifically, R?=?0.1 fatigue data for acrylic composites at room temperature and -30?degrees C for verification of low-temperature performance are tabulated. To elucidate failure mechanisms, in situ mechanical testing with X-ray computed tomography demonstrates that damage accumulation occurs by crack propagation along the fiber-matrix interface under cyclic loading. Infrared (IR) thermography predicts failure points in composites specimens with porosity defects introduced from nonideal manufacturing processes. Furthermore, these manufacturing defects are shown to compromise the fatigue life of the acrylic laminates by an order of magnitude.

effect of defects↗

Reliability Improvement and Effective Switching Layer Model of Thin-Film MoS 2 Memristors

2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors. Here, the impact of metallization conditions and the thickness of MoS 2 films on the reliability and other device metrics of MoS 2 -based memristors is carefully studied. The statistical electrical measurements show that the reliability can be improved to 92% for yield and improved by ≈16× for average DC cycling endurance in the devices by reducing the top electrode (TE) deposition rate and increasing the thickness of MoS 2 films. Intriguing convergence of switching voltages and resistance ratio is revealed by the statistical analysis of experimental switching cycles. An “effective switching layer” model compatible with both monolayer and few-layer MoS 2 , is proposed to understand the reliability improvement related to the optimization of fabrication configuration and the convergence of switching metrics. In conclusion, the Monte Carlo simulations help illustrate the underlying physics of endurance failure associated with cluster formation and provide additional insight into endurance improvement with device fabrication optimization.

36 MATERIALS SCIENCE↗

Defect‐Induced, Ferroelectric‐Like Switching and Adjustable Dielectric Tunability in Antiferroelectrics

Abstract Antiferroelectrics, which undergo a field‐induced phase transition to ferroelectric order that manifests as double‐hysteresis polarization switching, exhibit great potential for dielectric, electromechanical, and electrothermal applications. Compared to their ferroelectric cousins, however, considerably fewer efforts have been made to understand and control antiferroelectrics. Here, it is demonstrated that the polarization switching behavior of an antiferroelectric can be strongly influenced and effectively regulated by point defects. In films of the canonical antiferroelectric PbZrO 3 , decreasing oxygen pressure during deposition (and thus increasing adatom kinetic energy) causes unexpected “ferroelectric‐like” polarization switching although the films remain in the expected antiferroelectric orthorhombic phase. This “ferroelectric‐like” switching is correlated with the creation of bombardment‐induced point‐defect complexes which pin the antiferroelectric–ferroelectric phase boundaries, and thus effectively delay the phase transition under changing field. The effective pinning energy is extracted via temperature‐dependent switching‐kinetics studies. In turn, by controlling the concentration of defect complexes, the dielectric tunability of the PbZrO 3 can be adjusted, including being able to convert between “positive” and “negative” tunability near zero field. This work reveals the important role and strong capability of defects to engineer antiferroelectrics for new performance and functionalities.

Pan, Hao↗

Suppressed Lone Pair Electrons Explain Unconventional Rise of Lattice Thermal Conductivity in Defective Crystalline Solids

Manipulating thermal properties of materials can be interpreted as the control of how vibrations of atoms (known as phonons) scatter in a crystal lattice. Compared to a perfect crystal, crystalline solids with defects are expected to have shorter phonon mean free paths caused by point defect scattering, leading to lower lattice thermal conductivities than those without defects. While this is true in many cases, alloying can increase the phonon mean free path in the Cd-doped AgSnSbSe 3 system to increase the lattice thermal conductivity from 0.65 to 1.05 W m –1 K –1 by replacing 18% of the Sb sites with Cd. It is found that the presence of lone pair electrons leads to the off-centering of cations from the centrosymmetric position of a cubic lattice. X-ray pair distribution function analysis reveals that this structural distortion is relieved when the electronic configuration of the dopant element cannot produce lone pair electrons. Furthermore, a decrease in the Grüneisen parameter with doping is experimentally confirmed, establishing a relationship between the stereochemical activity of lone pair electrons and the lattice anharmonicity. The observed “harmonic” behavior with doping suggests that lone pair electrons must be preserved to effectively suppress phonon transport in these systems.

36 MATERIALS SCIENCE↗