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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

AI-enhanced Codesign for Next-Generation Neuromorphic Circuits and Systems

This report details work that was completed to address the Fiscal Year 2022 Advanced Science and Technology (AS&T) Laboratory Directed Research and Development (LDRD) call for “AI-enhanced Co-Design of Next Generation Microelectronics.” This project required concurrent contributions from the fields of 1) materials science, 2) devices and circuits, 3) physics of computing, and 4) algorithms and system architectures. During this project, we developed AI-enhanced circuit design methods that relied on reinforcement learning and evolutionary algorithms. The AI-enhanced design methods were tested on neuromorphic circuit design problems that have real-world applications related to Sandia’s mission needs. The developed methods enable the design of circuits, including circuits that are built from emerging devices, and they were also extended to enable novel device discovery. We expect that these AI-enhanced design methods will accelerate progress towards developing next-generation, high-performance neuromorphic computing systems.

42 ENGINEERING↗
DOE OSTI2024

Qutrit Circuits and Algebraic Relations: A Pathway to Efficient Spin-1 Hamiltonian Simulation

Quantum information processing has witnessed significant advancements through the application of qubit- based techniques within universal gate sets. Recently, exploration beyond the qubit paradigm to d-dimensional quantum units or qudits has opened new avenues for improving computational efficiency. This paper delves into the qudit-based approach, particularly addressing the challenges presented in the high-fidelity implementation of qudit-based circuits due to increased complexity. As an innovative approach towards enhancing qudit circuit fidelity, we explore algebraic relations, such as the Yang-Baxter-like turnover equation, which may enable circuit compression and optimization. The paper introduces the turnover relation for the three-qutrit time propagator and its potential use in reducing circuit depth. We further investigate whether this relation can be generalized for higher-dimensional quantum circuits, including a focused study on the one-dimensional spin-1 Heisenberg model. Our paper outlines both rigorous and numerically efficient approaches to potentially achieve this generalization, providing a foundation for further explorations in the field of qudit-based quantum computing.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Assessing Inverter-Based Resources Modeling Gaps in Commonly Used Short-Circuit Programs

Future bulk power systems are expected to operate with a high penetration of inverter-based resources (IBR). This is anticipated to fundamentally change the system’s short-circuit behaviors and demand a change in existing transmission line protection settings or schemes. Phasor-domain short circuit programs (e.g., ASPEN, CAPE, and CYME) remain the mainstream tools for developing protection settings. However, the system protection community has shared concerns about the accuracy of IBR models in short-circuit programs. This report compares the performance of existing generic IBR models in short-circuit programs with detailed electro-magnetic transient (EMT) models provided by several different IBR manufacturers in PSCAD, to quantify the short-circuit program’s IBR model accuracy, assess their ability to replicate individual IBR controls such as negative sequence current injections, and identify specific gaps in the existing generic phasor-domain IBR models that are currently available.

42 ENGINEERING↗
DOE OSTI2021

Clifford Circuit Optimization with Templates and Symbolic Pauli Gates

The Clifford group is a finite subgroup of the unitary group generated by the Hadamard, the CNOT, and the Phase gates. This group plays a prominent role in quantum error correction, randomized benchmarking protocols, and the study of entanglement. Here we consider the problem of finding a short quantum circuit implementing a given Clifford group element. Our methods aim to minimize the entangling gate count assuming all-to-all qubit connectivity. First, we consider circuit optimization based on template matching and design Clifford-specific templates that leverage the ability to factor out Pauli and SWAP gates. Second, we introduce a symbolic peephole optimization method. It works by projecting the full circuit onto a small subset of qubits and optimally recompiling the projected subcircuit via dynamic programming. CNOT gates coupling the chosen subset of qubits with the remaining qubits are expressed using symbolic Pauli gates. Software implementation of these methods finds circuits that are only 0.2% away from optimal for 6 qubits and reduces the two-qubit gate count in circuits with up to 64 qubits by 64.7% on average, compared with the Aaronson-Gottesman canonical form.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Simultaneous estimation of multiple eigenvalues with short-depth quantum circuit on early fault-tolerant quantum computers

We introduce a multi-modal, multi-level quantum complex exponential least squares (MM-QCELS) method to simultaneously estimate multiple eigenvalues of a quantum Hamiltonian on early fault-tolerant quantum computers. Our theoretical analysis demonstrates that the algorithm exhibits Heisenberg-limited scaling in terms of circuit depth and total cost. Notably, the proposed quantum circuit utilizes just one ancilla qubit, and with appropriate initial state conditions, it achieves significantly shorter circuit depths compared to circuits based on quantum phase estimation (QPE). Numerical results suggest that compared to QPE, the circuit depth can be reduced by around two orders of magnitude under several settings for estimating ground-state and excited-state energies of certain quantum systems.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Random Circuits in the Black Hole Interior

In this paper, we present a quantitative holographic relation between a microscopic measure of randomness and the geometric length of the wormhole in the black hole interior. To this end, we perturb an AdS black hole with Brownian semiclassical sources, implementing the continuous version of a random quantum circuit for the black hole. We use the random circuit to prepare ensembles of states of the black hole whose semiclassical duals contain Einstein-Rosen (ER) caterpillars: long cylindrical wormholes with large numbers of matter inhomogeneities, of linearly growing length with the circuit time. In this setup, we show semiclassically that the ensemble of ER caterpillars of average length $k\ell_Δ$ and matter correlation scale $\ell_Δ$ forms an approximate quantum state $k$-design of the black hole. At exponentially long circuit times, the ensemble of ER caterpillars becomes polynomial-copy indistinguishable from a collection of random states of the black hole. We comment on the implications of these results for holographic circuit complexity and for the holographic description of the black hole interior.

FOS: Physical sciences↗
NASA NTRS1970

Solid state remote circuit selector switch

Remote switching circuit utilizes voltage logic to switch on desired circuit. Circuit controls rotating multi-range pressure transducers in jet engine testing and can be used in coded remote circuit activator where sequence of switching has to occur in defined length of time to prevent false or undesired circuit activation.

Peterson, V. S.↗
NASA NTRS1970

Man-machine interactive system simplifies computer-aided circuit design

Langley interactive computerized circuit analysis capability /LICCA/ enables designer to draw electronic circuit diagrams on cathode ray tube screen. This information is submitted as input to user-selected circuit analysis program. LICCA accommodates binary logic circuits and circuits with discrete components, and monitors operator's instructions to detect errors.

Bavuso, S. J.↗
NASA NTRS1971

Radiation damage in MOS integrated circuits, Part 1

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Danchenko, V.↗
NASA NTRS1976

Modular design of high frequency circuits

Method of circuit development separates electrical functions into noninterdependent parts, uses standard, commercially available circuit elements, and establishes unified circuit-packaging arrangement. Packaging scheme is cost-effective, does not compromise electrical circuit performance from video to UHF frequencies, and leaves circuits accessible for modification and adjustment.

Zimmer, J. T.↗
NASA NTRS1977

A nickel-cadmium battery reconditioning circuit

The circuit presented is simple and small enough to be included in a typical battery charge/power control assembly, yet provides the advantage of a complete ground-type battery reconditioning discharge. Test results on the circuit when used to recondition two 24 cell, 20 A-h nickel-cadmium batteries are given. These results show that a battery reconditioned with this circuit returns to greater than 90 percent of its original capacity (greater than nameplate capacity) and follows a typical new battery degradation curve even after over 20,000 simulated orbital cycles for a 4 year period. Applications of the circuit are considered along with recommendations relative to its use. Its application in low voltage (22 to 36 Vdc) power systems and in high voltage (100 to 150 Vdc) power systems is discussed. The implications are that the high voltage systems have a greater need for battery reconditioning than their low voltage counterparts, and that using these circuit techniques, the expected life of a battery in low Earth orbit can be up to 5 years.

Lanier, R.↗
NASA NTRS1979

Method for analyzing radiation sensitivity of integrated circuits

A method for analyzing the radiation sensitivity of an integrated circuit is described to determine the components. The application of a narrow radiation beam to portions of the circuit is considered. The circuit is operated under normal bias conditions during the application of radiation in a dosage that is likely to cause malfunction of at least some transistors, while the circuit is monitored for failure of the irradiated transistor. When a radiation sensitive transistor is found, then the radiation beam is further narrowed and, using a fresh integrated circuit, a very narrow beam is applied to different parts of the transistor, such as its junctions, to locate the points of greatest sensitivity.

Gauthier, M. K.↗
NASA NTRS1981

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Valco, G. J.↗
NASA NTRS1983

An improved logarithmic amplifier circuit for PDS microdensitometers

A high-speed logarithmic-amplifier circuit for a PDS microdensitometer is discussed. The circuit is designed around a 757P log-amp module which replaces the FMI 531 'Negative Log/Anti-log' device of the original. The new amplifier is capable of producing undistorted profiles of rapidly changing, dense images over the available range of scanning speeds. The circuit board has been designed to directly replace the manufacturer supplied unit; neither electrical nor mechanical modifications of the basic PDS are required. The performance of the circuit is illustrated through its effects on the overall Modulation Transfer Function of the instrument and by scans of a well-exposed stellar image. Circuit diagrams and parts lists are presented.

Anderson, C. M.↗
NASA NTRS1985

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

Buehler, M. G.↗
NASA NTRS1986

Coating Circuit Boards With Silicone

Techniques appropriate to boards containing CMOS circuits detailed. Document presents procedure for applying thin conformal coating to such electronic assemblies as printed-circuit boards and wire-wrapped boards. Coating is from 1 to 7 mils (25 to 178 micrometers) thick and composed of room-temperature-vulcanizing (RTV) silicone. Specifies materials, equipment, spraying method, and quality requirements. Takes into account special needs of circuits made with complementary metal-oxide/semiconductor (CMOS) devices on circuit boards. Special attention given to preventing damage by electrostatic discharge, to which CMOS circuits especially sensitive.

Gaudiano, S.↗
NASA NTRS1986

Solenoid-Simulation Circuit

Electrical properties of solenoids imitated for tests of control circuits. Simulation circuit imitates voltage and current responses of two engine-controlling solenoids. Used in tests of programs of digital engine-control circuits, also provides electronic interface with circuits imitating electrical properties of pressure sensors and linear variable-differential transformers. Produces voltages, currents, delays, and discrete turnon and turnoff signals representing operation of solenoid in engine-control relay. Many such circuits used simulating overall engine circuitry.

Simon, R. A.↗
NASA NTRS1986

Four-micron period ion-implanted bubble test circuits

Packaged magnetic bubble test circuits made with 4-micron period ion-implanted circuits were operated over -55 to +110 C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films with lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive read-out detection was not realized with these 'flat' bubbles.

Nelson, T. J.↗