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At least 217 records · Page 12

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DOE OSTI2025

Room-temperature multiferroicity in sliding van der Waals semiconductors with sub-0.3 V switching

The search for van der Waals (vdW) multiferroic materials has been challenging but also holds great potential for the next-generation multifunctional nanoelectronics. The group-IV monochalcogenide, with an anisotropic puckered structure and an intrinsic in-plane polarization at room temperature, manifests itself as a promising candidate with coupled ferroelectric and ferroelastic order as the basis for multiferroic behavior. Unlike the intrinsic centrosymmetric AB stacking, we demonstrate a multiferroic phase of tin selenide (SnSe), where the inversion symmetry breaking is maintained in AA-stacked multilayers over a wide range of thicknesses. We observe that an interlayer-sliding-induced out-of-plane (OOP) ferroelectric polarization couples with the in-plane (IP) one, making it possible to control out-of-plane polarization via in-plane electric field and vice versa. Notably, thickness scaling yields a sub-0.3 V ferroelectric switching, which promises future low-power-consumption applications. Furthermore, coexisting armchair- and zigzag-like structural domains are imaged under electron microscopy, providing experimental evidence for the degenerate ferroelastic ground states theoretically predicted. Non-centrosymmetric SnSe, as the first layered multiferroic at room temperature, provides a novel platform not only to explore the interactions between elementary excitations with controlled symmetries, but also to efficiently tune the device performance via external electric and mechanical stress.

Chen, Rui [University of California, Berkeley, CA ↗

DOE OSTI2022

A review of active probing-based system identification techniques with applications in power systems

System identification is becoming a relevant research area for numerous applications in power grids due to the increasing complexity of the system. A paradigm shift in power system infrastructure driven by renewable energy resources, controllable loads, and new power electronics technologies have given rise to new challenges in power systems operation and control. This increased complexity of power systems and unavailability of physics-based models of most inverter-based resources requires that traditional modeling of power systems approaches be complemented by system identification-based black or grey box modeling techniques. In light of the importance of system identification and little attention paid to the applications of these techniques in transforming power systems, this paper provides a comprehensive review of active probing-based system identification methods in the context of power system applications. It reviews applications of both linear and nonlinear system identification with discussion on their potential and key takeaways. To motivate a further practical use in power systems, the paper provides an example of system identification, to develop a state space model of an unknown plant with step-by-step details. The paper highlights the advantages of using modern power electronics-based sources in the identification process and discusses the emerging research directions for future.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2023

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal–insulator–semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf 0.5 Zr 0.5 O 2 (HZO) as a gate dielectric. Compared with Schottky gate HEMT, the MISHEMT with a gate length (L G ) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (I ON /I OFF ) of 9.3 × 10 7 , a subthreshold swing of 130 mV dec -1 , a low drain-induced barrier lowing of 45 mV V -1 , and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (f T ) of 155 GHz and a maximum oscillation frequency (f max ) of 250 GHz, resulting in high (f T × f max ) 1/2 of 197 GHz and the record high Johnson's figure-of-merit (JFOM = f T × BV) of 5.4 THz V among the reported GaN MISHEMTs on Si. Further, the power performance at 30 GHz exhibits a maximum output power of 1.36 W mm -1 , a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.

42 ENGINEERING↗

DOE OSTI2026

Design of a 915 MHz conduction-cooled cryomodule

High-power, compact, continuous-wave (CW) linear electron accelerators with beam energies of up to 10 MeV are being considered for possible industrial applications. Conduction-cooled, superconducting radio-frequency (SRF) technology allows operating such machines at high electrical efficiency, thereby reducing the operating cost significantly. A prototype conduction-cooled SRF cryomodule has been designed and components are currently being manufactured. The cryomodule features a two-cell, 915 MHz SRF cavity, two cryocoolers, a fundamental power coupler, two magnetic shields, a thermal shield and warm-to-cold transitions. The cryomodule has been designed to be able to provide an energy gain of 3.5 MeV to a CW electron beam with a current of 5 mA. This contribution focusses on thermal and mechanical design aspects of the cryomodule.

Ciovati, G. [Old Dominion Univ., Norfolk, VA (Unit↗

DOE OSTI2025

Design of a 915 MHz conduction-cooled cryomodule

Ciovati, G. [Old Dominion Univ., Norfolk, VA (Unit↗

DOE OSTI2021

A study on the creep behavior of alloy 709 using in-situ scanning electron microscopy

In this research, an experimental evaluation of creep properties of Alloy 709 in the temperature range of 750–850 °C was undertaken. Alloy 709 is a novel austenitic stainless steel with 20% Cr and 25% Ni by wt% that was developed for application in structural components of nuclear power plants. Creep rupture tests were conducted in an in-situ heating-loading and Scanning Electron Microscope (SEM) unit equipped with Electron Backscatter Diffraction (EBSD) detector and Energy Dispersive Spectroscopy (EDS). “Real-time” creep damage mechanisms of Alloy 709 at various stresses and temperatures using a flat, un-notched sample with continuously reducing cross-section is studied so that the failure and maximum creep damage occurred at the center of the sample where the in-situ SEM imaging could be focused. Accelerated creep tests at temperatures and stresses above service conditions were performed by employing multiple blocks of constant loads where the loads were increased once the sample attained constant creep rate, indicating a secondary creep regime. This technique ensures multiple data points can be obtained from the same test, saves the time required for an otherwise long-term creep test and usage of SEM. Further, Coincident Site Lattice (CSL) boundary maps were collected as control maps before testing, and the grain boundaries were observed during the creep test to understand the effect of grain boundary character on the creep damage mechanism. Void growth, grain boundary separation, and sliding were found to be the main creep mechanisms whose rate is dependent on stress and temperature. Failure mechanisms studied on the fracture surface using SEM fractography were correlated to the sample surface observations to create complementary information to better understand the underline creep mechanism of Alloy 709.

36 MATERIALS SCIENCE↗

DOE OSTI2025

First-Principles Simulations Correlating X-ray Absorption Spectroscopy Features to Point Defects in h -BN

Hexagonal boron nitride (h-BN) is a promising material for a range of emerging applications in electronics, quantum information technology, and energy storage. Soft X-ray absorption spectroscopy (XAS) is powerful to reveal atomic details of BN, especially in the presence of defects. However, correlating XAS spectral features with specific defect types remains elusive. In this Letter, we report B K-edge XAS measurements of sputter-deposited turbostratic h-BN films and use a combination of first-principles spectroscopic simulations and analysis of detailed electronic structure and local charge transfer characteristics to elucidate their unique spectroscopic features. Our results show that the two main defect-related peaks, between the main π* resonances of h-BN and B2O3, as typically observed in BN films deposited by energetic condensation or bombarded with energetic ions, are associated with electronic states of H-passivated B atoms bonded to one and two oxygen impurity atoms, respectively. These conclusions hold significant implications for applications relying on defect-mediated properties of h-BN.

chemical structure↗

DOE OSTI2022

Mixed stochastic-deterministic time-dependent density functional theory: application to stopping power of warm dense carbon

Warm dense matter (WDM) describes an intermediate phase, between condensed matter and classical plasmas, found in natural and man-made systems. In a laboratory setting, WDM is often created dynamically. It is typically laser or pulse-power generated and can be difficult to characterize experimentally. Measuring the energy loss of high energy ions, caused by a WDM target, is both a promising diagnostic and of fundamental importance to inertial confinement fusion research. However, electron coupling, degeneracy, and quantum effects limit the accuracy of easily calculable kinetic models for stopping power, while high temperatures make the traditional tools of condensed matter, e.g. time-dependent density functional theory (TD-DFT), often intractable. In this study, we have developed a mixed stochastic-deterministic approach to TD-DFT which provides more efficient computation while maintaining the required precision for model discrimination. Recently, this approach showed significant improvement compared to models when compared to experimental energy loss measurements in WDM carbon. Here, we describe this approach and demonstrate its application to warm dense carbon stopping across a range of projectile velocities. We compare direct stopping-power calculation to approaches based on combining homogeneous electron gas response with bound electrons, with parameters extracted from our TD-DFT calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Runtime power allocation approach for GAMESS hybrid CPU‐GPU implementation

Summary To improve power consumption of applications at the runtime, modern processors provide frequency scaling capabilities, which along with workload optimization, are also available on GPU accelerators. In this work, a runtime strategy is proposed to distribute a given power allocation among the host components and the GPU according to the current application performance and power usage, such that GPU execution is prioritized over CPU for power allocation to maximize application performance. Next, the strategy is tailored to an application, a quantum‐chemistry package GAMESS for ab initio electronic structure calculations. Specifically, GAMESS hybrid CPU–GPU implementation as provided in the Libcchem library is considered. Experiments, performed on a 28‐core node with a Kepler GPU, resulted in performance gains of up to 50% under the proposed strategy and the largest power allocation considered here as compared with the scenario when this allocation was equally distributed among the computing‐platform components.

Sundriyal, Vaibhav↗

DOE OSTI2023

Electrical Fault Detection, Power Quality, Distributed Energy Resource Use Cases, and Cyber Event Applications with the Cyber Grid Guard System Using Distributed Ledger Technology

Electrical utilities continue to deploy more intelligent electronic devices (IEDs) inside and outside electrical substation and are associated with distributed energy resources (DERs). The integrity and confidentiality of data from IEDs is crucial, and distributed ledger technology (DLT) could improve the resilience of microgrids by helping to make these data more secure. The most popular applications using blockchain technology for electrical utilities is in the field is based on energy trading. However, the dynamism of the penetration of customer owned DERs and the deployment of sensors with IEDs have led to the identification of new applications using DLT that are focused on other areas, such as monitoring, operation and management of the grid and its assets. In addition, the majority of studies on electrical grid applications with blockchain were validated with software simulations. Although general monitoring of power systems for using DLT could be evaluated in operational electric grids, other DLT research applications such as defense against cyber-attacks and/or electrical fault detection are not likely to be performed in a real infrastructure because of possible risks to the network/equipment security. This report summarizes the application of power system applications using distributed ledger technology (DLT), providing a secure DLT framework for collecting data from IEDs like power meters and protective relays inside and outside of an electrical substation and/or between two different electrical utilities. In this study, the use case scenarios were created and assessed for different power system application by using DLT. The electrical fault detection for faulted phases (1), power quality monitoring of phase voltage magnitudes, frequency levels and load power factor (2), DERs use case monitoring (3), and cyber-event applications (4) were performed in a test bed with a Cyber-Grid Guard (CGG) system using DLT. It had a real-time simulator with power meters and protective relays in-the-loop. The first section of this report presents a literature review of power system applications using blockchain at research level. The second section shows the theory and equations used on this report. The third section shows the description of the test bed, equipment, architecture, and electrical grid diagrams. The fourth section shows the experimental models and use case scenarios that were performed for the electrical fault detection, power quality, DERs use case, and cyber event applications with the CGG system using DLT. The fifth section shows the results collected from the tests based on comparing the time stamped events of the analog signals from the IEDs, DLT computer and real time simulator. The sixth section performed the discussion of the results for the use case scenarios. Finally, section seven presents the conclusions for this report were presented.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2025

A Novel High-Temperature Generator/Motor Design: With Applications in Geothermal Drilling and Other Industries

The National Renewable Energy Laboratory (NREL), in partnership with Tetra Corporation and TPL Inc, has an ongoing ARPA-E project related to an advanced high-temperature geothermal drilling system, and the power electronics necessary for this system. As part of this work, NREL designed, built and tested a high-temperature generator for power generation in a 250 degrees Celsius downhole drilling environment. This design exceeded initial performance targets at elevated temperature. NREL is investigating alternative applications for this design, as either a generator or motor capable of efficient performance at high temperature.

alternator↗

DOE OSTI2025

In-situ L-TEM observations of dynamics of nanometric skyrmions and antiskyrmions

Nanometer-scale magnetic skyrmions and antiskyrmions exhibit unique dynamical behaviors in response to external stimuli, which are critical for their applications in low-power-consumption spintronic devices. This review discusses recent advancements in in-situ Lorentz transmission electron microscopy (L-TEM) observations of skyrmion and antiskyrmion dynamics, and demonstrates the manipulation and evolution of these textures in various magnetic materials under electric, magnetic, and thermal stimuli. Specifically, the motion tracking of single skyrmions and their clusters, and the deformation and transformation of skyrmions has been demonstrated in chiral helimagnets FeGe, Co 9 Zn 9 Mn 2 , and Co 10 Zn 10 with precise application of electric currents. Skyrmions can undergo dynamic transitions in current-driven skyrmion motions, from pinned states to linear flows, and even exhibit deformation into elliptical shapes, underscoring their topological robustness and dynamic flexibility. In addition, the manipulation of single antiskyrmions and antiskyrmion-lattice phases in (Fe 0.63 Ni 0.3 Pd 0.07 ) 3 P with S 4 symmetry is discussed, highlighting their high mobility and unique sliding capabilities along stripe domains at room temperature, facilitated by nanosecond pulsed electric currents. Finally, the temperature gradient-driven motion and topological transformation of elliptical skyrmions and antiskyrmions in this same material are investigated. In conclusion, the comprehensive insights gained from the L-TEM imaging technique are pivotal in advancing the design and functionality of next-generation skyrmion/antiskyrmion-based spintronic devices.

(Anti)skyrmion↗

DOE OSTI2021

Tunable Microwave Conductance of Nanodomains in Ferroelectric PbZr 0.2 Ti 0.8 O 3 Thin Film

Ferroelectric materials exhibit spontaneous polarization that can be switched by electric field. Beyond traditional applications as nonvolatile capacitive elements, the interplay between polarization and electronic transport in ferroelectric thin films has enabled a path to neuromorphic device applications involving resistive switching. A fundamental challenge, however, is that finite electronic conductivity may introduce considerable power dissipation and perhaps destabilize ferroelectricity itself. In this work, tunable microwave frequency electronic response of domain walls injected into ferroelectric lead zirconate titanate (PbZr 0.2 Ti 0.8 O 3 ) on the level of a single nanodomain is revealed. Tunable microwave response is detected through first-order reversal curve spectroscopy combined with scanning microwave impedance microscopy measurements taken near 3 GHz. Contributions of film interfaces to the measured AC conduction through subtractive milling, where the film exhibited improved conduction properties after removal of surface layers, are investigated. Using statistical analysis and finite element modeling, we inferred that the mechanism of tunable microwave conductance is the variable area of the domain wall in the switching volume. These observations open the possibilities for ferroelectric memristors or volatile resistive switches, localized to several tens of nanometers and operating according to well-defined dynamics under an applied field.

36 MATERIALS SCIENCE↗

DOE OSTI2021

On optical properties and scintillation performance of emerging Ga 2 O 3 : Crystal growth, emission mechanisms and doping strategies

As an emerging ultra-wide bandgap compound semiconductor, Ga 2 O 3 has attracted rapidly growing interest due to its unique physical properties for harsh condition applications. Compared to Ga 2 O 3 ’s electrical-characteristic based uses, such as power electronics, photodetectors and solar cells, a much less explored area for Ga 2 O 3 is its promising optical properties and its related scintillation capabilities. Undoped Ga 2 O 3 is a strong scintillator with excellent scintillation characteristics such as fast decay constants and encouraging light yield which is comparable to that of the classic Bi 4 Ge 3 O 12 (BGO) scintillator. The scintillation capability of Ga 2 O 3 can be precisely tuned via a series of approaches including systematic crystal growth control, post-growth annealing, targeted doping, and optimization of operation temperature. Here we summarize exciting progress of Ga 2 O 3 scintillators which have been pursued over the past few years. Our efforts cover a series of growth techniques of Ga 2 O 3 materials as well as discussion of emission mechanisms. Here we dedicate a targeted portion toward the doping strategies to improve the performance of Ga 2 O 3 . A detailed analysis is provided to compare the impact of different dopants. Through these efforts, we hope to provide useful perspectives to help accelerate the development of high performance Ga 2 O 3 scintillators.

36 MATERIALS SCIENCE↗

DOE OSTI2023

X-ray Pump-Probe Measurements using a Laser-Plasma Accelerator (Final Report)

This project funded one graduate student, Mario Balcazar, to perform experiments on high power laser facilities to study the application of X-rays generated by laser wakefield accelerated electrons for advanced radiography, in particular X-ray phase contrast imaging of hydrodynamic shocks/instabilities. The work made use of the DOE’s LaserNetUS facilities. We performed dynamic phase-contrast X-ray imaging of the shock generated by a 200 ps duration laser pulse (E = 1 J, I = 10 15 Wcm –2 ) with a 30 µm diameter liquid target, with unprecedented spatio-temporal resolution. This includes multi-shock generation within the liquid jet and plasma instability formation. Innovative electron-beam radiography was used to probe the laser-plasma interplay finding evidence of bilateral heating of the water followed by strong electric field generation. These measurements help explain some of the discrepancies between simulation and experiment and pave the way to better plasma diagnostic systems in HED and ICF physics experiments. This work was performed in collaboration with researchers from Michigan, LLNL, LBL and Sandia National Laboratories, Queen’s University Belfast and Imperial College.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Parametric Design Study of a Power Electronics Package for Improving Solder Joint Reliability

The lifetime of a power electronics package is, to a large extent, determined by the reliability of its bonded interfaces under major loading conditions in an operational environment. Based on the application-level requirements of the package, bonded interface material is selected based on the results obtained from accelerated tests such as thermal cycling and power cycling. In addition to evaluating the reliability through accelerated tests, it is important to consider the impact of other component layers on the thermomechanical performance of the interface material, both from a material and geometric perspective. The co-efficient of thermal expansion (CTE) mismatch introduced by the use of different materials within a package and its structural design plays a critical role in determining the interface material reliability. In this paper, we present the results of a parametric modeling study of a power electronics package under thermal cycling in which the materials and geometric design of the different component layers were varied with respect to a baseline design to understand their impact on the reliability of the interface material. We chose the volume-averaged strain energy density per cycle computed at the corner region of the interface material as the metric for the reliability comparisons. Our results indicate that in addition to the CTE mismatch, the stiffness of individual component layers has a major impact on reliability. Among the different baseplates that we studied, aluminum silicon-carbide baseplates offered superior reliability over their copper and aluminum counterparts. We also found that the magnitude of the impact of stiffness variation—amongst the adjacent layers—on the reliability of the solder joint is dependent on the inherent CTE mismatch between the layers.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

Parametric Design Study of a Power Electronics Package

47 OTHER INSTRUMENTATION↗

DOE OSTI2022

X-Ray Scattering and Electron Microscopy Characterization

This research added to the understanding of p-type activation in GaN vertical transistors for power applications by identifying key defects which inhibit p-type activation. We also developed an approach to eliminate such defects with the appropriate annealing treatments. Additionally we addressed the limitations of GaN substrates used in the production of these devices and exploited the non-uniform distribution of substrate defects to better understand the relationship between device performance and defect density. Through this work, we also established how irregularities – step bunching and haze formation – during epitaxial growth are related to defects in the underlying substrates. Our charter was to work with several other teams to determine connections between defects and performance of GaN-based vertical transistors and have several presentations and publications as well as manuscripts and follow-up collaborations. The research at UCLA supported two full graduate students, one of whom is graduating this summer as well as three undergraduate students.

36 MATERIALS SCIENCE↗