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Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.
A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor.
According to an exemplary implementation, a transistor includes drain finger electrodes interdigitated with source finger electrodes. The transistor also includes a current conduction path in a semiconductor substrate between the drain finger electrodes and the source finger electrodes. At least one of the drain finger electrodes has a drain finger electrode end and a drain finger electrode main body, where the drain finger electrode main body is non-coplaner with at least a portion of the drain finger electrode end. The transistor may also include a dielectric material situated between at least a portion of the drain finger electrode end and the semiconductor substrate. The dielectric material can be an increasing thickness dielectric material. The dielectric material can thus elevate the drain finger electrode end over the semiconductor substrate. Further, the drain finger electrode end can have an increased radius of curvature.
Inspired by the in-memory computing architectures of biological systems, neuromorphic computing using crossbar arrays of artificial synapses based on non-volatile memory (NVM) devices with variable conductances has emerged as a new paradigm to enable massively parallel and ultra-low power computing hardware for data centric applications. Although inference has been demonstrated successfully using crossbars based on a variety of NMV technologies, efficient learning and scaling to large arrays (>10 6 elements) remains a challenge due to the synaptic elements' non-ideal electrical characteristics which degrades ANN accuracy. A further challenge is that in the conductive state memristors draw large currents >μA resulting in significant voltage drops in the interconnect wires and increased probability of failure in scaled arrays. We suggest the organic polymer redox transistor (RT) is an alternate approach that could solve many of these challenges, enabling both inference and parallel outer product updates, as recently demonstrated by Fuller et al. An RT consists of redox-active channel and gate electrodes in contact with a liquid or solid electrolyte. lon insertion through the electrolyte controls the channel electronic conductivity, while electron transfer through an external circuit maintains overall charge neutrality. Unlike a rechargeable battery, in the RT the voltage built-up across the electrolyte is kept to a minimum (typically <100 mV) by using the same material for the gate and channel. Elimination of the voltage offset simplifies integration of the RT into programmable arrays by enabling the use of various selectors. RTs based on inorganic and organic materials have been recently demonstrated with conductance tuning occurring at potentials of just a few mV and hundreds to thousands of linearly and symmetrically programmable conductance states, enabling near ideal accuracy in neural network simulations. Introduced in the 1980's, redox transistors with metallic gate electrodes and organic channel materials, also known as organic electrochemical transistors (OECTs), have been explored for a variety of applications such as chem- and bio-sensing, neural interfaces, and low cost printed circuits. A typical channel material for OECTs is the conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS). PEDOT is a p-type semiconducting polymer with mobile positively charged polarons that hop chain-to-chain.
A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.
Abstract Organic electrochemical transistors (OECTs) are devices with broad potential in bioelectronic sensing, circuits, and neuromorphic hardware. Their unique properties arise from the use of organic mixed ionic/electronic conductors (OMIECs) as the active channel. Typical OMIECs are linear polymers, where defined and controlled microstructure/morphology, and reliable characterization of transport and charging can be elusive. Semiconducting two‐dimensional polymers (2DPs) present a new avenue in OMIEC materials development, enabling electronic transport along with precise control of well‐defined channels ideal for ion transport/intercalation. To this end, a recently reported 2DP, TIIP, is synthesized and patterned at 10 µm resolution as the channel of a transistor. The TIIP films demonstrate textured microstructure and show semiconducting properties with accessible oxidation states. Operating in an aqueous electrolyte, the 2DP‐OECT exhibits a device‐scale hole mobility of 0.05 cm 2 V –1 s –1 and a µ C * figure of merit of 1.75 F cm –1 V –1 s –1 . 2DP OMIECs thus offer new synthetic degrees of freedom to control OECT performance and may enable additional opportunities such as ion selectivity or improved stability through reduced morphological modulation during device operation.
We have investigated the film morphology and the field effect mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) thin films which were formed by spin coating on the SiO{sub 2} substrate with solution-processed graphene electrodes. The domain size and the density of aggregates in the C8-BTBT film showed the same dependence on the spinning speed. These competitive two factors (domain size and density of aggregates) give an optimum spinning speed, at which the field effect mobility of C8-BTBT transistor showed a maximum (2.6 cm{sup 2}/V s). This result indicates the importance of spinning speed in the fabrication of solution processed organic thin film transistors by spin coating.
In this paper, experimental evidence of multiple synchronization phenomena in a large (n = 30) ring of chaotic oscillators is presented. Each node consists of an elementary circuit, generating spikes of irregular amplitude and comprising one bipolar junction transistor, one capacitor, two inductors, and one biasing resistor. The nodes are mutually coupled to their neighbours via additional variable resistors. As coupling resistance is decreased, phase synchronization followed by complete synchronization is observed, and onset of synchronization is associated with partial synchronization, i.e., emergence of communities (clusters). While component tolerances affect community structure, the general synchronization properties are maintained across three prototypes and in numerical simulations. The clusters are destroyed by adding long distance connections with distant notes, but are otherwise relatively stable with respect to structural connectivity changes. The study provides evidence that several fundamental synchronization phenomena can be reliably observed in a network of elementary single-transistor oscillators, demonstrating their generative potential and opening way to potential applications of this undemanding setup in experimental modelling of the relationship between network structure, synchronization, and dynamical properties.
Supercoupling effect prevents the simultaneous formation of inversion and accumulation channels at the two interfaces of ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Our work highlights that short-channel effects enhance supercoupling and turn it into a two-dimensional mechanism. The lateral influence of source and drain terminals is evidenced with experimental data and examined by 2D numerical simulations which reveal the roles of gate length and drain bias. The critical Si-film thickness, below which supercoupling arises, is significantly increased in short-channel transistors. The impact of back-gate and drain bias, BOX thickness, and quantum effects is documented and practical applications are discussed.
Organic electrochemical transistors (OECTs) feature a polymer channel capable of conducting both ions and electronic charges. The choice of the channel material is critical for OECT performance. Many efforts have focused on improving performance via the chemical tunability of conjugated polymers – through backbone, side chain, and molar mass engineering – leading to useful design principles for accumulation-mode OECT materials. However, tuning the chemical structure of conjugated polymers often requires time-consuming optimization of the synthesis route. Meanwhile, variations in molar mass, dispersity, structural defects, and metal content present challenges when attempting to analyze the detailed effects of structural modifications, as multiple performance-determining factors are often (unintentionally) changed at the same time. Therefore, this study explores blended channel materials obtained by physically mixing glycolated and alkoxylated polymers in different ratios, and compares their OECT performance with the corresponding statistical copolymers. It is shown that mixing two well-performing materials creates blends that enable rational tuning of the transistor properties without compromising on performance. Thus, channels based on blends of alkoxylated and glycolated polymers hold promise for OECT technology with tailored response, as only two materials are needed to achieve any desired side chain ratio, simplifying the optimization of OECT characteristics.
Silver nanowire is a very promising material for fabricating compliant conductors which are essential for stretchable/wearable electronic devices. Screen printing is a cost-effective and scalable technology to fabricate large-area thin film coatings with modest pattern resolution. The biggest challenge to prepare a screen printable silver nanowire ink stems from the low viscosity of silver nanowire dispersions and that the addition of a thickening agent could dramatically increase the inter-nanowire contact resistance in the resulting coating. Herein, we report the synthesis of a water-based silver nanowire ink, which was formulated with low solid contents, high viscosity at 0.1 s -1 shear rate, and appropriate rheological behavior suitable for screen printing. Silver nanowire coating patterns were screen printed with uniform sharp edges, ~50 μm resolution, and electrical conductivity as high as 4.67 × 10 4 S cm -1 . The screen printed silver nanowires were then used to fabricate a composite conductor that retained a conductivity greater than 10,000 S cm -1 under 70% tensile strain. Fully printed and stretchable/wearable thin-film transistor arrays were also fabricated by employing the screen printed composite conductor as the source, drain, and gate, drop cast semiconducting carbon nanotubes as the channel, and a dielectric elastomer. The 10 × 6 thin-film transistor arrays had a fabrication yield of 91.7%, average mobility of 33.8 ± 3.7 cm 2 V -1 s -1 , ON/OFF ratio ~1000, and remained stable during 1,000 cycles of wearing on and peeling off a glass tube with 5 mm diameter.
Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al 0.85 Ga 0.15 N barrier/Al 0.50 Ga 0.50 N channel HEMT with a large positive threshold voltage (V TH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10 −6 Ω cm 2 , average = 1.8 × 10 −4 Ω cm 2 ) are demonstrated in an Al 0.85 Ga 0.15 N barrier/Al 0.68 Ga 0.32 N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.
Printed hybrid electronics (PHE) offer a promising alternative for microelectronics fabrication, addressing some limitations of traditional subtractive manufacturing. Despite the versatility of PHE, particularly in the customization of printing inks, these devices have not yet matched the performance of silicon-based electronics due to challenges in gating mechanisms and operational stability. However, the potential of low-voltage redox-gating to achieve significant carrier modulations in correlated metal oxides remains unexplored in PHE. This study systematically investigates vanadium dioxide (VO 2 ) nanoparticles and redox inks, linking their organization in solution to their morphology, phase state, and properties in solid films and multilayered structures. Using an aerosol jet printer (AJP), a solid-state VO 2 transistor is fabricated, operating at just 0.4 V gating voltage. The printed VO 2 films demonstrate redox-modulated conductivity and consistent transistor behavior. The solid-state redox gating materials also provide long-term stability, with the device maintaining performance over 6000 cycles without degradation. These results highlight the potential of redox gating to enhance the application of functional nanoparticles in printed hybrid microelectronics, especially for flexible, low-voltage, and energy-efficient devices.
In this work a systematic study of biomaterial–based solid–state organic electrochemical transistors (OECTs) is presented in which biogels consisting of gelatin and glycerol, two food–grade materials, are chosen as the model solid electrolyte. Such gels are fundamentally attractive for bioelectronics and wearable applications due to their superior and tunable electrical and mechanical properties, which allow one to fabricate solid–state organic transistors with high ON/OFF ratio and transconductance, possible millisecond–switching speed, and 6–month stability in ambient air. Next, the authors show a good control of the state–retention property of biogel OECTs, demonstrated herein by employing them as artificial synapses with various synaptic functions, such as frequency–based short–term plasticity. This study herein paves the way for the development of biomaterial–based electronics by providing guiding principles for future works that employ biomaterials in OECTs.
Molecules based on benzimidazolone-dioxazine are known as blue/violet pigments and have been commercialized for decades. However, unfavorable solubility limits the application of these structures as building blocks of conjugated polymers despite their low band gaps. Herein, a series of donor–acceptor conjugated polymers containing soluble benzimidazolone-dioxazine structures as the acceptors and oligothiophene as donors are synthesized and investigated. With increasing numbers of thiophene rings, the steric hindrance diminishes and high molecular weight polymers can be achieved, leading to an improved performance in organic field effect transistor devices. The hole mobility of polymers with three to six thiophene units is in the order of 10 -1 cm2 V -1 s -1 . Among all the polymers, polymer P3 with three thiophene units between benzimidazolone-dioxazine structures shows the best hole mobility of 0.4 cm2 V -1 s -1 . Grazing-incidence wide-angle X-ray scattering results reveal that the high mobility of organic field-effect transistors (OFETs) can be accredited by matched donor–acceptor packing in the solid thin films.
To achieve useful, fair, and cost-effective design qualification and type approval testing for PV inverters, two procedures were developed and demonstrated to evaluate the bus link capacitors and power transistor—and where applicable, its module—for long-term reliability. We evaluate the inverter under simulated use conditions with heat run tests to find the highest operating temperatures reached by these components. The procedures are demonstrated in this study with a 4-kVA class string inverter. The maximum temperature of the DC bus link capacitors was determined to be 76.4°C when the ambient temperature was at the inverter's maximum rated temperature of 60°C with derating occurring. On the other hand, the power transistor module's maximum temperature using the heat sink temperature as the index, 92.6°C, occurred in an ambient of 40.8°C when derating was not occurring. The conditions found for upper temperatures exhibited by these components are, respectively, proposed for implementation in the dry heat and thermal cycling tests in the IEC 62093 “Power conversion equipment for photovoltaic systems – Design qualification testing” international standard draft so that the levels applied in the tests are in proportion to those experienced in the field. Finally as a result, fairer evaluation of inverter reliability is realized.
Electronic transistors are fundamental building blocks of large scale integrated circuits in modern advanced electronic equipments, and their sizes have been down-scaled to nanometers. Modeling and simulations in the framework of quantum dynamics have emerged as important tools to study functional characteristics of these nano-devices. This work explores the effects of geometric shapes of semiconductor–insulator interfaces, phonon–electron interactions, and quantum tunneling of three-dimensional (3D) nano-transistors. First, we propose a two-scale energy functional to describe the electron dynamics in a dielectric continuum of device material. Coupled governing equations, i.e., Poisson–Kohn–Sham (PKS) equations, are derived by the variational principle. Additionally, it is found that at a given channel cross section area and gate voltage, the geometry that has the smallest perimeter of the channel cross section offers the largest channel current, which indicates that ultra-thin nanotransistors may not be very efficient in practical applications. Moreover, we introduce a new method to evaluate quantum tunneling effects in nanotransistors without invoking the comparison of classical and quantum predictions. It is found that at a given channel cross section area and gate voltage, the geometry that has the smallest perimeter of the channel cross section has the smallest quantum tunneling ratio, which indicates that geometric defects can lead to higher geometric confinement and larger quantum tunneling effect. Furthermore, although an increase in the phonon–electron interaction strength reduces channel current, it does not have much impact to the quantum tunneling ratio. Finally, advanced numerical techniques, including second order elliptic interface methods, have been applied to ensure computational accuracy and reliability of the present PKS simulation.
Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.