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At least 217 records · Page 12

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NASA NTRS1983

AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon

AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.

Dharmadhikari, V. S.↗

NASA NTRS1984

Application of thin-layer Navier-Stokes equations near maximum lift

The flowfield about a NACA 0012 airfoil at a Mach number of 0.3 and Reynolds number of 1 million is computed through an angle of attack range, up to 18 deg, corresponding to conditions up to and beyond the maximum lift coefficient. Results obtained using the compressible thin-layer Navier-Stokes equations are presented as well as results from the compressible Euler equations with and without a viscous coupling procedure. The applicability of each code is assessed and many thin-layer Navier-Stokes benchmark solutions are obtained which can be used for comparison with other codes intended for use at high angles of attack. Reasonable agreement of the Navier-Stokes code with experiment and the viscous-inviscid interaction code is obtained at moderate angles of attack. An unsteady solution is obtained with the thin-layer Navier-Stokes code at the highest angle of attack considered. The maximum lift coefficient is overpredicted, however, in comparison to experimental data, which is attributed to the presence of a laminar separation bubble near the leading edge not modeled in the computations. Two comparisons with experimental data are also presented at a higher Mach number.

Anderson, W. K.↗

NASA NTRS1986

High-Quality, Thin-Film Germanium Single Crystals

Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.

Outlaw, R. A.↗

NASA NTRS1984

Scattering from Thin Dielectric Disks

A solution was obtained for scattering from thin dielectric disks by approximating the currents induced inside the disk with the currents which would exist inside a dielectric slab of the same thickness, orientation and dielectric properties. This approximation reduces to an electrostatic approximation when the disk thickness, T, is small compared to the wavelength of the incident radiation and the approximation yields a conventional physical optics solution when the dimension, A, characteristic of the geometrical cross section of the disk (e.g., the diameter of a circular disk) is large compared to wavelength. When the ratio A/T is sufficiently large the disk will always be in one or the other of these regimes (T lambda or kA1. Consequently, when A/T is large this solution provides a conventional approximation for the scattered fields which can be applied at all frequencies. As a check on this conclusion, a comparison was made between the theoretical and measured radar cross section of thin dielectric disks. Agreement was found for thin disks with both large and small values of kA.

Levine, D. M.↗

NASA NTRS1983

A thin film strain transducer

A device has been developed for the purpose of measuring longitudinal strain in thin polyethylene films. This paper describes the design, development, calibration, and application of this unique transducer in a variety of low temperature environments. This thin, ring-shaped device has a low effective modulus so as not to interfere with the strain that would naturally occur in a thin film. It has a standard 350 ohm impedance which is compatible with most available bridge balance, amplification, and telemetry instrumentation. This transducer has been successfully used for viscoelastic material characterization experiments in the laboratory, as well as in flight measurements of strain on the surface of scientific balloons during inflation, launch, ascent, and float.

Rand, J. L.↗

NASA NTRS1986

Weld Repair of Thin Aluminum Sheet

Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

Beuyukian, C. S.↗

NASA NTRS1985

Crystalline-silicon reliability lessons for thin-film modules

The reliability of crystalline silicon modules has been brought to a high level with lifetimes approaching 20 years, and excellent industry credibility and user satisfaction. The transition from crystalline modules to thin film modules is comparable to the transition from discrete transistors to integrated circuits. New cell materials and monolithic structures will require new device processing techniques, but the package function and design will evolve to a lesser extent. Although there will be new encapsulants optimized to take advantage of the mechanical flexibility and low temperature processing features of thin films, the reliability and life degradation stresses and mechanisms will remain mostly unchanged. Key reliability technologies in common between crystalline and thin film modules include hot spot heating, galvanic and electrochemical corrosion, hail impact stresses, glass breakage, mechanical fatigue, photothermal degradation of encapsulants, operating temperature, moisture sorption, circuit design strategies, product safety issues, and the process required to achieve a reliable product from a laboratory prototype.

Ross, R. G., Jr.↗

NASA NTRS1985

Relative advantages of thin-layer Navier-Stokes and interactive boundary-layer procedures

Numerical procedures for solving the thin-shear-layer Navier-Stokes equations and for the interaction of solutions to inviscid and boundary-layer equations are described and evaluated. To allow appraisal of the numerical and fluid dynamic abilities of the two schemes, they have been applied to one airfoil as a function of angle of attack at two slightly different Reynolds numbers. The NACA 0012 airfoil has been chosen because it allows comparison with measured lift, drag, and moment and with surface-pressure distributions. Calculations have been performed with algebraic eddy-viscosity formulations, and they include consideration of transition. The results are presented in a form that allows easy appraisal of the accuracy of both procedures and of the relative costs. The interactive procedure is computationally efficient but restrictive relative to the thin-layer Navier-Stokes procedure. The latter procedure does a better job of predicting drag than does the former. In both procedures, the location of transition is crucial for accurate or detailed computations, particularly at high angles of attack. When the upstream influence of pressure field through the shear layer is important, the thin-layer Navier-Stokes procedure has an edge over the interactive procedure.

Mehta, U.↗

NASA NTRS1985

A numerical study of forced lithospheric thinning

Subsolidus lithospheric thinning by mantle plumes may be involved in the creation of swells, hotspots, and rifts. Among the major questions concerning this process are the timescale on which it occurs and the structure of the plumes. The lithosphere is known to have been substantially thinned in 10 Ma or less. Current studies are focused on the lithospheric thinning by time-dependent plumes hypothesized to have large temperature differences across them.

Schubert, G.↗

NASA NTRS1985

Scattering from thin dielectric disks

A solution was obtained for scattering from thin dielectric disks by approximating the currents induced inside the disk with the currents which would exist inside a dielectric slab of the same thickness, orientation and dielectic properties. This approximation reduces to an electrostatic approximation when the disk thickness, T, is small compared to the wavelength of the incident radiation and the approximation yields a conventional physical optics solution when the dimension, A, characteristic of the geometrical cross section of the disk (e.g., the diameter of a circular disk) is large compared to wavelength. When the ratio A/T sufficiently large the disk will always be in one or the other of these regimes, T lambda or kA1. Consequently, when A/T is large this solution provides a conventional approximation for the scattered fields which can be applied at all frequencies. As a check on this conclusion, a comparison was made between the theoretical and measured radar cross section of thin dielectric disks. Agreement was found for thin disks with both large and small values of kA.

Le Vine, D. M.↗

NASA NTRS1985

Potential of thin-film solar cell module technology

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

Shimada, K.↗

NASA NTRS1986

The equilibrium structure of thin magnetic flux tubes. II

The thermal structure of the medium inside thin, vertical magnetic flux tubes embedded in a given external atmosphere is investigated, assuming cylindrical symmetry and a depth-independent plasma beta. The variation with tube radius of the temperature on the tube axis is computed and the temperature on the tube wall is estimated. The temperature variation across the flux tube is found to be due to the depth variation of the intensity and to the density stratification of the atmosphere. Since the temperature difference between the axis and the wall is small in thin flux tubes (of the order of 10 percent), the horizontal temperature gradient may often be neglected and the temperature in a tube of given radius may be described by a single function of depth. Thus, a more detailed numerical treatment of the radiative transfer within thin flux tubes can be substantially simplified by neglecting horizontal temperature differences within the flux tube proper.

Kalkofen, W.↗

NASA NTRS1986

The Electronically Steered Thinned Array Radiometer (ESTAR)

The concept of a thinned array radiometer is described as an alternate to large filled apertures to achieve high resolution imaging from space. The serious limitations of conventional mechanical scanning systems and the practical problems associated with a multiple receiver pushbroom system that utilizes a large antenna are discussed. The thinned array is developed in terms of aperture synthesis techniques used in radio astronomy. Examples of thinned array configurations are presented, and future directions are discussed.

Swift, C. T.↗

NASA NTRS1987

Effect of an oxygen plasma on uncoated thin aluminum reflecting films

Thin aluminum films were considered for use as a reflective surface for solar collectors on orbiting solar dynamic power systems. A matter of concern is the durability of such reflective coatings against oxidative attack by highly reactive neutral atomic oxygen, which is the predominate chemical specie in low Earth orbit. Research to date was aimed at evaluating the protective merit of thin dielectric coatings over the aluminum or other reflective metals. However, an uncoated aluminum reflector may self-protect by virtue of the oxide formed from its exposed surface, which constitutes a physical barrier to further oxidation. This possibility was investigated, and an attempt was made to characterize the effects of atomic oxygen on thin Al films using photomicrographs, scanning electron microscopy, spectrophotometry, Auger analysis, and mass measurements. Data collected in a parallel effort is discussed for its comparative value. The results of the investigation of uncoated aluminum supported the self-protection hypothesis, and importantly, it was found that long term specular reflectance for uncoated aluminum exceeded that of Al and Ag reflectors with dielectric coatings.

Parsons, Roger L.↗

NASA NTRS1987

AC impedance analysis of polypyrrole thin films

The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.

Penner, Reginald M.↗

NASA NTRS1986

A comparison of interactive boundary-layer and thin-layer Navier-Stokes procedures

Mehta, U.↗

NASA NTRS1986

Effects of excitation intensity on the photocurrent response of thin film silicon solar modules

Photocurrent responses of amorphous thin film silicon solar modules at room temperature were studied at different excitation intensities using various monochromatic light sources. Photocurrent imaging techniques have been effectively used to locate rapidly, and non-destructively, failure and defect sites in the multilayer thin film device. Differences observed in the photocurrent response characteristics for two different cells in the same amorphous thin film silicon solar module suggest the possibility of the formation of dissimilarly active devices, even though the module is processed in the same fabrication process. Possible mechanisms are discussed.

Kim, Q.↗

NASA NTRS1988

A review of melt and vapor growth techniques for polydiacetylene thin films for nonlinear optical applications

Methods for the growth of polydiacetylene thin films by melt and vapor growth and their subsequent polymerization are summarized. Films with random orientations were obtained when glass or quartz were used as substrates in the vapor growth process. Oriented polydiacetylene films were fabricated by the vapor deposition of diacetylene monomer onto oriented polydiacetylene on a glass substrate and its subsequent polymerization by UV light. A method for the growth of oriented thin films by a melt-shear growth process as well as a method of film growth by seeded recrstallization from the melt between glass plates, that may be applied to the growth of polydiacetylene films, are described. Moreover, a method is presented for the fabrication of single crystal thin films of polyacetylenes by irradiation of the surface of diacetylene single crystals to a depth between 100 and 2000 angstroms.

Penn, B. G.↗