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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Development of electric discharge circuit damping element which increases in resistance with current and time is described. Damping element is resistor made of tungsten wire which has large resistance-temperature coefficient. Specifications of tungsten resistor and incorporation into circuit are explained.
Study of the solid electrolyte ZnCl2-2NH3 rechargeable silver zinc electrochemical cell by X-ray diffraction analysis of the reaction products led to the conclusion that some water is consumed when the cell is discharged. Replacement of ZnCl2-2NH3 by ZnCl2-4Zn(OH)2 gave cells with high internal resistance and limited capacity. The salt formed by exposing a fibrous membrane saturated with ZnCl2 solution to fumes from ammonium carbonate in a dry desiccator comprised ZnCl2-4Zn(OH)2, ZnCl2,3NH4Cl and a third unidentified component. The temperature coefficient of open circuit EMF was nearly zero over the range from -25 C to 50 C. The internal resistance and polarization increased substantially below -25 C. There is some indication that exposure to 50 C for 29 hours causes some deterioration.
A model calculation of the temperature dependence of the electronic density of states and the electrical conductivity of disordered binary alloys, based on the coherent-potential approximation is made by introducing thermal disorder in the single-band model (Velicky and others). Thermal disorder is found to broaden and smear the static-alloy density of states. The electrical resistivity in weak-scattering alloys always increases with temperature. However, in the strong-scattering case, the temperature coefficient of resistivity can be positive, zero, or negative, depending on the location of the Fermi energy.-
The molecular and atomic mechanisms for the hydrogen-iodine exchange reaction are treated theoretically by means of extensive classical trajectories calculated on a reasonable potential energy surface on which the single adjustable parameter is the iodine-core effective charge. The analysis shows the molecular mechanism to be dynamically forbidden, but gives an over-all rate constant for the atomic mechanism that is in agreement with the experimental values. It is indicated that the formation of a weak H2I complex plays an important dynamical role if the atomic mechanism is limited to reactions with collision complexes involving no more than two hydrogen atoms and two iodine atoms. Excellent agreement with experiment is obtained for the rate constant for the recombination I+I+H2 yields I2+H2 and its negative temperature coefficient.
Data accumulated during 4 years of research and evaluation of ceramic chip capacitors, ceramic carrier mounted active devices, beam-lead transistors, and chip resistors are presented. Life and temperature coefficient test data, and optical and scanning electron microscope photographs of device failures are presented and the failure modes are described. Particular interest is given to discrete component qualification, power burn-in, and procedures for testing and screening discrete components. Burn-in requirements and test data will be given in support of 100 percent burn-in policy on all NASA flight programs.
Charged particle conductivities measured in the very low ionosphere at White Sands Missile Range, New Mexico, and Wallops Island, Virginia, are compared with atmospheric parameters and high frequency radio wave absorption measurements. Charged particle densities are derived from the conductivity data. Between 33 and 58 km, positive conductivity correlated well with neutral atmospheric temperature, with temperature coefficients as large as 4.6%/deg K. Good correlations were also found between HF radio wave absorption and negative conductivity at altitudes as low as 53 km, indicating that the day-to-day absorption variations were principally due to variations in electron loss rate.
Two designs of plastic scintillation counters with an area of 2 sq m scanned in each case by a single photomultiplier of the FEU-49 type are described. The radial dependence of their light collection at the place of the path of the detected particle does not exceed 10% while the half width of the differential distribution of the pulse amplitudes from nonfiltered cosmic radiation at sea level is 90 to 95%, and 65%, the plastic thickness being 5 cm and 10 cm, respectively. The temperature coefficient of the counter is 0.32% per 1 C.
The development of a push-pull frequency-modulated oscillator employing field-effect transistors is described. The advantages of field-effect transistors for use in a frequency-stable oscillator are presented. Linearization of the frequency deviation was accomplished by utilizing the square-law characteristic of an FET used as a modulating amplifier. The push-pull oscillator model produced a linear frequency deviation of more than 10 MHz at a center frequency of approximately 100 MHz. Output power is within 0.6 db of a nominal +8.5 dBm over the desired frequency range, and the modulation bandwidth is dc to 10 MHz. Frequency variation with temperature after compensation with a negative-temperature-coefficient capacitor is within + or - 0.05% from 0 to 60 C.
The characteristics and behavior of p(+), p solar cells were investigated. The p(+), p cells were made by the removal of the n(+) surface layers from n(+), p p(+), BSF cells followed by application of a suitable contact to the resultant p(+), p structures. The open circuit voltage of p(+), p cells was found to increase with increasing 'p' bulk resistivity. The measured open circuit velocity-temperature coefficients were positive and increased with increasing resistivity. An outline of prior limitations in solar cell design is presented, and the removal of these limitations through use of BSF effects is pointed out. The study of BSF effects made feasible production of very thin high efficiency silicon cells as well as high resistivity-high efficiency cells, two desirable types of silicon cells which were previously impossible to make.
The chemical vapor deposition of boron filament is generally considered to be limited by the diffusion of the reactive species to the hot substrate. From concentration gradient considerations and from experimental measurements it is concluded that the product species (HCl) is more likely to be involved in limiting the deposition rate. Comparison of theoretically calculated and experimentally measured deposition rates show that the rate is generally partially limited by diffusion and partially by the surface reaction rate (desorption) of HCl. The relative amounts of surface reaction or diffusion rate impedance were determined as a function of temperature and gas velocity. The temperature coefficient for the desorption of HCl was found to be 52 Kcal/mole.
The reliability of hybrid microcircuits has been enhanced in recent years by the use of organic adhesives as a replacement for solder and eutectics. The epoxies have been the most effective and widely used material for this application. Methods for measuring the electrical and mechanical properties of epoxies are developed. Data are given for selected conductive adhesives at high and low frequencies. The temperature coefficients of resistance of thick film resistors are presented.
The bonding reliability of discrete capacitor chips bonded with solders and conductive epoxies was examined along with the thick film resistor materials consisting of iron oxide phosphate and vanadium oxide phosphates. It was concluded from the bonding reliability studies that none of the wide range of types of solders examined is capable of resisting failure during thermal cycling while the conductive epoxy gives substantially lower failure rates. The thick film resistor studies proved the feasibility of iron oxide phosphate resistor systems although some environmental sensitivity problems remain. One of these resistor compositions has inadvertently proven to be a candidate for thermistor applications because of the excellent control achieved upon the temperature coefficient of resistance. One new and potentially damaging phenomenon observed was the degradation of thick film conductors during the course of thermal cycling.
Gravity gradiometry is recognized to be a very difficult instrumentation problem because extremely small differential acceleration levels have to be measured, 0.1 EU corresponds to an acceleration of 10 to the minus 11th power g at two points 1 meter apart. A feasibility model of a gravity gradiometer is being developed for airborne applications using four modified versions of the proven Model VII accelerometers mounted on a slowly rotating fixture. Gravity gradients are being measured to 1.07 EU in a vertical rotation axis orientation. Equally significant are the outstanding operational characteristics such as fast reaction time, low temperature coefficients and high degree of bias stability over long periods of time. The rotating accelerometer gravity gradiometer approach and its present status is discussed and it is the foundation for the orbital gravity gradiometer analyzed. The performance levels achieved in a 1 g environment of the earth and under relatively high seismic disturbances, lend the orbital gravity gradiometer a high confidence level of success.
Computed statistical averages and standard deviations with respect to the measured cells for each intensity temperature measurement condition are presented. Display averages and standard deviations of the cell characteristics in a two dimensional array format are shown: one dimension representing incoming light intensity, and another, the cell temperature. Programs for calculating the temperature coefficients of the pertinent cell electrical parameters are presented, and postirradiation data are summarized.
The data reported are these measured onboard the NASA Langley chartered Cessna aircraft. Data include ozone, nitrogen oxides, light scattering coefficient, temperature, dewpoint, and aircraft altitude.
Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.
Extremely low noise, high performance, wideband buffer amplifiers and buffered phase comparators were developed. These buffer amplifiers are designed to distribute reference frequencies from 30 KHz to 45 MHz from a hydrogen maser without degrading the hydrogen maser's performance. The buffered phase comparators are designed to intercompare the phase of state of the art hydrogen masers without adding any significant measurement system noise. These devices have a 27 femtosecond phase stability floor and are stable to better than one picosecond for long periods of time. Their temperature coefficient is less than one picosecond per degree C, and they have shown virtually no voltage coefficients.
Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.