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At least 217 records · Page 12

Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO 3 )

Materials with tunable thermal properties enable on-demand control of temperature and heat flow, which is an integral component in the development of solid-state refrigeration, energy scavenging, and thermal circuits. Although gap-based and liquid-based thermal switches that work on the basis of mechanical movements have been an effective approach to control the flow of heat in the devices, their complex mechanisms impose considerable costs in latency, expense, and power consumption. As a consequence, materials that have multiple solid-state phases with distinct thermal properties are appealing for thermal management due to their simplicity, fast switching, and compactness. Thus, an ideal thermal switch should operate near or above room temperature, have a simple trigger mechanism, and offer a quick and large on/off switching ratio. In this study, we experimentally demonstrate that manipulating phonon scattering rates can switch the thermal conductivity of antiferroelectric PbZrO 3 bidirectionally by –10% and +25% upon applying electrical and thermal excitation, respectively. Our approach takes advantage of two separate phase transformations in PbZrO 3 that alter the phonon scattering rate in different manners. In this study, we demonstrate that PbZrO 3 can serve as a fast (<1 second), repeatable, simple trigger, and reliable thermal switch with a net switching ratio of nearly 38% from ~1.20 to ~1.65 W m –1 K –1 .

25 ENERGY STORAGE↗

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

Vanadium dioxide (VO{sub 2}) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator–to–metal transition, the phase transition in VO{sub 2} can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO{sub 2} with erbium ions (Er{sup 3+}) and observe their combined properties. The first excited-state luminescence of Er{sup 3+} lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er{sup 3+} into VO{sub 2} could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO{sub 2} thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO{sub 2} by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ∼800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO{sub 2} thin films. We conclude that Er-implanted VO{sub 2} can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO{sub 2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Domain-wall-mediated polarization switching in ferroelectric AlScN: Strain relief and field-dependent dynamics

While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field (𝐸 𝑐 ) for polarization switching. Unraveling the atomistic switching dynamics is therefore critical for tailoring 𝐸 𝑐 . Here, in this study, we combine density functional theory and machine-learning molecular dynamics to elucidate the polarization switching mechanisms in AlScN over various Sc concentrations and applied electric fields. We find that excessive lattice strain strictly prohibits collective polarization switching, but the preexisting domain walls relieve strain and lead to a distinct switching dynamics—dictating a field-dependent switching mechanism. At low electric fields, switching occurs via gradual domain-wall propagation consistent with the Kolmogorov-Avrami-Ishibashi model. In contrast, high fields stimulate additional nucleation, driving a rapid, homogeneous reversal process described by the simultaneous nonlinear nucleation and growth model. These findings highlight the critical role of domain-wall dynamics and suggest domain engineering as a viable strategy to tailor coercive fields in AlScN and related ferroelectrics.

36 MATERIALS SCIENCE↗

Current Source Gate Drive to Reduce Switching Loss for SiC MOSFETs

With conventional voltage source gate drives (VSG), the switching speed of SiC MOSFETs is difficult to increase due to large internal gate resistance, high Miller voltage, and limited gate voltage rating. This paper analyzes the requirement of current source gate drive (CSG) for SiC MOSFETs and proposes a CSG that can improve the switching speed and reduce switching loss. With the introduction of bi-directional switches, the influence of the large internal gate resistance of the SiC MOSFET can be mitigated, and sufficient gate current can be guaranteed throughout the switching transient. Therefore, the switching time and loss is reduced. The CSG can be controlled to be a VSG during steady state so the current of the gate drive is discontinuous and the stored energy of the inductor can be returned to the power supply to reduce gate drive loss. Double pulse tests are conducted for a SiC MOSFET with both conventional VSG and the proposed CSG. Testing results show that the switching loss of the proposed CSG is less than one third of the conventional VSG at full load condition.

Gui, Handong↗

An Investigation into High Voltage Spiral Generators Utilizing Thyristor Input Switches

High voltage nanosecond pulses are widely used in scientific research, but their wider adoption in industry requires compact, cost effective and easy to use generators to be developed. This paper presents modelling and experimental investigations into one method of producing such pulses – a spiral generator with a solid-state, thyristor-based input switch. It includes how the pulses are formed within the spiral, why a high speed input switch is required, how the geometry of the spiral dictates its output characteristics, and the effects of different loads. Using thyristors, often connected in series to increase the operating voltage of the spiral, enables the spiral generators to have low jitter, high repetition rate, and long lifetime. Modelling of the circuit used a combination of telegraph equations to account for the wave propagation along the spiral and a lumped circuit exchanging charge between the spiral, the input switch, and the load. The model is verified by detailed experimental results with the relative error being < 10% in most cases. Here, the output voltage pulse was often observed to have an initial peak of much lower magnitude than the subsequent peak(s) – which can only be fully explained by considering wave propagation effects. Lower input switch inductance, shorter switching time, larger mean diameter of the spiral, and increasing the width of the copper tape that makes up the spiral can all increase the voltage multiplication efficiency. Though increasing the number of turns that make up the spiral can increase the output voltage, it can also lower the multiplication efficiency. By understanding the effects of different geometries the spiral can be optimized to drive different loads - three applications of such spiral generators are then presented: pulses with 10 kV amplitude and 10 kHz repetition rate for driving DBD plasma, pulses with amplitude of 10 kV and 10 kV/ns rising rate for triggering of advanced solid state switches, and pulses with -50 kV amplitude and 50 ns rising time for triggering high current gas switches through field distortion.1 Index Terms—spiral generator, nanosecond pulses, telegraph equations, series-connected thyristor module, pulse forming process

42 ENGINEERING↗

Field-free switching of perpendicular magnetization in a ferrimagnetic insulator with spin reorientation transition

Writing magnetic bits through spin-orbit torque (SOT) switching is promising for fast and efficient magnetic random-access memory devices. While SOT switching of out-of-plane (OOP) magnetized states requires lateral symmetry breaking, in-plane (IP) magnetized states suffer from low storage density. Here, we demonstrate a field-free switching scheme using a 5-nanometer europium iron garnet film grown with a (110) orientation that shows a spin reorientation transition from OOP to IP above room temperature. This scheme combines the benefits of high-density storage in the OOP states at room temperature and the efficient field-free SOT switching in the IP states at elevated temperatures. While conventional switching of OOP bits faces the dilemma that high OOP anisotropy is required to improve bit stability and low OOP anisotropy is required to lower switching current density, this scheme disentangles this interdependence, allowing for low switching currents to be possible without sacrificing the bit stability, offering opportunities for future memory devices.

Science & Technology - Other Topics↗

An intra-node HPC network architecture with nanosecond-scale photonic switches

We propose a single-stage network architecture for intra-node connectivity that makes use of nanosecond-scale photonic switches. Although buffering at the switch points is of vital importance for complex multi-stage networks, this is not the case for smaller-scale single-stage networks where the end nodes are located only one hop apart. By limiting the buffering to the end points, the proposed architecture manages to minimize the required electro-optic and opto-electronic conversions, leading in this way to both low end-to-end latency and better energy efficiency. Combining these advantages with nanosecond-scale switching times can allow for high-throughput operation even for frequent switch reconfigurations. The performance of the proposed architecture is evaluated via discrete-event simulations for a wide range of synthetic-traffic cases. The simulation results show that high-throughput operation of ≥90% can be achieved even for small message sizes, i.e., 32 KB for all-to-all communication and 2 KB for uniform random traffic, at a data rate of 400 Gb/s and a switch reconfiguration time of ≤72 ns. Moreover, if 100-ns reconfiguration times are achievable as opposed to 150-ns, then for the all-to-all traffic case a 16% and 28% reduction in completion time can be achieved for message sizes of 8 KB and 1 KB, respectively. In a forthcoming era of optically interfaced processors and accelerators, nanosecond-scale photonic switches appear as a highly promising solution for keeping up with the intra-node bandwidth scaling due to their high-bandwidth, low-latency and fast-switching capabilities.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Push—pull microring-assisted space-and-wavelength selective switch

We introduce a novel design of a space-and-wavelength selective switch based on microring-assisted Mach–Zehnder interferometers. Multiple pairs of overcoupled microring resonators are incorporated as efficient and narrowband phase shifters and are driven in push–pull scheme. We design and demonstrate a 2 × <#comment/> 2 × <#comment/> 2 λ <#comment/> elementary switch block with full spatial and spectral switching capabilities. The switching device’s cross talk suppression and extinction ratio both exceed 21 dB. We measure over 75 GHz optical bandwidth per channel and less than 1.5 dB power penalty at 10 − <#comment/> 9 BER when two 32 Gbps on–off keying signals are loaded simultaneously. This new class of switching elements can further enable compact and high-performance space-and-wavelength selective switch fabrics without the need for wavelength (de)multiplexers or parallel switching planes.

Huang, Yishen (ORCID:0000000278710462)↗

Fielding and analyzing performance of a prototype high voltage output gas switch for Saturn

Timing spread between the thirty-six Saturn modules affects peak electrical power delivered to the Bremsstrahlung diode and can affect vacuum power flow and impedance behavior of the load. To reduce the module spread, a new megavolt gas-insulated closing switch was developed employing design techniques developed for the Z-machine laser triggered switches while retaining Saturn’s simpler electrical triggering. Two modules were temporarily outfitted with the new switches and used separately into local resistive loads (instead of the usual Saturn electron beam load). A reliable operating point and switch time jitter at that point were the goals of the experiments. The target switch reliability is less than one pre-fire in one thousand switch-shots, and a timing standard deviation of 4 nanoseconds. The switches were able to meet both requirements but the number of tests at the chosen point are limited.

43 PARTICLE ACCELERATORS↗

Feasibility study of an integrated optic switching center

The design of a high data rate switching center for a satellite tracking station is discussed. The feasibility of a switching network using an integrated switching matrix is assessed. The preferred integrated optical switching scheme was found to be an electro-optic Bragg diffraction switch. To ascertain the advantages of the integrated optics switching center, its properties are compared to those of opto-electronic and to electronics switching networks.

Source record↗

Electrical switching in cadmium boracite single crystals

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Takahashi, T.↗

Spacecraft in switch matrix for wide band service applicatons in 30/20 GHz communications satellite systems

Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.

Cory, B. J.↗

Development of a microwave 20 x 20 switch matrix for 30/20 GHz SS-TDMA application

The design and fabrication of a 3-8 GHz, 20 x 20 Satellite Switched-Time Division Multiple Access IF switch matrix applicable to a 30/20 GHz communications satellite are described. An assessment of switch architecture in 1980 concluded that the GaAs FET-based coupled crossbar switch matrix, incorporating high speed CMOS LSI logic for switch crosspoint addressing, would be the optimum technology available for communications satellite switching by 1982. This assessment was based on such factors as switching speed, bandwidth, off-state isolation, and reliability, over a 10-year mission life. A proof-of-concept model's construction and testing are presented.

Cory, B. J.↗

20 x 20 IF switch matrix for SS-TDMA systems

Satellite-switched TDMA, an effective means for the increasing of communication satellite channel capacity and the improvement of system flexibility, requires that the spacecraft carry an IF switch matrix in order to provide interconnectivity among multiple beam antennas. Attention is presently given to the development of a 20 x 20 IF switch matrix for the NASA 30/20 GHz communications satellite which will provide a 2.5 GHz bandwidth at C-band frequencies with a switching speed of 10 nsec. Switch matrix architecture, switching device characteristic, and distribution control unit design practices are discussed, together with switch matrix reliability.

Ho, P. T.↗

Gas adsorption/absorption heat switch, phase 1

The service life and/or reliability of far-infrared sensors on surveillance satellites is presently limited by the cryocooler. The life and/or reliability, however, can be extended by using redundant cryocoolers. To reduce parasitic heat leak, each stage of the inactive redundant cryocooler must be thermally isolated from the optical system, while each stage of the active cryocooler must be thermally connected to the system. The thermal break or the thermal contact can be controlled by heat switches. Among different physical mechanisms for heat switching, mechanically activated heat switches tend to have low reliability and, furthermore, require a large contact force. Magnetoresistive heat switches are, except at very low temperatures, of very low efficiency. Heat switches operated by the heat pipe principle usually require a long response time. A sealed gas gap heat switch operated by an adsorption pump has no mechanical motion and should provide the reliability and long lifetime required in long-term space missions. Another potential application of a heat switch is the thermal isolation of the optical plane during decontamination.

Chan, C. K.↗

Self-actuating heat switches for redundant refrigeration systems

A dual refrigeration system for cooling a sink device is described, which automatically thermally couples the cold refrigerator to the sink device while thermally isolating the warm refrigerator from the sink device. The system includes two gas gap heat switches that each thermally couples one of the refrigerators to the sink device, and a pair of sorption pumps that are coupled through tubes to the heat switches. When the first refrigerator is operated and therefore cold, the first pump which is thermally coupled to it is also cooled and adsorbs gas to withdraw it from the second heat switch, to thereby thermally isolate the sink device from the warm second refrigerator. With the second refrigerator being warm, the second pump is also warm and desorbs gas, so the gas lies in the first switch, to close that switch and therefore thermally couple the cold first refrigerator to the sink device. Thus, the heat switches are automatically switched according to the temperature of the corresponding refrigerator.

Chung K Chan↗

Characterization of two MMIC GaAs switch matrices at microwave frequencies

Monolithic GaAs microwave switch matrices for use in satellite switched, time division multiple access communication systems were developed. Two monolithic GaAs MESFET switch matrices were fabricated; one for switching operation at intermediate frequencies, 3.5 to 6.0 GHz, and another for switching at radio frequencies, 17.7 to 20.2 GHz. Key switch parameters were measured for both switch matrices.

Fujikawa, Gene↗