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Results for “Solar cell characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

High temperature solid oxide regenerative fuel cell for solar photovoltaic energy storage

A hydrogen-oxygen regenerative fuel cell energy storage system based on high temperature solid oxide fuel cell technology is discussed which has application to darkside energy storage for solar photovoltaics. The forward and reverse operating cycles are described, and heat flow, mass, and energy balance data are presented to characterize the system's performance and the variation of performance with changing reactant storage pressure. The present system weighs less than nickel hydrogen battery systems after 0.7 darkside operation, and it maintains a specific weight advantage over radioisotope generators for discharge periods up to 72 hours.

Bents, David J.↗
NASA NTRS1989

Encapsulated diffusion of sulphur into InP

This talk outlines a simple process for the fabrication of n(+)-p solar cells in indium phosphide. Large area cells (greater than 0.25 sq cm) have been made by this process, with a photovoltaic conversion efficiency of 15.21 percent under AM0 conditions of illumination. An ideality factor of 1.1 and a saturation current density of 8 x 10 to the minus 15th power A/sq cm have been observed for these cells. The technique for cell fabrication involves the diffusion of sulfur into InP by an open tube process, and gives highly reproducible results from run to run. A vacuum-deposited layer of gallium sulphide (Ga2S3) was used as the source for sulfur diffusion, with a chemically vapor deposited SiO2 cap layer to prevent decomposition of the InP surface during heat treatment. Diffusions were carried out in a flowing nitrogen ambient at 585 to 708 C, and characterized by their surface carrier concentration and the diffusion constant. The diffusion profile for sulfur in InP is estimated to be of the complementary error function type. The activation energy of the diffusion was estimated to be 1.94 eV. The technique described here is ideally suited for the fabrication of shallow n(+)-p junctions in InP, and has been used for space-borne solar cells.

Parat, K. K.↗
NASA NTRS1977

Energy requirement for the production of silicon solar arrays

The results of a study to investigate the feasibility of manufacturing photovoltaic solar array modules by the use of energy obtained from similar or identical photovoltaic sources are presented. The primary objective of this investigation was the characterization of the energy requirements of current and developing technologies which comprise the photovoltaic field. For cross-checking the energies of prevailing technologies data were also used and the wide-range assessment of alternative technologies included different refinement methods, various ways of producing light sheets, semicrystalline cells, etc. Energy data are utilized to model the behavior of a future solar breeder plant under various operational conditions.

Lindmayer, J.↗
NASA NTRS1991

Wide acceptance angle, high concentration ratio, optical collector

A cassegrain optical system provides improved collection of off-axis light yet is still characterized by a high concentration ratio. The optical system includes a primary mirror for collecting incoming light and reflecting the light to a secondary mirror which, in turn, reflects the light to a solar cell or other radiation collection device. The primary mirror reflects incoming on-axis light onto an annular section of the secondary mirror and results in the reflection of a substantial amount of incoming off-axis light onto the remainder of the secondary mirror. Thus light which would otherwise be lost to the system will be captured by the collector. Furthermore, the off-axis sections of the secondary mirror may be of a different geometrical shape than the on-axis annular section so as to optimize the amount of off-axis light collected.

Kruer, Mark A.↗
NASA NTRS2007

Spray CVD for Making Solar-Cell Absorber Layers

Spray chemical vapor deposition (spray CVD) processes of a special type have been investigated for use in making CuInS2 absorber layers of thin-film solar photovoltaic cells from either of two subclasses of precursor compounds: [(PBu3) 2Cu(SEt)2In(SEt)2] or [(PPh3)2Cu(SEt)2 In(SEt)2]. The CuInS2 films produced in the experiments have been characterized by x-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, and four-point-probe electrical tests.

Banger, Kulbinder K.↗
NASA NTRS1978

Block 4 solar cell module design and test specification for intermediate load center applications

Requirements for performance of terrestrial solar cell modules intended for use in various test applications are established. During the 1979-80 time period, such applications are expected to be in the 20 to 500 kilowatt size range. A series of characterization and qualification tests necessary to certify the module design for production, and the necessary performance test for acceptance of modules are specified.

Source record↗
NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗
NASA NTRS1989

Estimated performance and future potential of solar dynamic and photovoltaic power systems for selected LEO and HEO missions

Solar photovoltaic and thermal dynamic power systems for application to selected low-earth-orbit (LEO) and high-earth-orbit (HEO) missions are characterized in the regime 7 to 35 kWe. Input parameters to the characterization are varied to correspond to anticipated introduction of improved or new technologies. A comparative assessment is made of the two power system types for emerging technologies in cells and arrays, energy storage, optical surfaces, heat engines, thermal energy storage and thermal management. The assessment is made to common ground rules and assumptions. The four missions (Space Station, sun-synchronous, Van Allen belt, and GEO) are representative of the anticipated range of multikilowatt earth-orbit missions. The results give the expected performance, mass and drag of multikilowatt earth-orbiting solar power systems and show how the overall system figure of merit will improve as new component technologies are incorporated.

Bents, David J.↗
NASA NTRS1977

Materials and techniques for spacecraft static charge control

An overview of the design, development, fabrication, and testing of transparent conductive coatings and conductive lattices deposited or formed on high resistivity spacecraft dielectric materials to obtain control static charge buildup on spacecraft external surfaces is presented. Fabrication techniques for the deposition of indium/tin oxide coatings and copper grid networks on Kapton and FEP Teflon films and special frit coatings for OSR and solar cell cover glasses are discussed. The techniques include sputtering, photoetching, silkscreening, and mechanical processes. A facility designed and built to simulate the electron plasma at geosynchronous altitudes is described along with test procedures. The results of material characterizations as well as electron irradiation aging effects in this facility for spacecraft polymers treated to control static charge are presented. The data presents results for electron beam energies up to 30 kV and electron current densities of 30 nA/cm squared. Parameters measured include secondary emission, surface leakage, and through the sample currents as a function of primary beam energy and voltage.

Amore, L. J.↗
NASA NTRS1984

An overview of medical-biological radiation hazards in earth orbits

The radiation exposure of crew members on space missions in LEO and GEO is evaluated in a general review. The radiation environment is characterized, taking the trapped radiation belts, solar flares, Galactic and solar cosmic rays, and secondary radiation into account and emphasizing the increased dosages produced by transient phenomena such as solar flares. The biological effects of space radiation in the individual cells, on the body as a whole, and on critical organs are summarized, and the exposure limits and shielding specifications (for spacecraft and for EVA suits) currently used by US mission planners are reviewed. For GEO, 4-g/sq cm Al-equivalent shielding is considered adequate under normal conditions, making EVA in this volatile environment questionable; for anomalously large solar flares, emergency shelter within 10-g/sq cm walls or the capability to retreat to a lower orbit is necessary.

Stauber, M. C.↗
NASA NTRS1985

High-efficiency AlGaAs-GaAs Cassegrainian concentrator cells

AlGaAs-GaAs heteroface space concentrator solar cells have been fabricated by metalorganic chemical vapor deposition. AMO efficiencies as high as 21.1% have been observed both for p-n and np structures under concentration (90 to 100X) at 25 C. Both cell structures are characterized by high quantum efficiencies and their performances are close to those predicted by a realistic computer model. In agreement with the computer model, the n-p cell exhibits a higher short-circuit current density.

Werthen, J. G.↗
NASA NTRS2003

Synthesis and Characterization of Chalcopyrite (CuInS2 and CuhInSe2) Colloidal Nanoparticles for Optoelectronic Applications via Low-Temperature Pyrolysis of Single-Source Precursors

Nanocrystalline (or quantum dot) materials hold potential as components of next-generation photovoltaic (PV) devices. The inclusion of quantum dots in PV devices has been proposed as a means to improve the efficiency of photon conversion (quantum dot solar cell), enable low-cost deposition of thin-films, provide sites for exciton dissociation, and pathways for electron transport. Quantum dots are also expected to be more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, a requirement for use in space solar ~sells. Chalcopyrite nanocrystals can be produced by low-temperature thermal decomposition of single-source precursors such as (PR3)2CuIn(ER')4 (R = Ph, R' = Et, E = S; R = R' = Ph, E = Se). Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of material with the correct stoichiometry as a nanocrystalline powder or a thin film, often at significantly lower temperatures than those typically employed for thin-film deposition by multi-source evaporation techniques, typically less than 500 C. We show that CuInSz and CuInSe2 nanocrystals can be synthesized from the precursors at temperatures as low as 250 C. The nanocrystals are characterized by optical spectroscopy, X-ray diffraction, and electron microscopy.

Castro, S. L.↗
NASA NTRS1979

Materials and techniques for spacecraft static charge control 2

Results of exploratory development on the design, fabrication and testing of transparent conductive coatings, conductive bulk materials and grounding techniques for application to high resistivity spacecraft dielectric materials to obtain control of static charge buildup are presented. Deposition techniques for application of indium oxide, indium/tin oxide and other metal oxide films on Kapton, FEP Teflon, OSR and solar cell coverglasses discussed include RF and Magnetron sputtering and vapor deposition. Development, fabrication and testing of conductive glass tiles for OSR and solar cell coverglass applications is discussed. Several grounding techniques for rapid charge dissipation from the conductively coated polymer and glass dielectrics which were developed and tested in thermal cycled and electron plasma environments are described. The optical and electrical characterization and aging effects of these coatings, bulk materials and grounding techniques are reviewed as they apply to the performance of their design functions in a geosynchronous orbit environment.

Schmidt, R. E.↗
NASA NTRS2019

Dust Abrasion Damage on Martian Solar Arrays: Experimental Investigation and Opportunity Rover Performance Analysis

Here we investigate the effects of erosion and weathering that occur on III-V cover-glass interconnected cells (CICs) after exposure to Mars dust storm conditions. The durability of these materials in a Martian environment is not well characterized so we perform analogous experimentation. To replicate the dust impingement, test coupons were placed in an enclosure and sandblasted with Mars dust simulant. We show the J-V response dependency on both incident angle and exposure times. We find that the simulated Martian dust storm often results in damage to the anti-reflective coating and subsequent reduced short circuit current. Reduction in the open circuit voltage is observed, likely caused by structural damage to the crystal lattice after CIC fracture. We employ data-driven modeling to determine a performance degradation rate that is consistent with zero within uncertainty. We also quantify the soiling contribution and power degradation of the photovoltaic cells on Mars through analysis of 4.95 Martian years of report-out power conditions from the Opportunity rover. We find that atmospheric dust suspended due to a weather event does not result in instantaneous settled dust on the PV cells. We calculate via autocorrelation function that the dust settling rate is approximately 21 Sols from atmospheric dust suspension. The findings presented here deliver a realistic approximation for the insolation values and subsequent PV power expected over time on the Martian surface thus informing future dust abatement systems.

McMillon-Brown, Lyndsey↗
NASA NTRS2019

Dust Abrasion Damage on Martian Solar Arrays: Experimental Investigation and Opportunity Rover Performance Analysis

Here we investigate the effects of erosion and weathering that occur on III-V cover-glass interconnected cells (CICs) after exposure to Mars dust storm conditions. The durability of these materials in a Martian environment is not well characterized so we perform analogous experimentation. To replicate the dust impingement, test coupons were placed in an enclosure and sandblasted with Mars dust simulant. We show the J-V response dependency on both incident angle and exposure times. We find that the simulated Martian dust storm often results in damage to the anti-reflective coating and subsequent reduced short circuit current. Reduction in the open circuit voltage is observed, likely caused by structural damage to the crystal lattice after CIC fracture. We employ data-driven modeling to determine a performance degradation rate that is consistent with zero within uncertainty. We also quantify the soiling contribution and power degradation of the photovoltaic cells on Mars through analysis of 4.95 Martian years of report-out power conditions from the Opportunity rover. We find that atmospheric dust suspended due to a weather event does not result in instantaneous settled dust on the PV cells. We calculate via autocorrelation function that the dust settling rate is approximately 21 Sols from atmospheric dust suspension. The findings presented here deliver a realistic approximation for the insolation values and subsequent PV power expected over time on the Martian surface thus informing future dust abatement systems.

McMillon-Brown, Lyndsey↗
NASA NTRS1973

The drift field model applied to the lithium-containing silicon solar cell

The drift field model used by Wolf to calculate the short-circuit current was extended to permit calculations of the open-circuit voltage and the maximum power under conditions of illumination of either tungsten (2800 C) source or AMO sunlight. Voltages were calculated using an expression for the drift field diode saturation current derived here. The model, applied to the oxygen rich (C-13 group) lithium solar cells, was used to calculate the pre-and post-electron bombardment trends for lithium gradients in the range of 10 to the 18th power to 10 to the 19th power Li/cm to the 4th power. Published experimental data characterizing these cells were used to tailor the model. The calculated trends are in reasonable agreement with the empirical data of Faith. Diffusion length degradation and carrier removal effects were sufficient to predict the cell performance up to 3 x 10 to the 14th power e/sq cm. Beyond this fluence it was necessary to include drift field removal effects.

Godlewski, M. P.↗
NASA NTRS1980

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced.

Woo, D. S.↗
NASA NTRS1984

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Spitzer, M. B.↗