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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Nucleation and growth of CrSi2 on Si(111)

The nucleation and growth of CrSi2 on Si(111) by MBE and solid-phase epitaxy (SPE), was investigated using SEM and TEM observations of 2-mm-thick layers grown under a variety of conditions, including the use of a CoSi2 buffer. During growth, the wafers were monitored in situ using reflection high-energy electron diffraction. Island growth was observed, with islands found to nucleate with three epitaxial orientations. The morphology of CrSi2 islands was found to be affected by the degree and direction of substrate misorientation, the growth technique, and the use of CoSi2 buffer. However, the reconstruction of the Si surface does not appear to be an important factor in controlling SPE growth.

Fathauer, R. W.↗
NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗
NASA NTRS1988

Optical emission diagnostics of electron cyclotron resonance and glow discharge plasmas for a-Si:H and a-SiC:H film depositions

It is demonstrated that the steady-state and kinetic characteristics of ECR (electron cyclotron resonance) and RF glow discharge plasmas can be readily monitored by OES (optical emission spectroscopy) in real time during a-Si:H and a-SiC:H film depositions using an OMA detection system. The ECR and RF glow discharge plasmas used for a-Si:H and a-SiC:H film depositions were studied by monitoring the emission of SiH(asterisk), H(asterisk), H(asterisk)2, and CH(asterisk) excited states. The OES of the ECR plasma shows a strong emission at 434 nm from H(asterisk), which is not detectable in the glow discharge plasma. Steady-state OES studies have established preliminary correlations between SiH(asterisk) and CH(asterisk) emission intensities and the film deposition rate. Transient OES spectra of SiH4 and CH4 plasmas have shown different kinetics in SiH(asterisk) and CH(asterisk) emission intensities. Transient studies of the SiH(asterisk) emission intensity have indicated that additional mechanisms for producing the SiH(asterisk) species become evident in hydrogen-diluted silane plasmas.

Yang, C. L.↗
NASA NTRS1990

The Space Telescope SI C&DH system

The Hubble Space Telescope Scientific Instrument Control and Data Handling Subsystem (SI C&DH) is designed to interface with five scientific instruments of the Space Telescope to provide ground and autonomous control and collect health and status information using the Standard Telemetry and Command Components (STACC) multiplex data bus. It also formats high throughput science data into packets. The packetized data is interleaved and Reed-Solomon encoded for error correction and Pseudo Random encoded. An inner convolutional coding with the outer Reed-Solomon coding provides excellent error correction capability. The subsystem is designed with the capacity for orbital replacement in order to meet a mission life of fifteen years. The spacecraft computer and the SI C&DH computer coordinate the activities of the spacecraft and the scientific instruments to achieve the mission objectives.

Gadwal, Govind R.↗
NASA NTRS1989

Electron cyclotron resonance deposition and plasma diagnostics of a-Si:H and a-C:H films

Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films deposited by electron cyclotron resonance (ECR) microwave plasma-enhanced chemical vapor deposition are discussed. It is shown that the ECR microwave plasma deposition technique can produce a-Si:H films with material qualities similar to and with a deposition rate one order of magnitude higher than for films deposited by radio-frequency glow discharge. The ECR-deposited a-C:H films are characterized by fluorescence, IR, and Raman spectroscopy. In situ optical emission spectroscopy plasma diagnostics indicates that ECR plasmas have a strong emission at 434 nm, which indicates a higher chemical reactivity than radio-frequency glow discharge plasmas. The radio frequency bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR-deposited a-C:H films.

Shing, Y. H.↗
NASA NTRS1990

Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

Lao, Pudong↗
NASA NTRS1991

Performance, size, mass, and cost estimates for projected 1kW EOL Si, InP, and GaAs arrays

One method of evaluating the potential of emerging solar cell and array technologies is to compare their projected capabilities in space flight applications to those of established Si solar cells and arrays. Such an application-oriented comparison provides an integrated view of the elemental comparisons of efficiency, radiation resistance, temperature sensitivity, size, mass, and cost in combination. In addition, the assumptions necessary to make the comparisons provide insights helpful toward determining necessary areas of development or evaluation. Finally, as developments and evaluations progress, the results can be used in more precisely defining the overall potential of the new technologies in comparison to existing technologies. The projected capabilities of Si, InP, and GaAs cells and arrays are compared.

Slifer, Luther W., Jr.↗
NASA NTRS1991

Bond-orientational order in liquid Si

Bond-orientational order in liquid Si via Monte Carlo simulation in conjuncation with empirical two- and three-body potentials of the form proposed by Stillinger and Weber are studied. Bond-orientational order (BOO) is described in terms of combinations of spherical harmonic functions. Liquid Si is found to have pronounced short-range BOO corresponding to l = 3, as expected for a structure with local tetrahedral order. No long-range BOO is found either in the equilibrium or the supercooled liquid. When the three-body potential is artificially removed, the tetrahedral bond-orientation order disappears and the liquid assumes a close-packed structure.

Wang, Z. Q.↗
NASA NTRS1991

Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

Kim, Kun HO↗
NASA NTRS1991

Fabrication of nanometer single crystal metallic CoSi2 structures on Si

Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

Nieh, Kai-Wei↗
NASA NTRS1991

Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

Shing, Y. H.↗
NASA NTRS1993

Hot Deformation Of Si(3)N(4) Doped With Sc(2)O(3)

Report describes preparation, microstructural properties, and high-temperature deformation behavior of Si(3)N(4) doped with Sc(2)O(3). Powders of Si(3)N(4) with small additions of Sc(2)O(3) sintered under nitrogen overpressures to full density; expensive hot pressing or hot isostatic pressing not necessary to attain full density. Test of bars indicate high strengths at high temperatures and excellent time-dependent strength properties. Useful for fabrication of hot-section components of automotive gas-turbine engines.

Cheong, Deock-Soo↗
NASA NTRS1993

Development of Si(1-x)Ge(x) technology for microwave sensing applications

The progress for the first year of the work done under the Director's Discretionary Fund (DDF) research project entitled, 'Development of Si(1-x)Ge(x) Technology for Microwave Sensing Applications.' This project includes basic material characterization studies of silicon-germanium (SiGe), device processing on both silicon (Si) and SiGe substrates, and microwave characterization of transmission lines on silicon substrates. The material characterization studies consisted of ellipsometric and magneto-transport measurements and theoretical calculations of the SiGe band-structure. The device fabrication efforts consisted of establishing SiGe device processing capabilities in the Lewis cleanroom. The characterization of microwave transmission lines included studying the losses of various coplanar transmission lines and the development of transitions on silicon. Each part of the project is discussed individually and the findings for each part are presented. Future directions are also discussed.

Mena, Rafael A.↗
NASA NTRS1992

Results from a Si(Li) gamma ray detector stack for future Mars missions

We present Monte Carlo analysis and experimental data from a novel lithium-drifted silicon detector stack for gamma ray spectroscopy instrumentation in future Mars surface landers and other planetary missions. The Monte Carlo analysis shows full energy photopeaks even in the range of about 100 keV to 2 MeV where, in Si, Compton scattering dominates the absorption processes. Laboratory data is shown for an experimental detector stack of four planar Si(Li) devices, each 5 mm thick with an active area 2 cm in diameter. All the experimental data were collected with maximum temperature of the stack at 175 K. Background reduction is achieved by using the detector of the stack closest to the source in anticoincidence. We present a comparison of experimental data from the stack with the Monte Carlo model for Cs-137 (662 keV). Agreement is shown to be good, with a full energy photopeak clearly seen (FWHM about 10 keV). Experimental stack data is also shown for multiple peaks at 511 keV (Na-22) and 662 keV (Cs-137). The peaks are clearly resolved (FWHM 10 keV), and are compared with the results obtained using a 8 percent resolution, 3 in. x 3 in. NaI(TI) device (FWHM about 50 keV).

Hubbard, G. S.↗
NASA NTRS1992

Deposition temperature dependence of the deep defect density for a-Si:H films grown by electron cyclotron resonance microwave plasma

The dependence on deposition temperature of the mobility gap density of states has been determined for hydrogenated amorphous silicon (a-Si:H) films grown by electron cyclotron resonance (ECR) microwave plasma CVD. A minimum in the integrated deep defect density of 1 x 10 exp 16/cu cm was found to occur at a temperature of approximately 250 C, while an Urbach slope minimum of 52 meV was observed at 175 C under our deposition conditions. Based on these measurements the ECR-grown films were found to be of excellent device quality and comparable to a-Si:H films grown by RF plasma-enhanced CVD.

Essick, J. M.↗
NASA NTRS1992

Growth parameters affecting the formation of buried CoSi2 by endotaxy of Co on Si(111)

At growth temperatures of roughly 800 C, Co deposited on Si (111 ) diffuses through a Si capping layer and exhibits oriented growth on buried CoSi2 seeds, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 under certain growth conditions. High-quality continuous single-crystal buried silicide layers have been obtained by endotaxy. This requires very low densities of attractive nucleation sites other than the buried seeds. For this reason, use of a silicon buffer layer and a low base pressure in the molecular-beam epitaxy system are found to be essential. Growth conditions required for high-quality layers and problems which result from growth outside these limits are discussed.

Fathauer, R. W.↗
NASA NTRS1992

Effect of process conditions and chemical composition on the microstructure and properties of chemically vapor deposited SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x)

Subatmospheric pressure CVD processes have been developed to produce theoretically dense, highly pure, void-free and large area bulk materials, SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x). These materials are used for optical elements, such as mirrors, lenses and windows, over a wide spectral range from the VUV to the IR. We discuss the effect of CVD process conditions on the microstructure and properties of these materials, with emphasis on optical performance. In addition, we discuss the effect of chemical composition on the properties of the composite material ZnS(x)Se(1-x). We first present a general overview of the bulk CVD process and the relationship between process conditions, such as temperature, pressure, reactant gas concentration and growth rate, and the microstructure, morphology and properties of CVD-grown materials. Then we discuss specific results for CVD-grown SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x).

Pickering, Michael A.↗
NASA NTRS1992

Fabrication and analysis of Mo-Si multilayers

Mo-Si multilayers have been fabricated in our laboratory for reflecting various soft X-ray wavelengths. Several normal incidence mirrors have been produced for a solar sounding rocket flight. Using properly shaped masks on 3-inch diameter dc magnetrons, we can produce multilayers of a similar size having a uniformity of better than +/- 3 percent over their entire surface area. Peak reflectance of the multilayers are as high as 42 percent at 171 A. Efforts are underway to deposit several layers of different period on top of the multilayers in order to attenuate the reflection of 304 A, a very bright line of He II in the solar spectrum. In the interim, we have made a Mo-Si mirror that reflects at 304 A. In addition to obtaining information on the solar corona at this wavelength, this will greatly reduce the effects of the He II line when its image is appropriately subtracted from others.

Shing, L.↗