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At least 217 records · Page 12

A Fast-Response High-Accuracy Overvoltage Protection Circuit for Soft-Switching Current-Source Converters

Although voltage-source converters (VSCs) have been a focus of research for decades and are widely applied in numerous applications, they face great challenges in short-circuit failures, high dv/dt and electromagnetic interference (EMI), especially using wide bandgap devices. Instead, current-source converters (CSCs) are attracting increasing attention in recent years owing to their friendliness to short-circuit faults, improved EMI, etc. For CSCs, overvoltage is the most catastrophic failure since the semiconductor devices can hardly withstand an overvoltage for a short pulse. In this paper, a fast-response high-accuracy overvoltage protection (OVP) circuit is proposed to protect CSCs from overvoltage damage. It also features a small form factor, good noise-immunity, friendly retrofit capability, and no need for active switches. In this paper, the operating principle and design guideline of the proposed OVP circuit is introduced. Its effectiveness is validated in soft-switching solid-state transformer (S4T) at 500 V. In experiments, the voltage detection error of less than 5% and a propagation delay of fewer than 400 ns have been achieved.

30 DIRECT ENERGY CONVERSION↗

Enhanced charge carrier extraction and transport with interface modification for efficient tin-based perovskite solar cells

Interface modification improves charge carrier extraction in tin-based perovskite solar cells. Tin-based perovskites have become the most promising non-lead perovskites due to their ideal band gap and low toxicity. Although the open circuit voltage of tin-based perovskite solar cells (TPSCs) continues to approach the theoretical value, the short-circuit current is still far from the theoretical value. Here, we describe an interface modification method by regulating the property of hole transport layer, PEDOT:PSS, which improves the surface molecular morphology and the energy level alignment of PEDOT:PSS/perovskite interface. Advanced GIWAXS and IR s-SNOM characterization are conducted to achieve multi-dimensional characterization of nanoscale surface morphology and chemical distribution of PEDOT:PSS. With the multi-attribute optimization, charge carrier extraction and non-radiative recombination are also improved. The resultant TPSCs exhibit a higher power conversion efficiency of 13.32% in compared with the control device of 10.50%, accompanied with an increase in the short-circuit current from 18.10 to 20.50 mA cm −2 and FF from 68.23% to 76.43%. This work demonstrates a reliable strategy for improving charge carrier extraction and device performance for lead-free TPSCs.

Zhao, Zhenzhu↗

Electronic, direct optical, and phonon-assisted optical properties of 4H Si from first principles

The cubic polytype of silicon (Si) is the most commercialized semiconductor material and finds applications in numerous electronic and optoelectronic devices, such as solar cells. However, recent reports on the synthesis of the hexagonal 4H Si polytype have attracted the attention of the scientific community to understand its functional properties. Here, we report the electronic, vibrational, and optical properties of the 4H Si polytype obtained with predictive first-principles calculations, with an emphasis of phonon-assisted absorption in the indirect regime. Compared to the cubic polytype, 4H Si shows a slightly narrower indirect gap by ∼0.05 eV. The calculated phonon-assisted optical spectra show that 4H Si exhibits a stronger absorption coefficient than cubic Si across the visible and IR spectral regions. We further evaluate the short-circuit current density of textured thin-films. We demonstrate that 4H Si can achieve the same short-circuit current density for a five times thinner film compared to the cubic polytype, which mainly resulted from absorption in the indirect gap regime. Our work demonstrates the advantages of 4H Si for thin-film silicon-based solar-cell applications.

Materials Science↗

Shielded conductor cable system

A cable system carries one or more insulated conductors completely enclosed within a shield having one end connected to ground. A lightning protector network connects the other end of the shield to ground. The protector network is normally open circuited and becomes only short circuited in response to a momentary abnormal surge voltage induced in the shield. The protector network's open to short impedance change completes a conductive circuit path between the shield and the two grounded ends for conducting a shield current which has the desired effect of protecting the signal carrying conductors in the cable from the large surge voltage.

Castle, K. D.↗

On the determination of diffusion lengths by means of angle-lapped p-n junctions

A standard procedure for determining the minority carrier diffusion length by means of SEM consists of scanning an angle-lapped surface of a p-n junction and measuring the resulting short circuit current as a function of beam position. The present paper points out that the usual expression linking the short circuit current induced by the electron beam to the angle between the semiconductor surface and the junction plane is incorrect. The correct expression is discussed and it is noted that, for angles less than 10 deg, the new and the old expression are practically indistinguishable.

Von Roos, O.↗

Process Research On Polycrystalline Silicon Material (PROPSM)

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

Culik, J. S.↗

Transient response to three-phase faults on a wind turbine generator

In order to obtain a measure of its responses to short circuits a large horizontal axis wind turbine generator was modeled and its performance was simulated on a digital computer. Simulation of short circuit faults on the synchronous alternator of a wind turbine generator, without resort to the classical assumptions generally made for that analysis, indicates that maximum clearing times for the system tied to an infinite bus are longer than the typical clearing times for equivalent capacity conventional machines. Also, maximum clearing times are independent of tower shadow and wind shear. Variation of circuit conditions produce the modifications in the transient response predicted by analysis.

Gilbert, L. J.↗

Mechanisms of photon-induced changes in silicon solar cell parameters

Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.

Cheng, L. J.↗

Early results of the ATS-6 solar cell flight experiment

This paper presents preliminary ATS-6 solar-cell flight-experiment data through the first 247 days in synchronous orbit. The experiment is transmitting data on forty 2 x 2-cm solar cells representing 16 solar-cell configurations. The experiment is designed to study the effect of this orbit on select solar cells and cover-glass parameters such as solar-cell thickness and base resistivity, cover-glass thickness variation, new cover processes, and materials such as 7940 and 7070 integral covers as well as the FEP covers, the COMSAT 'violet' cell, and backside irradiation effects. The in-space solar-cell data indicate short-circuit currents are running higher by 1% to 8% than in measurements made with solar simulations; maximum power varied between -1% and +6%. Degradation of short-circuit current due to ultraviolet effects was determined to be about 2% after 50 days in orbit. All cells performed well through 247 days in orbit except the FEP-covered cells, which appear to have increased their rate of degradation during the eclipse season.

Goldhammer, L. J.↗

ATS-6 - Solar cell flight experiment after 325 days in synchronous orbit

Preliminary results of the Applications Technology Satellite-6 (ATS-6) solar cell flight experiment to isolate and identify solar cell degradation mechanisms resulting from particulate radiation and to obtain specific design data applicable to extended synchronous spacecraft missions are presented. The experiment includes 80 individual cells representing 16 different solar cell/cover glass configurations. Most of the cells are 0.030 cm thick boron doped n/p cells with 10 ohm cm resistivity and solder-coated AgTi contacts. The voltage-current characteristics were measured regularly. The data for the first 325 days of flight show short circuit currents 1-8% higher than measurements made with solar simulations. Maximum power varied between -1 and +6%. After 50 days in orbit the degradation of short circuit current due to ultraviolet effects was determined to be about 2%. All cells except those with fluorinated ethylene propylene covers performed well after 325 days.

Goldhammer, L. J.↗

Surface and allied studies in silicon solar cells

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Lindholm, F. A.↗

NASA Tech Briefs, December 2008

Topics covered include: Crew Activity Analyzer; Distributing Data to Hand-Held Devices in a Wireless Network; Reducing Surface Clutter in Cloud Profiling Radar Data; MODIS Atmospheric Data Handler; Multibeam Altimeter Navigation Update Using Faceted Shape Model; Spaceborne Hybrid-FPGA System for Processing FTIR Data; FPGA Coprocessor for Accelerated Classification of Images; SiC JFET Transistor Circuit Model for Extreme Temperature Range; TDR Using Autocorrelation and Varying-Duration Pulses; Update on Development of SiC Multi-Chip Power Modules; Radio Ranging System for Guidance of Approaching Spacecraft; Electromagnetically Clean Solar Arrays; Improved Short-Circuit Protection for Power Cells in Series; Electromagnetically Clean Solar Arrays; Logic Gates Made of N-Channel JFETs and Epitaxial Resistors; Improved Short-Circuit Protection for Power Cells in Series; Communication Limits Due to Photon-Detector Jitter; System for Removing Pollutants from Incinerator Exhaust; Sealing and External Sterilization of a Sample Container; Converting EOS Data from HDF-EOS to netCDF; HDF-EOS 2 and HDF-EOS 5 Compatibility Library; HDF-EOS Web Server; HDF-EOS 5 Validator; XML DTD and Schemas for HDF-EOS; Converting from XML to HDF-EOS; Simulating Attitudes and Trajectories of Multiple Spacecraft; Specialized Color Function for Display of Signed Data; Delivering Alert Messages to Members of a Work Force; Delivering Images for Mars Rover Science Planning; Oxide Fiber Cathode Materials for Rechargeable Lithium Cells; Electrocatalytic Reduction of Carbon Dioxide to Methane; Heterogeneous Superconducting Low-Noise Sensing Coils; Progress toward Making Epoxy/Carbon-Nanotube Composites; Predicting Properties of Unidirectional-Nanofiber Composites; Deployable Crew Quarters; Nonventing, Regenerable, Lightweight Heat Absorber; Miniature High-Force, Long-Stroke SMA Linear Actuators; "Bootstrap" Configuration for Multistage Pulse-Tube Coolers; Reducing Liquid Loss during Ullage Venting in Microgravity; Ka-Band Transponder for Deep-Space Radio Science; Replication of Space-Shuttle Computers in FPGAs and ASICs; Demisable Reaction-Wheel Assembly; Spatial and Temporal Low-Dimensional Models for Fluid Flow; Advanced Land Imager Assessment System; Range Imaging without Moving Parts.

Source record↗

Modeling Extreme Deformations in Lithium Ion Batteries

A simultaneously coupled modeling approach to study the electrochemical and thermal behavior of lithium-ion batteries under large mechanical deformation has been developed. The thermo-electrochemical pseudo-2D (P2D) battery model is coupled with a mechanical material model. Mechanical, thermal, and electrochemical models are implemented as user-defined sub-routines in the commercial multi-physics code LS-DYNA. The mechanical strain experienced by anode, cathode and separator results in thickness and porosity changes in each layer which in turn influences electrochemical behavior. The evolution of concentration profiles and cell potential are studied under different mechanical loading conditions. Internal short-circuits caused by mechanical deformation and corresponding physical behaviors are also elucidated. We discuss the competing effects of improved transport at higher temperature due to the internal short-circuit versus a drop in the effective ionic conductivity and electrolyte diffusivity due to mechanical deformation.

47 OTHER INSTRUMENTATION↗

A Review on Protection Challenges on Transmission Lines Connected to Inverter Based Resources

The increased penetration of inverter-based resources (IBRs) connected to transmission grids is challenging how traditional electric power systems operate. Such systems were originally designed based on the dominant presence of synchronous generators. Some main challenges include the increased concerns about system stability due to the reduced system inertia caused by IBRs and the reduced protection reliability caused by the non-deterministic fault current response of IBRs. The protection relays’ algorithms have been designed and validated based on well-known fault current characteristics of synchronous generations, while the short-circuit responses of IBRs heavily depend on their vendor-specific control schemes, which are mainly set to protect inverter semiconductor switches and DC components. The magnitude of short current that IBRs contribute is typically between 1.1–1.5 times the rated current that may behave unstably and incoherently with the voltages. The control scheme of the IBRs also controls the active (P) and reactive (Q) support during system voltage sag and swell conditions. These characteristics challenge not only protective relay schemes but also existing short-circuit software tools to correctly model IBRs for fault studies and protection coordination analyses. Utilities, university researchers, research institutes, and relay manufacturers have performed studies to investigate different aspects of high IBR penetration. Almost all studies support 1) creating international and national standards to regulate the IBRs, 2) revising engineering tools to address shortcomings, and 3) adjusting the protective relay settings to resolve protection problems. This paper summarizes the studies and research conducted in recent years to quantify the impact of IBR penetration on transmission line protection and to identify potential solutions to improve the dependability and reliability of grid protection systems.

14 SOLAR ENERGY↗

A review on protection challenges of Transmission Lines connected to Inverter Based Resources

The increased penetration of inverter-based resources (IBRs) connected to transmission grids is challenging how traditional electric power systems operate. Such systems were originally designed based on the dominant presence of synchronous generators. Some main challenges include the increased concerns about system stability due to the reduced system inertia caused by IBRs and the reduced protection reliability caused by the non-deterministic fault current response of IBRs. The protection relays’ algorithms have been designed and validated based on well-known fault current characteristics of synchronous generations, while the short-circuit responses of IBRs heavily depend on their vendor-specific control schemes, which are mainly set to protect inverter semiconductor switches and DC components. The magnitude of short current that IBRs contribute is typically between 1.1–1.5 times the rated current that may behave unstably and incoherently with the voltages. The control scheme of the IBRs also controls the active (P) and reactive (Q) support during system voltage sag and swell conditions. These characteristics challenge not only protective relay schemes but also existing short-circuit software tools to correctly model IBRs for fault studies and protection coordination analyses.

14 SOLAR ENERGY↗

Environmental Influence of Gravity and Pressure on Arc Tracking of Insulated Wires Investigated

Momentary short-circuit arcs between a defective polyimide-insulated wire and another conductor may thermally char (pyrolize) the insulating material. The charred polyimide, being conductive, can sustain the short-circuit arc, which may propagate along the wire through continuous pyrolization of the polyimide insulation (arc tracking). If the arcing wire is part of a multiple-wire bundle, the polyimide insulation of other wires within the bundle may become thermally charred and start arc tracking also (flash over). Such arc tracking can lead to complete failure of an entire wire bundle, causing other critical spacecraft or aircraft failures. Unfortunately, all tested candidate wire insulations for aerospace vehicles were susceptible to arc tracking. Therefore, a test procedure was designed at the NASA Lewis Research Center to select the insulation type least susceptible to arc tracking. This test procedure addresses the following three areas of concern: (1) probability of initiation, (2) probability of reinitiation (restrike), and (3) extent of arc tracking damage (propagation rate). Item 2 (restrike probability) is an issue if power can be terminated from and reapplied to the arcing wire (by a switch, fuse, or resettable circuit breaker). The degree of damage from an arcing event (item 3) refers to how easily the arc chars nearby insulation and propagates along the wire pair. Ease of nearby insulation charring can be determined by measuring the rate of arc propagation. Insulation that chars easily will propagate the arc faster than insulation that does not char very easily. A popular polyimide insulated wire for aerospace vehicles, MIL-W-81381, was tested to determine a degree of damage from an arcing event (item 3) in the following three environments: (1) microgravity with air at 1-atm pressure, (2) 1g with air at 1 atm, and (3) 1g within a 10^-6 Torr vacuum. The microgravity 1-atm air was the harshest environment, with respect to the rate of damage of arc tracking, for the 20 AWG (American Wiring Gauge) MIL-W-81381 wire insulation type . The vacuum environment resulted in the least damage. Further testing is planned to determine if the environmental results are consistent between insulation types and to evaluate the other two parameters associated with arc tracking susceptibility.

Source record↗

Atomic Oxygen Fluence Monitor

This innovation enables a means for actively measuring atomic oxygen fluence (accumulated atoms of atomic oxygen per area) that has impinged upon spacecraft surfaces. Telemetered data from the device provides spacecraft designers, researchers, and mission managers with real-time measurement of atomic oxygen fluence, which is useful for prediction of the durability of spacecraft materials and components. The innovation is a compact fluence measuring device that allows in-space measurement and transmittance of measured atomic oxygen fluence as a function of time based on atomic oxygen erosion yields (the erosion yield of a material is the volume of material that is oxidized per incident oxygen atom) of materials that have been measured in low Earth orbit. It has a linear electrical response to atomic oxygen fluence, and is capable of measuring high atomic oxygen fluences (up to >10(exp 22) atoms/sq cm), which are representative of multi-year low-Earth orbital missions (such as the International Space Station). The durability or remaining structural lifetime of solar arrays that consist of polymer blankets on which the solar cells are attached can be predicted if one knows the atomic oxygen fluence that the solar array blanket has been exposed to. In addition, numerous organizations that launch space experiments into low-Earth orbit want to know the accumulated atomic oxygen fluence that their materials or components have been exposed to. The device is based on the erosion yield of pyrolytic graphite. It uses two 12deg inclined wedges of graphite that are over a grit-blasted fused silica window covering a photodiode. As the wedges erode, a greater area of solar illumination reaches the photodiode. A reference photodiode is also used that receives unobstructed solar illumination and is oriented in the same direction as the pyrolytic graphite covered photodiode. The short-circuit current from the photodiodes is measured and either sent to an onboard data logger, or transmitted to a receiving station on Earth. By comparison of the short-circuit currents from the fluence-measuring photodiode and the reference photodiode, one can compute the accumulated atomic oxygen fluence arriving in the direction that the fluence monitor is pointing. The device produces a signal that is linear with atomic oxygen fluence using a material whose atomic oxygen erosion yield has been measured over a period of several years in low-Earth orbit.

Banks, Bruce A.↗

A Review on Protection Challenges of Transmission Lines Connected to Inverter-Based Resources

The increased penetration of inverter-based resources (IBRs) connected to transmission grids is challenging how traditional electric power systems operate. Such systems were originally designed based on the dominant presence of synchronous generators. Some main challenges include the increased concerns about system stability due to the reduced system inertia caused by IBRs and the reduced protection reliability caused by the non-deterministic fault current response of IBRs. The protection relays’ algorithms have been designed and validated based on well-known fault current characteristics of synchronous generations, while the short-circuit responses of IBRs heavily depend on their vendor-specific control schemes, which are mainly set to protect inverter semiconductor switches and DC components. The magnitude of short current that IBRs contribute is typically between 1.1–1.5 times the rated current that may behave unstably and incoherently with the voltages. The control scheme of the IBRs also controls the active (P) and reactive (Q) support during system voltage sag and swell conditions. These characteristics challenge not only protective relay schemes but also existing short-circuit software tools to correctly model IBRs for fault studies and protection coordination analyses

14 SOLAR ENERGY↗