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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Direct determination of the zero-field splitting for the Fe 3+ ion in a synthetic polymorph of NaMgFe(C 2 O 4 ) 3 ·9H 2 O: A natural metal-organic framework

Here we employed inelastic neutron scattering (INS), specific heat, and magnetization analysis to study the magnetism in a synthetic polymorph of the quasi-two-dimensional natural metal-organic framework material, stepanovite NaMgFe(C 2 O 4 ) 3 ∙9H 2 O. No long-range magnetic order can be observed down to 0.5 K. The INS spectra show two dispersionless excitations at energy transfer 0.028(1) and 0.050(1) meV at base temperature, which are derived from the magnetic transitions between zero-field splitting (ZFS) of S = 5/2 ground state multiplets of Fe 3+ ion. Further analysis of the INS results shows that the Fe 3+ ion has an easy-axis anisotropy with axial ZFS parameter D = –0.0128(5) meV and rhombic parameter E = 0.0014(5) meV. The upward behavior at zero field and Schottky-like peak under magnetic field of the low-temperature magnetic specific heat further support the INS results. Our results clearly reveal the magnetic ground and excited state of this stepanovite polymorph.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Beyond magnons in Nd 2 ScNbO 7 : An Ising pyrochlore antiferromagnet with all-in–all-out order and random fields

We report the low-temperature magnetic properties of Nd 3+ pyrochlore Nd 2 ScNbO 7 . Susceptibility and magnetization show an easy-axis moment, and heat capacity reveals a phase transition to long-range order at T N =371(2) mK with a fully recovered ΔS=Rln(2), 53% of it recovered for T>T N . Elastic neutron scattering shows a long-range all-in all-out magnetic order with low-Q diffuse elastic scattering. Inelastic neutron scattering shows a low-energy flat band, indicating a magnetic Hamiltonian similar to Nd 2 Zr 2 O 7 . Nuclear hyperfine excitations measured by ultra-high-resolution neutron backscattering indicate a distribution of static electronic moments below T N , which may be due to B-site disorder influencing Nd crystal electric fields. Analysis of heat-capacity data shows an unexpected T-linear or T 3/2 term which is inconsistent with conventional magnon quasiparticles, but is consistent with fractionalized spinons or gapless local spin excitations. We use legacy data to show similar behavior in Nd 2 Zr 2 O 7 . Comparing local static moments also reveals a suppression of the nuclear Schottky anomaly in temperature, evidencing a fraction of Nd sites with nearly zero static moment, consistent with exchange-disorder-induced random singlet formation. Finally, taken together, these measurements suggest an unusual fluctuating magnetic ground state which mimics a spin liquid, but may not actually be one.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Evolution of non-Kramers doublets in magnetic field in PrNi 2 Cd 20 and PrPd 2 Cd 20

Praseodymium-based 1-2-20 cage compounds PrT 2 X 20 (T is generally Ti, V, Nb, Ru, Rh, Ir; and X is either Al, Zn, or Cd) provide yet another platform to study nontrivial electronic states of matter ranging from topological and magnetic orders to unconventional multipolar orders and superconductivity. In this paper, we report measurements of the electronic heat capacity in two Pr-based 1-2-20 materials: PrNi 2 Cd 20 and PrPd 2 Cd 20 . We find that the lowest-energy multiplet of the Pr 4f 2 valence configuration is a Γ 3 non-Kramers doublet and the first excited triplet is assumed to be a magnetic Γ 5 . By analyzing the dependence of the energy splitting between the ground and first excited singlet states on an external magnetic field, we found that the maximum in the heat capacity corresponding to the Schottky anomaly in PrPd 2 Cd 20 , unlike PrNi 2 Cd 20 , shows a pronounced linear dependence on an external magnetic field at higher field values. In conclusion, this effect is associated with the exchange interactions between the field-induced magnetic dipole moments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Disorder-induced local strain distribution in Y-substituted TmVO 4

We report an investigation of the effect of substitution of Y for Tm in Tm 1-x ⁢Y x VO 4 via low-temperature heat capacity measurements, with the yttrium content x varying from 0 to 0.997. Because the Tm ions support a local quadrupolar (nematic) moment, they act as reporters of the local strain state in the material, with the splitting of the ion's non-Kramers crystal field ground state proportional to the quadrature sum of the in-plane tetragonal symmetry-breaking transverse and longitudinal strains experienced by each ion individually. Analysis of the heat capacity, therefore, provides detailed insights into the distribution of local strains that arise as a consequence of the chemical substitution. These local strains suppress long-range quadrupole order for x > 0.22, and result in a broad Schottky-like feature for higher concentrations. Heat capacity data are compared to expectations for a distribution of uncorrelated (random) strains. For dilute Tm concentrations, the heat capacity cannot be accounted for by randomly distributed strains, demonstrating the presence of significant strain correlations between sites. For intermediate Tm concentrations, these correlations must still exist, but the data cannot be distinguished from that which would be obtained from a two-dimensional Gaussian distribution. The crossover between these limits is discussed in terms of the interplay of key lengthscales in the substituted material. Furthermore, the central result of this work, namely that local strains arising from chemical substitution are not uncorrelated, has implications for the range of validity of theoretical models based on random effective fields that are used to describe such chemically substituted materials, particularly when electronic nematic correlations are present.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magnetic structure and Ising-like antiferromagnetism in the bilayer triangular lattice compound NdZnPO

Here, the complex interplay of spin frustration and quantum fluctuations in low-dimensional quantum materials leads to a variety of intriguing phenomena. This research focuses on a detailed analysis of the magnetic behavior exhibited by NdZnPO, a bilayer spin-1/2 triangular lattice antiferromagnet. The investigation employs magnetization, specific heat, and powder neutron scattering measurements. At zero field, a long-range magnetic order is observed at T N = 1.64 K. Powder neutron diffraction experiments show the Ising-like magnetic moments along the c-axis, revealing a stripe like magnetic structure with magnetic propagation vector (1/2, 0, 1/2). Application of a magnetic field along the c-axis suppresses the antiferromagnetic order, leading to a fully polarized ferromagnetic state above B c = 4.5 T. This transition is accompanied by notable enhancements in the nuclear Schottky contribution. Moreover, the absence of spin frustration and expected field-induced plateau-like phases are remarkable observations. Detailed calculations of magnetic dipolar interactions revealed complex couplings reminiscent of a honeycomb lattice, suggesting the potential emergence of Kitaev-like physics within this system. This comprehensive study of the magnetic properties of NdZnPO highlights unresolved intricacies, underscoring the imperative for further exploration to unveil the underlying governing mechanisms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Measurement of the Isolated Nuclear Two-Photon Decay in Ge 72

The nuclear two-photon or double-gamma (2 γ ) decay is a second-order electromagnetic process whereby a nucleus in an excited state emits two gamma rays simultaneously. To be able to directly measure the 2⁢ γ decay rate in the low-energy regime below the electron-positron pair-creation threshold, we combined the isochronous mode of a storage ring with Schottky resonant cavities. The newly developed technique can be applied to isomers with excitation energies down to ~100 keV and half-lives as short as ~10 ms. The half-life for the 2⁢ γ decay of the first-excited 0 + state in bare 72 Ge ions was determined to be 23.9(6) ms, which strongly deviates from expectations.

59 ≤ A ≤ 89↗
DOE OSTI2024

First-principles determination of the phonon-point defect scattering and thermal transport due to fission products in ThO 2

This work presents the first-principles calculations of the lattice thermal conductivity degradation due to point defects in thorium dioxide using an iterative solution of the Pierels-Boltzmann transport equation. We have used the non perturbative Green’s function methodology to compute the phonon- point defect scattering rates that consider the local distortion around the point defect, including the mass difference changes, interatomic force constants, and structural relaxation near the point defects. The point defects considered in this work include the vacancy of thorium ($V$ $TH$ ) and oxygen ($V$ $O$ ), substitutions of helium ($He$ $Th$ ), krypton ($Kr$ $Th$ ), zirconium ($Zr$ $Th$ ), iodine ($I$ $Th$ ) and xenon ($Xe$ $Th$ ) in the thorium site, and the three different configurations of the Schottky defects. The results of the phonon-defect scattering rate reveal that, among all the considered intrinsic defects, the thorium vacancy and helium substitution in the thorium site scatter the phonon most due to the substantial changes in the force constant and structural distortions. The scattering of phonons due to the substitutional defects unveils that the zirconium atom scatters phonons the least, followed by xenon, iodine, krypton, and helium. This is contrary to the intuition that the scattering strength follows $He$ $Th$ > $Kr$ $Th$ > $Zr$ $Th$ > $I$ $Th$ > $Xe$ $Th$ based on the mass difference. This striking difference in the zirconium phonon scattering is due to the local chemical environment changes. Zirconium is an electropositive element with valency similar to thorium and, therefore, can bond with the oxygen atoms, thus creating less force constant variance compared to iodine, an electronegative element noble gas helium, xenon, and krypton. In conclusion, these results can serve as the benchmark for the analytical models and help the engineering-scale modeling effort for nuclear design.

36 MATERIALS SCIENCE↗
DOE OSTI2021

System-on-Chip approach microwave diagnostics development for burning plasma

System-on-chip (SoC) millimeter wave integrated circuit technology has been developed and employed in chip heterodyne radiometers in Electron Cyclotron Emission Imaging (ECEI) and Microwave Imaging Reflectometer (MIR) on the DIII-D tokamak for 2D electron temperature and density fluctuation diagnostics. The W-band (75-110 GHz) ECEI system has been employed with 20 poloidal horn receiver modules with customized monolithic integrated circuit chips and internal local oscillator coupling path. The new SoC approach demonstrates > 30 dB additional gain on the receiver and 95% electronics noise suppression compared to the previous Schottky diode mixer array . An F-band (110-140 GHz) receiver chip has been developed to measure MHD and turbulence behavior on the DIII-D high-field side, such as Alfven eigenmodes. Furthermore, it can image pedestal structure evolution on fusion facilities with stronger magnetic fields, such as ASDEX-U, EAST, HL-2M, and LHD. The F-band chip performance has been tested in the laboratory. Also, V-band (55-75 GHz) transmitter and receiver modules (55-75 GHz) have been developed for DIII-D and NSTX-U Furthermore, microwave Imaging Reflectometer (MIR) application suitability for 2D density fluctuation imaging on the pedestal region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

Metal–semiconductor–metal (MSM) configured UV photodiodes (PD’s) were designed and fabricated on an AlGaN/GaN–based substrate for efficient and ultrafast UV detection. The purpose was to investigate the feasibility of obtaining efficient and ultrafast temporal response from these devices in the UV given the challenges associated with the formation of Schottky contacts on laterally oriented AlGaN/GaN thin films. Two sets of devices were implemented using Pt and Au as metal contacts with 5-µm finger width, 5-µm finger spacing, and a 50-µm x 50-µm active area. Spectral and voltage bias studies were done to establish the spectral profile and the effect of bias voltage on the responsivity of the detectors at 265 nm. Here, the best vertical MSM PD’s produced 0.6-A/W responsivity under 10-V bias voltage at 265 nm. Peak spectral responsivities were recorded as 1.35 A/W and 1.25 A/W at 240 nm for Pt and Au PD’s, respectively.

42 ENGINEERING↗
DOE OSTI2021

Al 0.7 Ga 0.3 N MESFET With All-Refractory Metal Process for High Temperature Operation

In this work, ultrawide bandgap Al 0.7 Ga 0.3 N MESFETs with refractory Tungsten Schottky and Ohmic contacts are studied in 300–675 K environments. Variable-temperature dc electrical transport reveals large ON-state drain current densities for an AlGaN device: 209 mA/mm at 300 K and 156 mA/mm at 675 K in the ON-state (25% reduction). Drain and gate currents are only weakly temperature-dependent, suggesting potential for engineering temperature invariant operation. The ON-/ OFF-ratio is limited by OFF-state leakage through the gate, which is attributed to damage from sputter deposition. Future work using refractory metals with larger work functions that are deposited by electron beam deposition is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2022

Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.

42 ENGINEERING↗
DOE OSTI2022

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

The study of charge carrier transport at nanoscale electrical contacts is crucial for the development of next-generation electronics. In this study, we review recent modeling efforts on quantum tunneling, current crowding, and contact resistance across electrical interfaces with nanometer scale dimensions. A generalized self-consistent model for quantum tunneling induced electron transport in metal–insulator–metal (MIM) junctions is summarized. Rectification of a dissimilar MIM junction is reviewed. A modified two-dimensional (2D) transmission line model is used to investigate the effects of spatially varying specific contact resistivity along the contact length. The model is applied to various types of electrical contacts, including ohmic contacts, MIM junction based tunneling contacts, and 2D-material-based Schottky contacts. Roughness engineering is recently proposed to offer a possible paradigm for reducing the contact resistance of 2D-material-based electrical contacts. Contact interface engineering, which can mitigate current crowding near electrical contacts by spatially designing the interface layer thickness or properties, without requiring an additional material or component, is briefly reviewed. Tunneling engineering is suggested to eliminate severe current crowding in highly conductive ohmic contacts by introducing a thin tunneling layer or gap between the contact members. Furthermore, unsolved problems and challenges are also discussed.

2D materials↗
DOE OSTI2022

Longevity evaluation of SiC based alpha voltaic batteries with surface alpha sources

The alpha emitting actinide 241 Am is electrodeposited on the surface of the Pt electrode of in-house fabricated SiC Schottky diodes. With 17 nCi 241 Am directly coated on the top of a device, the 2-pi geometry yields a high energy (5.486 MeV) and a long-term irradiation accumulating to a high fluence (1.6 × 10 9 alpha particles’ infusion/month). The forward, reverse I/V, and dark current, are periodically measured to monitor key characteristics of device durability for any sign of degradation over time. The direct deposition of actinides on the surface of the device also enables the evaluation of radiation damage through alpha particles’ energy spectroscopic performance, which shows a clear spectrum degradation that can be reversed by optical excitation of the device prior to spectrum acquisition. As an analytical aide, the device performance is also simulated by Allpix 2 . Lastly, this study provides an insight into the durability of 4H-SiC as an energy converter option for alpha-voltaic batteries and the survivability in the other harsh environment found in nuclear fuel cycle, high energy physics, fission, fusion, and space exploration where rad-hard sensors are required.

Americium↗
DOE OSTI2023

Metal-semiconductor-metal structured p-i-n GaN/AlGaN ultrafast detectors for deep-UV photodetection

We report the productive outcome of the design, fabrication, and testing of a new class of GaN/AlGaN-based ultrafast, sensitive photodiodes for deep-UV solar blind photodetection. Pt was employed as the interdigitated metal electrode to establish that while a Schottky contact was formed at the metal/semiconductor heterojunction, it was the quantum wells in the p-i-n vertical structure that produced the diode characteristics of the detectors. The metal–semiconductor–metal design retained its ultrafast property as expected in the p-i-n structure because the spacing between the interdigitated fingers was asymmetrically implemented to optimize the photogenerated carriers’ transit time from the quantum well to the external circuitry. Also, the vertical p-i-n structure provided its renowned efficient photocarrier generation, which was significantly enhanced by the delta quantum well architecture of the vertical epitaxial structure. The active area of the device was 300 μm × 300 μm with 5-μm finger width, and asymmetric electrode spacing of 2 μm, 3 μm, and 5 μm. Here, the best device had peak responsivity of 3.5 A/W under 262-nm illumination with full width half maximum of 337.2-ps and 37.5-ps rise times when biased with 20 V.

efficient↗
DOE OSTI2023

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ~20-nm-thin films consisting of an amorphous HfO x host matrix interspersed with ~2-nm-wide, ~5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥10 4 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing–dependent plasticity. The presented concept unlocks additional design variables for RS devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Commissioning of the LCLS-II Prototype HOM Detectors with Tesla-Type Cavities at Fast

Experiments at the Fermilab Accelerator Science and Technology* (FAST) facility detected electron beam-induced high order mode (HOM) signals from Tesla superconducting cavities. This paper describes some of the signal detection hardware used in this experiment, as well as measurements of the HOM signal magnitude versus beam trajectory. These measurements were made both with a single bunch and with a train of 50 bunches at bunch charges from 400 pC/b down to 10 pC/b. The detection hardware is designed for use with the Tesla superconducting cavities of LCLS-II at SLAC** and is based on a prototype already in use at Fermilab. The HOM signal passes through a bandpass filter that is centered on several cavity dipole modes and a zero bias Schottky diode detects its magnitude. Direct comparisons were made between the FNAL chassis and the SLAC prototype for identical beam steering conditions. To support measurements with bunch charges as low as 10 pC, the SLAC detector has RF amplification between the bandpass filter and the diode detector. With this hardware, usable HOM signal measurements are obtained with a single bunch of 10 pC in cryomodule cavities as will be needed for LCLS-II.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Time-Resolved Spectroscopy of Insulator-Metal Transitions: Exploring Low-Energy Dynamics in Strongly Correlated Systems. Final Report

Transition metal oxides (TMOs) have attracted much attention in recent years. The strong coupling between charge, spin, and orbital degrees of freedom creates novel functional properties. The research at the interplay between ferromagnetism, ferroelectricity and conductivity provides a promising way to the development of future spintronic devices. The interface characterization of multifunctional oxide heterostructures is crucial to understand deeply the magnetic response, spin injection and spin transport. In year one, we characterized optically the magnetic property with the method of magnetization-induced second-harmonic generation (MSHG), which is a sensitive technique to selectively probe the interface where the spatial inversion symmetry is broken. The interface of n-type BaTiO 3 (BTO)/La 0.67 Sr 0.33 MnO 3 (LSMO) forms a Schottky barrier and displays a good diode effect. By applying an external electric field across the sample, we observe the magnetoelectric (ME) coupling effect to modulate the interface magnetization. The voltage dependent magnetic contrast sharply vanishes at positive voltage (applied to LSMO contact) and reveals a ferromagnetic (FM)-to- antiferromagnetic (AFM) transition occurring at the interface, while the magneto-optic Kerr effect (MOKE) indicates that the bulk property is not affected. The strain mediated mechanism and ferroelectric (FE) polarization induced charge medicated mechanism are both discussed, but they do not play an important role in the observed magnetization transition. A new mechanism is proposed - the injected minority spins through strong Hund's interaction with the local magnetic moments at positive voltage weaken the double-exchange interaction of nearby Mn e g electrons, thereby reducing the ferromagnetic (FM) ordering. The dominant superexchange interaction of localized t 2g electrons finally leads to the AFM configuration. By reducing the electron carrier concentration of BTO, a positive voltage shift of the transition is observed. The oxygen richer sample with lower carrier concentration requires a higher voltage to increase the hole doping level of LSMO to induce the interfacial AFM phase. By inserting a thin (1nm) La 0.5 Ca 0.5 MnO 3 layer between BTO and LSMO, the interface magnetic response from LSMO is enhanced. In year two, a non-multiferroic heterostructure SrTiO 3 (STO)/ La 0.5 Ca 0.5 MnO 3 (LCMO)/La 0.67 Sr 0.33 MnO 3 (LSMO) was studied. In this system, the interface FM-AFM transition is observed at negative voltage. The STO layer may act as a hole-donating layer, which induces the hole transfer to LSMO making it overdoped, while the LCMO interlayer at the 0.5 hole doping level displays complicated CE type AFM phase. Thus the AFM phase is dominant at the interface and electron accumulation is required to induce the FM phase by applying a negative voltage. For oxygen rich sample, the magnetic MSHG loop reappears at high positive voltage (around +2.5 V). At high doping level (x > 0.5), LSMO exhibits A-type AFM order, consisting of AFM superexchange coupling between adjacent layers and intralayer FM double-exchange coupling. The less tensile strain of STO and LSMO due to a smaller lattice mismatch as compared to BTO would result in a weaker interlayer coupling . Thus, interfacial A-type AFM order can occur in STO/LCMO/LSMO heterostructure at high hole doping concentration. The study of ME coupling of multifunctional oxide heterostructures is definitely important to the development and performance of future spintronic devices. The results presented here regarding the interfacial magnetic transition controlled by an external electric field offer some new perspective to study the spin transport of magnetic tunnel junctions.

36 MATERIALS SCIENCE↗