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Final Scientific/Technical Report Ion implantation-enabled fabrication of AlN based Schottky diodes
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Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching
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Carbon quantum dots interfacial modified graphene/silicon Schottky barrier solar cell
The two-dimensional thin film, as an effective interface modification layer to improve the power conversion efficiency (PCE) of graphene/silicon (Gr/Si) heterojunction solar cells has attracted extensive attention recently. However, the complicated manufacturing process and specialized equipment requirements impede its broad application. Herein, carbon quantum dots (CQDs) fabricated under the mild reaction condition was first time used to modify Gr/Si devices interface structure. The effects of CQDs size distributions and coating thickness on J-V characteristics and the energy band structure of Gr/CQDs/Si solar cells were systematically analyzed. The findings indicate that the PCE of resulting Gr/CQDs/Si solar cells could reach 9.97% when the thickness and sizes of CQDs interlayer are ~26 nm and 4–7 nm, without any chemical doping, which is 6.8-times PCE than that of virgin Gr/Si solar cells. The CQDs interlayer serves as both an electron blocking layer and hole transport layer to reduce the carrier recombination, leading to a lower reverse saturation current as well as a larger VOC then improved the device performance. The enhanced PCE shows that the CQDs species have the potential applications in a cost-effective photovoltaic device.
Specific heats and Schottky peaks for black holes in extended thermodynamics
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Corrigendum: Schottky effect on the wavelength threshold for the photo-detachment from charged metallic nanoparticles (2023 J. Phys. D: Appl. Phys. 56 29LT01)
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Schottky signal modification as a diagnostic tool for coherent electron cooling
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First-principles study on the electronic properties and Schottky barrier of WC/ W S 2 and WC/ WS e 2 heterostructures
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Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
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Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
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Self-Biased Mo/n-4H-SiC Schottky Barriers as High-Performance Ultraviolet Photodetectors
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Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.
Abstract not provided.