Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SOLID STATE DEVICE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12

Frequency shifting with a solid-state switching capacitor

Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and reliably with simple circuit comprising conventional resistor and solid-state switching device which can be equivalent to two capacitors, depending on switching state.

Mattauch, R. J.↗

Measurement of Elemental Abundance of Very Low Energy Solar Cosmic Rays

Heavy interplanetary particles were observed during a solar flare period between October 29 and November 4, 1972. The nuclear abundance was determined by a two parameter analysis (dE/dx vs E technique) of a thin window proportional counter - solid state detector device aboard the Explorer 47 (IMP-7) satellite. Energy spectra are given for C, O and Fe. The elemental abundance relative to oxygen is determined for carbon, neon, magnesium, silicon and the iron group in the energy range 0.62 to 6.9 MeV/nucleon. For the Fe/O ratio no energy dependence could be observed within the error limits.

Hovestadt, D.↗

Measurement of elemental abundance of very low energy solar cosmic rays

Heavy interplanetary particles (Z from 3 to 30) have been observed during a solar flare period between October 29 and November 4, 1972. The nuclear abundance has been determined by a two parameter analysis of a thin window proportional counter - solid state detector device aboard the Explorer 47 (IMP-7) satellite. Energy spectra are given for C, O and Fe. The elemental abundance relative to oxygen is determined for carbon, neon, magnesium, silicon and the iron group in the energy range 0.62 to 6.9 MeV/nucleon. For the Fe/O ratio no energy dependence could be observed within the error limits.

Hovestadt, D.↗

Advanced space system concepts and their orbital support needs (1980 - 2000). Volume 2: Final report

The results are presented of a study which identifies over 100 new and highly capable space systems for the 1980-2000 time period: civilian systems which could bring benefits to large numbers of average citizens in everyday life, much enhance the kinds and levels of public services, increase the economic motivation for industrial investment in space, expand scientific horizons; and, in the military area, systems which could materially alter current concepts of tactical and strategic engagements. The requirements for space transportation, orbital support, and technology for these systems are derived, and those requirements likely to be shared between NASA and the DoD in the time period identified. The high leverage technologies for the time period are identified as very large microwave antennas and optics, high energy power subsystems, high precision and high power lasers, microelectronic circuit complexes and data processors, mosaic solid state sensing devices, and long-life cryogenic refrigerators.

Bekey, I.↗

The 'depletion layer' of amorphous p-n junctions

It is shown that within reasonable approximations for the density of state distribution within the mobility gap of a:Si, a one-to-one correspondence exists between the electric field distribution in the transition region of an amorphous p-n junction and that in the depletion layer of a crystalline p-n junction. Thus it is inferred that the depletion layer approximation which leads to a parabolic potential distribution within the depletion layer of crystalline junctions also constitutes a fair approximation in the case of amorphous junctions. This fact greatly simplifies an analysis of solid-state electronic devices based on amorphous material (i.e., solar cells).

Von Roos, O.↗

Camera for Monitoring Vegetation

Video camera uses solid-state imaging devices and light filters to bring out subtle spectral differences between healthy and stressed vegetation differences not readily detectable with infrared film cameras. Camera employs two detector arrays. Video camera made small and easily portable. Eliminates need for refrigeration of film before use, and provides instantaneous output with no delay for film development.

Martin, T. Z.↗

The utilization of parallel processing in solving the inviscid form of the average-passage equation system for multistage turbomachinery

A procedure is outlined which utilizes parallel processing to solve the inviscid form of the average-passage equation system for multistage turbomachinery along with a description of its implementation in a FORTRAN computer code, MSTAGE. A scheme to reduce the central memory requirements of the program is also detailed. Both the multitasking and I/O routines referred to in this paper are specific to the Cray X-MP line of computers and its associated SSD (Solid-state Storage Device). Results are presented for a simulation of a two-stage rocket engine fuel pump turbine.

Mulac, Richard A.↗

PAN AIR: A computer program for predicting subsonic or supersonic linear potential flows about arbitrary configurations using a higher order panel method. Volume 2: User's manual (version 3.0)

A comprehensive description of user problem definition for the PAN AIR (Panel Aerodynamics) system is given. PAN AIR solves the 3-D linear integral equations of subsonic and supersonic flow. Influence coefficient methods are used which employ source and doublet panels as boundary surfaces. Both analysis and design boundary conditions can be used. This User's Manual describes the information needed to use the PAN AIR system. The structure and organization of PAN AIR are described, including the job control and module execution control languages for execution of the program system. The engineering input data are described, including the mathematical and physical modeling requirements. Version 3.0 strictly applies only to PAN AIR version 3.0. The major revisions include: (1) inputs and guidelines for the new FDP module (which calculates streamlines and offbody points); (2) nine new class 1 and class 2 boundary conditions to cover commonly used modeling practices, in particular the vorticity matching Kutta condition; (3) use of the CRAY solid state Storage Device (SSD); and (4) incorporation of errata and typo's together with additional explanation and guidelines.

Sidwell, Kenneth W.↗

Design and development of an all-solid-state laser unit for microgravity combustion applications

The laser-induced fluorescence (LIF) technique is a sensitive and noninvasive method for imaging of flames and for monitoring of temperature and the presence of transient molecular species in flames. Our research effort has two major objectives: (1) to use LIF to study the fundamentals of microgravity combustion via spectroscopic characterization of free radicals, and (2) to design and develop an all-solid-state portable laser unit for combustion studies in a microgravity environment. Well-characterized free radicals, namely hydroxyl (OH) and methoxy (CH3O), have analytically convenient bands that can be laser-excited in the 280-298 nm spectral region with the newly discovered solid-state tunable laser, which is based on the LiCaAIF6:Ce3+(LiCAF:Ce) single crystal pumped by the quadrupled (266 nm) output of a Q-switched YAG:Nd laser. The 266 nm YAG radiation (of about 10 mJ pulse energy) was split into two beams of about equal intensity, one used for photolysis of the free radical precursor and the other used for pumping the laser crystal. Tunability of the LiCAF:Ce laser was provided by a step-motor-driven Littrow-mounted diffraction grating. Laser excitation spectra of the CH3O radical was recorded in the 291.5-296.5 nm region with 0.15 cm(exp -1) resolution. Laboratory experiments have thus successfully shown that the idea of using the LiCAF:Ce laser as a dual-purpose photolysis and excitation source can pay rich dividends and that such a laser can be the center piece of an all-solid-state portable device that can be used for routine analytical investigations of microgravity combustion phenomena.

Kamal, Mohammed M.↗

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗

Potential High-Temperature Shape-Memory-Alloy Actuator Material Identified

Shape-memory alloys are unique "smart materials" that can be used in a wide variety of adaptive or "intelligent" components. Because of a martensitic solid-state phase transformation in these materials, they can display rather unusual mechanical properties including shape-memory behavior. This phenomenon occurs when the material is deformed at low temperatures (below the martensite finish temperature, Mf) and then heated through the martensite-to-austenite phase transformation. As the material is heated to the austenite finish temperature Af, it is able to recover its predeformed shape. If a bias is applied to the material as it tries to recover its original shape, work can be extracted from the shape-memory alloy as it transforms. Therefore, shape-memory alloys are being considered for compact solid-state actuation devices to replace hydraulic, pneumatic, or motor-driven systems.

Noebe, Ronald D.↗

Solid state UV detectors

Explore the source record for details and available documents.

UV detectors Origins solid state devices microchan↗

Methods for growth of relatively large step-free SiC crystal surfaces

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Neudeck, Philip G.↗

Solid State Light Evaluation in the U.S. Lab Mockup

This document constitutes the publication of work performed by the Space Human Factors Laboratory (mail code SF5 at the time) at the Johnson Space Center (JSC) in the months of June and July of 2000. At that time, the Space Human Factors Laboratory was part of the Space Human Factors Branch in the Flight Projects Division of the Space and Life Directorate. This report was originally to be a document for internal consumption only at JSC as it was seen to be only preliminary work for the further development of solid state illumination for general lighting on future space vehicles and the International Space Station (ISS). Due to funding constraints, immediate follow-on efforts were delayed and the need for publication of this document was overcome by other events. However, in recent years and with the development and deployment of a solid state light luminaire prototype on ISS, the time was overdue for publishing this information for general distribution and reference. Solid state lights (SSLs) are being developed to potentially replace the general luminaire assemblies (GLAs) currently in service in the International Space Station (ISS) and included in designs of modules for the ISS. The SSLs consist of arrays of light emitting diodes (LEDs), small solid state electronic devices that produce visible light in proportion to the electrical current flowing through them. Recent progressive advances in electrical power-to-light conversion efficiency in LED technology have allowed the consideration of LEDs as replacements for incandescent and fluorescent light sources in many circumstances, and their inherent advantages in ruggedness, reliability, and life expectancy make them attractive for applications in spacecraft. One potential area of application for the SSLs in the U.S. Laboratory Module of the ISS. This study addresses the suitability of the SSLs as replacements for the GLAs in this application.

Maida, James c.↗

Compact Full-Field Ion Detector System for CubeSat Science Beyond LEO

NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop a Compact Full-Field Ion Detector System (CFIDS). The CFIDS is designed to be an extremely compact, low cost instrument, capable of being flown on a wide variety of deep space platforms, to provide comprehensive (composition, velocity, and direction) in situ measurements of heavy ions in space plasma environments with higher fidelity, than previously available.

Extraterrestrial Radiation↗

Compact Full-Field Ion Detector System for SmallSats Beyond LEO

NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop a Compact Full-Field Ion Detector System (CFIDS). The CFIDS is designed to be an extremely compact, low cost instrument, capable of being flown on a wide variety of deep space platforms, to provide multi-directional, comprehensive (composition, velocity, and direction) in-situ measurements of heavy ions in space plasma environments.

Semiconductors (materials)↗

Multidirectional Cosmic Ray Ion Detector for Deep Space CubeSats

Understanding the nature of anisotropy of solar energetic protons (SEPs) and galactic cosmic ray (GCR) fluxes in the interplanetary medium is crucial in characterizing time-dependent radiation exposure in interplanetary space for future exploration missions. NASA Glenn Research Center has proposed a CubeSat-based instrument to study solar and cosmic ray ions in lunar orbit or deep space. The objective of Solar Proton Anisotropy and Galactic cosmic ray High Energy Transport Instrument (SPAGHETI) is to provide multi-directional ion data to further understand anisotropies in SEP and GCR flux. The instrument is to be developed using large area detectors fabricated from high density, high purity silicon carbide (SiC) to measure linear energy transfer (LET) of ions. Stacks of these LET detectors are arranged in a CubeSat at orthogonal directions to provide multidirectional measurements. The low-noise, thermally-stable nature of silicon carbide and its radiation tolerance allows the multidirectional array of detector stacks to be packed in a 6U CubeSat without active cooling. A concept involving additional coincidence/anticoincidence detectors and a high energy Cherenkov detector is possible to further expand ion energy range and sensitivity.

Extraterrestrial Radiation↗

Multidirectional Cosmic Ray Ion Detector for Deep Space CubeSats

NASA Glenn Research Center has proposed a CubeSat-based instrument to study solar and cosmic ray ions in lunar orbit or deep space. The objective of Solar Proton Anisotropy and Galactic cosmic ray High Energy Transport Instrument (SPAGHETI) is to provide multi-directional ion data to further understand anisotropies in SEP and GCR flux.

Extraterrestrial Radiation↗