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At least 217 records · Page 12

Simulation of space charge compensation in a multibeamlet negative ion beam

Ion beam space charge compensation occurs by cumulating in the beam potential well charges having opposite polarity, usually generated by collisional processes. In this paper we investigate the case of a H{sup −} ion beam drift, in a bi-dimensional approximation of the NIO1 (Negative Ion Optimization phase 1) negative ion source. H{sup −} beam ion transport and plasma formation are studied via particle-in-cell simulations. Differential cross sections are sampled to determine the velocity distribution of secondary particles generated by ionization of the residual gas (electrons and slow H{sub 2}{sup +} ions) or by stripping of the beam ions (electrons, H, and H{sup +}). The simulations include three beamlets of a horizontal section, so that multibeamlet space charge and secondary particle diffusion between separate generation regions are considered, and include a repeller grid biased at various potentials. Results show that after the beam space charge is effectively screened by the secondary plasma in about 3 μs (in agreement with theoretical expectations), a plasma grows across the beamlets with a characteristic time three times longer, and a slight overcompensation of the electric potential is verified as expected in the case of negative ions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Optical absorption and intrinsic recombination in relaxed and strained InAs{sub 1–x}Sb{sub x} alloys for mid-wavelength infrared application

The intrinsic carrier recombination lifetime in relaxed and strained InAs{sub 1−x}Sb{sub x} alloys is investigated using the full-band Green's function theory. By computing the phonon-perturbed electron self-energy of the system, both direct and phonon-assisted indirect Auger and radiative processes are studied as functions of antimony molar fractions, lattice temperatures and applied in-plane biaxial strains. To improve the overall accuracy of the calculation, an empirical pseudopotential band structure for the alloy is also fitted to the measured band extrema and effective masses under different biaxial strains. A set of effective screened potentials valid for all the needed antimony fractions x and biaxial strains ϵ, therefore, is obtained and applied to the calculation. The results showed reduced total Auger recombination rates and enhanced radiative recombination rates in InAsSb alloys at room temperature when a compressive strain is applied. Furthermore, the study on the widely employed mid-wavelength infrared detector material, InAs{sub 0.91}Sb{sub 0.09}, strained by an InAs substrate, demonstrated that much longer minority carrier lifetime can be achieved compared to that in the lattice-matched situation when the lattice temperature is above 200 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Laser-driven high-energy-density deuterium and tritium ions for neutron production in a double-cone configuration

By using two-dimensional particle-in-cell simulations, we investigate laser-driven ion acceleration and compression from a thin DT foil in a double-cone configuration. By using two counterpropagating laser pulses, it is shown that a double-cone structure can effectively guide, focus, and strengthen the incident laser pulses, resulting in the enhanced acceleration and compression of D{sup +} and T{sup +}. Due to the ion Coulomb repulsion and the effective screening from the external laser electric fields, the transverse diffusion of ions is significantly suppressed. Finally, the peak energy density of the compressed ions exceeds 2.73 × 10{sup 16 }J/m{sup 3}, which is about five orders of magnitude higher than the threshold for high energy density physics, 10{sup 11 }J/m{sup 3}. Under this condition, DT fusion reactions are initiated and the neutron production rate per volume is estimated to be as high as 7.473 × 10{sup 35}/m{sup 3} s according to Monte Carlo simulations. It is much higher than that of the traditional large neutron sources, which may facilitate many potential applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electrostatic properties of two-dimensional WSe{sub 2} nanostructures

Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe{sub 2} nanostructures is essential for device application. Here, the interlayer screening effects of WSe{sub 2} nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe{sub 2} nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe{sub 2} nanostructures. Our experimental results have some important implications for improving performance of WSe{sub 2}-based optoelectronic devices through interface or surface engineering.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Emission current from a single micropoint of explosive emission cathode

Explosive emission cathodes (EECs) are widely used due to their large current. There has been much research on the explosive electron emission mechanism demonstrating that a current density of 10{sup 8}–10{sup 9 }A/cm{sup 2} is necessary for a micropoint to explode in several nanoseconds and the micropoint size is in micron-scale according to the observation of the cathode surface. This paper, however, makes an effort to research the current density and the micropoint size in another way which considers the space charge screening effect. Our model demonstrates that the relativistic effect is insignificant for the micropoint emission due to the small size of the micropoint and uncovers that the micron-scale size is an intrinsic demand for the micropoint to reach a space charge limited current density of 10{sup 8}–10{sup 9 }A/cm{sup 2}. Meanwhile, our analysis shows that as the voltage increases, the micropoint emission will turn from a field limited state to a space charge limited state, which makes the steady-state micropoint current density independent of the cathode work function and much less dependent on the electric field and the field enhancement factor than that predicted by the Fowler-Nordheim formula.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Polarization-dependent local conductivity and activation energy in KTiOPO 4

We study the local conductivity properties of KTiOPO4 using conductive atomic force microscopy in ultrahigh vacuum (UHV). We show that domains with opposite orientations have different conductivity values. We research the temperature dependence of the local conductivity and report a difference in the activation energy of 25% between different domains. Moreover, we show that the local conductivity increases with the number of biased-scans. Lastly, it is found that the domain wall conductivity previously observed at ambient conditions vanishes in UHV. Our results are discussed in terms of the screening effects and surface conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

We investigate the impact of high-dose gamma-ray irradiation on the electrical performance of Ga-polar and N-polar GaN-based p-n diodes grown by metalorganic chemical vapor deposition. We compare the current density-voltage (J-V), capacitance-voltage (C-V), and circular transfer length method (CTLM) characteristics of the p-n diodes fabricated on Ga-polar and N-polar orientations before and after irradiation. The relative turn-on voltage increases for the Ga-polar diodes with increasing irradiation dose, while it increases initially and then starts to decrease for the N-polar diodes. The p-contact total resistance increases for Ga-polar and decreases for N-polar samples, which we attribute to the formation of point defects and additional Mg activation after irradiation. The J-V characteristics of most of the tested diodes recovered over time, suggesting the changes in the J-V characteristics are temporary and potentially due to metastable occupancy of traps after irradiation. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements reveal the existence of different types of initial defects and surface electronic states on Ga-polar and N-polar samples. Gallium vacancies (V Ga ) are dominant defects in Ga-polar samples, while nitrogen vacancies (V N ) are dominant in N-polar samples. The presence of a higher concentration of surface states on Ga-polar surfaces compared to N-polar was confirmed by calculating the band bending and the corresponding screening effect due to opposite polarization bound charge and ionized acceptors at the surface. The difference in surface stoichiometry in these two orientations is responsible for the different behavior in electrical characteristics after gamma-ray interactions.

36 MATERIALS SCIENCE↗

Resistive contributions to the stability of DIII-D ITER baseline demonstration discharges

Here, measurements of the plasma response to applied n = 1 perturbations from DIII-D ITER baseline scenario (IBS) demonstration discharges exhibit increasing amplitude prior to disruption inducing mode locking events. Simulations reveal that changes in ideal and resistive stability impact the response in the DIII-D IBS regime, well below the pressure limit of the external kink mode. The dependencies of the response measurements on the plasma normalized internal inductance ℓ i and beta β N are qualitatively consistent with ideal MHD, although in most cases the amplitude of the measurements exceeds predictions, indicating that the experimental discharges are less stable than expected. Resistive MHD simulations of the response show improved compatibility with the measurements, and the closest agreement is obtained by including the experimental plasma rotation in the simulations. Although the input neutral beam torque is near zero, the simulations show that the corresponding level of rotation can lead to nearly complete screening of the pitch-resonant field component at the q = 2 surface. However, the simulation results exhibit a significant weakening of this screening effect at the lowest rotation levels in the data set, concurrent with predictions of elevated response amplitudes that are consistent with measurements. These comparisons with DIII-D data provide a qualitative validation of a linear, resistive MHD response model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Quasiparticle electronic structure of phthalocyanine:TMD interfaces from first-principles GW

Interfaces formed between monolayer transition metal dichalcogenides and (metallo)phthalocyanine molecules are promising in energy applications and provide a platform for studying mixed-dimensional molecule-semiconductor heterostructures in general. An accurate characterization of the frontier energy level alignment at these interfaces is key in the fundamental understanding of the charge transfer dynamics between the two photon absorbers. Here, we employ the first-principles substrate screening GW approach to quantitatively characterize the quasiparticle electronic structure of a series of interfaces: metal-free phthalocyanine (H 2 Pc) adsorbed on monolayer MX 2 (M = Mo, W; X = S, Se) and zinc phthalocyanine (ZnPc) adsorbed on MoX 2 (X = S, Se). Furthermore, we reveal the dielectric screening effect of the commonly used α-quartz (SiO 2 ) substrate on the H 2 Pc:MoS 2 interface using the dielectric embedding GW approach. Our calculations furnish a systematic set of GW results for these interfaces, providing the structure–property relationship across a series of similar systems and benchmarks for future experimental and theoretical studies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Neoclassical transport of tungsten ion bundles in total-f neoclassical gyrokinetic simulations of a whole-volume JET-like plasma

Here, the application of a bundling technique to model the diverse charge states of tungsten impurity species in total-f gyrokinetic simulations is demonstrated. The gyrokinetic bundling method strategically groups tungsten ions of similar charge, optimizing computational efficiency. The initial radial configuration of these bundles and their respective charges are derived from a coronal approximation and the quasi-neutrality of the plasma. A low-density JET H-mode like plasma is simulated using the neoclassical version of XGC across the entire plasma volume, spanning from the magnetic axis to the divertor. An accumulation of tungsten is observed at the pedestal top, as a result of low-Z tungsten ions moving inward from the scrape-off-layer into the core region and high-Z tungsten ions moving outward from the core into the pedestal. This organization of the fluxes cannot be captured by a single tungsten-ion simulation. Large up-down poloidal asymmetries of tungsten form in the pedestal and strongly influence the direction of neoclassical fluxes. The temperature screening effect and its correlation with asymmetries are analyzed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

On the force exerted on a non-spherical asymmetric dust grain from homogeneous, stationary, isotropic, non-magnetized plasma

Whereas the conventional wisdom suggests that the force between non-magnetized homogeneous, stationary, isotropic plasma, and the dust grain is only possible for the case of relative plasma–grain velocity, it is shown that stationary non-spherical asymmetric dust grain immersed in stationary, non-magnetized, isotropic plasma can experience a force caused by the grain–plasma interactions. The component of the force due to scattering of plasma particles in the limit of infinite Debye length is considered analytically. Both the particle scattering and absorption force components are modeled numerically in the limits of infinite and finite Debye length using a newly developed 2D3V Aspherical Particle-in-Cell code. The code simulates interactions of dust grain of selected non-spherical asymmetric shape with plasmas using dust shape conforming coordinates. Here, the simulations confirm the existence of the force on non-spherical asymmetric grain in stationary non-magnetized plasma and show that the plasma screening effects can lead to reversal of the force direction.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Tracking the insulator-to-metal phase transition in VO 2 with few-femtosecond extreme UV transient absorption spectroscopy

We present coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO 2 ) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M 2,3 edge is used to track the insulator-to-metal phase transition in VO 2 . This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase, and measures the phase-transition dynamics in the insulating phase. An understanding of the VO 2 absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V 3+ /d 2 character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott–Hubbard-type mechanism is favored, as the observed timescales and d 2 nature of the vanadium metal centers are inconsistent with a Peierls driving force. In conclusion, the findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials.

36 MATERIALS SCIENCE↗

An in vitro BRAF activation assay elucidates molecular mechanisms driving disassembly of the autoinhibited BRAF state

The RAF kinases (ARAF, BRAF, and CRAF) are essential components of the RAS-ERK signaling pathway, which controls vital cellular processes and is frequently dysregulated in human disease. Notably, mutations that alter BRAF function are prominent drivers of human cancer and certain RASopathy disorders, making BRAF an important target for therapeutic intervention. Despite extensive research, several aspects of BRAF regulation remain unclear. In this study, we developed an in vitro BRAF activation assay using purified autoinhibited BRAF:14-3-3 2 :MEK complexes. Our results show that fully processed, active-state KRAS alone can promote dimer-dependent BRAF activation. Moreover, we found that phosphatidylserine (PS)-containing liposomes synergized with KRAS to promote BRAF activation, achieving activity levels comparable to those observed with BRAF proteins that constitutively dimerize. In contrast, the SMP phosphatase complex had only a minimal effect on BRAF catalytic activity in this system but mediated the dephosphorylation of the negative regulatory pS365 14-3-3 binding site in a manner that was accelerated by the presence of KRAS alone or KRAS and 30% PS liposomes. Finally, we show that inhibitors blocking the BRAF RBD:KRAS interaction were able to suppress the in vitro activation of BRAF, underscoring the critical role of RAS binding in initiating the disassembly of the BRAF autoinhibited state. Thus, this assay provides valuable insights into the steps required for BRAF activation and can serve as an effective screening tool for identifying compounds that may inhibit this process and have therapeutic potential.

BRAF↗

Astrophysical impact of the updated {sup 9}Be(p,α){sup 6}Li and {sup 10}B(p,α){sup 7}Be reaction rates as deduced by THM

The complete understanding of the stellar abundances of lithium, beryllium, and boron represents one of the most interesting open problems in astrophysics. These elements are largely used to probe stellar structure and mixing phenomena in different astrophysical scenarios, such as pre-main-sequence or main-sequence stars. Their different fragility against (p,α) burning reactions allows one to investigate different depths of the stellar interior. Such fusion mechanisms are triggered at temperatures between T ≈ (2–5) × 10{sup 6} K, thus defining a corresponding Gamow energy between ≈ 3–10 keV, where S(E)-factor measurements need to be performed to get reliable reaction rate evaluations. The Trojan Horse Method is a well defined procedure to measure cross sections at Gamow energies overcoming the uncertainties due to low-energy S(E)-factor extrapolation as well as electron screening effects. Taking advantage of the THM measure of the {sup 9}Be(p,α){sup 6}Li and {sup 10}B(p,α){sup 7}Be cross sections, the corresponding reaction rates have been calculated and compared with the evaluations by the NACRE collaboration, widely used in the literature. The impact on surface abundances of the updated {sup 9}Be and {sup 10}B (p,α) burning rates is discussed for pre-MS stars.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Trivalent ion overcharging on electrified graphene

We report the structure of the electrical double layer (EDL) formed near graphene in aqueous environments strongly impacts its performance for a plethora of applications, including capacitive deionization. In particular, adsorption and organization of multivalent counterions near the graphene interface can promote nonclassical behaviors of EDL including overcharging followed by co-ion adsorption. In this paper, we characterize the EDL formed near an electrified graphene interface in dilute aqueous YCl 3 solution using in situ high resolution x-ray reflectivity (also known as crystal truncation rod) and resonant anomalous x-ray reflectivity (RAXR). These interface-specific techniques reveal the electron density profiles with molecular-scale resolution. We find that yttrium ions (Y 3+ ) readily adsorb to the negatively charged graphene surface to form an extended ion profile. This ion distribution resembles a classical diffuse layer but with a significantly high ion coverage, i.e., 1 Y 3+ per 11.4 ± 1.6 Å 2 , compared to the value calculated from the capacitance measured by cyclic voltammetry (1 Y 3+ per ~240 Å 2 ). Such overcharging can be explained by co-adsorption of chloride that effectively screens the excess positive charge. The adsorbed Y 3+ profile also shows a molecular-scale gap (≥ 5 Å) from the top graphene surfaces, which is attributed to the presence of intervening water molecules between the adsorbents and adsorbates as well as the lack of inner-sphere surface complexation on chemically inert graphene. We also demonstrate controlled adsorption by varying the applied potential and reveal consistent Y 3+ ion position with respect to the surface and increasing cation coverage with increasing the magnitude of the negative potential. This is the first experimental description of a model graphene-aqueous system with controlled potential and provides important insights into the application of graphene-based systems for enhanced and selective ion separations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron capture of superheavy nuclei with realistic lepton wave functions

The superheavy nuclei push the periodic table of the elements and the chart of the nuclides to their limits, providing a unique laboratory for studies of the electron-nucleus interactions. The most important weak decay mode in known superheavy nuclei is electron capture (EC). In the standard calculations of EC, the lepton wave functions are usually considered in the lowest-order approximation. In this work, we investigate the sensitivity of EC rates on the choice of the electron wave functions by (i) assuming the single-particle approximation for the electron wave functions, and (ii) carrying out Dirac-Hartree-Fock (DHF) calculations. The nuclear response is generated based on the state-of-the-art quasiparticle random phase approximation employing relativistic nuclear energy density functional theory. Here, we show that using the improved lepton wave functions reduces the EC rates up to 40% in the superheavy nucleus oganesson (𝑍=118). Interestingly, because of screening effects, the difference between the EC rates obtained with the DHF and single-particle calculations is fairly small.

Atomic orbital↗

Dynamical cluster approximation study of electron localization in the extended Hubbard model

We perform a detailed study of the phase transitions and mechanisms of electron localization in the extended Hubbard model using the dynamical cluster approximation on a 2×2 cluster. We explore the interplay of charge order and Mott physics. We find that a nearest-neighbor Coulomb interaction V causes “screening” effects close to the Mott phase transition, pushing the phase boundary to larger values of U. We also demonstrate the different effects of V on correlations in metallic and insulating regimes, and document the different correlation aspects of charge order and Mott states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗