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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Design of BLDC Motor Diagnostic Device Based on Surge Test for Phase to Ground Fault

BLDC motor is essential in the industrial world, especially it been used for an electric vehicle. The benefit of using BLDC motor is that it has high rate efficiency and low mechanical losses. However, to know the isolation condition of winding and increase reliability, it needs to be tested. With the implementation of surge test based fault detection device of BLDC motor, the condition of BLDC motor can be monitored and maintained according to analysis of its condition. The surge test method used because it is sensitive in detecting the initial damage in the isolation failure process on stator winding. A surge voltage is generated from the Cockroft-Walton and switching circuit with capacitors. The result is analyzed using Error Area Ratio (EAR). The test result shows that the higher the value of resistance and inductance, the smaller the frequency of the surge wave. When the BLDC motor in a parallel short circuit condition, the threshold value of the EAR test-reff has a minimum value of 5.28%, an average of 13.52%, and a maximum of 28.55%.

BLDC motor↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
DOE OSTI2020

Acousto-optic modulators of high-power laser radiation on the basis of KGW and KYW crystals

Different modifications of acousto-optic modulators (AOMs) based on KG(WO{sub 4}){sub 2} (KGW) and KY(WO{sub 4}){sub 2} (KYW) crystals, designed for Q switching of high-power pulsed lasers, is developed and investigated. It is shown that AOMs based on these crystals are universal, can be combined with different lasers in the wavelength range of 1 – 3 μm, and have a high radiation resistance in the absence of antireflection coatings and light input at Brewster’s angle. The operation efficiency of KGW-based AOMs is experimentally demonstrated. Solid-state lasers based on Cr : Er : YSGG (λ = 2.78 μm), Cr : Yb : Ho : YSGG (λ = 2.87 μm), Cr : Tm : Ho : YSGG (λ = 2.09 μm), and Nd : YAG (λ = 1.064 μm) crystals with active acousto-optic Q switching, operating in the repetitively pulsed regime with a high beam quality and without surface destruction, are investigated. Lasing pulses (30 – 60)-ns long with energy up to 32 mJ at a repetition rate from 1 to 1000 Hz are obtained. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Thermal diode and thermal switch for bi-directional heat transfer in building envelopes

The present disclosure relates to a directional heat transfer using thermal control devices, including a dual phase change thermal diode and an active contact-based thermal switch. The thermal diode includes a positive temperature coefficient switching material and a negative temperature coefficient switching material arranged in series. The thermal switch includes two thermally conducting surfaces which may be moved to contact (i.e., having a distance between them of substantially zero) creating minimal thermal contact resistance. Both thermal control devices may be used to control heat flow into and/or out of a building.

Kishore, Ravi Anant↗
DOE OSTI2026

PowerMappeR: Power-Optimized Mapping of SNNs onto ReRAM Crossbars coupled via Packet-Switched NoCs

Many recent efforts in developing hardware-accelerated spiking neural networks (SNNs) are characterized by deep co-design between algorithms, architectures, and devices. Architectural advances overcome device constraints by coupling together many small resistive-RAM (ReRAM) crossbars via a network-on-chip (NoC) for neuromorphic component operation. Concurrently, improved SNN training methods increase accuracy and structural sparsity in networks despite growing problem sizes. Finally, compilers leverage these attributes to minimize area and inter-crossbar communication while mapping large SNNs to sophisticated architectures. However, for compiler-driven co-design to realize increasingly complex and profitable optimizations, a compile-time view of power consumption is critical. We present PowerMappeR to express and optimize over mapping-, architecture-, and device-specific power consumption information. By modeling the dynamic power of well-established components, we develop an integer linear programming (ILP)-based, encoding-agnostic, parametric power estimation model. Using this model, we demonstrate practical improvements in area and inter-crossbar communication by 0%–9.5% and 1.4%–5.1%, respectively. We also limit hotspot formation during optimization, achieving comparable or better results in targeted metrics with up to 96.4%–97.1% restriction of hotspot magnitude. Finally, we introduce profile-guided formulations to reduce worst-case and expected-case hotspot magnitude by 40.7%–69.5% and 40.6%–56.3%, respectively. Optimizing worst-case hotspot magnitude incidentally improves expected-case magnitude by 10.85%–33.45%. Reciprocally, optimizing expected-case magnitude incidentally improves worst-case magnitude by 4.33%–39.87%. Validation against hardware simulators confirms that PowerMappeR can decrease dynamic power consumption by 12.6%–27.3%.

Pohl, Devin [ORNL] (ORCID:0009000040149027)↗
DOE OSTI2022

Continuously Doping BiM 2 Sr 2 CaCu 2 O 8+δ into Electron-Doped Superconductor by CaH 2 Annealing Method

As a typical hole-doped cuprate superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) carrier doping is mostly determined by its oxygen content. Traditional doping methods can regulate its doping level within the range of hole doping. Here we report the first application of CaH 2 annealing method in regulating the doping level of Bi2212. By continuously controlling the anneal time, a series of differently doped samples can be obtained. The combined experimental results of x-ray diffraction, scanning transmission electron microscopy, resistance and Hall measurements demonstrate that the CaH 2 induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range, even switching from hole doping to electron doping. Further, we also found evidence of a low-T c superconducting phase in the electron doping side.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Thermal Optimization and Experimental Demonstration of a Silicon Carbide, Half-Bridge Power Module

This paper describes modeling and experimental work to design and demonstrate a silicon carbide (SiC), single-side-cooled power module. Two SiC metal-oxide-semiconductor field-effect transistors (MOSFET) were used for each switch position and packaged on a metalized ceramic substrate. Thermal modeling was first conducted to optimize the module packaging to minimize junction-to-fluid thermal resistance and device temperature variations. This procedure identified the optimal device placement and baseplate thickness to maximize thermal performance. A heat exchanger - incorporating impinging jets of water-ethylene glycol - was designed to cool the module's baseplate to minimize thermal resistance and pumping power. The heat exchanger used relatively low fluid velocities (<1.5 m/s) to minimize erosion-corrosion effects and relatively large fluid channel sizes (>=1 mm) to prevent clogging. The power module concept was fabricated, and experiments were conducted to measure its thermal performance. Direct current was used to power the module devices, and junction temperatures were measured via device temperature-sensitive parameters. The experimental results were found to be in good agreement with model predictions (within 2%) and yielded junction-to-fluid thermal resistance values as low as about 15 mm2 K/W at relatively low pumping power values. The results demonstrate the improved performance associated with jet impingement cooling and represent an improvement over existing channel-flow-type cold plates, which can enable improvements to power density and reliability.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Discovery of BBO-8520, a First-In-Class Direct and Covalent Dual Inhibitor of GTP-Bound (ON) and GDP-Bound (OFF) KRASG12C

Abstract Approved inhibitors of KRASG12C prevent oncogenic activation by sequestering the inactive, GDP-bound (OFF) form rather than directly binding and inhibiting the active, GTP-bound (ON) form. This approach provides no direct target coverage of the active protein. Expectedly, adaptive resistance to KRASG12C (OFF)-only inhibitors is observed in association with increased expression and activity of KRASG12C(ON). To provide optimal KRASG12C target coverage, we have developed BBO-8520, a first-in-class, direct dual inhibitor of KRASG12C(ON) and (OFF) forms. BBO-8520 binds in the Switch-II/Helix3 pocket, covalently modifies the target cysteine, and disables effector binding to KRASG12C(ON). BBO-8520 exhibits potent signaling inhibition in growth factor–activated states, in which current (OFF)-only inhibitors demonstrate little measurable activity. In vivo, BBO-8520 demonstrates rapid target engagement and inhibition of signaling, resulting in durable tumor regression in multiple models, including those resistant to KRASG12C(OFF)-only inhibitors. BBO-8520 is in phase 1 clinical trials in patients with KRASG12C non–small cell lung cancer. Significance: BBO-8520 is a first-in-class direct, small molecule covalent dual inhibitor that engages KRASG12C in the active (ON) and inactive (OFF) conformations. BBO-8520 represents a novel mechanism of action that allows for optimal target coverage and delays the emergence of adaptive resistance seen with (OFF)-only inhibitors in the clinic. See related commentary by Zhou and Westover, p. 455

Oncology↗
DOE OSTI2026

Single-Phase to Split-Phase Inverters with Advanced Grid Support Functions for Grid-Interactive Applications

This work presents a cost-effective single-phase to split-phase inverter with a reduced switch count, achieving grid interactive performance while maintaining operational efficiency. The proposed system integrates an Andronov-Hopf oscillator based secondary controller, which inherently embeds a nonlinear resistive droop architecture, ensuring rapid dynamic response. A Lyapunov energy function-based primary control enhances transient stability and regulation, while an internal model-based point of common coupling voltage estimation enables cost optimization without additional sensors. Equipped with advanced grid support functionalities, the inverter facilitates seamless distribution system operation with enhanced robustness. The effectiveness of the proposed architecture and control strategy is validated through MATLAB/Simulink and PLECS simulations, demonstrating its feasibility for high-performance grid-supportive applications.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Advanced Coating Compositions and Microstructures to Improve Uptime and Operational Flexibility in Cyclic, Low-Load Thermal Utility Plants

GE, the University of Tennessee, and Oak Ridge National Laboratory collaborated from 2020 to 2023 developing two key technologies for improving the viability of fuel switching and load following in thermal utility plants: a) cost-effective weld overlay compositions for boiler tubing b) cathodic arc coatings that deliver improvements in both erosion resistance and oxidation resistance in high temperature steam for HP turbine blades The team worked through a robust, logical project map to de-risk these two technologies and advance them from TRL 3 to TRL 6. For the cost-effective weld overlay, the team developed a ferritic filler material which was fabricated at a vendor for 18% the average market cost of Inconel 625 wire, had a corrosion rate 3x lower in conditions simulating a biomass-fired superheater and 10x lower in conditions simulating a coal-fired superheater, and was fabricated into prototype overlaid tubing that passed ASME requirements including transverse bending, dye penetrant inspection, and ASTM G-76 evaluation. For the cathodic arc coatings applied to steam turbine blades, the team developed a novel composition that was successfully transferred to a qualified vendor. The vendor was able to produce coated prototypes with 4x the as-deposited erosion resistance and 10.4x the post-steam-exposure erosion resistance of the TiN coating the vendor currently applies on GE steam turbine components, without significantly increasing process cost. These coated prototypes also passed a GE inspection and showed favorable performance in high temperature erosion, nanoindentation, sliding wear, scratch adhesion, and high cycle fatigue testing. If successfully deployed by GE, it is anticipated that the technologies will enable the following: • 25%-50% increase in time between outages for both boilers and HP turbines. • 50% decrease in cost for weld overlay on a per foot basis relative to todays NiCr alloys. • Adequate oxidation resistance and erosion for HP turbine inlet steam at >620°C and >220 bar. • No need for changes in component supply chain or any notable Capital Expenditures. 5 Decreasing component cost, increasing performance, and extending time between outages represent direct value propositions to GE and their customers. For the American consumer, these objectives translate into increased grid reliability (fewer unexpected outages), decreased Levelized Cost of Electricity, and improved environmental health (low-loading/load following to accelerate penetration of renewables). The results also have implications for wear resistant tooling, wire arc additive manufacturing, more durable components for syngas cleanup, and deployment of more efficient thermochemical pathways for carbon negative fuel production

09 BIOMASS FUELS↗
DOE OSTI2020

Current-Induced Reversal of Anomalous Hall Conductance in Twisted Bilayer Graphene

It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the fourfold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. In this work, we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes the redistribution of electron occupation in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical current, the original occupied and empty bands can be swapped, resulting in the switching of VP and topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)

Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Molecular Dynamics Free Energy Simulations Reveal the Mechanism for the Antiviral Resistance of the M66I HIV-1 Capsid Mutation

While drug resistance mutations can often be attributed to the loss of direct or solvent-mediated protein−ligand interactions in the drug-mutant complex, in this study we show that a resistance mutation for the picomolar HIV-1 capsid (CA)-targeting antiviral (GS-6207) is mainly due to the free energy cost of the drug-induced protein side chain reorganization in the mutant protein. Among several mutations, M66I causes the most suppression of the GS-6207 antiviral activity (up to ~84,000-fold), and only 83- and 68-fold reductions for PF74 and ZW-1261, respectively. To understand the molecular basis of this drug resistance, we conducted molecular dynamics free energy simulations to study the structures, energetics, and conformational free energy landscapes involved in the inhibitors binding at the interface of two CA monomers. To minimize the protein−ligand steric clash, the I66 side chain in the M66I−GS-6207 complex switches to a higher free energy conformation from the one adopted in the apo M66I. In contrast, the binding of GS-6207 to the wild-type CA does not lead to any significant M66 conformational change. Based on an analysis that decomposes the absolute binding free energy into contributions from two receptor conformational states, it appears that it is the free energy cost of side chain reorganization rather than the reduced protein−ligand interaction that is largely responsible for the drug resistance against GS-6207.

Sun, Qinfang (ORCID:0000000173621543)↗
DOE OSTI2022

Quantification of complex protective surface oxide layer formed during plasma jet exposure of multicomponent ultra-high temperature carbides

Multicomponent ultra-high temperature ceramics (MC-UHTCs) has garnered attention due to their improved thermo-mechanical and oxidation properties. MC-UHTC was progressively formed by adding a UHTC component at each step, producing binary, ternary and quaternary UHTC systems, processed by spark plasma sintering (SPS). Here, we investigate the role of multi-elements and thermochemical stability of the surface oxide layer formed during plasma arc jet exposure (T > 2500 °C) of MC-UHTCs using core-level X-ray photoelectron spectroscopy (XPS) correlated with the structural investigation. The results indicate that adding a UHTC component improves oxidation resistance due to the assemblage of refractory phases forming complex mixed oxides via preferential oxidation. XPS spectra of Ta4f, Nb3d, Ti1p, and Hf4f showed that the nature of the chemical bonds switched from metal carbides to metal oxides (metal oxy-carbides) in the binary system with retained metal carbides in ternary and quaternary UHTCs. The absence of a metal carbide peak in the high-resolution C1s scan of the binary system also supports this finding. The principal complex mixed oxide phases emanate in the exiguous oxidation of MC-UHTCs are quantified using Rietveld analysis. Overall, this study suggests that MC-UHTC is a promising material for possible application in thermal protection systems (TPS).

36 MATERIALS SCIENCE↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2021

The role of non-standard translation in Candida albicans pathogenesis

ABSTRACT Candida albicans typically resides in the human gastrointestinal tract and mucosal membranes as a commensal organism. To adapt and cope with the host immune system, it has evolved a variety of mechanisms of adaptation such as stress-induced mutagenesis and epigenetic regulation. Niche-specific patterns of gene expression also allow the fungus to fine-tune its response to specific microenvironments in the host and switch from harmless commensal to invasive pathogen. Proteome plasticity produced by CUG ambiguity, on the other hand is emerging as a new layer of complexity in C. albicans adaptation, pathogenesis, and drug resistance. Such proteome plasticity is the result of a genetic code alteration where the leucine CUG codon is translated mainly as serine (97%), but maintains some level of leucine (3%) assignment. In this review, we dissect the link between C. albicans non-standard CUG translation, proteome plasticity, host adaptation and pathogenesis. We discuss published work showing how this pathogen uses the fidelity of protein synthesis to spawn novel virulence traits.

Bezerra, Ana Rita (ORCID:0000000346131711)↗