Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Resistive switching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
DOE OSTI2021

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.

Silicon Carbide, Monolithic, Bidirectional, FourQu↗
DOE OSTI2023

Amorphous Metal Ribbon (AMR) and Metal Amorphous Nanocomposite (MANC) Materials Enabled High Power Density Vehicle Motor Applications (Final Technical Report)

A collaborative team from Carnegie Mellon Univ. (CMU), North Carolina State Univ. (NCSU) and Metglas, South Carolina have studied new high speed motors (HSMs) with high-power density for traction motor applications. These are enabled by hybrid designs, including Flux Switching with Permanent Magnets (FSWPM) motors, exploiting permanent magnets without heavy rare earths (RE-lean) and high induction/high resistivity soft magnetic materials that allow for high switching frequencies needed to increase power densities. Team members include Michael E. McHenry, Prof. Materials Science & Eng., CMU, with > 30 years experience in magnetic materials development; Subashish Bhattacharya, Prof. Electrical Eng. and Freedom Center Director at NCSU with > 30 years experience in development of power electronic components and systems and Eric Theisen, Director of Research at Metglas, the only US located supplier of AMR and MANC materials. The team offers novel axial motor architectures exploiting soft magnetic materials (SMMs) that switch with low loss at high frequencies and heavy rare earth free permanent magnets that address materials criticality issues, supply chain risks, and high costs for traction motors. Axial-flux permanent magnet motors (APFM), offer efficiency improvements reducing rotor losses and also significantly higher power density. Axial-flux construction requires less core material, high torque-to-weight ratio. Since AFPM machines have thin magnets, they are smaller than radial flux motors making them attractive in space-limited applications. Noise and vibration are less and planar air gaps are easily adjusted. Flexibility in air-gap direction allows many topologies.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Effect of delta tabs on mixing and axis switching in jets from asymmetric nozzles

The effect of delta tabs on mixing and the phenomenon of axis switching in free air jets from various asymmetric nozzles was studied experimentally. Flow visualization and Pitot probe surveys were carried out with a set of small nozzles (D = 1.47 cm) at a jet Mach number, Mj = 1.63. Hot wire measurements for streamwise vorticity were carried out with larger nozzles (D = 6.35 cm) at Mj = 0.31. Jet mixing with the asymmetric nozzles, as indicated by the mass fluxes downstream, was found to be higher than that produced by a circular nozzle. The circular nozzle with four delta tabs, however, produced fluxes much higher than that produced by a asymmetric nozzles themselves or by most of the tab configurations tried with them. Even higher fluxes could be obtained with only a few cases, e.g., with 3:1 rectangular nozzle with two large delta tabs placed on the narrow edges. In this case, the jet 'fanned out' at a large angle after going through one axis switch. The axis switching could be either stopped or augmented with suitable choice of the tab configurations. Two mechanisms are identified governing the phenomenon. One, as described in Ref. 12 and referred to here as the omega(sub Theta)-induced dynamics, is due to differential induced velocities of different segments of a rolled up azimuthal vortical structure. The other is the omega(sub x)-induced dynamics due to the induced velocities of streamwise vortex pairs in the flow. While the former dynamics are responsible for rapid axis switching in periodically forced jets, the effect of the tabs is governed mainly by the latter. It is inferred that both dynamics are active in a natural asymmetric jet issuing from a nozzle having an upstream contraction. The tendency for axis switching caused by the omega(sub Theta)-induced dynamics is resisted by the omega(sub x)-induced dynamics, leading to a delayed or no switch over in that case. In jets from orifices and in screeching jets, the omega(sub Theta)-induced dynamics dominate causing a faster switch over.

Zaman, K. B. M. Q.↗
NASA NTRS2005

High-Efficiency Microwave Power Amplifier

A high-efficiency power amplifier that operates in the S band (frequencies of the order of a few gigahertz) utilizes transistors operating under class-D bias and excitation conditions. Class-D operation has been utilized at lower frequencies, but, until now, has not been exploited in the S band. Nominally, in class D operation, a transistor is switched rapidly between "on" and "off" states so that at any given instant, it sustains either high current or high voltage, but not both at the same time. In the ideal case of zero "on" resistance, infinite "off" resistance, zero inductance and capacitance, and perfect switching, the output signal would be a perfect square wave. Relative to the traditional classes A, B, and C of amplifier operation, class D offers the potential to achieve greater power efficiency. In addition, relative to class-A amplifiers, class-D amplifiers are less likely to go into oscillation. In order to design this amplifier, it was necessary to derive mathematical models of microwave power transistors for incorporation into a larger mathematical model for computational simulation of the operation of a class-D microwave amplifier. The design incorporates state-of-the-art switching techniques applicable only in the microwave frequency range. Another major novel feature is a transmission-line power splitter/combiner designed with the help of phasing techniques to enable an approximation of a square-wave signal (which is inherently a wideband signal) to propagate through what would, if designed in a more traditional manner, behave as a more severely band-limited device (see figure). The amplifier includes an input, a driver, and a final stage. Each stage contains a pair of GaAs-based field-effect transistors biased in class D. The input signal can range from -10 to +10 dBm into a 50-ohm load. The table summarizes the performances of the three stages

Sims, Williams H.↗
DOE OSTI2020

A 150-kW 99% Efficient All-Silicon-Carbide Triple-Active-Bridge Converter for Solar-Plus-Storage Systems

Solar-plus-storage systems could effectively mitigate the uncertainties of the photovoltaic (PV) generation and improve system reliability by adding an integrated battery energy storage system. As a three-port bidirectional isolated dc–dc converter with soft-switching capability, the triple-active-bridge (TAB) converter inherently matches the requirements of the solar-plus-storage system. However, challenges still remain in the TAB converter design to further improve system efficiency. In this article, the detailed design, implementation, and demonstration for a silicon carbide (SiC) 150-kW TAB converter are presented. Starting from a brief review of the TAB converter, the modulation scheme, power characteristics, and soft-switching region are analyzed. Then, the detailed design of the H-bridge converter building block is given. Here, to improve the system efficiency, a comprehensive characterization of the SiC gate driver with various external gate resistances is performed to address tradeoffs between switching loss and voltage overshoot during transients, as well as the thermal performance of the H-bridge building block. In addition, the design and characterization of the 20-kHz three-port transformer are also given. Comprehensive experimental studies are conducted on a full-power prototype to verify the proposed design. With a measured 99.1% peak efficiency, the proposed TAB converter can fulfill the requirements for solar-plus-storage applications.

14 SOLAR ENERGY↗
DOE OSTI2020

First-principles study and experimental characterization of metal incorporation in germanium telluride

Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Here, since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe (Ge 0.5–x M x Te 0.5 ) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of Ge 0.5–x M x Te 0.5 films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the Ge 0.5–x M x Te 0.5 systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2024

0D, 1D, 2D, and 3D simulations of an idealized coaxial impedance-matched Marx generator

We have conducted 0D, 1D, 2D, and 3D simulations of an idealized coaxial impedance-matched Marx generator (IMG) []. The 0D calculations were conducted with a four-element circuit model; the 1D, 2D, and 3D calculations were conducted with highly resolved, fully electromagnetic representations. The IMG consists of 30 stages distributed axially and connected electrically in series. Each stage is powered by two bricks separated by 180° and connected electrically in parallel. Each brick comprises two opposite-polarity capacitors in series with a single switch. The bricks drive an internal impedance-matched coaxial transmission line terminated by a resistive load. The simulations neglect effects due to the switch-triggering circuit, the capacitor-charging circuit, external conducting boundaries, and reactive components of the load. We find dimensionality does not significantly affect the electrical power delivered by the IMG to its load: peak load powers estimated by the 0D, 1D, 2D, and 3D simulations agree to within 1%. The 3D calculations demonstrate that electromagnetic power radiated by the bricks, and axial gaps between stages, reduces the peak load power by less than ∼ 1 % . Each simulation assumes the load impedance is 34% above that at which the load power is maximized. Operating an IMG with such an overmatched load offers several advantages while decreasing the peak load power by only 2%. The 0D, 1D, 2D, and 3D models outlined herein could be adapted to assess computationally competing IMG designs, and conduct a variety of numerical IMG experiments, an IMG is constructed. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS↗
NASA NTRS1966

High voltage potential divider calibrated by simple device

Resistance bridge device incorporates a potentiometer, switches, and a null detector to calibrate high potential dividers under high voltage operation conditions. Calibration can be performed with this device in less than 1 minute at an accuracy of 0.001 percent.

Lewis, R. N.↗
NASA NTRS1979

The communications industry's requirements and interests

Of interest to the communications industry are the amplitude, waveshape, duration and frequency of lightning-originated voltage surges and transients on the communications network, including the distribution system and AC power supply circuits. The cloud-to-ground lightning discharge and its characteristics are thought to be most meaningful. Of specific interest are peak current, waveshape, number of flashes, strokes per flash, and zone of influence. Accurate and meaningful lightning data at the local level (telephone district office) is necessary for a decision on the appropriate protection level. In addition to lightning, the protection engineer must consider other factors such as: AC induction, switching surges, ground potential rise, soil resistivity, bonding and grounding techniques, shielding and isolation, and exposure of the telephone loop.

Wanaselja, O.↗
NASA NTRS1993

Lock-up failure of a four-bar linkage deployment mechanism

A successful failure investigation of a four-bar linkage deployment mechanism has been performed. Possible failure causes such as the mismatch of material coefficient of thermal expansion (CTE), excessive hinge friction, limit switch interference, and thermal gradient induced resistive preload were investigated and are discussed. The final conclusions and corrective actions taken are described. Finally, valuable lessons learned during the investigation are discussed.

Zinn, Michael↗
DOE OSTI2021

The role of memory in non-genetic inheritance and its impact on cancer treatment resistance

Intra-tumour heterogeneity is a leading cause of treatment failure and disease progression in cancer. While genetic mutations have long been accepted as a primary mechanism of generating this heterogeneity, the role of phenotypic plasticity is becoming increasingly apparent as a driver of intra-tumour heterogeneity. Consequently, understanding the role of this plasticity in treatment resistance and failure is a key component of improving cancer therapy. We develop a mathematical model of stochastic phenotype switching that tracks the evolution of drug-sensitive and drug-tolerant subpopulations to clarify the role of phenotype switching on population growth rates and tumour persistence. By including cytotoxic therapy in the model, we show that, depending on the strategy of the drug-tolerant subpopulation, stochastic phenotype switching can lead to either transient or permanent drug resistance. We study the role of phenotypic heterogeneity in a drug-resistant, genetically homogeneous population of non-small cell lung cancer cells to derive a rational treatment schedule that drives population extinction and avoids competitive release of the drug-tolerant sub-population. This model-informed therapeutic schedule results in increased treatment efficacy when compared against periodic therapy, and, most importantly, sustained tumour decay without the development of resistance.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1979

Development and fabrication of low ON resistance high current vertical VMOS power FETs

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Kay, S.↗
NASA NTRS1967

Rugged switch responds to minute pressure differentials

Pressure responsive switching device exhibits high sensitivity but is extremely rugged and resistant to large amplitude shock and velocity loading. This snap-action, single pole-double throw switch operates over a wide temperature range.

Friend, L. C.↗
DOE OSTI2022

Filament Formation in TaO x Thin Films for Memristor Device Application: Modeling Electron Energy Loss Spectra and Electron Transport

Abstract Although understanding filament formation in oxide‐based memristive devices by theory has emerged, there are still fundamental unanswered questions. Importantly, for practical application of thin films the material in its amorphous state is to be considered, but mostly lacking so far, and details on sub‐stoichiometry are also scarce. To gain insight into the optical and electronic properties of sub‐stoichiometric amorphous tantalum oxide (TaO x ), the electron energy loss spectrum (EELS) of model systems is characterized theoretically and electron transport characteristics are analyzed in detail. Calculated blue‐shifts by increasing sub‐stoichiometry explained the measurements, potentially suggesting estimation of oxygen vacancy concentrations through EEL spectra. Electron transport results based on TaO x material models validated by EELS measurements show that oxygen vacancy filamentary paths are initiated at low bias upon increasing sub‐stoichiometry yet noting an interplay with the local amorphous structure. Contact resistances at interfaces of the TaO x switching layer and a tantalum scavenging layer or titanium nitride electrode are quantified, indicating the possibility for either oxygen vacancy‐ or metal cluster‐based conduction mechanisms at the interface. The computational work, combined with experimental characterization for validation, provides a basis for investigating effects of sub‐stoichiometry on filament formation in TaO x thin film memristive devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Boost of the Bio-memristor Performance for Artificial Electronic Synapses by Surface Reconstruction

Biomaterial-based memristors (bio-memristors) are often adopted to emulate biological synapse functions and applied to construct neural computing networks in brain-inspired chip systems. However, the randomness of conductive filament formation in bio-memristors inhibits their switching performance by causing the dispersion of the device-switching parameters. In this case, a facile porous silk fibroin (p-SF) memristor was obtained through a protein surface reconstruction strategy, in which the size of the hole can be adjusted by the density of hybrid nanoseeds. Here, the porous SF memristors exhibit greatly enhanced electrical characteristics, including uniform I-V cycles, centralized distribution of the switching voltages, and both high and low resistances, compared to devices without pores. The results of three-dimensional (3D) simulations based on classical density functional theory (cDFT) suggest that the reconstructed pores in the SF layers guide the formation and fracture of Ag filaments under an electric field and enhance the overall conductivity by separating Ag + ion and electron diffusion pathways. Ag + ions are predicted to preferentially diffuse through pores, whereas electrons diffuse through the SF network. Interestingly, the device conductance can be bidirectionally modulated gradually by positive and negative voltages, can faithfully simulate short-term and long-term plasticity, and can even realize the triplet-spike-timing-dependent plasticity (triplet-STDP) rule, which can be used for pattern recognition in biological systems. The simulation results reveal that a memristor network of this type has an accuracy of ~95.78% in memory learning and the capability of pattern learning. This work provides a facile technology route to improve the performance of bionic-material memristors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Remote surface optical phonon scattering in ferroelectric Ba 0.6 Sr 0.4 TiO 3 gated graphene

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba 0.6 Sr 0.4 TiO 3 films, with field effect mobility up to 23 000 cm 2 V –1 s –1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba 0.6 Sr 0.4 TiO 3 , from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be controlled by read and write voltages. The individual FTJs are measured to have a tunneling electroresistance of 10 during the read state without significant filament conduction formation and reasonable ferroelectric performance. Endurance and remanent polarizations of up to 10 5 cycles and 20 μC/cm 2 , respectively, are measured and are shown to be dependent on the cycling voltage. Electrical measurements demonstrate how magnitude of the write pulse can modulate the high state resistance and the read pulse influences both resistance values as well as separation of resistance states. Then, by using two opposite switching FTJ devices in series, a programmable nonvolatile resistor divider is demonstrated. Measurements of these two FTJ unit memory cells show wide applicability to a BEOL microfabrication process for a re-readable, rewritable, and nonvolatile memory cell.

42 ENGINEERING↗