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Results for “Radiation effects on electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Radio astronomy

The origins, generation, detection, and interpretation of radio signals are discussed for signals with an assumed random polarization. After defining the basic parameters, the discussion moves to such topics as synchrotron radiation, plasma effects, changes in the electron energy spectrum in the radiating regions, energy loss to ionization, bremsstrahlung, radio astronomical observations of high-energy particles, emission by energetic particles, observation of supernova remnants and pulsars, galactic background continuum radiation, and others.

Alexander, J.↗
NASA NTRS1995

Screening Effects on Nonrelativistic Bremsstrahlung in the Scattering of Electrons by Neutral Atoms

Atomic screening effects on nonrelativistic electron-atom bremsstrahlung radiation are investigated using a simple analytic solution of the Thomas-Fermi model for many-electron atoms. The Born approximation is assumed for the initial and final states of the projectile electron. The results show that the screening effect is important in the soft radiation region and is decreasing with increasing radiation. These results help provide correct information about the behavior of bound electrons in the target atom in bremsstrahlung processes.

Jung, Young-Dae↗
NASA NTRS2015

Compendium of Current Single Event Effects for Candidate Spacecraft Electronics for NASA

NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.

spacecraft electronics↗
NASA NTRS1984

Development of a radiation-hard photomultiplier tube

In a radiation-hard photomultiplier tube (PMT) such as has been developed for stabilization of the Galileo spacecraft as it goes through the Jovian high energy radiation belts, the primary effects of high energy electron and proton radiation that must be resisted are the production of fluorescence and Cerenkov emission. The present PMT envelope is ceramic rather than glass, and employs a special, electron-focusing design which will collect, accelerate and amplify electrons only from desired photocathode areas. Tests in a Co-60 radiation facility have shown that the radiation-hard PMT produces less than 2.5 percent of the radiation noise of a standard PMT.

Birnbaum, M. M.↗
NASA NTRS2006

Radiation Challenges for Electronics in the Vision for Space Exploration

The slides present a brief snapshot discussing electronics and exploration-related challenges. Radiation effects have been the prime target, however, electronic parts reliability issues must also be considered. Modern electronics are designed with a 3-5 year lifetime. Upscreening does not improve reliability, merely determines inherent levels. Testing costs are driven by device complexity; they increase tester complexity, beam requirements, and facility choices. Commercial devices may improve performance, but are not cost panaceas. There is need for a more cost-effective access to high energy heavy ion facilities such as NSCL and NSRL. Costs for capable test equipment can run more than $1M for full testing.

LaBel, Kenneth A.↗
NASA NTRS1995

The Impact on Space Radiation Requirements and Effects on ASIMS

The evolution of highly miniaturized electronic and mechanical systems will be accompanied by new problems and issues regarding the radiation response of these systems in the space environment. In this paper we discuss some of the more prominent radiation problems brought about by miniaturization. For example, autonomous micro-spacecraft will require large amounts of high density memory, most likely in the form of stacked, multichip modules of DRAM's, that must tolerate the radiation environment. However, advanced DRAM's (16 to 256 Mbit) are quite susceptible to radiation, particularly single event effects, and even exhibit new radiation phenomena that were not a problem for older, less dense memory chips. Another important trend in micro-spacecraft electronics is toward the use of low-voltage microelectronic systems that consume less power. However, the reduction in operating voltage also caries with it an increased susceptibility to radiation. In the case of application specific integrated microcircuits (ASIM's), advanced devices of this type, such as high density field programmable gate arrays (FPGA's) exhibit new single event effects (SEE), such as single particle reprogramming of anti-fuse links. New advanced bipolar circuits have been shown recently to degrade more rapidly in the low dose rate space environment than in the typical laboratory total dose radiation test used to qualify such devices. Thus total dose testing of these parts is no longer an appropriately conservative measure to be used for hardness assurance. We also note that the functionality of micromechanical Si-based devices may be altered due to the radiation-induced deposition of charge in the oxide passivation layers.

Barnes, C.↗
NASA NTRS2001

Predictions of secondary neutrons and their importance to radiation effects inside the International Space Station

As part of a study funded by NASA MSFC to assess thecontribution of secondary particles in producing radiation damage to optoelectronics devices located on the International Space Station (IS), Monte Carlo calculations have been made to predict secondary spectra vs. shielding inside ISS modules and in electronics boxes attached on the truss (Armstrong and Colborn, 1998). The calculations take into account secondary neutron, proton, and charged pion production from the ambient galactic cosmic-ray (GCR) proton, trapped proton, and neutron albedo environments. Comparisons of the predicted neutron spectra with measurments made on the Mir space station and other spacecraft have also been made (Armstrong and Colborn, 1998). In this paper, some initial results from folding the predicted neutron spectrum inside ISS modules from Armstrong and Colborn (1998) with several types of radiation effects response functions related to electronics damage and astronaut-dose are given. These results provide an estimate of the practical importance of neutrons compared to protons in assessing radiation effects for the ISS. Also, the important neutron energy ranges for producing these effects have been estimated, which provides guidance for onboard neutron measurement requirements.

Neutrons↗
NASA NTRS2004

The Near-Earth Space Radiation for Electronics Environment

The earth's space radiation environment is described in terms of: a) charged particles as relevant to effects on spacecraft electronics, b) the nature and distribution of trapped and transiting radiation, and c) their effect on electronic components.

Stassinopoulos, E. G.↗
NASA NTRS1980

Effect of blackbody radiation on the threshold for two-electron photodetachment of H/-/

The threshold law of the titled process, which is of the same form as that for electron-impact ionization of H, can experimentally be contaminated by simultaneous single photodetachment and Rydberg excitation of the residual atom, followed by ionization of the Rydberg atom by (room-temperature) blackbody photons. This gives a signal indistinguishable from direct double photodetachment. The correction is here calculated and shown to be finite at the double photodetachment threshold, and to have, possibly, an implication about the form of the threshold law itself. However, at room temperature its contribution is found to be small as it pertains to a recently initiated experiment at the Los Alamos Meson Physics Facility for available energies greater than a millivolt above threshold. The temperature dependence of the correction is shown to be large (k/B/T) to the 7/2; thus at higher temperatures the effect may be observable.

Temkin, A.↗