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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Behavior of ion-implanted junction diodes in 3C SiC

p-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kohm. The current-voltage characteristics were measured between room temperature and 270 C. The extracted ideality factors increase with temperature.

Avila, R. E.↗
NASA NTRS1990

Ensemble Monte Carlo characterization of graded Al(x)Ga(1-x)As heterojunction barriers

The current-voltage characteristics of graded Al(x)Ga(1-x)As heterojunction barriers were investigated using a self-consistent ensemble Monte Carlo method. Results are presented for barriers with two doping levels (10 to the 15th/cu cm and 10 to the 17th/cu cm) and two barrier heights (100 and 265 meV). It was found that the lower barrier structure exhibited little rectification at room temperature at both doping levels, while the higher barrier exhibited considerable rectification. The structures with the lower doping value exhibited a smaller current in both forward and reverse regions, due to space-charge effect. The results of studies of the energy and momentum distribution functions along the barrier indicate that the assumption of drifted Maxwellian distribution used in energy-momentum models is not justified for Gamma valley electrons.

Kamoua, R.↗
NASA NTRS2004

Simulation and Analysis of Three-Phase Rectifiers for Aerospace Power Applications

Due to the nature of planned planetary missions, fairly large advanced power systems are required for the spacecraft. These future high power spacecrafts are expected to use dynamic power conversion systems incorporating high speed alternators as three-phase AC electrical power source. One of the early design considerations in such systems is the type of rectification to be used with the AC source for DC user loads. This paper address the issues involved with two different rectification methods, namely the conventional six and twelve pulses. Two circuit configurations which involved parallel combinations of the six and twelve-pulse rectifiers were selected for the simulation. The rectifier s input and output power waveforms will be thoroughly examined through simulations. The effects of the parasitic load for power balancing and filter components for reducing the ripple voltage at the DC loads are also included in the analysis. Details of the simulation circuits, simulation results, and design examples for reducing risk from damaging of spacecraft engines will be presented and discussed.

Truong, Long V.↗
DOE OSTI2014

Predictions of VRF on a Langmuir Probe under the RF Heating Spiral on the Divertor Floor on NSTX-U

RF heating deposition spirals are observed on the divertor plates on NSTX as shown in for a NB plus RF heating case. It has been shown that the RF spiral is tracked quite well by the spiral mapping of the strike points on the divertor plate of magnetic field lines passing in front of the high harmonic fast wave (HHFW) antenna on NSTX. Indeed, both current instrumented tiles and Langmuir probes respond to the spiral when it is positioned over them. In particular, a positive increment in tile current (collection of electrons) is obtained when the spiral is over the tile. This current can be due to RF rectification and/or RF heating of the scrape off layer (SOL) plasma along the magnetic field lines passing in front of the the HHFW antenna. It is important to determine quantitatively the relative contributions of these processes. Here we explore the properties of the characteristics of probes on the lower divertor plate to determine the likelyhood that the primary cause of the RF heat deposition is RF rectification.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Single-contact tunneling thermometry

A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

42 ENGINEERING↗
DOE OSTI2017

Nanoporous Hybrid Electrolytes for High-Energy Batteries Based on Reactive Metal Anodes

Successful strategies for stabilizing electrodeposition of reactive metals, including lithium, sodium, and aluminum are a requirement for safe, high-energy electrochemical storage technologies that utilize these metals as anodes. Unstable deposition produces high-surface area dendritic structures at the anode/electrolyte interface, which causes premature cell failure by complex physical and chemical processes that have presented formidable barriers to progress. In this work, it is reported that hybrid electrolytes created by infusing conventional liquid electrolytes into nanoporous membranes provide exceptional ability to stabilize Li. Electrochemical cells based on γ-Al 2 O 3 ceramics with pore diameters below a cut-off value above 200 nm exhibit long-term stability even at a current density of 3 mA cm -2 . The effect is not limited to ceramics; similar large enhancements in stability are observed for polypropylene membranes with less monodisperse pores below 450 nm. These results are critically assessed using theories for ion rectification and electrodeposition reactions in porous solids and show that the source of stable electrodeposition in nanoporous electrolytes is fundamental.

25 ENERGY STORAGE↗
DOE OSTI2024

Control-inspired design and power optimization of an active mechanical motion rectifier based power takeoff for wave energy converters

Ocean waves have high energy density and are persistent and predictable. Yet, converting wave energy to a useable form remains challenging. A significant hurdle is the oscillatory nature of waves resulting in the alternating loads, which necessitate the use of rectification at some stage of the energy conversion. This research effort presents a novel design of active mechanical motion rectifier (AMMR) for the power takeoff (PTO), which provides enhanced controllability and better power performance when compared to passive mechanical motion rectifiers (MMR). Inspired by transistors used in synchronous electrical rectifiers, the proposed design uses controllable electromagnetic clutches in the mechanical transmission to allow active engagement-disengagement control; thus, rectifying the oscillatory motion into a unidirectional rotation for high energy conversion efficiency and allowing the generator in unidirectional rotation to control the bidirectional wave capture structure for maximizing the power output. A semi-analytical computational approach is developed to efficiently evaluate the optimal power achieved using the proposed AMMR-based PTO and active control. It is found that the AMMR-based PTO design yields a higher optimal power than the previous passive MMR design across the wave spectrum. The influences of generator inertia and reactive power are discussed. Furthermore, the effects of control parameters on the power output and the optimal trajectories are analyzed. Wave tank tests with the AMMR prototype demonstrated the effectiveness of AMMR based PTO design and validated the numerical analysis.

16 TIDAL AND WAVE POWER↗
DOE OSTI2025

Light-Matter Interaction in Ultrastable Tunneling Nanogaps

Light emission and detection through tunnel junctions have emerged as a promising platform for studying nanoscale light–matter interactions, including electroluminescence and photoassisted transport. However, controlling these interactions in the tunneling regime has been challenging due to complex underlying mechanisms that remain poorly understood. A major obstacle is the difficulty in forming stable junctions that can function reliably over extended periods. In this study, we fabricate ultrastable tunneling junctions consisting of epitaxial indium–tin-oxide, epitaxial lutetium oxide, and gold. With their stable and consistent tunneling currents, we investigate photon-assisted transport phenomena using simple direct-current detection. Our results demonstrate that optical rectification is the primary contributor to the laser-induced current, alongside thermal effects and hot-electron currents. Furthermore, owing to their epitaxial nature and high breakdown threshold, this ultrastable platform holds promise for future real-world applications, including nanoscale light sources and multifunctional photodetectors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Physics-based parametrization of the surface impedance for radio frequency sheaths

The properties of sheaths near conducting surfaces are studied for the case where both magnetized plasma and intense radio frequency (rf) waves coexist. The work is motivated primarily by the need to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, and is expected to be useful in modeling rf sheath interactions in global ICRF codes. Here, employing a previously developed model for oblique angle magnetized rf sheaths [J. R. Myra and D. A. D’Ippolito, Phys. Plasmas 22, 062507 (2015)], an investigation of the four-dimensional parameter space governing these sheath is carried out. By combining numerical and analytical results, a parametrization of the surface impedance and voltage rectification for rf sheaths in the entire four-dimensional space is obtained.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Electrical Validation Testing for ORPC MHK Generator, Modification 6: ORPC SBV for MHK Generator System (CRADA Final Report)

For the U.S. Department of Energy’s (DOE) 2016 Small Business Voucher for Marine and Hydrokinetic (MHK) System, Second Round 2016, ORPC intends to work with the National Renewable Energy Laboratory (NREL) to perform dynamometer testing of the MHK generator systems and its associated controls and inverters. ORPC will provide the generator, variable frequency drives (VFD), controls, and inverter for this testing. NREL will utilize the NREL Energy Systems Integration Facility (ESIF) and dynamometer facilities at the National Wind Technology Center (NWTC) for this work. Modification 6: Additionally, NREL will conduct a feasibility study for implementing passive DC rectification at the turbine.

17 WIND ENERGY↗
NASA NTRS1994

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

EPITAXIAL LAYER↗
DOE OSTI2018

Stable Silicene in Graphene/Silicene Van der Waals Heterostructures

Silicene-based van der Waals heterostructures are theoretically predicted to have interesting physical properties, but their experimental fabrication has remained a challenge because of the easy oxidation of silicene in air. Here, the fabrication of graphene/silicene van der Waals heterostructures by silicon intercalation is reported. Density functional theory calculations show weak interactions between graphene and silicene layers, confirming the formation of van der Waals heterostructures. The heterostructures show no observable damage after air exposure for extended periods, indicating good air stability. The I–V characteristics of the vertical graphene/silicene/Ru heterostructures show rectification behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets

Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo-phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p-Si/V-doped-ferroelectric-ZnO 2D nanosheets (FESZ-PD) is fabricated, and the ferroelectricity-enhanced piezo-phototronic effect on the photoresponse behavior of the FESZ-PD is carefully investigated. By introducing the ferroelectricity and the piezo-phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo-phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain-free conditions, the photoresponsivity R of the FESZ-PD increases by 2.4 times when applying a -0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo-phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high-performance electronic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Evidence of hot carrier extraction in metal halide perovskite solar cells

The presence of hot carriers is presented in the operational properties of an (FA,Cs)Pb(I, Br, Cl) 3 solar cell at ambient temperatures and under practical solar concentration. Albeit, in a device architecture that is not suitably designed as a functional hot carrier solar cell. At 100 K, clear evidence of hot carriers is observed in both the high energy tail of the photoluminescence spectra and from the appearance of a nonequilibrium photocurrent at higher fluence in light J–V measurements. At room temperature, however, the presence of hot carriers in the emission at elevated laser fluence is shown to compete with a gradual red shift in the PL peak energy as photoinduced halide segregation begins to occur at higher lattice temperature. The effects of thermionic emission of hot carriers and the presence of a nonequilibrium carrier distribution are also shown to be distinct from simple lattice heating. In conclusion, this results in large unsaturated photocurrents at high powers as the Fermi distribution exceeds that of the heterointerface controlling carrier transport and rectification.

14 SOLAR ENERGY↗
DOE OSTI2019

Effect of electron–electron interactions on optical properties of GaN/AlN quantum wells: a nonlinear Schrödinger equation approach

Researchers usually neglect the electron–electron interaction effect when they study the optical properties of semiconducting nanostructures through the compact density matrix approach. In the existing papers, this work has also been done through self-consistent solution of the Schrödinger and Poisson equations. For the first time, we have investigated the electronic and optical properties of wurtzite GaN/AlN quantum wells in the presence of electron–electron interactions assuming weak electron–electron scattering through a numerical solution of a nonlinear Schrödinger equation. It is shown that the electron–electron interaction effect leads to the removal of the N-fold degeneracy in the energy levels of N-well multiple quantum well systems. Effects of different parameters such as electric field, the strength of the electron–electron interaction, a total length of the system and also two different numbers of wells (1 and 2) on the mentioned optical properties have been investigated. Also, we observed redshifts in the optical rectification coefficient peak positions when the nonlinear parameter increased. Finite difference self-consistent method was employed to solve the nonlinear Schrödinger equation and we demonstrated the method convergence. Finally, we illustrated the accuracy of the method by comparing our energy values with those of the Sinc method.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗