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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Study of the Hydrogen Pretreatment of Gallium and Platinum Promoted ZSM-5 for the Ethane Dehydroaromatization Reaction

Here, the performances of gallium and platinum promoted ZSM-5 catalysts, fresh and reduced, were studied for the dehydroaromatization of ethane to aromatics. Fresh and reduced 2% Ga/ZSM-5, 1.5% Ga–0.5% Pt/ZSM-5, and 0.5% Pt/ZSM-5 were tested in a fixed-bed reactor system at 615 °C for 2 h time on stream. It was observed that the hydrogen reduction of the fresh Pt-containing catalysts led to an increase in catalytic conversion. The addition of platinum to the gallium catalyst resulted in an increase in the reducibility of the Ga species on the surface of the zeolite. The GaPt catalysts exhibited an increase in ethane conversion and the stability of aromatic production selectivity over the Ga and Pt catalysts. The as-prepared fresh catalysts were characterized by ICP and BET methods. The fresh and reduced catalysts were further analyzed by XRD, H 2 -TPR, XPS, pyridine DRIFTS, TGA, and TEM.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Production of itaconic acid from alkali pretreated lignin by dynamic two stage bioconversion

Abstract Expanding the portfolio of products that can be made from lignin will be critical to enabling a viable bio-based economy. Here, we engineer Pseudomonas putida for high-yield production of the tricarboxylic acid cycle-derived building block chemical, itaconic acid, from model aromatic compounds and aromatics derived from lignin. We develop a nitrogen starvation-detecting biosensor for dynamic two-stage bioproduction in which itaconic acid is produced during a non-growth associated production phase. Through the use of two distinct itaconic acid production pathways, the tuning of TCA cycle gene expression, deletion of competing pathways, and dynamic regulation, we achieve an overall maximum yield of 56% (mol/mol) and titer of 1.3 g/L from p -coumarate, and 1.4 g/L titer from monomeric aromatic compounds produced from alkali-treated lignin. This work illustrates a proof-of-principle that using dynamic metabolic control to reroute carbon after it enters central metabolism enables production of valuable chemicals from lignin at high yields by relieving the burden of constitutively expressing toxic heterologous pathways.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗