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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Thermoelectric refrigeration for temperatures below 100 K: A study of titanium sesquioxide

Previous measurements of the specific heat of V-doped Ti2O3 at low temperatures were explained by a model which also suggested the material would have a high thermoelectric figure-of-merit. The sample preparation, experimental apparatus, and the results of measurements on the thermal conductivity, thermoelectric power, and electrical resistivity of a single crystal Ti2O3 - 4% V sample are described. The results are used to derive the thermoelectric figure-of-merit between 5 and 300 K. The figure-of-merit is much smaller than expected and of little practical value because of the very high phonon thermal conductivity.

Redebaugh, R.↗
NASA NTRS1981

Electrical conductivity and electron-spin resonance in oxidatively stabilized polyacrylonitrile subjected to elevated temperature

Electrical conductivity and electron spin resonance measurements are presented for oxidatively stabilized polyacrylonitrile (PAN) fibers subjected to heat treatment at temperatures ranging from 700 to 950 K. Conductivity measurements made at temperatures between 77 and 523 K reveal that PAN fibers heat treated in vacuum behave as semiconductors, with a room-temperature conductivity dominated by the contributions of impurity states, with an activation energy of 88 kcal/mole. A decrease in conductivity is observed upon air which is attributed to a decrease in the electron-phonon scattering time. ESR spectra indicate that conducting pathways having metallic properties are formed at temperatures as low as 715 K, although the contribution of these pathways to the room-temperature conductivity is extremely small next to the contribution of localized spin centers.

Lerner, N. R.↗
NASA NTRS1981

Raman study of the improper ferroelectric phase transition in iron iodine boracite

The reduction in the dielectric anomaly near the phase transition temperature in improper ferroelectrics suggests that this behavior may be exploited to significantly enhance the figure-of-merit for pyroelectric infrared detection. This reduction is associated with a decoupling of the thermal and dielectric responses which, in turn, reflects the unusual nature of the lattice instability at the phase transition. In order to elucidate the characteristics of the phonon behavior connected with the lattice instability, Raman scattering of Fe3B7O13I has been examined in both the paraelectric and ferroelectric phases. The results of this study as well as results from earlier measurements on other boracites, provides insight into the nature of the mode softening.

Kim, Q.↗
NASA NTRS1982

Electrical characterization of Hg(1-x)Cd(x)Te alloys

Theoretical models are described for calculations of charge-carrier concentrations, Fermi energy, and conduction electron mobility as functions of x, temperature, and ionized and neutral defect concentrations of Hg(1-x)Cd(x)Te alloys. Measurements are reported of electron concentration and electron mobility from 5-300 K for alloys with x values of between 0.17 and 0.30. The electrical data are in reasonable agreement with theory, and were analyzed to obtain estimates of donor and acceptor state concentrations. The electron mobilities are calculated in terms of a microscopic theory of electrical conduction derived from the solution of the Boltzmann equation for the perturbed steady-state electron distribution function, and they show that longitudinal optical-phonon and charged and neutral defect scattering are the dominant mobility-limiting mechanisms.

Lehoczky, S. L.↗
NASA NTRS1984

Nonequilibrium noise of InSb hot electron bolometers

Noise spectra of a InSb hot electron bolometer at 4.2 K bath temperature are measured and compared with theory. Bolometer phonon noise and Johnson noise are included in the analysis. A nonequilibrium Johnson noise model, due to Mather, gives good agreement with experiment over the frequency range 0.2-1.1 MHz. This model incorporates an elevated electron gas temperature and electrothermal feedback from the bias supply.

Brown, E.↗
NASA NTRS1985

Special topics in infrared interferometry

Topics in IR interferometry related to the development of a Michelson interferometer are treated. The selection and reading of the signal from the detector to the analog to digital converter is explained. The requirements for the Michelson interferometer advance speed are deduced. The effects of intensity modulation on the interferogram are discussed. Wavelength and intensity calibration of the interferometer are explained. Noise sources (Nyquist or Johnson noise, phonon noise), definitions of measuring methods of noise, and noise measurements are presented.

Hanel, R. A.↗
NASA NTRS1984

Lunar luminescence and the filling-in of Fraunhofer lines in moonlight

The filling-in of Fraunhofer lines in moonlight has been attributed to lunar luminescence. In order to test mechanisms proposed for this effect, measurements were made of the filling-in of the H-alpha line, the Na D doublet, and a number of lines near the doublet. The degree of filling-in was not correlated with wavelength in a way expected from a broadband luminescence, such as thermoluminescence. However, it was correlated with equivalent width of the Fraunhofer line, such that it increased as equivalent width decreased. This suggests that the Fraunhofer line filling at the moon's surface is caused by inelastic scattering of sunlight with a small wavelength shift, as for example, photon-phonon scattering.

Potter, A. E.↗
NASA NTRS1983

Prediction of structures and magnetic orientations in solid alpha and beta-O2

A quasi-harmonic-lattice-dynamics method coupled with a pattern-recognition optimization scheme is used to determine the minimum energy structures and magnetic orientations of solid oxygen. It is shown that the magnetic interaction is responsible for the stability of alpha-O2 with respect to beta-O2 at zero temperature and pressure. The calculated alpha-O2 lattice parameters, magnetic orientations, and sublimation energy are in good agreement with experiment. Phonon dispersion curves are calculated at vector k not equal to zero and the acoustic sound velocities are determined. The rms translational and orientational fluctuations from equilibrium are also calculated. The beta-O2 phase is described by constraining the magnetic moments so that the magnetic Hamiltonian preserves the hexagonal symmetry of the crystal. The calculated lattice parameters are in good agreement with the experiments, and a three-sublattice, quasi-helical magnetic orientation is predicted from structural and energetic considerations.

Etters, R. D.↗
NASA NTRS1984

High-temperature thermoelectric energy converstion. I - Theory

The high-temperature thermoelectric energy-conversion theory is examined. It is shown that semiconductors are the logical choices for high-figure of merit-value materials, but the requirements for optimization differ depending on whether the material is classed as a broad-band or narrow-band semiconductor. Optimization is discussed as a function of temperature. Phonon scattering mechanisms are considered; and for the reduction of thermal conductivity, basic material guidelines are given. Although experimental results indicate that ZT (where Z is the figure of merit and T is the temperature) of about 1 represents an upper limit, there is in fact, no theoretical limitation. It is unlikely that the Z values will be significantly reduced by radiation transfer at temperatures lower than 2000 K. The current status of materials research is also considered. The rare-earth chalcogenides which behave as n-type semi-conductors and the boron-rich borides which exhibit hopping p-type conductivity behavior are the materials that show promise for high-temperature Z values. The reasons for low thermal conductivities in these materials is discussed.

Wood, C.↗
NASA NTRS1985

Physics and design of advanced IR bolometers and photoconductors

The state-of-the-art in photoconductors and bolometers is reviewed, centering on the materials development and concepts of extrinsic Si and Ge devices. It is suggested that in the field of 2-D detector arrays the hybrid circuits containing a photoconductor or a photodiode array, bonded with In solder to a switched MOS readout device with up to 60 x 60 elements, will produce superior performance. Other systems discussed include charge-coupled devices, developed for visible-light imaging and adapted to IR imaging, and charge-injection devices, a monolithic combination of a standard photoconductor and a metal-insulator-semiconductor capacitor. Finally, it is pointed out that a nonequilibrium theory of bolometer noise demonstrates the possibility of reducing the traditionally accepted noise limits by 60 percent for Johnson noise and 30 percent for the noise from phonons in the thermal link of the bolometer.

Haller, E. E.↗
NASA NTRS1985

Role of long-wavelength degrees of freedom in the rod-to-coil transition in polymers

An analytical model is fitted to experimental data to show that rod-to-coil (RTC) transformations in single strand polymers (SSPs) are close to true phase transitions. The RTC are known to occur when the temperature or pH of a solvent in which the SSP is immersed is varied abruptly. Long wavelength degrees of freedom in the SSPs induce long range interactions in the molecule which lead to a first order phase transition. The Landau formalism suggests that a long-range ordered state can appear at a low temperature. A microscopic model of the phonon degrees of freedom identifies the nonzero temperature threshold at which the phase transition will occur. The phenomenology described is similar to a previous model for transitions in double-strand polymers.

Goldenfeld, N.↗
NASA NTRS1984

Electron mobility in modulation-doped heterostructures

A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

Walukiewicz, W.↗
NASA NTRS1986

Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels

A high-resolution optical study was carried out on GaAs crystals grown by horizontal Bridgman and liquid-encapsulated-Czochralski methods. An excellent correlation was found between the intensity of the 1.039-eV no-phonon line and the characteristic absorption of EL2, the major deep donor level in GaAs. A correlation was also found between the characteristic optical absorption of EL2 and its concentration as determined by junction capacitance measurements. The presence of EL0, another midgap level contained in heavily oxygen-doped crystals at concentration always less than those of EL2, had no effect on the optical spectra, but altered the capacitance measurements. Accordingly, an accurate calibration for the determination of EL2 by optical absorption was obtained from capacitance measurements on crystals containing only EL2; in this way the uncertainties introduced by other midgap levels were eliminated.

Skowronski, M.↗
NASA NTRS1985

Absorption and fluorescence of alexandrite and of titanium in sapphire and glass

The fluorescence and absorption data for titanium in crystalline sapphire and titanium doped into two silicate and one phosphate glass structures are analyzed. It is observed that the Ti-doped silicate glass sample exhibits no absorption related to the Ti(III) ion, the Ti-doped phosphate glass is deep blue, the absorption line width of the glass samples are a factor of two larger than that of sapphire, and the absorption peak for the Ti in the glass shifted about 100 nm to the red from the Ti:sapphire absorption peak. This shift reveals that the Ti(III) ion is sensitive to the crystalline environment and not to the glass environment. The photoluminescence spectra for Ti-doped sapphire and alexandrite are compared. It is detected that the Ti:sapphire exhibits a broader spectrum than that for alexandrite with a peak at 750 nm. The three zero phonon transitions of Ti:Al2O3 at liquid nitrogen temperatures are studied.

Byvik, C. E.↗
NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Summers, C. J.↗
NASA NTRS1985

Metastability of the midgap level EL 2 in GaAs - Relationship with the As antisite defect

It is found that the rate of the photoinduced transition of the GaAs midgap level EL 2 to its metastable state increases as its occupation increases. High-resolution optical spectra of this transition exhibit a sharp peak very similar to the no-phonon line of the intracenter absorption of the As antisite defect. These findings show that the transition to the metastable state is initiated from the ground state 1A1, and it is finalized via the excited state 1T2 of the neutral As antisite defect. They thus provide a new basis for the critical assessment of the EL 2 metastability models and further confirmation of the association of EL 2 with the isolated As antisite defect.

Skowronski, M.↗
NASA NTRS1987

The variably spaced superlattice electroluminescent display - A new high efficiency electroluminescence scheme

A new, highly efficient dc electroluminescent display is presented. A variably spaced superlattice scheme is suggested herein which can produce high-energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias an order of magnitude less than the best dc electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer stack under bias and emerge into the active layer at an energy equal to the conduction-band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Brennan, K. F.↗